Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2003
12/03/2003EP1367593A1 Semiconductor memory and method for entering its operation mode
12/03/2003EP1367592A2 Thermally stable ferroelectric memory
12/03/2003EP1366497A2 Higher program vt and faster programming rates based on improved erase methods
12/03/2003EP1273009B1 Current conveyor and method for readout of mtj memories
12/03/2003EP1119862B1 Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same
12/03/2003EP0956560B1 Sense amplifier circuit
12/03/2003CN1460269A At-speed built-in self testing of multi-port compact SRAMS
12/03/2003CN1460268A Non-volatile memory with imprved programming and method therefor
12/03/2003CN1459877A 有机场效应晶体管 Organic field effect transistor
12/03/2003CN1459864A Two transistor static random access storage unit and its operation method
12/03/2003CN1459863A Nonvolatile semiconductor storage capable of uniformly input/output data
12/03/2003CN1459862A Semiconductor storage capable of correctly writing data
12/03/2003CN1459859A Isolation of storage location
12/03/2003CN1459798A Semiconductor storage needing to renovate work
12/03/2003CN1459797A Semiconductor storage convertible into two storage unit structure
12/03/2003CN1459796A Semiconductor device for use in two systems with different power voltages
12/03/2003CN1459795A Ferroelectric storage device with board wire control circuit and operating method thereof
12/03/2003CN1459794A Heat stable ferroelectric body memory
12/03/2003CN1459793A Constant voltage sensitive MRAM with series diode
12/03/2003CN1459792A Triple sampling readout of magnetic RAM having series diode
12/03/2003CN1459791A Film magnet storage device of multi-storage unit shared access element
12/03/2003CN1459683A Circuit and method for producing internal clock signal
12/03/2003CN1130022C Semiconductor circuit device operating in synchronization with clock signal
12/03/2003CN1129915C Integrated logic circuit and EEP ROM
12/03/2003CN1129911C Synchronous type semiconductor storage
12/03/2003CN1129910C Device for generating reference electric potential and semiconductor memory apparatus equipped with same
12/03/2003CN1129909C Read out amplifier
12/02/2003US6658612 Test signal generating circuit of a semiconductor device with pins receiving signals of multiple voltage levels and method for invoking test modes
12/02/2003US6658609 Semiconductor memory device with a test mode
12/02/2003US6658544 Techniques to asynchronously operate a synchronous memory
12/02/2003US6658523 System latency levelization for read data
12/02/2003US6657920 Circuit for generating internal address in semiconductor memory device
12/02/2003US6657915 Wordline driver for ensuring equal stress to wordlines in multi row address disturb test and method of driving the wordline driver
12/02/2003US6657911 Semiconductor device with low power consumption memory circuit
12/02/2003US6657909 Memory sense amplifier
12/02/2003US6657908 DDR SDRAM for stable read operation
12/02/2003US6657906 Active termination circuit and method for controlling the impedance of external integrated circuit terminals
12/02/2003US6657904 Semiconductor device
12/02/2003US6657903 Circuit for generating power-up signal
12/02/2003US6657902 Technique of controlling noise of power supply in semiconductor memory device
12/02/2003US6657901 Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit
12/02/2003US6657895 Reading circuit and method for a multilevel non-volatile memory
12/02/2003US6657891 Semiconductor memory device for storing multivalued data
12/02/2003US6657890 Magnetic memory device
12/02/2003US6657889 Memory having write current ramp rate control
12/02/2003US6657888 Application of high spin polarization materials in two terminal non-volatile bistable memory devices
12/02/2003US6657887 Semiconductor memory device having improved noise margin, faster read rate and reduced power consumption
12/02/2003US6657886 Split local and continuous bitline for fast domino read SRAM
12/02/2003US6657884 High density non-volatile memory device
12/02/2003US6657883 Semiconductor memory device
12/02/2003US6657882 Semiconductor memory device and various systems mounting them
