Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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02/10/2004 | US6690597 Multi-bit PROM memory cell |
02/10/2004 | US6690419 Utilising eye detection methods for image processing in a digital image camera |
02/10/2004 | US6690241 Ring oscillator having variable capacitance circuits for frequency adjustment |
02/10/2004 | US6690226 Substrate electric potential sense circuit and substrate electric potential generator circuit |
02/10/2004 | US6690058 Self-aligned multi-bit flash memory cell and its contactless flash memory array |
02/10/2004 | US6689622 Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication |
02/10/2004 | US6688528 Compact display assembly |
02/05/2004 | WO2004012272A1 Spin transistor using spin filter effect and nonvolatile memory using spin transistor |
02/05/2004 | WO2004012199A1 Magnetic random access memory |
02/05/2004 | WO2004012198A1 Composite storage circuit and semiconductor device having the same composite storage circuit |
02/05/2004 | WO2004012197A2 Magnetoresistive random access memory with soft magnetic reference layer |
02/05/2004 | WO2004012196A2 Semiconductor memory device and method for initializing the same |
02/05/2004 | WO2003092012A3 Flexible redundancy for memories |
02/05/2004 | WO2003060919A3 Resistive memory elements with reduced roughness |
02/05/2004 | WO2003049120A3 Magnetoresistive memory cell comprising a dynamic reference layer |
02/05/2004 | US20040024957 Window-based flash memory storage system and management and access methods thereof |
02/05/2004 | US20040022249 Semiconductor memory device having faulty cells |
02/05/2004 | US20040022118 Semiconductor memory device and associated data read method |
02/05/2004 | US20040022117 Memory device and method of operating the memory device |
02/05/2004 | US20040022116 Method and apparatus for saving current in a memory device |
02/05/2004 | US20040022114 Semiconductor memory device allowing reduction of an area loss |
02/05/2004 | US20040022112 High voltage pulse method and apparatus for digital multilevel non-volatile memory integrated system |
02/05/2004 | US20040022109 Single data line sensing scheme for TCCT-based memory cells |
02/05/2004 | US20040022106 Integrated synchronous memory and memory configuration having a memory module with at least one synchronous memory |
02/05/2004 | US20040022105 Semiconductor memory device and method of manufacturing the same |
02/05/2004 | US20040022103 Limiter for refresh signal period in dram |
02/05/2004 | US20040022098 Semiconductor memory |
02/05/2004 | US20040022097 Magnetic random access memory device capable of providing a constant current to a reference cell |
02/05/2004 | US20040022091 Semiconductor device |
02/05/2004 | US20040022090 Ferroelectric memory device |
02/05/2004 | US20040022088 Programmable DQS preamble |
02/05/2004 | US20040022085 Refreshing memory cells of a phase change material memory device |
02/05/2004 | US20040022083 Semiconductor memory device having consistent skew over entire memory core |
02/05/2004 | US20040022005 Radiation-hard circuit |
02/05/2004 | US20040021500 Internal voltage generating circuit with variable reference voltage |
02/05/2004 | US20040021190 Methods of forming magnetoresistive memory devices |
02/05/2004 | US20040021189 Magnetic memory device having yoke layer, and manufacturing method thereof |
02/05/2004 | US20040021187 Systems with high density packing of micromachines |
02/05/2004 | US20040021137 Semiconductor device |
02/05/2004 | DE19751990B4 Datenausgangspuffer für eine Speichereinrichtung Data output buffer for a memory device |
02/05/2004 | DE10234493B3 Voltage sense signal generation device for power semiconductor component uses capacitive voltage divider in parallel with source-drain path |
02/05/2004 | DE10229163B3 Speicherbaustein mit gekreuzten Bitleitungen und Verfahren zum Auslesen Memory module with crossed bit lines and method for reading |
02/04/2004 | EP1387494A1 CMOS circuits with protection for a single event upset |
02/04/2004 | EP1387400A2 Magnetic memory device having yoke layer, and manufacturing method thereof |
02/04/2004 | EP1387362A2 Reading circuit, reference circuit, and semiconductor memory device |
02/04/2004 | EP1387361A2 Semiconductor memory device |
02/04/2004 | EP1387360A2 Cubic memory array |
