Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2010
12/23/2010US20100321991 Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State
12/23/2010US20100321990 Memory Including Vertical Bipolar Select Device and Resistive Memory Element
12/23/2010US20100321989 Fusion memory device embodied with phase change memory devices having different resistance distributions and data processing system using the same
12/23/2010US20100321988 Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array
12/23/2010US20100321987 Memory device and method for sensing and fixing margin cells
12/23/2010US20100321986 Multi-bit stram memory cells
12/23/2010US20100321985 Boosted gate voltage programming for spin-torque MRAM array
12/23/2010US20100321984 Configuration random access memory
12/23/2010US20100321983 Semiconductor memory device capable of driving non-selected word lines to first and second potentials
12/23/2010US20100321982 Nonvolatile storage device and method for writing into the same
12/23/2010US20100321981 Variable resistance memory devices compensating for word line resistance
12/23/2010US20100321980 Semiconductor memory device
12/23/2010US20100321979 Resistance change memory
12/23/2010US20100321978 Semiconductor memory device and memory cell voltage application method
12/23/2010US20100321977 Programming reversible resistance switching elements
12/23/2010US20100321976 Split Path Sensing Circuit
12/23/2010US20100321975 Ferroelectric memory device
12/23/2010US20100321974 Magnetic shift register and reading method
12/22/2010EP2264893A1 Logic circuit
12/22/2010EP2264740A1 DRAM cell with magnetic capacitor
12/22/2010EP2264725A1 Spin injection device, magnetic apparatus using the same, and magnetic thin film used for them
12/22/2010EP2264713A1 Fast remanent resistive ferroelectric memory
12/22/2010EP2263236A1 Method of forming a magnetic tunnel junction device
12/22/2010EP2263154A2 Analog read and write paths in a solid state memory device
12/22/2010EP2077558B1 Predictive timing calibration for memory devices
12/22/2010EP1994489B1 Method of reducing electro-static discharge (esd) from conductors on insulators
12/22/2010EP1929525B1 Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
12/22/2010EP1461862B1 Active termination circuit and method for controlling the impedance of external integrated circuit terminals
12/22/2010CN201681627U Symmetrical SDRAM extension structure
12/22/2010CN201681626U Stackable SDRAM expanding structure
12/22/2010CN1890753B Method and apparatus for multiple row caches per bank
12/22/2010CN1707694B Memory controller for use in multi-thread pipeline bus system and memory control method
12/22/2010CN1345091B Semiconductor storage using tunnel magneto-resistance effect and manufacture thereof
12/22/2010CN101925962A 半导体存储器 Semiconductor memory
12/22/2010CN101925961A MRAM device with shared source line
12/22/2010CN101925960A Magnetic tunnel junction device with separate read and write paths
12/22/2010CN101924550A Lookup table using gain unit eDRAMs
12/22/2010CN101924118A Controlling the circuitry and memory array relative height in a phase change memory feol process flow
12/22/2010CN101924068A Resistance storage and manufacturing method of integrated circuit comprising same
12/22/2010CN101923895A Phase change memory device having multi-level and method of driving the same
12/22/2010CN101923894A Method for low power accessing a phase change memory device
12/22/2010CN101923893A Static random access memory array
12/22/2010CN101923892A Stable SRAW cell
12/22/2010CN101923891A Temperature detection circuit of semiconductor memory apparatus
12/22/2010CN101923890A Gain unit eDRAM for programmable logic device
12/22/2010CN101923889A Memory device and memory
12/22/2010CN101923658A Use of gamma hardened RFID tags in pharmaceutical devices
12/22/2010CN101478029B EPIR effect resistor type non-volatile random memory material, preparation and use thereof
12/22/2010CN101252144B 存储器件和存储器 Memory devices and memory
12/22/2010CN101038788B Semiconductor integrated circuit and leak current reducing method
12/21/2010US7855923 Write current compensation using word line boosting circuitry
