Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2003
12/11/2003US20030227795 Hybrid MRAM array structure and operation
12/11/2003US20030227794 System and method for enabling chip level erasing and writing for magnetic random access memory devices
12/11/2003US20030227792 Temperature compensated t-ram memory device and method
12/11/2003US20030227791 System and method to counteract voltage disturbances in open digitline array dynamic random access memory systems
12/11/2003US20030227790 Temperature compensated T-RAM memory device and method
12/11/2003US20030227307 Auto-adjustment of self-refresh frequency
12/11/2003US20030227304 Semiconductor integrated circuit device
12/11/2003US20030227294 Programming circuit and method having extended duration programming capabilities
12/11/2003US20030227078 Thin film transistor array panel for a liquid crystal display
12/11/2003US20030227060 Semiconductor integrated circuit and method for fabricating the same
12/11/2003US20030227041 Semiconductor memories
12/10/2003EP1369926A2 Ferroelectric memory transistor and method for forming the same
12/10/2003EP1369878A1 System for testing a group of functionally independent memories and for replacing failing memory words
12/10/2003EP1369876A2 Plate line non-drive improved reading method for a ferroelectric memory
12/10/2003EP1369875A1 Sensing data storage devices
12/10/2003EP1368829A2 Dram cell having a capacitor structure fabricated partially in a cavity and method for operating same
12/10/2003EP1368812A2 Circuit and method for test and repair
12/10/2003EP1287529B1 MULTI-GENERATOR, PARTIAL ARRAY V t?, TRACKING SYSTEM TO IMPROVE ARRAY RETENTION TIME
12/10/2003CN1461485A Semiconductor memory having dual port cell supporting hidden refresh
12/10/2003CN1461010A Semiconductor storage device
12/10/2003CN1461009A 半导体装置 Semiconductor device
12/10/2003CN1461008A Circuit device for semiconductor
12/10/2003CN1130775C Medium voltage generating circuit and nonvolatile semiconductor memory containing same
12/10/2003CN1130730C Dynamic RAM
12/10/2003CN1130729C Multi-bank synchronous semiconductor memory device
12/10/2003CN1130728C Burst length discriminating circuit
12/10/2003CN1130727C Programming flash memory using distributed learning method
12/10/2003CN1130726C Injection cover film for producing storage unit device
12/10/2003CN1130724C Circuit device for generating high output voltage
12/10/2003CN1130693C Magneto-resistive effect element and storage element
12/10/2003CN1130624C Semiconductor memory device
12/09/2003US6662263 Sectorless flash memory architecture
12/09/2003US6661735 Semiconductor memory device
12/09/2003US6661734 Semiconductor memory device
12/09/2003US6661732 Memory system having reduced powder data refresh
12/09/2003US6661731 Semiconductor memory, semiconductor integrated circuit and semiconductor mounted device
12/09/2003US6661729 Semiconductor device having test mode
12/09/2003US6661728 Supply voltage generating circuit and semiconductor memory device using same
12/09/2003US6661723 Wide databus architecture
12/09/2003US6661722 Layout method for bit line sense amplifier driver
12/09/2003US6661721 Systems and methods for executing precharge commands using posted precharge in integrated circuit memory devices with memory banks each including local precharge control circuits
12/09/2003US6661714 Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same
12/09/2003US6661708 Non-volatile memory with improved sensing and method therefor
12/09/2003US6661706 Semiconductor storage device having page copying
12/09/2003US6661704 Diode decoupled sensing method and apparatus
12/09/2003US6661703 Magneto-resistance effect film and memory using it
12/09/2003US6661702 Double gate DRAM memory cell having reduced leakage current
12/09/2003US6661700 Semiconductor memory device
12/09/2003US6661699 Random access memory cell having double-gate access transistor for reduced leakage current
12/09/2003US6661698 Nonvolatile ferroelectric memory control device
12/09/2003US6661697 Data read-out circuit, data read-out method, and data storage device
12/09/2003US6661696 Ferroelectric random access memory configurable output driver circuit
12/09/2003US6661695 Capacitance sensing technique for ferroelectric random access memory arrays
12/09/2003US6661694 Configuration and method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory
12/09/2003US6661689 Semiconductor memory device
12/09/2003US6661688 Method and article for concentrating fields at sense layers
12/09/2003US6661250 Programmable impedance control circuit
12/09/2003US6661218 High voltage detector
12/09/2003US6661092 Memory module
12/09/2003US6661071 Memory having plural magnetic layers and a shielding layer
12/09/2003US6661055 Prevents generation of a coupling noise; gate electrode electrically isolated by oxide film and connected to power supply source
12/09/2003US6661041 Digitline architecture for dynamic memory
12/09/2003US6661022 Information processing structures
12/09/2003US6660568 BiLevel metallization for embedded back end of the line structures
12/04/2003WO2003100791A1 Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
12/04/2003WO2003100790A1 Method of erasing a flashing memory using a pre-erasing step
12/04/2003WO2003100789A1 Combined memory
12/04/2003WO2003100788A2 Memory array having 2t memory cells
12/04/2003WO2003100786A2 Serially sensing the output of multilevel cell arrays
12/04/2003WO2003100595A1 Methods of factoring and modular arithmetic
12/04/2003WO2003063167A3 System and method for programming ono dual bit memory cells
12/04/2003US20030226064 Semiconductor memory device
12/04/2003US20030224608 Method for manufacturing magnetic random access memory
12/04/2003US20030223531 CMD and CMD-carrying CCD device
12/04/2003US20030223293 Synchronous type semiconductor memory device
12/04/2003US20030223292 Stacked 1T-nmemory cell structure
12/04/2003US20030223291 Multi-bit programmable memory cell having multiple anti-fuse elements
12/04/2003US20030223284 Semiconductor memory device capable of improving quality of voltage waveform given in a signal interconnection layer
12/04/2003US20030223283 Magnetic memory device
12/04/2003US20030223279 Clock driver in semiconductor memory device
12/04/2003US20030223277 Semiconductor memory device
12/04/2003US20030223276 Semiconductor memory device having the operating voltage of the memory cell controlled
12/04/2003US20030223272 Method and apparatus for erasing flash memory
12/04/2003US20030223269 Thin film magnetic memory device having redundant configuration
12/04/2003US20030223268 Thin film magnetic memory device having dummy cell
12/04/2003US20030223267 Reduced power bit line selection in memory circuits
12/04/2003US20030223266 Ferroelectric memory device
12/04/2003US20030223265 Method and apparatus for reading data from a ferromagnetic memory cell
12/04/2003US20030223264 Register having a ferromagnetic memory cells
12/04/2003US20030223263 Variable capacitances for memory cells within a cell group
12/04/2003US20030223262 Semiconductor memory device
12/04/2003US20030223261 Semiconductor memory device
12/04/2003US20030222676 Programmable array logic circuit whose product and input line junctions employ single bit non-volatile ferromagnetic cells
12/04/2003US20030222322 Magneto-resistive random access memory and method for manufacturing the same
12/04/2003US20030222317 Semiconductor memory device with improved soft-error resistance
12/04/2003US20030222291 Ferroelectric memory transistor
12/04/2003US20030222280 Apparatus and method for dual cell common electrode PCRAM memory device
12/04/2003US20030222279 Ferroelectric memory integrated circuit with improved reliability
12/04/2003DE10242817C1 Dynamic random-access memory circuit has memory bank divided into regions in turn divided into segments provided with master datalines for each segment diverging from region bus
12/03/2003EP1367659A2 Organic field effect transistor
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