Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2002
12/31/2002US6501675 Alternating reference wordline scheme for fast DRAM
12/31/2002US6501674 Semiconductor memory and its driving method
12/31/2002US6501672 Dynamic random access memory (DRAM) capable of canceling out complementary noise developed in plate electrodes of memory cell capacitors
12/31/2002US6501671 Semiconductor memory device enabling selective production of different semiconductor memory devices operating at different external power-supply voltages
12/31/2002US6501670 High speed memory architecture and busing
12/31/2002US6501668 Semiconductor memory device
12/31/2002US6501316 Clock control method and circuit
12/31/2002US6501309 Semiconductor device having timing stabilization circuit with overflow detection function
12/31/2002US6501144 Conductive line with multiple turns for programming a MRAM device
12/31/2002US6501117 Static self-refreshing DRAM structure and operating mode
12/31/2002US6501110 Semiconductor memory cell
12/27/2002WO2002103798A1 Magnetic memory and its drive method, and magnetic memory apparatus comprising it
12/27/2002WO2002103740A2 Focusing lens for electron emitter
12/27/2002WO2002103704A1 Multilevel cell memory architecture
12/27/2002WO2002103703A2 Semiconductor device
12/27/2002WO2002103702A2 Digital storage cell device
12/27/2002WO2002103648A1 Printable magnetic sheet
12/27/2002WO2002050842A3 Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix
12/27/2002WO2002047089A3 Magnetoresistive memory and method for reading out from the same
12/26/2002US20020199056 Semiconductor device with non-volatile memory and random access memory
12/26/2002US20020197797 Non-volatile read only memory and its manufacturing method
12/26/2002US20020197788 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same
12/26/2002US20020197739 High efficiency magnetic sensor for magnetic particles
12/26/2002US20020196700 Write data masking for higher speed drams
12/26/2002US20020196699 Method and apparatus for setting write latency
12/26/2002US20020196698 Symmetric segmented memory array architecture
12/26/2002US20020196697 Semiconductor memory device with improved flexible redundancy scheme
12/26/2002US20020196692 Proportional to temperature voltage generator
12/26/2002US20020196690 Semiconductor memory device
12/26/2002US20020196689 Semiconductor memory device and data read method thereof
12/26/2002US20020196684 Semiconductor memory device and method of repairing the same
12/26/2002US20020196683 Semiconductor integrated circuit device provided with a self-testing circuit for carrying out an analysis for repair by using a redundant memory cell
12/26/2002US20020196682 Memory device
12/26/2002US20020196681 Semiconductor integrated circuit device and semiconductor memory device reprogrammable after assembly
12/26/2002US20020196680 Semiconductor memory device with reduced number of redundant program sets
12/26/2002US20020196675 Write data masking for higher speed drams
12/26/2002US20020196674 Semiconductor memory device
12/26/2002US20020196671 Dram module and method of using sram to replace damaged dram cell
12/26/2002US20020196669 Decoding scheme for a stacked bank architecture
12/26/2002US20020196668 Distributed write data drivers for burst access memories
12/26/2002US20020196664 Biasing circuit for multi-level memory cells
12/26/2002US20020196661 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
12/26/2002US20020196658 Magnetic recording element, magnetic memory, magnetic recording method, method for a fabricating a magnetic recording element, and method for a fabricating a magnetic memory
12/26/2002US20020196657 Magnetic memory device in which influence of adjacent memory cell is controllable
12/26/2002US20020196656 Ferroelectric memory and semiconductor memory
12/26/2002US20020196655 Array architecture for depletion mode ferroelectric memory devices
12/26/2002US20020196654 Semiconductor memory device
12/26/2002US20020196653 Ferroelectric memory devices having expanded plate lines and methods of fabricating the same
12/26/2002US20020196647 Resistive cross point array of short-tolerant memory cells
12/26/2002US20020196171 Analog-to-digital conversion method and device, in high-density multilevel non-volatile memory devices
12/26/2002US20020196074 Semiconductor integrated circuit
12/26/2002US20020196058 Low-amplitude driver circuit