02/04/2004 | EP1386398A2 Antifuse reroute of dies |
02/04/2004 | EP1386322A2 High density giant magnetoresistive memory cell |
02/04/2004 | CN1472816A Nonvolatile static ROM memories |
02/04/2004 | CN1472812A Semiconductor memory device with signal distributive circuits formed above memory unit |
02/04/2004 | CN1472811A Assembled static random read only memories and mask ROM memories |
02/04/2004 | CN1472746A Double port static memory unit and semiconductor device therewith |
02/04/2004 | CN1472745A Ferromagnetic memory device and its picking-up method |
02/04/2004 | CN1137492C 半导体集成电路器件 The semiconductor integrated circuit device |
02/04/2004 | CN1137491C Recoded autorefresh mode in DRAM |
02/04/2004 | CN1137490C Ferroelectric memory device |
02/04/2004 | CN1137466C Exchange bonding film, magneto-resistant effect element, magnet head and magnet memory |
02/03/2004 | US6687843 Rambus DRAM with clock control circuitry that reduces power consumption |
02/03/2004 | US6687783 Access apparatus and method for accessing a plurality of storage device having different characteristics |
02/03/2004 | US6687185 Method and apparatus for setting and compensating read latency in a high speed DRAM |
02/03/2004 | US6687182 Semiconductor memory device |
02/03/2004 | US6687181 Semiconductor memory device with less data transfer delay time |
02/03/2004 | US6687179 Method and system for writing data in an MRAM memory device |
02/03/2004 | US6687178 Temperature dependent write current source for magnetic tunnel junction MRAM |
02/03/2004 | US6687177 Reference cells with integration capacitor |
02/03/2004 | US6687176 First bit databurst firing of IO equilibrating ending signal based on column access signal |
02/03/2004 | US6687175 Semiconductor device |
02/03/2004 | US6687174 Semiconductor memory device capable of switching output data width |
02/03/2004 | US6687173 Circuit for testing ferroelectric capacitor in FRAM |
02/03/2004 | US6687172 Individual memory page activity timing method and system |
02/03/2004 | US6687171 Flexible redundancy for memories |
02/03/2004 | US6687169 Semiconductor memory device for providing address access time and data access time at a high speed |
02/03/2004 | US6687166 Bus interface circuit and receiver circuit |
02/03/2004 | US6687160 Reference current generation circuit for multiple bit flash memory |
02/03/2004 | US6687154 Highly-integrated flash memory and mask ROM array architecture |
02/03/2004 | US6687153 Programming a phase-change material memory |
02/03/2004 | US6687152 Semiconductor memory device |
02/03/2004 | US6687151 Voltage generation circuit for selectively generating high and negative voltages on one node |
02/03/2004 | US6687150 Reference voltage generation for memory circuits |
02/03/2004 | US6687149 Volumetric electro-optical recording |
02/03/2004 | US6687148 High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
02/03/2004 | US6687147 Cubic memory array with diagonal select lines |
02/03/2004 | US6687146 Interleaved wordline architecture |
02/03/2004 | US6687145 Static random access memory cell and method |
02/03/2004 | US6686786 Voltage generator stability indicator circuit |
02/03/2004 | US6686762 Memory module using DRAM package to match channel impedance |
02/03/2004 | US6686646 Diverse band gap energy level semiconductor device |
02/03/2004 | US6686632 Dual-bit multi-level ballistic MONOS memory |
02/03/2004 | US6686631 Negative differential resistance (NDR) device and method of operating same |
02/03/2004 | US6686267 Method for fabricating a dual mode FET and logic circuit having negative differential resistance mode |
01/29/2004 | WO2004010503A1 Ferroelectric gate device |
01/29/2004 | WO2004010436A1 Multi-state mram with improved storage density |
01/29/2004 | WO2004010435A2 A system, apparatus, and method for a flexible dram architecture |
01/29/2004 | WO2003050690A3 Sequential nibble burst ordering for data |
01/29/2004 | WO2003044802A3 Complementary bit pcram (programmable conductor ram) and method of operation |
01/29/2004 | WO2002103703A3 Semiconductor device |
01/29/2004 | WO2002071448A3 Single transistor ferroelectric memory cell |
01/29/2004 | US20040019758 Memory module and memory system suitable for high speed operation |
01/29/2004 | US20040019756 Memory device supporting a dynamically configurable core organization |