Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2002
11/28/2002US20020176272 Select line architecture for magnetic random access memories
11/28/2002US20020175773 Circuit for preventing system malfunction in semiconductor memory and method thereof
11/28/2002US20020175746 Semiconductor integrated circuit device
11/28/2002US20020175744 Semiconductor integrated circuit device including a negative power supply circuit
11/28/2002US20020175718 Semiconductor integrated circuit device
11/28/2002US20020175701 Signal transmitting device suited to fast signal transmission
11/28/2002US20020175386 Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
11/28/2002US20020175360 Memory module having a memory cell and method for fabricating the memory module
11/28/2002US20020175357 Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
11/28/2002US20020175354 Semiconductor device
11/28/2002DE10220897A1 Thin film magnetic memory device e.g. magnetic RAM disconnects data line of selected memory cell from power supply voltage and connects source line to ground voltage during data read operation
11/28/2002DE10161128A1 Mit einem Taktsignal synchron arbeitende Halbleiterspeichervorrichtung With a clock signal synchronously operating the semiconductor memory device
11/28/2002DE10124366A1 Production of a semiconductor memory cell has spacer elements formed by depositing a material region for a first passivating region and subsequently polishing with a stop on a common level of storage elements or a protective layer
11/28/2002DE10123593A1 Magnetic memory arrangement has second supply device that sets current direction according to information to be written, first current supply device that changes current direction
11/28/2002DE10123332A1 Thin film magnetic memory device e.g. MRAM enables adjacent magnetic memory cells to share mutual write word lines that are selectively activated based on row selection result
11/27/2002EP1261127A2 Semiconductor integrated circuit device
11/27/2002EP1260988A2 Resistive cross point memory device with calibration controller for a sense amplifier
11/27/2002EP1260899A2 Circuit and method for generating a delayed internal clock signal
11/27/2002EP1259963A1 Memory device with support for unaligned access
11/27/2002EP1103050B1 Resistive ferroelectric storage cell
11/27/2002EP0870241B1 Protocol for communication with dynamic memory
11/27/2002CN1381897A Ferroelectronics/semiconductor memory structure based on AIxGa1-xN/GaN heterojunction and its making method
11/27/2002CN1381847A 半导体存储器装置 The semiconductor memory device
11/26/2002US6487629 Semiconductor memory for operation in a plurality of operational modes
11/26/2002US6487212 Queuing structure and method for prioritization of frames in a network switch
11/26/2002US6487142 Synchronous dynamic random access memory
11/26/2002US6487138 Semiconductor memory
11/26/2002US6487136 Semiconductor memory device with reduced current consumption in data hold mode
11/26/2002US6487135 Semiconductor device
11/26/2002US6487133 Semiconductor device
11/26/2002US6487132 Integrated circuit memory devices having multiple input/output buses and precharge circuitry for precharging the input/output buses between write operations
11/26/2002US6487130 Semiconductor integrated circuit device
11/26/2002US6487128 Integrated memory having memory cells and reference cells, and operating method for such a memory
11/26/2002US6487127 Circuit configuration for reading and writing information at a memory cell field
11/26/2002US6487122 Multi-value semiconductor memory device with write verify circuit
11/26/2002US6487121 Method of programming a non-volatile memory cell using a vertical electric field
11/26/2002US6487119 Non-volatile read only memory and its manufacturing method
11/26/2002US6487116 Precision programming of nonvolatile memory cells
11/26/2002US6487113 Programming a phase-change memory with slow quench time
11/26/2002US6487111 Magneto-resistive memory having sense amplifier with offset control
11/26/2002US6487110 Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
11/26/2002US6487109 Magnetoresistive memory and method for reading a magnetoresistive memory
11/26/2002US6487108 MRAM configuration
11/26/2002US6487107 Retention time of memory cells by reducing leakage current
11/26/2002US6487106 Programmable microelectronic devices and method of forming and programming same
11/26/2002US6487104 Semiconductor memory device
11/26/2002US6487103 Data read-out circuit, data read-out method, and data storage device
11/26/2002US6487086 Circuit module
11/26/2002US6486885 Memory device and method
