Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2001
04/04/2001EP1089341A2 Non-volatile memory
04/04/2001EP1089339A2 Ferroelectric capacitor and ferrroelectric memory
04/04/2001EP1089288A1 Memory controller and method for optional access to SRAM or DRAM
04/04/2001EP1089286A1 Clock suspending circuitry
04/04/2001EP1088310A2 Radiation hardened six transistor random access memory and memory device
04/04/2001EP1088309A1 Writing and reading method for ferroelectric memory
04/04/2001EP0902924B1 Redundancy memory circuit with rom storage cells
04/04/2001CN1064132C Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
04/03/2001US6212648 Memory module having random access memories with defective addresses
04/03/2001US6212615 Semiconductor circuit having burst counter circuit which is reduced the circuits passing from the clock input terminal to output terminal
04/03/2001US6212482 Circuit and method for specifying performance parameters in integrated circuits
04/03/2001US6212127 Semiconductor device and timing control circuit
04/03/2001US6212126 Semiconductor device including clock generation circuit capable of generating internal clock stably
04/03/2001US6212125 Asynchronous semiconductor memory device with a control circuit that controls the latch timing of an input signal
04/03/2001US6212124 Static RAM having word line driving circuitry shared by all the memory cells provided therein
04/03/2001US6212121 Semiconductor memory device with multiple sub-arrays of different sizes
04/03/2001US6212120 Semiconductor memory device with less power consumption
04/03/2001US6212118 Semiconductor memory
04/03/2001US6212117 Duplicate bitline self-time technique for reliable memory operation
04/03/2001US6212116 Semiconductor memory device
04/03/2001US6212113 Semiconductor memory device input circuit
04/03/2001US6212110 Semiconductor memory device
04/03/2001US6212109 Dynamic memory array having write data applied to selected bit line sense amplifiers before sensing to write associated selected memory cells
04/03/2001US6212108 Distributed voltage charge circuits to reduce sensing time in a memory device
04/03/2001US6212107 Charge pump circuit and a step-up circuit provided with same
04/03/2001US6212100 Nonvolatile memory cell and method for programming and/or verifying the same
04/03/2001US6212094 Low power SRAM memory cell having a single bit line
04/03/2001US6212093 High-density non-volatile memory devices incorporating sandwich coordination compounds
04/03/2001US6212092 Semiconductor integrated circuit
04/03/2001US6212090 Semiconductor device including a repetitive pattern
04/03/2001US6212089 Semiconductor memory device and defect remedying method thereof
04/03/2001US6211707 Output buffer circuit with preset function
04/03/2001US6211704 Asynchronous sensing differential logic (ASDL) circuit
04/03/2001US6211692 Method and apparatus for determining the robustness and incident angle sensitivity of memory cells to alpha-particle/cosmic ray induced soft errors
04/03/2001US6211531 Controllable conduction device
04/03/2001US6211456 Method and apparatus for routing 1 of 4 signals
04/03/2001US6211004 Semiconductor integrated circuit device and process for manufacturing the same
04/03/2001CA2170087C High-density read-only memory
03/2001
03/29/2001WO2001022423A1 Memory devices
03/29/2001WO2000052699A8 Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory
03/29/2001DE19944738A1 Segmented word line architecture
03/29/2001DE19944248A1 Inputbuffer einer integrierten Halbleiterschaltung Input buffer of a semiconductor integrated circuit
03/29/2001DE10043650A1 Internal clock generation circuit for SDRAM, has delay circuits to delay internal signals based on delay control time set according to phase difference between one of the internal signals and output of delay circuit
03/28/2001EP1087405A1 Semiconductor memory device capable of generating offset voltage independent of bit line voltage
03/28/2001EP1087403A1 Ferroelectric memory device
03/28/2001EP1086465A1 Method and apparatus for a serial access memory
03/28/2001EP0925548B1 Data transfer method for a radio frequency identification system
03/28/2001CN1289126A Semiconductor apparatus
03/27/2001US6209113 Method and apparatus for performing error correction on data read from a multistate memory
03/27/2001US6209056 Semiconductor memory device having a plurality of bank sections distributed in a plurality of divided memory cell arrays
03/27/2001US6208583 Synchronous semiconductor memory having an improved reading margin and an improved timing control in a test mode
