| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 03/04/2004 | US20040042257 Semiconductor memory device having partially controlled delay locked loop |
| 03/04/2004 | US20040042256 Single transistor vertical memory gain cell |
| 03/04/2004 | US20040042255 Method and apparatus for latency specific duty cycle correction |
| 03/04/2004 | US20040042254 Semiconductor memory and method of controlling the same |
| 03/04/2004 | US20040042253 Low voltage detector and method for detecting low voltage of FeRAM, and system using the same |
| 03/04/2004 | US20040042252 FeRAM having new signal line structure |
| 03/04/2004 | US20040042251 Nonvolatile ferroelectric memory control device |
| 03/04/2004 | US20040042250 Ferroelectric memory device |
| 03/04/2004 | US20040042249 Random access memory device and method for driving a plate line segment therein |
| 03/04/2004 | US20040042247 Ferroelectric memory |
| 03/04/2004 | US20040042245 Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing column |
| 03/04/2004 | US20040042242 System and method to avoid voltage read errors in open digit line array dynamic random access memories |
| 03/04/2004 | US20040042129 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device |
| 03/04/2004 | US20040041608 Pulse generating circuit and semiconductor device provided with same |
| 03/04/2004 | US20040041607 Method and circuit for generating constant slew rate output signal |
| 03/04/2004 | US20040041606 Synchronous mirror delay (smd) circuit and method including a ring oscillator for timing coarse and fine delay intervals |
| 03/04/2004 | US20040041574 Accelerated test method for ferroelectric memory device |
| 03/04/2004 | US20040041236 Merged mos-bipolar capacitor memory cell |
| 03/04/2004 | US20040041212 Gated lateral thyristor-based random access memory cell (GLTRAM) |
| 03/04/2004 | US20040041209 Semiconductor element and semiconductor memory device using the same |
| 03/04/2004 | US20040041189 Random access memory device utilizing a vertically oriented select transistor |
| 03/04/2004 | US20040041183 Amorphous alloys for magnetic devices |
| 03/04/2004 | US20040041181 Method to isolate device layer edges through mechanical spacing |
| 03/04/2004 | US20040041173 Semiconductor storage and its refreshing method |
| 03/04/2004 | US20040041018 Card having coded data and visible information, for operating a device |
| 03/04/2004 | US20040040835 Process control; pulsed direct current; controlling pressure |
| 03/04/2004 | DE10337047A1 Erfassungsverstärker mit einseitigem Zurückschreiben Sense amplifier with unilateral rewriting |
| 03/04/2004 | DE10322733A1 Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung A semiconductor memory device with stable internal voltage generated |
| 03/04/2004 | DE10313881A1 Halbleiterspeichervorrichtung A semiconductor memory device |
| 03/04/2004 | DE10309390A1 Halbleiterspeichervorrichtung A semiconductor memory device |
| 03/04/2004 | DE10307991A1 Magnetische Dünnfilmspeichervorrichtung zum Durchführen des Lesebetriebs nach einem selbstreferenzierenden Verfahren Thin film magnetic memory device to perform the read operation according to a self-referencing process |
| 03/04/2004 | DE10261429A1 FeRAM mit neuer Signalleitungsstruktur FeRAM with new signal line structure |
| 03/04/2004 | DE10228527B3 Verfahren zum Überprüfen der Refresh-Funktion eines Informationsspeichers Method for checking the refresh function of an information store |
| 03/03/2004 | EP1394811A1 Accelerated test method for ferroelectric memory device |
| 03/03/2004 | EP1394808A2 Semiconductor memory |
| 03/03/2004 | EP1394807A2 Apparatus and method for placing memory into self-refresh state |
| 03/03/2004 | EP1394806A2 Semiconductor memory |
| 03/03/2004 | EP1393323A2 Non-volatile memory with improved programming and method therefor |
| 03/03/2004 | EP1393321A1 Propagation delay independent sdram data capture device and method |
| 03/03/2004 | CN1479945A Information memory and manufacturing method therefor |
| 03/03/2004 | CN1479924A Semiconductor memory device and refresh control circuit |
| 03/03/2004 | CN1479923A Memory device and method for operation of the same |
| 03/03/2004 | CN1479922A Magnetoresistive memory and method for reading out from the same |
| 03/03/2004 | CN1479378A 半导体存储器 Semiconductor memory |
| 03/03/2004 | CN1479366A Manufacturing method of semiconductor memory device |
| 03/03/2004 | CN1479361A Low-tension detector and method and system for detecting low-tension ferroeletric random access memory |
| 03/03/2004 | CN1479316A Method of programming, reading and erasing of non volatile storage with multi stage output current |
