Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2010
12/14/2010US7852669 Division-based sensing and partitioning of electronic memory
12/14/2010US7852668 Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell
12/14/2010US7852667 ST-RAM employing a magnetic resonant tunneling diode as a spacer layer
12/14/2010US7852666 Nonvolatile memory using resistance material
12/14/2010US7852665 Memory cell with proportional current self-reference sensing
12/14/2010US7852664 Magnetic memory cell structure with thermal assistant and magnetic dynamic random access memory
12/14/2010US7852663 Nonvolatile programmable logic gates and adders
12/14/2010US7852662 Spin-torque MRAM: spin-RAM, array
12/14/2010US7852661 Write-assist SRAM cell
12/14/2010US7852660 Enhancing read and write sense margins in a resistive sense element
12/14/2010US7852659 Time efficient phase change memory data storage device
12/14/2010US7852658 Phase change memory cell with constriction structure
12/14/2010US7852657 Multiple write configurations for a memory cell
12/14/2010US7851878 Magnetic memory device and method of fabricating the same
12/14/2010US7850282 Nozzle arrangement for an inkjet printhead having dynamic and static structures to facilitate ink ejection
12/14/2010US7849712 Reading a phase change memory
12/09/2010WO2010141189A1 Folding data stored in binary format into multi-state format within non-volatile memory devices
12/09/2010WO2010140615A1 Semiconductor storage device
12/09/2010US20100309741 Semiconductor device
12/09/2010US20100309736 Sram with read and write assist
12/09/2010US20100309724 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
12/09/2010US20100309718 Semiconductor memory device
12/09/2010US20100309717 Non-volatile multi-bit memory with programmable capacitance
12/09/2010US20100309716 Supply voltage generating circuit and semiconductor device having same
12/09/2010US20100309715 Stable current supply circuit irrespective of pvt variations and semiconductor having same
12/09/2010US20100309714 Methods, structures, and devices for reducing operational energy in phase change memory
12/09/2010US20100309713 Magnetic random access memory
12/09/2010US20100309712 Magnetic random access memory
12/09/2010US20100309711 F-RAM Device with Current Mirror Sense Amp
12/09/2010US20100309710 Variable Impedance Circuit Controlled by a Ferroelectric Capacitor
12/09/2010US20100309261 Ejection nozzle assembly
12/09/2010US20100309252 Ejection nozzle arrangement
12/09/2010US20100308417 Semiconductor memory device
12/09/2010DE10254155B4 Maskenprogrammierbares ROM-Bauelement Mask programmable ROM device
12/09/2010DE102004031385B4 Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung Process for the preparation of fin field-effect transistors in a DRAM memory cell array, field effect transistors and having a curved channel DRAM memory cell arrangement
12/08/2010EP2259267A1 Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof
12/08/2010EP2257881A2 Memory device with network on chip methods, apparatus, and systems
12/08/2010EP2076905B1 Concurrent reading of status registers
12/08/2010EP1815479B1 Method and system for minimizing impact of refresh operations on volatile memory performance
12/08/2010EP1695352B1 Method and apparatus to improve memory performance
12/08/2010CN1941181B Semiconductor memory device
12/08/2010CN1930632B Available verification for coarse/fine programming of non-volatile memory
12/08/2010CN1700356B Semiconductor memory
12/08/2010CN1677559B Magnetic-resistance random access memory and integrated circuit assembly
12/08/2010CN101911204A Memory cell, and memory device
12/08/2010CN101911203A System and method of selectively applying negative voltage to wordlines during memory device read operation
12/08/2010CN101908375A Content addressable memory
12/08/2010CN101908374A Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory
12/08/2010CN101908373A Resistance conversion memory with read-voltage bias NMOS (N-channel Metal-Oxide Semiconductor) transistor
12/08/2010CN101908372A Semiconductor memory device
12/08/2010CN101908371A Gain cell eDRAM for programmable logic device
12/08/2010CN101908370A Memory and gain unit eDRAM (embedded Dynamic Random Access Memory) unit combined by bit lines
12/08/2010CN101908369A Semiconductor memory device
12/08/2010CN101908368A Electronic storage device and operation method thereof
12/08/2010CN101908362A Storage device
12/08/2010CN101587499B Multi-channel signal acquiring system based on NAND
12/08/2010CN101582290B Multi-port memory based on dram core and control method thereof
12/08/2010CN101425330B Refreshing control module for synchronous dynamic memory
12/08/2010CN101404178B Memory device and memory reading method
12/08/2010CN101377952B Method and apparatus for reading and writing SRAM data
12/08/2010CN101369627B Solid state electrolyte memory element and manufacturing method thereof
12/08/2010CN101329897B Method of programming a magnetic memory element
12/08/2010CN101232038B Structure of high-density phase transition memory and process of preparation thereof
12/08/2010CN101211959B Phase-change memory and fabrication method thereof
12/08/2010CN101156129B Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data I/O bus
12/08/2010CN101106171B Non-volatile memory device including variable resistance material
12/08/2010CN101000930B Semiconductor element, semiconductor memory device, its manufacture and data reading/writing method
12/07/2010US7848176 Semiconductor memory device
12/07/2010US7848163 Semiconductor memory device and method for driving the same
12/07/2010US7848159 Non-volatile memory systems and methods including page read and/or configuration features
12/07/2010US7848155 Non-volatile memory system including spare array and method of erasing a block in the same
12/07/2010US7848154 Nonvolatile memory device
12/07/2010US7848151 Circuit to control voltage ramp rate
12/07/2010US7848150 Flash memory device and method of operating the same
12/07/2010US7848149 Reducing the effects of noise in non-volatile memories through multiple reads
12/07/2010US7848148 One-transistor cell semiconductor on insulator random access memory
12/07/2010US7848144 Reverse order page writing in flash memories
12/07/2010US7848141 Multi-level cell copyback program method in a non-volatile memory device
12/07/2010US7848139 Memory device structures including phase-change storage cells
12/07/2010US7848138 Biasing a phase change memory device
12/07/2010US7848137 MRAM and data read/write method for MRAM
12/07/2010US7848136 Magnetic memory
12/07/2010US7848135 Piezo-driven non-volatile memory cell with hysteretic resistance
12/07/2010US7848134 FB DRAM memory with state memory
12/07/2010US7848133 Phase change memory with bipolar junction transistor select device
12/07/2010US7848132 FRAM including a tunable gain amp as a local sense amp
12/07/2010US7848131 High speed ferroelectric random access memory
12/07/2010US7847836 Image processing method using sensed eye position
12/07/2010US7847598 Sense amplifier and electronic apparatus using the same
12/07/2010US7847344 Memory utilizing oxide-nitride nanolaminates
12/07/2010US7847330 Four vertically stacked memory layers in a non-volatile re-writeable memory device
12/07/2010US7847222 Heater and memory cell, memory device and recording head including the heater
12/07/2010US7845869 Computer keyboard with internal printer
12/07/2010US7845764 Inkjet printhead having nozzle arrangements with actuator pivot anchors
12/02/2010WO2010138860A1 Spin transfer torque - magnetic tunnel junction device and method of operation
12/02/2010WO2010138219A1 Nand flash memory with integrated bit line capacitance
12/02/2010WO2010138160A1 Disturbance-free reading of smt mram reference cell pair
12/02/2010WO2010137819A2 Device and method for achieving sram output characteristics from drams
12/02/2010WO2010137573A1 Non-volatile cam
12/02/2010WO2010137198A1 Semiconductor memory device
1 ... 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 ... 761