Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2004
02/26/2004US20040037132 Semiconductor memory device
02/26/2004US20040037129 Method for reading a memory cell in a semiconductor memory, and semiconductor memory
02/26/2004US20040037127 utilize differential pFET floating gate transistors to store information
02/26/2004US20040037112 Nonvolatile semiconductor memory device having improved redundancy relieving rate
02/26/2004US20040037110 Thin film magnetic memory device conducting read operation and write operation in parallel
02/26/2004US20040037109 Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
02/26/2004US20040037108 Semiconductor memory device storing ternary data signal
02/26/2004US20040037107 Semiconductor storage device including random access memory cells having a plurality of indendently accessible access ports
02/26/2004US20040036571 Magnetically-and electrically-induced variable resistance materials and method for preparing same
02/26/2004US20040036508 Amplifier for reading storage cells with exclusive-or type function
02/26/2004US20040036507 Semiconductor integrated circuit having logic circuit comprising transistors with lower threshold voltage values and improved pattern layout
02/26/2004US20040036456 Boosted voltage supply
02/26/2004US20040036109 Memory cell and memory device
02/26/2004US20040036104 Semiconductor memory device
02/26/2004US20040036096 High-speed transparent refresh DRAM-based memory cell
02/26/2004US20040036088 Static semiconductor memory device
02/26/2004US20040035920 Recording medium, and recording apparatus, reproducing apparatus, recording method and control method thereof
02/26/2004DE4337740B4 Halbleiterspeichervorrichtung und Verfahren zum Treiben einer Halbleiterspeichervorrichtung A semiconductor memory device and method for driving a semiconductor memory device
02/26/2004DE4243903B4 Wortleitung-Spannungsversorgungskreis Word line voltage supply circuit
02/26/2004DE10337542A1 Bitleitungs-Vorladeschaltung für ein Halbleiterspeicherbauelement Bit line precharge circuit for a semiconductor memory device
02/26/2004DE10336294A1 Temperature sensor circuit and method for definition of a trigger temperature for use with temperature controlled semiconductor components, whereby said circuit has a variable resistance circuit connected to a comparator circuit
02/26/2004DE10326088A1 Autoeinstellung einer Selbstauffrischfrequenz Auto setting a Selbstauffrischfrequenz
02/26/2004DE10310539A1 Halbleiterspeichervorrichtung, die stabil betrieben werden kann A semiconductor memory device which can be operated stably
02/26/2004DE10310538A1 Halbleiterspeichervorrichtung mit verringerter Dauer des Tests des Speicherzellen-Datenschreibens oder -Datenlesens oder des Tests der Leseverstärkerleistung A semiconductor memory device with a reduced duration of the test of the memory cell or data writing -Datenlesens or the test, the sense amplifier power
02/26/2004DE10215546B4 Schaltungsanordnung zur Umsetzung von Logiksignalpegeln Circuit arrangement for the implementation of logic signal levels
02/25/2004EP1391942A1 Tunnel magnetoresistance element
02/25/2004EP1391894A2 Magnetic memory array and its read/write method
02/25/2004EP1390951A2 Dynamic memory and method for testing a dynamic memory
02/25/2004CN1478300A Information memory device and electrionic apparatus with mounted information memory device
02/25/2004CN1478281A Method and system for dual bit memory erase verification
02/25/2004CN1478280A Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells
02/25/2004CN1477713A Static semiconductor storage
02/25/2004CN1477707A Integrated circuit for semiconductor
02/25/2004CN1477646A Semiconductor storage device
02/25/2004CN1477645A Nonvolatile semiconductor memory with raised probability of redundant remedy
02/25/2004CN1477643A Nonvolatile storage for carrying out consistency comparision action
02/25/2004CN1477642A Semiconductor storage for storing 3 value data signal
02/25/2004CN1477641A Semiconductor storage
02/25/2004CN1477640A Fetch circuit, reference circuit and semiconductor storage device
02/25/2004CN1477639A Low consumption electric current semiconductor storage device
02/25/2004CN1477638A Parallel process data readout and write in film magnetic memory
02/25/2004CN1477492A Display device and display system using the same
02/24/2004US6697992 Data storing method of dynamic RAM and semiconductor memory device
02/24/2004US6697926 Method and apparatus for determining actual write latency and accurately aligning the start of data capture with the arrival of data at a memory device
02/24/2004US6697910 Semiconductor memory device having refresh circuit
02/24/2004US6697909 Method and apparatus for performing data access and refresh operations in different sub-arrays of a DRAM cache memory
02/24/2004US6697297 Apparatus for setting write latency
02/24/2004US6697296 Clock synchronous semiconductor memory device
