Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2011
03/10/2011US20110058409 Mram diode array and access method
03/10/2011US20110058408 Memory cell arrangements; memory cell reader; method for determining a memory cell storage state
03/10/2011US20110058407 Semiconductor storage device
03/10/2011US20110058406 Resistive memory
03/10/2011US20110058405 Memory Cell With Proportional Current Self-Reference Sensing
03/10/2011US20110058404 Variable resistive memory punchthrough access method
03/10/2011US20110058403 Ferro-electric random access memory apparatus
03/09/2011EP2293448A2 Method and apparatus for an N-nary logic circuit
03/09/2011EP2293305A1 Memory device refreshed by force and method
03/09/2011EP2293196A1 Non-volatile memory and method with non-sequential update block management
03/09/2011EP1563509B1 Spin driven resistors and nanogates
03/09/2011CN101546808B Magnetoresistance effect element and magnetic random access memory
03/09/2011CN101504967B Heating center PCRAM structure and methods for making
03/09/2011CN101335045B Write circuit of phase-change memory
03/08/2011US7903488 Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device
03/08/2011US7903487 Semiconductor memory device, and method of controlling the same
03/08/2011US7903479 Semiconductor memory device
03/08/2011US7903472 Operating method of non-volatile memory
03/08/2011US7903470 Integrated circuits and discharge circuits
03/08/2011US7903457 Multiple phase change materials in an integrated circuit for system on a chip application
03/08/2011US7903456 Superconducting circuit for high-speed lookup table
03/08/2011US7903455 Magnetic memory device
03/08/2011US7903454 Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit
03/08/2011US7903453 Magnetic memory
03/08/2011US7903452 Magnetoresistive memory cell
03/08/2011US7903451 Storage apparatus including non-volatile SRAM
03/08/2011US7903450 Asymmetrical memory cells and memories using the cells
03/08/2011US7903449 Semiconductor memory device
03/08/2011US7903448 Resistance random access memory having common source line
03/08/2011US7903447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
03/08/2011US7903446 Semiconductor memory device
03/08/2011US7902579 Magnetic memory devices using magnetic domain dragging
03/08/2011US7901048 Inkjet printhead with thermal actuator coil
03/08/2011US7901047 Micro-electromechanical nozzle arrangement with an actuating mechanism having a shutter member
03/08/2011US7901041 Nozzle arrangement with an actuator having iris vanes
03/03/2011WO2011025731A1 Partial speed and full speed programming for non-volatile memory using floating bit lines
03/03/2011WO2011024022A1 Preloading data into a flash storage device
03/03/2011WO2010137819A3 Device and method for achieving sram output characteristics from drams
03/03/2011US20110055670 Programming Method and Memory Device Using the Same
03/03/2011US20110055486 Resistive memory devices and related methods of operation
03/03/2011US20110055429 Storage system that is connected to external storage
03/03/2011US20110051540 Method and structure for SRAM cell trip voltage measurement
03/03/2011US20110051539 Method and structure for SRAM VMIN/VMAX measurement
03/03/2011US20110051530 Semiconductor memory device and method of updating data stored in the semiconductor memory device
03/03/2011US20110051526 Method for programming a memory structure
03/03/2011US20110051525 Power saving method and circuit thereof for a semiconductor memory
03/03/2011US20110051511 Digital filters with memory
03/03/2011US20110051509 System and Method to Manufacture Magnetic Random Access Memory
03/03/2011US20110051508 Multilevel programming of phase change memory
03/03/2011US20110051507 Maintenance process to enhance memory endurance
03/03/2011US20110051506 Flexible multi-pulse set operation for phase-change memories
03/03/2011US20110051505 Reducing programming time of a memory cell
03/03/2011US20110051504 Creating short program pulses in asymmetric memory arrays
03/03/2011US20110051503 Magnetic Devices and Structures
03/03/2011US20110051502 Flexible Word-Line Pulsing For STT-MRAM
03/03/2011US20110051501 Memory control with selective retention
03/03/2011US20110051500 Nonvolatile memory element and nonvolatile memory device
03/03/2011US20110051499 Method for adjusting a resistive change element using a reference
03/03/2011US20110051498 Semiconductor memory device
03/03/2011US20110051497 Method of measuring a resistance of a resistive memory device
03/03/2011US20110051496 Resistive Random Access Memory and the Method of Operating the Same
03/03/2011US20110051495 Nonvolatile semiconductor memory device with no decrease in read margin and method of reading the same
03/03/2011US20110051494 Memory having tunnel barrier and method for writing and reading information to and from this memory
03/03/2011US20110051493 Nonvolatile semiconductor memory device
03/03/2011US20110051492 Resistance change memory device
03/03/2011US20110051491 Ferroelectric random access memory and memory system
03/03/2011US20110051490 Array architecture and operation for magnetic racetrack memory
03/03/2011US20110051486 Content addressable memory reference clock
03/03/2011US20110051485 Content addressable memory array writing
03/03/2011US20110051483 Content addressable memory array
03/03/2011US20110051482 Content addressable memory array programmed to perform logic operations
03/03/2011US20110050961 Image processing method using sensed eye position
03/03/2011US20110050807 Inkjet printhead having selectively actuable nozzles arranged in nozzle pairs
03/02/2011EP2290658A1 Power-saving reading of magnetic memory devices
03/02/2011EP2290657A1 Method and apparatus for crossing clock domain boundaries
03/02/2011EP2290551A2 Protocol for communication with dynamic memory
03/02/2011EP2290550A2 Protocol for communication with dynamic memory
03/02/2011EP2290549A2 Protocol for communication with dynamic memory
03/02/2011EP2289102A1 Shared line magnetic random access memory cells
03/02/2011EP2289070A1 High speed sense amplifier array and method for nonvolatile memory
03/02/2011EP2289069A1 Nonvolatile memory and method with index programming and reduced verify
03/02/2011CN101982894A Magnetic domain data storage devices manufacturing method
03/02/2011CN101419940B Method for making memory cell assembly and the memory cell assembly
03/01/2011US7898897 Circuit and method for generating word line off voltage
03/01/2011US7898894 Static random access memory (SRAM) cells
03/01/2011US7898872 Operating method used in read or verification method of nonvolatile memory device
03/01/2011US7898869 Word line voltage generator and flash memory device including the same, and method of generating word line voltage thereof
03/01/2011US7898868 Multi-state memory
03/01/2011US7898863 Method, apparatus, and system for improved read operation in memory
03/01/2011US7898858 Memory module
03/01/2011US7898856 Memory cell heights
03/01/2011US7898851 Semiconductor memory device which includes memory cell having charge accumulation layer and control gate
03/01/2011US7898850 Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells
03/01/2011US7898849 Compound cell spin-torque magnetic random access memory
03/01/2011US7898848 Memory including bipolar junction transistor select devices
03/01/2011US7898847 Method to prevent overreset
03/01/2011US7898846 Magnetoresistive element
03/01/2011US7898845 Resistance change memory
03/01/2011US7898844 Magnetic tunnel junction and memristor apparatus
03/01/2011US7898843 Methods and apparatus for read/write control and bit selection with false read suppression in an SRAM