Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2011
01/04/2011US7864568 Semiconductor storage device
01/04/2011US7864567 Programming a normally single phase chalcogenide material for use as a memory of FPLA
01/04/2011US7864566 Phase change memory programming method without reset over-write
01/04/2011US7864565 Data retention monitor
01/04/2011US7864564 Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
01/04/2011US7864563 Magnetic random access memory
01/04/2011US7864562 Integrated circuit memory access mechanisms
01/04/2011US7864561 Cell structure with buried capacitor for soft error rate improvement
01/04/2011US7864560 Nano-electronic array
01/04/2011US7864559 Dram memory device with improved refresh characteristic
01/04/2011US7864558 Method for nondestructively reading information in ferroelectric memory elements
01/04/2011US7863947 Driving strength control circuit and data output circuit in semiconductor device
01/04/2011CA2377671C High density non-volatile memory device
12/2010
12/30/2010US20100332719 Memory Write Signaling and Methods Thereof
12/30/2010US20100329051 Method and apparatus for synchronization of row and column access operations
12/30/2010US20100329044 Assisting write operations to data storage cells
12/30/2010US20100329001 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween
12/30/2010US20100329000 Non-volatile memory
12/30/2010US20100328999 Memory and data processing method
12/30/2010US20100328998 Memory and write control method
12/30/2010US20100328997 Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
12/30/2010US20100328996 Phase change memory having one or more non-constant doping profiles
12/30/2010US20100328995 Methods and apparatus for reducing defect bits in phase change memory
12/30/2010US20100328994 Phase change memory with finite annular conductive path
12/30/2010US20100328993 Recording method of nonvolatile memory and nonvolatile memory
12/30/2010US20100328992 Memory
12/30/2010US20100328991 Semiconductor memory device
12/30/2010US20100328990 Sram device
12/30/2010US20100328989 Semiconductor device and manufacturing method thereof and method for writing memory element
12/30/2010US20100328988 Nonvolatile semiconductor memory device
12/30/2010US20100328984 Piezo-effect transistor device and applications
12/30/2010DE102009030039A1 Vorrichtung zum Erzeugen einer vorgegebenen Phasenverschiebung An apparatus for generating a predetermined phase shift
12/30/2010DE102009029784A1 Integrierter Schaltkreis und Standardzelle eines integrierten Schaltkreises An integrated circuit and a standard cell integrated circuit
12/30/2010DE102006015017B4 Leistungsdrosselungssystem und -verfahren für eine Speichersteuerung Power reduction system and method for a memory controller
12/30/2010DE102005040840B4 Assoziativspeicherzelle mit resistiven Speicherelementen Content addressable memory cell having the resistive memory elements
12/29/2010WO2010151428A1 Detecting the completion of programming for non-volatile storage
12/29/2010WO2010151427A1 Forecasting program disturb in memory by detecting natural threshold voltage distribution
12/29/2010WO2010151359A1 Spin-torque magnetoresistive structures with bilayer free layer
12/29/2010WO2010150432A1 Semiconductor storage device
12/29/2010WO2010150054A1 Autonomous control of a memory.
12/29/2010EP2267897A1 Input/output buffer
12/29/2010EP2267811A2 CPP type giant magnetoresistance device and magnetic compounds and units using the same
12/29/2010EP2267723A1 Semiconductor memory device and method of controlling the same
12/29/2010EP2267722A1 Method and system for hiding refreshes in a dynamic random access memory
12/29/2010EP2266136A1 Magnetic tunnel junction cell including multiple vertical magnetic domains
12/29/2010EP2266117A1 Read reference technique with current degradation protection
12/29/2010EP2266116A2 Systems, methods, and apparatuses to save memory self-refresh power
12/29/2010EP2266036A2 Methods and apparatus for storing data in a multi-level cell flash memory device with cross-page sectors, multi-page coding and per-page coding
12/29/2010EP1599881B1 Nand flash memory avoiding program disturb with a self boosting technique
12/29/2010CN201689684U Plural flash memory parallel storage device
12/29/2010CN101931047A Method for manufacturing nonvolatile memory
12/29/2010CN101930797A Fusion memory device and system
12/29/2010CN101930795A Bit line pretreatment and storage device and method
12/29/2010CN101930794A Synchronous flash memory with status burst output
12/29/2010CN101930793A Memory device and method for sensing and fixing margin cells
12/29/2010CN101930792A Memory and write control method
12/29/2010CN101930791A Memory and data processing method
12/29/2010CN101930403A Hard disk system and access method thereof
12/29/2010CN101930402A Nonvolatile memory with error detection/correction circuit and reading and writing method thereof
12/29/2010CN101290970B Rewritable electrical storage with inorganic thin film and preparing method thereof
12/29/2010CN101237025B Nonvolatile memory devices and methods of fabricating the same
12/29/2010CN101038787B Static random access memory device haivng a high-bandwidth and occupying a small area
12/29/2010CA2757477A1 Spin-torque magnetoresistive structures with bilayer free layer
12/28/2010US7860351 Spin-injection magnetoresistance effect element
12/28/2010US7859930 Embedded memory databus architecture
12/28/2010US7859912 Mid-size NVM cell and array utilizing gated diode for low current programming
12/28/2010US7859911 Circuit and system for programming a floating gate
12/28/2010US7859907 Non-volatile semiconductor memory
12/28/2010US7859905 Semiconductor storage device and method of manufacturing the same
12/28/2010US7859901 Semiconductor memory device
12/28/2010US7859898 Nonvolatile semiconductor memory device including NAND-type flash memory and the like
12/28/2010US7859896 Semiconductor device
12/28/2010US7859895 Standalone thin film memory
12/28/2010US7859894 Energy adjusted write pulses in phase-change memory cells
12/28/2010US7859893 Phase change memory structure with multiple resistance states and methods of programming and sensing same
12/28/2010US7859891 Static source plane in stram
12/28/2010US7859890 Memory device with multiple capacitor types
12/28/2010US7859889 Semiconductor memory device
12/28/2010US7859888 Resistive memory device
12/28/2010US7859887 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
12/28/2010US7859886 Resistance memory element and method of manufacturing the same, and semiconductor memory device
12/28/2010US7859885 Phase changing memory device
12/28/2010US7859884 Structure and method for biasing phase change memory array for reliable writing
12/28/2010US7859883 Recordable electrical memory
12/28/2010US7859882 Resistive memory device and method of writing data
12/28/2010US7859436 Memory device receiver
12/28/2010US7859349 Fully integrated tuneable spin torque device for generating an oscillating signal and method for tuning such apparatus
12/28/2010US7859303 Nonvolatile programmable logic circuit
12/28/2010US7859069 Magnetic storage element with storage layer magnetization directed for increased responsiveness to spin polarized current
12/28/2010US7858985 Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
12/28/2010US7858449 Thyristor device with carbon lifetime adjustment implant and its method of fabrication
12/23/2010WO2010148251A1 Static noise margin estimation
12/23/2010WO2010148248A1 Differential sense amplifier with current mirroring and reference memory cell
12/23/2010WO2010147770A2 Use of emerging non-volatile memory elements with flash memory
12/23/2010WO2010146640A1 Semiconductor integrated circuit device and electronic equipment
12/23/2010US20100322026 Mechanism for measuring read current variability of sram cells
12/23/2010US20100322008 Nonvolatile semiconductor memory device
12/23/2010US20100321994 Memory self-reference read and write assist methods
12/23/2010US20100321993 Methods of forming spin torque devices and structures formed thereby
12/23/2010US20100321992 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same
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