Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2014
02/12/2014CN103579498A Switching device and operation method thereof and storage array
02/12/2014CN103579497A Magnetic junction, magnetic memory, method and system for providing magnetic junctions having improved characteristics
02/12/2014CN103579241A SRAM cell connection structure
02/12/2014CN103578532A Operating method of storage device, memory array and operating method of memory array
02/12/2014CN103578531A Negative bit line voltage generation circuit
02/12/2014CN103578530A Sub-threshold storage unit supporting column selection function
02/12/2014CN103578529A Subthreshold storage unit for changing power supply according to write data
02/12/2014CN103578528A Five transistor SRAM cell
02/12/2014CN103578527A Write driver circuit, semiconductor apparatus using the same, and memory system
02/12/2014CN103578526A Refresh address generator, a memory device and method of refreshing memory device
02/12/2014CN103578523A Memory device, memory system, and method of controlling read voltage of the memory device
02/12/2014CN103578520A Drive circuit and drive method
02/12/2014CN102376346B Dynamic random access memory unit and its data update method
02/12/2014CN102171812B 半导体器件 Semiconductor devices
02/12/2014CN102057439B Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
02/12/2014CN101925961B MRAM device with shared source line
02/11/2014US8650379 Data processing method for nonvolatile memory system
02/11/2014US8649226 Nonvolatile semiconductor memory device and erasing method of nonvolatile semiconductor memory device
02/11/2014US8649224 Non-volatile semiconductor memory device
02/11/2014US8649223 Semiconductor storage device
02/11/2014US8649222 Nonvolatile semiconductor memory device which transfers a plurality of voltages to memory cells and method of writing the same
02/11/2014US8649220 Nonvolatile semiconductor memory
02/11/2014US8649219 Erase inhibit for 3D non-volatile memory
02/11/2014US8649217 Non-volatile memory device and manufacturing method of the same
02/11/2014US8649216 Data writing method and data storage device for adjusting programming voltage values
02/11/2014US8649214 Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof
02/11/2014US8649213 Multiple bit phase change memory cell
02/11/2014US8649212 Method, apparatus and system to determine access information for a phase change memory
02/11/2014US8649211 Memory bit redundant vias
02/11/2014US8649210 DDR PSRAM and data writing and reading methods thereof
02/11/2014US8649209 Memory element circuitry with reduced oxide definition width
02/11/2014US8649208 Method for driving semiconductor device
02/11/2014US8649207 Sensing resistance variable memory
02/11/2014US8649206 Multi-bit resistance-switching memory cell
02/11/2014US8649205 Memory cell, a method for forming a memory cell, and a method for operating a memory cell
02/11/2014US8649204 Resistive memory devices and memory systems having the same
02/11/2014US8649203 Reversible resistive memory using polysilicon diodes as program selectors
02/11/2014US8649202 Resistance change memory including a resistive element
02/06/2014WO2014022565A1 Sram read preferred bit cell with write assist circuit
02/06/2014WO2014022304A1 Multiple-bits-per-cell voltage-controlled magnetic memory
02/06/2014US20140036585 Nonvolatile memory device using a threshold voltage switching material and method for manufacturing same
02/06/2014US20140036584 Capacitor-less memory cell, device, system and method of making same
02/06/2014US20140036582 Nonvolatile memory device
02/06/2014US20140036581 Sense amplifier for static random access memory
02/06/2014US20140036580 Memory circuit
02/06/2014US20140036579 Sense amplifier
02/06/2014US20140036578 Sram read preferred bit cell with write assist circuit
02/06/2014US20140036570 Operating method for memory device and memory array and operating method for the same
02/06/2014US20140036569 Resistive memory device
02/06/2014US20140036568 Reram device structure
02/06/2014US20140036388 System and method for manipulating domain pinning and reversal in ferromagnetic materials
02/06/2014US20140035671 Sense amplifier and electronic apparatus using the same
02/06/2014US20140035619 Semiconductor integrated circuit, programmable logic device, method of manufacturing semiconductor integrated citcuit