12/26/2002US20020196053 Semiconductor integrated circuit and semiconductor logic circuit used in the integrated circuit
12/26/2002US20020195678 Semiconductor integrated circuit device
12/26/2002US20020195630 Semiconductor device
12/26/2002US20020195621 Programmable resistance memory element and method for making same
12/25/2002CN1387262A Semiconductor IC
12/25/2002CN1387260A Embedded flash memory cell written and erased via channel and its preparing process
12/25/2002CN1387196A Method for updating dynamic memory
12/25/2002CN1387195A Magnetic recording element, magnetic memory, magnetic recording method, and method for mfg. magnetic recording element and method for mfg. magnetic memory
12/25/2002CN1097343C Interface circuit and method of setting determination level therefor
12/25/2002CN1097314C 半导体存储装置 The semiconductor memory device
12/25/2002CN1097268C Dynamic single to multiple bit per cell memory
12/25/2002CN1097233C Word line driving circuit for semiconductor memory device
12/25/2002CN1097227C Error management processes for flash EEPROM memory arrays
12/24/2002US6499089 Method, architecture and circuitry for independently configuring a multiple array memory device
12/24/2002US6498766 Integrated circuit memory devices that utilize indication signals to increase reliability of reading and writing operations and methods of operating same
12/24/2002US6498765 Semiconductor integrated circuit
12/24/2002US6498763 Semiconductor memory device having a memory block with a decreased capacitance
12/24/2002US6498762 Semiconductor integrated circuit device and method of activating the same
12/24/2002US6498760 Semiconductor device having test mode
12/24/2002US6498758 Twisted bitlines to reduce coupling effects (dual port memories)
12/24/2002US6498755 Semiconductor storage device conducting a late-write operation and controlling a test read-operation to read data not from a data latch circuit but from a memory core circuit regardless of whether a preceding address and a present address match each other
12/24/2002US6498747 Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects
12/24/2002US6498746 Disturbing a ferroelectric memory array in a particular direction
12/24/2002US6498745 Circuit for generating timing of reference plate line in nonvolatile ferroelectric memory device and method for driving reference cell
12/24/2002US6498744 Ferroelectric data processing device
12/24/2002US6498743 Method for supplying reference potential to sense amplifier circuit in semiconductor integrated circuit, semiconductor integrated circuit, semiconductor device equipped with many of the semiconductor integrated circuits, and electronic apparatus using the semiconductor device
12/24/2002US6498742 Memory device
12/24/2002US6498741 Semiconductor memory device
12/24/2002US6498739 Applications for non-volatile memory cells
12/24/2002US6498522 Semiconductor device
12/24/2002US6498469 Internal supply voltage generating circuit and method of generating internal supply voltage using an internal reference voltage generating circuit and voltage-drop regulator
12/24/2002US6498066 Ultra-late programming ROM and method of manufacture
12/19/2002WO2002101928A1 Nonvolatile selector, and integrated circuit device
12/19/2002WO2002101751A2 Digital magnetic storage cell device
12/19/2002WO2002101750A2 Digital magnetic storage cell device
12/19/2002WO2002101748A2 Sense amplifier and architecture for open digit arrays
12/19/2002WO2002101747A2 Draw with bit line precharging, inverting data writing, retained data output and reduced power consumption
12/19/2002WO2002101746A2 Sense amplifier with improved latching
12/19/2002WO2002069132A3 Improved high speed data capture circuit for a digital device
12/19/2002WO2002039454A3 Magnetoresistive memory (mram)
12/19/2002US20020194546 Synchronous semiconductor memory device capable of reducing test cost and method of testing the same
12/19/2002US20020194453 Reduction of bus switching activity
12/19/2002US20020194450 Apparatus and structure for rapid enablement
12/19/2002US20020194425 Method and apparatus for integrated circuit with DRAM
12/19/2002US20020194424 Multiport memory, data processor and data processing system
12/19/2002US20020194420 Semiconductor redundant memory provided in common
12/19/2002US20020194416 Information processing system with memory modules of a serial bus architecture
12/19/2002US20020193036 Focusing lens for electron emitter
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