| 03/03/2004 | CN1479314A 半导体存储器 Semiconductor memory |
| 03/03/2004 | CN1479313A Semiconductor storing device and semiconductor integrated circuit |
| 03/03/2004 | CN1479312A Reference current producing circuit of multiple allocation flash storage |
| 03/03/2004 | CN1479311A Ferroelectric memory device and its programming method |
| 03/03/2004 | CN1479310A 存取电路 Access circuit |
| 03/03/2004 | CN1479202A Method of programmatic quick flashing storage element |
| 03/03/2004 | CN1140930C Method for making ferroelectronics/semiconductor memory of AIx-Ga1-xN/GaN heterojunction |
| 03/03/2004 | CN1140904C Synchronous semiconductor memory device with clock generating circuit |
| 03/03/2004 | CN1140903C Semiconductor storage device |
| 03/02/2004 | US6700830 Semiconductor integrated circuit |
| 03/02/2004 | US6700828 Semiconductor memory device |
| 03/02/2004 | US6700827 Cam circuit with error correction |
| 03/02/2004 | US6700826 Semiconductor apparatus |
| 03/02/2004 | US6700824 Distributed cell plate and/or digit equilibrate voltage generator |
| 03/02/2004 | US6700821 Programmable mosfet technology and programmable address decode and correction |
| 03/02/2004 | US6700820 Programming non-volatile memory devices |
| 03/02/2004 | US6700816 Semiconductor storage device conducting a late-write operation and controlling a test read-operation to read data not from a data latch circuit but from a memory core circuit regardless |
| 03/02/2004 | US6700814 Sense amplifier bias circuit for a memory having at least two distinct resistance states |
| 03/02/2004 | US6700813 Magnetic memory and driving method therefor |
| 03/02/2004 | US6700812 Nonvolatile ferroelectric memory device and method for driving the same |
| 03/02/2004 | US6700811 Random access memory device and method for driving a plate line segment therein |
| 03/02/2004 | US6700720 Ultrafast magnetization reversal |
| 03/02/2004 | US6700437 Semiconductor device including logic circuit and macro circuit which has a function for stopping a direct current |
| 03/02/2004 | US6700436 Method and circuit for generating a high voltage |
| 03/02/2004 | US6700434 Substrate bias voltage generating circuit |
| 03/02/2004 | US6700415 Sense amplifier with configurable voltage swing control |
| 03/02/2004 | US6700412 Semiconductor device |
| 03/02/2004 | US6700169 Semiconductor memory device |
| 03/02/2004 | US6700166 Semiconductor memory device with improved soft-error resistance |
| 03/02/2004 | US6700146 Semiconductor memory device and method for producing the same |
| 02/26/2004 | WO2004017410A1 Ferroelectric memory and its manufacturing method |
| 02/26/2004 | WO2004017328A1 Method for reading a structural phase-change memory |
| 02/26/2004 | WO2004017327A2 Ferroelectric memory device, circuits and methods for its operation |
| 02/26/2004 | WO2004017326A2 Dual loop sensing scheme for resistive memory elements |
| 02/26/2004 | WO2003100788A3 Memory array having 2t memory cells |
| 02/26/2004 | WO2003100786A3 Serially sensing the output of multilevel cell arrays |
| 02/26/2004 | WO2003063208A3 Array-based architecture for molecular electronics |
| 02/26/2004 | US20040039871 Replacement memory device |
| 02/26/2004 | US20040039870 Non-contiguous address erasable blocks and command in flash memory |
| 02/26/2004 | US20040039535 Repair of address-specific leakage |
| 02/26/2004 | US20040038445 Method of making programmable resistance memory element |
| 02/26/2004 | US20040037155 Dynamic memory word line driver scheme |
| 02/26/2004 | US20040037152 Non-volatile memory device conducting comparison operation |
| 02/26/2004 | US20040037150 disabling a high voltage generator responsive to a mode signal; and applying an external voltage to the semiconductor memory device through a pad responsive to the disabling |
| 02/26/2004 | US20040037149 Semiconductor memory device capable of normal transition to test mode |
| 02/26/2004 | US20040037148 improved gate dielectric characteristics |
| 02/26/2004 | US20040037144 Programming method of the memory cells in a multilevel non-volatile memory device |
| 02/26/2004 | US20040037143 each memory cell consists of four transistors configured to incorporate differential data storage |
| 02/26/2004 | US20040037142 Memory refresh methods and circuits |
| 02/26/2004 | US20040037141 DRAM power bus control |
| 02/26/2004 | US20040037140 Sense amplifier drive circuits responsive to predecoded column addresses and methods for operating the same |
| 02/26/2004 | US20040037139 reduced in chip size with a reduction in chip cost |
| 02/26/2004 | US20040037138 Direct read of dram cell using high transfer ratio |