Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2010
11/23/2010US7839669 Semiconductor memory device
11/23/2010US7838862 Phase random access memory with high density
11/23/2010US7837115 Camera unit configured to distort captured images
11/18/2010WO2010132773A1 Magnetic tunnel junction device and fabrication
11/18/2010WO2010132600A2 Embedded magnetic random access memory (mram)
11/18/2010WO2010132178A2 Method to calibrate start values for write leveling in a memory system
11/18/2010WO2010130240A1 Magnetoelectronic components and measurement method
11/18/2010US20100293350 Method of operating an integrated circuit, integrated circuit and memory module
11/18/2010US20100290284 Single-Transistor EEPROM Array and Operation Methods
11/18/2010US20100290281 Method for recording of information in magnetic recording element and method for recording of information in magnetic random access memory
11/18/2010US20100290280 Semiconductor memory device
11/18/2010US20100290279 Semiconductor Memory Device and Method for Operating the Same
11/18/2010US20100290278 Semiconductor memory device rewriting data after execution of multiple read operations
11/18/2010US20100290277 Resistive memory cell accessed using two bit lines
11/18/2010US20100290276 Semiconductor memory using resistance material
11/18/2010US20100290275 Phase change memory apparatus
11/18/2010US20100290274 Nonvolatile memory device
11/18/2010US20100290273 Nonvolatile Memory Device
11/18/2010US20100290272 Phase Change Memory Device
11/18/2010US20100290271 One-transistor, one-resistor, one-capacitor phase change memory
11/18/2010US20100290270 Magnetic memory element, magnetic memory having said magnetic memory element, and method for driving magnetic memory
11/18/2010US20100290269 Static random access memory
11/18/2010US20100290268 Memory cell, pair of memory cells, and memory array
11/18/2010US20100290267 Semiconductor storage device
11/18/2010US20100290266 Command processing circuit and phase change memory device using the same
11/18/2010US20100290265 Polymer-based ferroelectric memory
11/18/2010US20100290264 Optoelectronic memory devices
11/18/2010US20100289522 Signal transmitting device suited to fast signal transmission
11/18/2010US20100288996 Memory arrays including memory levels that share conductors, and methods of forming such memory arrays
11/18/2010DE102009021400A1 Magnetoelektronische Bauelemente und Messverfahren Magneto Electronic Components and methods of measurement
11/17/2010CN201638573U Multi-chip module with function of master-slave analog signal transmission
11/17/2010CN1921004B Magnetic memory device and method of fabricating the same
11/17/2010CN1751358B Apparatus and method for encoding auto-precharge
11/17/2010CN101888236A Semiconductor integrated-circuit device
11/17/2010CN101887903A Phase change memory with transistor, resistor and capacitor and operating method thereof
11/17/2010CN101887758A Emulation verification method of nonvolatile memory
11/17/2010CN101887753A Heterogeneous storage system and cache optimization method thereof
11/17/2010CN101887749A Storage device and operating method thereof
11/17/2010CN101887747A Phase change memory apparatus
11/17/2010CN101887746A Semiconductor memory device and method for operating the same
11/17/2010CN101887745A Semiconductor memory device
11/17/2010CN101887097A Self-test circuit of chip of audio-visual multimedia system
11/17/2010CN101887089A Circuit apparatus including removable bond pad extension
11/17/2010CN101299453B Nano composite phase-changing material and preparation method thereof
11/17/2010CN101290972B Erasable and readable thin film type resistor switching device and preparing method thereof
11/17/2010CN101232076B Method for eliminating CuxO resistance memory formation voltage
11/16/2010US7836374 Memory controller method and system compensating for memory cell data losses
11/16/2010US7835190 Methods of erase verification for a flash memory device
11/16/2010US7835187 Boosting seed voltage for a memory device
11/16/2010US7835186 Method of programming a selected memory cell
11/16/2010US7835185 Nonvolatile semiconductor memory device
11/16/2010US7835184 EEPROM memory cell with first-dopant-type control gate transister, and second-dopant type program/erase and access transistors formed in common well