02/24/2004US6697295 Memory device having a programmable register
02/24/2004US6697294 Designs of reference cells for magnetic tunnel junction (MTJ) MRAM
02/24/2004US6697292 Semiconductor memory device capable of changing the selection order of sense amplifiers
02/24/2004US6697279 Ferroelectric read/write memory with series-connected memory cells (CFRAM)
02/24/2004US6697278 Semiconductor memory device
02/24/2004US6696867 Voltage generator with stability indicator circuit
02/24/2004US6696862 Semiconductor memory device input circuit
02/24/2004US6696860 Variable voltage data buffers
02/24/2004US6696742 Semiconductor memory device
02/24/2004US6696737 Unipolar spin transistor and the applications of the same
02/24/2004US6696330 Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
02/19/2004WO2004015791A2 Magnetoresistant device and magnetic memory device further comme nts
02/19/2004WO2004015778A1 Nonvolatile memory device
02/19/2004WO2004015711A2 Low leakage asymmetric sram cell devices
02/19/2004WO2003043015A3 Multiple turn for conductive line programming mram
02/19/2004WO2002101748A3 Sense amplifier and architecture for open digit arrays
02/19/2004US20040034749 Programmable embedded dram current monitor
02/19/2004US20040034735 Programmable refresh scheduler for embedded DRAMs
02/19/2004US20040034732 Apparatus and method for placing memory into self-refresh state
02/19/2004US20040032790 Semiconductor memory device with efficient buffer control for data buses
02/19/2004US20040032785 Method for multilevel DRAM sensing
02/19/2004US20040032784 Apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
02/19/2004US20040032782 System and method for power saving memory refresh for dynamic random access memory devices after an extended interval
02/19/2004US20040032781 Refresh controller and address remapping circuit and method for dual mode full/reduced density DRAMs
02/19/2004US20040032779 Semiconductor memory device
02/19/2004US20040032777 Magnetic memory which compares first memory cell data bits and second data bits
02/19/2004US20040032774 Non-volatile semiconductor memory device and data write control method for the same
02/19/2004US20040032772 Semiconductor memory, method for controlling refreshment of it, and method for setting memory cell array specific ara for realizing the control method
02/19/2004US20040032770 Negative differential resistance (NDR) based memory device with reduced body effects
02/19/2004US20040032769 Semiconductor storage device and controlling method therefor
02/19/2004US20040032768 Semiconductor memory
02/19/2004US20040032765 Closed flux magnetic memory
02/19/2004US20040032764 Semiconductor memory device
02/19/2004US20040032761 Secure and static 4T SRAM cells in EDRAM technology
02/19/2004US20040032760 Dual loop sensing scheme for resistive memory elements
02/19/2004US20040032759 Memory device, circuits and methods for operating a memory device
02/19/2004US20040032515 Camera with eye position detector
02/19/2004US20040032319 Devices and methods for controlling active termination resistors in a memory system
02/19/2004US20040031773 Method of fabricating an ink jet printhead
02/19/2004DE19843657B4 Integrierte Halbleiterschaltung A semiconductor integrated circuit
02/19/2004DE10254076A1 DRAM circuit has refresh sequence adjusting device with electrically programmable trim circuit in which frequency-determining network fuse elements are selectively changed to set state by overvoltage
02/19/2004DE10235454A1 Integrated memory and functional testing process for drams has address computing logic connected to an addressing unit
02/19/2004DE10234679A1 Memory device such as a dram and operating process has unit which only drives busses when an activation signal is active
02/19/2004DE10233878A1 Integrierter synchroner Speicher sowie Speicheranordnung mit einem Speichermodul mit wenigstens einem synchronen Speicher Integrated synchronous memory and memory device having a memory module having at least one synchronous memory
02/19/2004DE10232962A1 Schaltung und Verfahren zum Schreiben und Auslesen von Daten aus einer dynamischen Speicherschaltung Circuit and method for writing and reading out data from a dynamic memory circuit
02/19/2004DE10231954A1 Dynamic RAM component for receiving an external cycle with a clock pulsed period duration has a device to make available information representing the clock pulsed period duration
02/19/2004CA2495316A1 Low leakage asymmetric sram cell devices
02/18/2004EP1389780A2 Semiconductor integrated circuit device
02/18/2004EP1389335A1 Device and method for using complementary bits in a memory array
02/18/2004CN1476615A Integrated memory with arrangement of non-volatile memory cells and method for production and operation of integrated memory
02/18/2004CN1476109A Magnetic funnel node device and storage array
02/18/2004CN1476097A Semiconductor storage device