03/27/2001US6208582 Memory device including a double-rate input/output circuit
03/27/2001US6208581 Hybrid memory device and method for controlling same
03/27/2001US6208580 Semiconductor storage device including column pre-decoder circuit for preventing multiple selection of bit lines
03/27/2001US6208577 Circuit and method for refreshing data stored in a memory cell
03/27/2001US6208576 Synchronous semiconductor memory device
03/27/2001US6208575 Dynamic memory array bit line sense amplifier enabled to drive toward, but stopped before substantially reaching, a source of voltage
03/27/2001US6208574 Sense amplifier with local column read amplifier and local data write drivers
03/27/2001US6208573 Semiconductor memory device
03/27/2001US6208566 Semiconductor integrated circuit
03/27/2001US6208563 Semiconductor memory device which continuously performs read/write operations with short access time
03/27/2001US6208560 Nonvolatile semiconductor memory device
03/27/2001US6208555 Negative resistance memory cell and method
03/27/2001US6208554 Single event upset (SEU) hardened static random access memory cell
03/27/2001US6208553 High density non-volatile memory device incorporating thiol-derivatized porphyrins
03/27/2001US6208551 Memory circuit architecture
03/27/2001US6208550 Ferroelectric memory device and method for operating thereof
03/27/2001US6208547 Memory circuit/logic circuit integrated device capable of reducing term of works
03/27/2001US6208545 Three dimensional structure memory
03/27/2001US6208542 Techniques for storing digital data in an analog or multilevel memory
03/27/2001US6208170 Semiconductor integrated circuit having a sleep mode with low power and small area
03/27/2001US6208168 Output driver circuits having programmable pull-up and pull-down capability for driving variable loads
03/27/2001US6207998 Semiconductor device with well of different conductivity types
03/27/2001US6207507 Multi-level flash memory using triple well process and method of making
03/22/2001WO2001020610A1 Architecture, method(s) and circuitry for low power memories
03/22/2001WO2001020454A1 Memory redundancy techniques
03/22/2001WO2001020356A1 Magnetoresistive sensor or memory elements with decreased magnetic switch field
03/22/2001WO2001008161A3 A method and a device for testing a memory array in which fault response is compresed
03/22/2001DE19944036A1 Integrierter Speicher mit wenigstens zwei Plattensegmenten Integrated memory having at least two plate segments
03/22/2001DE10042388A1 Ferroelectric random-access memory has equalising device for equalising adjacent bit lines, pre-loading setting device for bit line pre-loading level and reference level generation device for read amplifier
03/22/2001DE10031433A1 Memory Device with Packet Command Memory device with Packet Command
03/22/2001DE10018988A1 Pipeline device for SDRAM, includes register which supply data to corresponding data path in response to control signal output by control signal generation circuit
03/22/2001CA2384862A1 Architecture, method(s) and circuitry for low power memories
03/21/2001EP1085586A2 Magnetoresistive element and magnetic memory device
03/21/2001EP1085523A1 Integrated memory with memory cells and reference cells
03/21/2001EP1085519A1 Semiconductor integrated device
03/21/2001EP1085517A2 Integrated memory circuit with at least two plate segments
03/21/2001CN1288290A Input buffer for semiconductor integrated circuit
03/21/2001CN1288262A Method and device for replacing non-working metallic wire for dynamic random access memory
03/21/2001CN1288237A Integrated storage unit having at least two slice frayments
03/21/2001CN1288236A Integrated storage unit having storage cells and reference unit
03/20/2001US6205514 Synchronous SRAM having global write enable
03/20/2001US6205086 Phase control circuit, semiconductor device and semiconductor memory
03/20/2001US6205085 Method and circuit for sending a signal in a semiconductor device during a setup time
03/20/2001US6205082 LSI device with memory and logics mounted thereon
03/20/2001US6205081 Address generating circuit of semiconductor memory device
03/20/2001US6205080 Column decode circuits and apparatus
03/20/2001US6205079 Semiconductor integrated circuit having power-supply circuits for producing internal supply voltages
03/20/2001US6205076 Destructive read type memory circuit, restoring circuit for the same and sense amplifier
03/20/2001US6205073 Current conveyor and method for readout of MTJ memories