02/06/2014US20140035041 Techniques and configurations for stacking transistors of an integrated circuit device
02/06/2014DE112012001448T5 Kombinierter Pegelverschieber und Synchronisationsfehler-Beheber für Daten Combined level shifter and synchronization error Beheber for data
02/06/2014DE10228719B4 Vorrichtung und System zur Einstellung der DRAM-Auffrisch-Zeitsteuerung An apparatus and system for adjusting the DRAM refresh timing
02/06/2014DE102004060644B4 Direktzugriffsspeicher, Speichersteuerung und Verfahren unter Verwendung von Vorladezeitgebern in einem Testmodus Random access memory, memory controller and method using Vorladezeitgebern in a test mode
02/05/2014EP2693486A1 A nanomagnetic logic gate and an electronic device
02/05/2014EP2693439A1 Five transistor SRAM cell
02/05/2014EP2691959A1 Contact structure and method for variable impedance memory element
02/05/2014EP2691958A1 Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device
02/05/2014CN103563000A Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram)
02/05/2014CN103559908A Oscillation device, method of oscillation, and memory device
02/05/2014CN103559142A Refreshing method for dynamic random access memory
02/05/2014CN102314927B Magnetic random access memory cell array, memory and reading/writing method thereof
02/04/2014US8644090 Semiconductor device
02/04/2014US8644082 Memory apparatus and method for controlling erase operation of the same
02/04/2014US8644079 Method and circuit to discharge bit lines after an erase pulse
02/04/2014US8644078 Pulse control for nonvolatile memory
02/04/2014US8644076 Programmable memory device and memory access method
02/04/2014US8644075 Ramping pass voltage to enhance channel boost in memory device
02/04/2014US8644074 Nonvolatile memory device, programming method thereof and memory system including the same
02/04/2014US8644073 Non-volatile memory device with improved programming management and related method
02/04/2014US8644072 Three dimensionally stacked memory and the isolation of memory cell layer
02/04/2014US8644069 Semiconductor memory device
02/04/2014US8644068 Method and system for programming multi-state memory
02/04/2014US8644066 Multi-level non-volatile memory device, system and method with state-converted data
02/04/2014US8644065 Memory system with user configurable density/performance option
02/04/2014US8644063 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions
02/04/2014US8644062 Multi-level memory device using resistance material
02/04/2014US8644061 Variable resistance memory device performing program and verification operation
02/04/2014US8644060 Method of sensing data of a magnetic random access memories (MRAM)
02/04/2014US8644059 Semiconductor storage device
02/04/2014US8644058 Spin-injection element, and magnetic field sensor and magnetic recording memory employing the same
02/04/2014US8644057 Magnetic memory and magnetic memory apparatus
02/04/2014US8644056 Magnetic random access memory apparatus, methods for programming and verifying reference cells therefor
02/04/2014US8644055 Nonvolatile memory with enhanced efficiency to address asymetric NVM cells
02/04/2014US8644053 Resistor thin film MTP memory
02/04/2014US8644052 Phase change memory adaptive programming
02/04/2014US8644051 Semiconductor memory device and control method of the same
02/04/2014US8644050 Data retention of ferroelectric films by controlling film composition and strain gradient for probe-based devices
02/04/2014US8643130 Magnetic stack and memory cell comprising such a stack
01/2014
01/30/2014WO2014018920A1 Amorphous alloy spacer for perpendicular mtjs
01/30/2014WO2011150177A8 Methods and devices to reduce outer code failure rate variability
01/30/2014US20140032830 Memory Component with Pattern Register Circuitry to Provide Data Patterns for Calibration
01/30/2014US20140030553 Magneto-electronic component, and method for the production thereof
01/30/2014US20140029367 Refresh address generator, volatile memory device including the same and method of refreshing the volatile memory device
01/30/2014US20140029354 Non-volatile memory cell with high bit density
01/30/2014US20140029337 Semiconductor memory device which stores plural data in a cell
01/30/2014US20140029334 Magnetic field sensing using magnetoresistive random access memory (mram) cells
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