11/16/2010US7835182 Non-volatile semiconductor memory device and method of writing data in non-volatile semiconductor memory devices
11/16/2010US7835181 Semiconductor memory device
11/16/2010US7835180 Semiconductor memory device
11/16/2010US7835179 Non-volatile latch with low voltage operation
11/16/2010US7835177 Phase change memory cell and method of fabricating
11/16/2010US7835176 Implementing enhanced dual mode SRAM performance screen ring oscillator
11/16/2010US7835175 Static random access memories and access methods thereof
11/16/2010US7835174 Non-volatile memory device and method of reading data therefrom
11/16/2010US7835173 Resistive memory
11/16/2010US7835172 System and method of operation for resistive change memory
11/16/2010US7835171 Semiconductor memory device
11/16/2010US7835170 Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
11/16/2010US7835169 Semiconductor memory device and semiconductor memory system
11/16/2010US7835168 Asymmetric dipolar ring
11/16/2010US7835167 Magnetic domain data storage devices and methods of operating the same
11/16/2010US7834676 Method and apparatus for accounting for changes in transistor characteristics
11/16/2010US7834420 Semiconductor integrated circuit device and process for manufacturing the same
11/16/2010US7834410 Spin torque transfer magnetic tunnel junction structure
11/16/2010US7834392 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
11/16/2010US7834386 Non-volatile memory with epitaxial regions for limiting cross coupling between floating gates
11/16/2010US7833823 Programmable resistance memory element and method for making same
11/16/2010US7832837 Print assembly and printer having wide printing zone
11/11/2010WO2010129040A1 Single bit line smt mram array architecture and the programming method
11/11/2010WO2010128615A1 Storage element and storage method
11/11/2010WO2010101860A3 Reducing source loading effect in spin torque transfer magnetoresitive random access memory (stt-mram)
11/11/2010US20100284218 Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
11/11/2010US20100284217 Magnetic memory element, driving method for the same, and nonvolatile storage device
11/11/2010US20100284216 Information storage devices using magnetic domain wall movement and methods of operating the same
11/11/2010US20100284215 Magnetic memory with a thermally assisted writing procedure and reduced writing field
11/11/2010US20100284214 Electronically scannable multiplexing device
11/11/2010US20100284213 Method of cross-point memory programming and related devices
11/11/2010US20100284212 Method for multilevel programming of phase change cells using adaptive reset pulses
11/11/2010US20100284211 Multilevel Nonvolatile Memory via Dual Polarity Programming
11/11/2010DE10233642B4 Fehlerkorrektur-Kodierung und -Dekodierung in einer Festkörper-Speicherungsvorrichtung Error correction encoding and decoding in a solid state storage device
11/11/2010DE102004025975B4 Phasenänderungsspeicherbauelement und Programmierverfahren Phase change memory device and programming method
11/11/2010DE10084440B4 Dynamische inhaltsadressierbare Speicherzelle Dynamic content addressable memory cell
11/10/2010EP2249356A1 Spin injection device, magnetic apparatus using the same, and magnetic thin film used for them
11/10/2010EP2249351A1 Method for multilevel programming of phase change memory cells using a percolation algorithm
11/10/2010EP2249350A1 Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current
11/10/2010EP2249349A1 Magnetic memory with a thermally assisted writing procedure and reduced writng field
11/10/2010EP2248132A2 Charge loss compensation during programming of a memory device
11/10/2010EP2002442B1 Flash memory system control scheme
11/10/2010CN101884071A Bank sharing and refresh in a shared multi-port memory device
11/10/2010CN101882627A Phase change memory device and manufacturing method thereof
11/10/2010CN101882464A Memory device control for self-refresh mode
11/10/2010CN101882463A Multiposition ferroelectric memory and voltage application method thereof
11/10/2010CN101882462A Setting operation method of resistance random access memory
11/10/2010CN101238520B MRAM embedded smart power integrated circuits
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