12/21/2010US7855920 Semiconductor memory device having a floating storage bulk region capable of holding/emitting excessive majority carriers
12/21/2010US7855919 Non-volatile memory and semiconductor device
12/21/2010US7855916 Nonvolatile memory systems with embedded fast read and write memories
12/21/2010US7855914 Semiconductor memory device capable of suppressing peak current
12/21/2010US7855912 Circuit and method for multiple-level programming, reading, and erasing dual-sided nonvolatile memory cell
12/21/2010US7855911 Reconfigurable magnetic logic device using spin torque
12/21/2010US7855910 Electric element, memory device, and semiconductor integrated circuit
12/21/2010US7855909 Calibrating page borders in a phase-change memory
12/21/2010US7855860 Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device
12/21/2010US7855583 Sense amplifier for low voltage high speed sensing
12/21/2010US7855341 Methods and apparatus for a flexible circuit interposer
12/21/2010US7855085 System and method for reducing shorting in memory cells
12/21/2010US7854504 Digital device incorporating inkjet printhead and platen
12/16/2010WO2010144836A1 Magnetic tunnel junction device and fabrication
12/16/2010WO2010143707A1 Method for regulating voltage characteristics of a latch circuit, method for regulating voltage characteristics of a semiconductor device, and regulator of voltage characteristics of a latch circuit
12/16/2010WO2010143248A1 Tunnel magnetic resistance effect element and random access memory using same
12/16/2010WO2010142762A1 Ferroelectric device with adjustable resistance
12/16/2010US20100315895 Semiconductor device
12/16/2010US20100315874 Use of emerging non-volatile memory elements with flash memory
12/16/2010US20100315872 Multilevel Cell Memory Devices Having Reference Point Cells
12/16/2010US20100315871 Dynamic data restore in thyristor-based memory device
12/16/2010US20100315870 Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (mtj)
12/16/2010US20100315869 Spin torque transfer MRAM design with low switching current
12/16/2010US20100315868 Semiconductor device including storage device and method for driving the same
12/16/2010US20100315867 Solid-state memory device, data processing system, and data processing device
12/16/2010US20100315866 Phase change memory device having multi-level and method of driving the same
12/16/2010US20100315865 Diode assisted switching spin-transfer torque memory unit
12/16/2010US20100315864 Magnetoresistive element and magnetic memory
12/16/2010US20100315863 Magnetic Tunnel Junction Device and Fabrication
12/16/2010US20100315862 Stable SRAM Cell
12/16/2010US20100315861 Sram cell and sram device
12/16/2010US20100315860 Integrated circuit with a memory matrix with a delay monitoring column
12/16/2010US20100315859 Eight-Transistor SRAM Memory with Shared Bit-Lines
12/16/2010US20100315858 Memory architecture with a current controller and reduced power requirements
12/16/2010US20100315857 Resistance change memory
12/16/2010US20100315516 Camera unit incoporating program script scanner
12/16/2010DE19806999B4 Halbleiterspeicherelement A semiconductor memory element
12/15/2010EP2075706B1 Memory device and refresh adjusting method
12/15/2010CN1624803B 半导体集成电路装置 The semiconductor integrated circuit device
12/15/2010CN101916587A Device capable of realizing spin dynamic storage
12/15/2010CN101267017B A tube phase change memory unit structure and its making method
12/15/2010CN101266831B Memory device and memory
12/15/2010CN101145597B Memory device using magnetic domain wall moving
12/15/2010CN101118922B CuxO resistor memory with upper electrode as protective layer and manufacturing method therefor
12/14/2010US7852681 Non-volatile one time programmable memory
12/14/2010US7852678 Non-volatile memory with improved sensing by reducing source line current
12/14/2010US7852674 Dynamic cell bit resolution
12/14/2010US7852673 Method for operating nonvolatitle memory array
12/14/2010US7852671 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
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