11/26/2002US6486731 Semiconductor integrated circuit device capable of externally monitoring internal voltage
11/26/2002US6486729 Potential detector and semiconductor integrated circuit
11/26/2002US6486722 Semiconductor device including a control signal generation circuit allowing reduction in size
11/26/2002US6486719 Flip-flop circuits having digital-to-time conversion latches therein
11/26/2002US6486651 Integrated circuit devices having a delay locked loop that is configurable for high-frequency operation during test and methods of operating same
11/26/2002US6486493 Semiconductor integrated circuit device having hierarchical test interface circuit
11/26/2002US6486007 Method of fabricating a memory cell for a static random access memory
11/26/2002US6485123 Shutter ink jet
11/21/2002WO2002093582A1 Propagation delay independent sdram data capture device and method
11/21/2002WO2002093581A2 Magnetic memory arrangement
11/21/2002WO2002093580A1 Method and apparatus for asynchronously controlling a dram array in an sram environment
11/21/2002US20020174397 Method for error detection/correction of multilevel cell memory and multilevel cell memory having error detection/correction function
11/21/2002US20020174311 Method and apparatus for coordinating memory operations among diversely-located memory components
11/21/2002US20020174292 Memory controller
11/21/2002US20020174291 High speed embedded dram with sram-like interface
11/21/2002US20020173111 Multilayer; lower electrode, ferroelectricity film and electrode
11/21/2002US20020173101 Embedded electrically programmable read only memory devices
11/21/2002US20020173095 Method of making high density semiconductor memory
11/21/2002US20020172840 Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor
11/21/2002US20020172090 SDRAM having data latch circuit for outputting input data in synchronization with a plurality of control signals
11/21/2002US20020172087 Address control apparatus of semiconductor memory device using bank address
11/21/2002US20020172083 Data memory
11/21/2002US20020172080 Propagation delay independent sdram data capture device and method
11/21/2002US20020172078 Semiconductor memory device
11/21/2002US20020172074 Integrated chip having SRAM, DRAM and Flash memory and method for fabricating the same
11/21/2002US20020172073 Thin film magnetic memory device capable of conducting stable data read and write operations
11/21/2002US20020172070 Semiconductor memory device
11/21/2002US20020172069 Sensing device for a passive matrix memory and a read method for use therewith
11/21/2002US20020172068 Thin film magnetic memory device having a magnetic tunnel junction
11/21/2002US20020172067 Early write dram architecture with vertically folded bitlines
11/21/2002US20020171470 Negative voltage generator for a semiconductor memory device
11/21/2002US20020171461 Semiconductor device with multiple power sources
11/21/2002US20020171453 Differential amplifier circuit capable of accurately amplifying even high-speeded signal of small amplitude
11/21/2002DE10220970A1 Halbleiterspeichervorrichtung A semiconductor memory device
11/21/2002DE10122075A1 Semiconductor storage cell used as a planar localized electron device comprises a layer structure with a control electrode for controlling a current flow through the structure, a bit line, and a storage transistor
11/20/2002EP1258923A2 Semiconductor memory device and manufacturing method for the same
11/20/2002EP1258888A2 Multi-port memory cell with refresh port
11/20/2002EP1258887A2 Memory architecture with refresh and sense amplifiers
11/20/2002CN1380746A Semiconductor memory with single clock signal line
11/20/2002CN1380698A Method and device for high-speed read operation in semiconductor memory
11/20/2002CN1380660A 控制电路和半导体存储器装置 The control circuit and semiconductor memory device
11/20/2002CN1380607A Memory and circuit for ordering its prefetched data and its method
11/19/2002US6484277 Integrated memory having a redundancy function
11/19/2002US6484271 Memory redundancy techniques
11/19/2002US6484270 Electric device with flash memory built-in
11/19/2002US6484268 Signal transmission system having a timing adjustment circuit
11/19/2002US6484246 High-speed random access semiconductor memory device
11/19/2002US6484232 Adaptive calibration technique for high speed memory devices
11/19/2002US6484231 Synchronous SRAM circuit
11/19/2002US6483772 Semiconductor memory device capable of masking data to be written
11/19/2002US6483770 Synchronous semiconductor memory device and method for operating same
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