12/02/2003US6657881 Reconfiguring storage modes in a memory
12/02/2003US6657459 Gate circuit and semiconductor circuit to process low amplitude signals, memory, processor and information processing system manufactured by use of them
12/02/2003US6657278 Diverse band gap energy level semiconductor device
12/02/2003US6657270 Magnetic random access memory using bipolar junction transistor, and method for fabricating the same
12/02/2003US6657253 Memory of multilevel quantum dot structure and method for fabricating the same
12/02/2003US6657246 MRAM with an effective noise countermeasure
12/02/2003US6656763 Spin on polymers for organic memory devices
12/02/2003US6656114 Method and a system for assisting a user in a medical self treatment, said self treatment comprising a plurality of actions
11/2003
11/27/2003WO2003098637A1 Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
11/27/2003WO2003098636A2 STACKED 1T-nMEMORY CELL STRUCTURE
11/27/2003WO2003098635A1 Method of manufacturing mram offset cells in a double damascene structure with a reduced number of etch steps
11/27/2003WO2003098634A2 Magnetoresistive memory cell array and mram memory comprising such array
11/27/2003WO2003098632A2 Methods of fabricating magnetoresistive memory devices
11/27/2003WO2003043016A3 A biasing technique for a high density sram
11/27/2003WO2003025937A3 Background operation for memory cells
11/27/2003WO2003019569A3 Magneto-electronic component
11/27/2003WO2003007306A3 Method and system for banking register file memory arrays
11/27/2003WO2002101751A3 Digital magnetic storage cell device
11/27/2003WO2002082452A3 Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
11/27/2003WO2002078191A3 Current folding cell and circuit comprising at least one folding cell
11/27/2003US20030221044 Memory system, module and register
11/27/2003US20030219088 Digital DLL apparatus for correcting duty cycle and method thereof
11/27/2003US20030218931 Semiconductor memory device requiring refresh operation
11/27/2003US20030218930 Partial refresh for synchronous dynamic random access memory (sdram) circuits
11/27/2003US20030218928 Semiconductor memory device having a circuit for fast operation
11/27/2003US20030218927 RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers
11/27/2003US20030218926 MRAM configuration having selection transistors with a large channel width
11/27/2003US20030218925 Methods for storing data in non-volatile memories
11/27/2003US20030218921 Latency time switch for an S-DRAM
11/27/2003US20030218920 Highly compact Eprom and flash EEprom devices
11/27/2003US20030218918 Data writing method and memory system for using the method
11/27/2003US20030218916 Semiconductor memory device having preamble function
11/27/2003US20030218914 Semiconductor device with impedance control circuit
11/27/2003US20030218913 Stepped pre-erase voltages for mirrorbit erase
11/27/2003US20030218910 Semiconductor memory device capable of accurately writing data
11/27/2003US20030218907 Nonvolatile semiconductor memory device having narrower threshold distribution
11/27/2003US20030218906 Memory cell isolation
11/27/2003US20030218905 Equi-potential sensing magnetic random access memory (MRAM) with series diodes
11/27/2003US20030218904 Programming a phase-change material memory
11/27/2003US20030218903 Nonvolatile memory device utilizing spin-valve-type designs and current pulses
11/27/2003US20030218902 Triple sample sensing for magnetic random access memory (MRAM) with series diodes
11/27/2003US20030218901 Thin film magnetic memory device having an access element shared by a plurality of memory cells
11/27/2003US20030218900 Semiconductor memory
11/27/2003US20030218899 Ferroelectric memory devices having a plate line control circuit and methods for operating the same
11/27/2003US20030218898 Grouped plate line drive architecture and method
11/27/2003US20030218897 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data
11/27/2003US20030218896 Combined memory
11/27/2003US20030218497 Semiconductor integrated circuit
11/27/2003US20030218490 Circuit and method for generating internal clock signal
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