Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2014
01/30/2014US20140029333 Five transistor sram cell
01/30/2014US20140029332 Use of hydrocarbon nanorings for data storage
01/30/2014US20140029331 Memory device with multi-mode deserializer
01/30/2014US20140029328 Storing Data in a Non-volatile Latch
01/30/2014US20140029327 Bipolar resistive switch heat mitigation
01/30/2014US20140029326 Ferroelectric random access memory with a non-destructive read
01/30/2014DE112012001962T5 Magnonische magnetische Speichereinheit mit wahlfreiem Zugriff Magnonische magnetic random access memory unit
01/29/2014EP2689422A1 Logical memory architecture, in particular for mram, pcram, or rram
01/29/2014EP2689421A1 Device consisting of various thin films and use of such a device
01/29/2014EP2689312A2 Phased-array charge pump supply
01/29/2014EP2364497B1 Non-volatile state retention latches
01/29/2014EP1866929B1 Compensating for coupling during read operations of non-volatile-memory
01/29/2014CN103548085A Conditional programming of multibit memory cells
01/29/2014CN103544990A Static random access memory apparatus and bit-line voltage controller thereof
01/29/2014CN103544989A 半导体存储器器件 The semiconductor memory device
01/29/2014CN103544988A Semiconductor memory device controlling refresh period, memory system and operating method thereof
01/29/2014CN103544987A Semiconductor memory element with self-refreshing sequence circuit
01/29/2014CN103544986A Design method of low-power-consumption 8-pipe SRAM (static random access memory) chip based on electric charge recycle and bit line classification
01/29/2014CN103544985A Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
01/29/2014CN103544984A Magnetic random access memory
01/29/2014CN103544983A An improved high capacity low cost multi-state magnetic memory
01/29/2014CN103544982A An improved high capacity low cost multi-state magnetic memory
01/29/2014CN101686051B Apparatus and method for testing setup/hold time
01/29/2014CN101523504B Solid state storage element and method
01/28/2014US8638621 Semiconductor memory device having a hierarchical bit line scheme
01/28/2014US8638615 Semiconductor storage device, host controlling the same, and memory system including the semiconductor storage device and the host
01/28/2014US8638612 Automatic selective slow program convergence
01/28/2014US8638610 Semiconductor storage device
01/28/2014US8638609 Partial local self boosting for NAND
01/28/2014US8638608 Selected word line dependent select gate voltage during program
01/28/2014US8638607 Disturb verify for programming memory cells
01/28/2014US8638606 Substrate bias during program of non-volatile storage
01/28/2014US8638605 Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
01/28/2014US8638603 Data storage system having multi-level memory device and operating method thereof
01/28/2014US8638602 Background selection of voltage reference values for performing memory read operations
01/28/2014US8638601 Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces
01/28/2014US8638599 Semiconductor storage device
01/28/2014US8638598 Multi-bit resistance measurement
01/28/2014US8638597 Bit line charge accumulation sensing for resistive changing memory
01/28/2014US8638596 Non-volatile memory saving cell information in a non-volatile memory array
01/28/2014US8638595 Global bit select circuit with write around capability
01/28/2014US8638594 Integrated circuits with asymmetric transistors
01/28/2014US8638593 Semiconductor device
01/28/2014US8638592 Dual port static random access memory cell
01/28/2014US8638591 TFET based 4T memory devices
01/28/2014US8638590 Resistance based memory having two-diode access device
01/28/2014US8637947 Memory element and memory apparatus
01/28/2014US8637870 Three-dimensional memory device incorporating segmented array line memory array
01/28/2014US8637413 Nonvolatile resistive memory element with a passivated switching layer
01/28/2014US8637366 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
01/28/2014CA2719700C Array structural design of magnetoresistive random access memory (mram) bit cells
01/23/2014WO2014014654A1 Memory system with unverified program step
01/23/2014WO2014012624A1 Spintronic circuit and method of operation therefore
01/23/2014WO2013170214A3 Resistive devices and methods of operation thereof
01/23/2014US20140022840 Non-volatile programmable switch
01/23/2014US20140022839 Method and system for providing magnetic junctions having improved characteristics
01/23/2014US20140022838 Magnentic resistance memory apparatus having multi levels and method of driving the same
01/23/2014US20140022837 Random bit generator with magnetic tunnel junction
01/23/2014US20140022836 Semiconductor memory device having resistive memory cells and method of testing the same
01/23/2014US20140022835 Controlling the voltage level on the word line to maintain performance and reduce access disturbs
01/23/2014DE102007012177B4 Speichervorrichtung, System mit einer Speichervorrichtung sowie Verfahren zum Bestimmen einer Temperatur einer Speichervorrichtung Storage device system having a memory device and method for determining a temperature of a memory device
01/23/2014DE10164917B4 Halbleiterspeichersystem A semiconductor memory system
01/22/2014EP2688103A1 MRAM cell and device with improved field line for reduced power consumption
01/22/2014EP2688072A1 Spintronic circuit and method of operation therefore
01/22/2014CN103531708A Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces
01/22/2014CN103531238A Flash multi-level threshold distribution scheme
01/22/2014CN103531235A Sense amplifier circuitry for resistive type memory
01/22/2014CN103531229A Static random access memory
01/22/2014CN103531228A Read path selection and control circuit for RAM with configurable bit width
01/22/2014CN103531227A Memory architecture with a current controller and reduced power requirements and method thereof
01/22/2014CN102124526B Magnetic racetrack memory device
01/22/2014CN101345080B Oscillation device, method of oscillation, and memory device
01/21/2014US8635393 Semiconductor memory having a short effective word line cycle time and method for reading data from a semiconductor memory of this type
01/21/2014US8634452 Multiphase receiver with equalization circuitry
01/21/2014US8634252 Methods of operating a memory device having a buried boosting plate
01/21/2014US8634251 Program method of semiconductor memory device
01/21/2014US8634250 Methods and apparatus for programming multiple program values per signal level in flash memories
01/21/2014US8634246 Nonvolatile memory device, operating method thereof and memory system including the same
01/21/2014US8634245 Control circuit of read operation for semiconductor memory apparatus
01/21/2014US8634243 Data writing method and data storage device
01/21/2014US8634239 Hybrid multi-level cell programming sequences
01/21/2014US8634238 Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof
01/21/2014US8634237 Magnetic memory device
01/21/2014US8634236 Phase change memory device, storage system having the same and fabricating method thereof
01/21/2014US8634235 Phase change memory coding
01/21/2014US8634234 Embedded magnetic random access memory (MRAM)
01/21/2014US8634233 Systems and methods for direct communication between magnetic tunnel junctions
01/21/2014US8634232 Write driver circuit for MRAM, MRAM and layout structure thereof
01/21/2014US8634231 Magnetic tunnel junction structure
01/21/2014US8634230 Semiconductor device and method for driving the same
01/21/2014US8634229 Dynamic memory cell provided with a field-effect transistor having zero swing
01/21/2014US8634228 Driving method of semiconductor device
01/21/2014US8634227 Resistive memory device having voltage level equalizer
01/21/2014US8634226 Immunity of phase change material to disturb in the amorphous phase
01/21/2014US8634225 Method and apparatus managing worn cells in resistive memories
01/21/2014US8634224 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
01/21/2014US8634223 Magnetic memory with asymmetric energy barrier
01/21/2014US8634170 Semiconductor integrated circuit
01/21/2014US8633555 Magnetic sensor
01/16/2014WO2014011627A1 Programming method to tighten threshold voltage width with avoiding program disturb
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