Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2011
06/01/2011CN102082018A Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof
06/01/2011CN102081966A Sensitive amplifier device and output control method thereof
06/01/2011CN102081965A Circuit for generating inner write clock of dynamic random access memory (DRAM)
06/01/2011CN102081964A Method and system for refreshing dynamic random access memory
06/01/2011CN102081963A Embedded dynamic random access memory (eDRAM) cell -gain cell eDRAM cell with metal oxide semiconductor (MOS) capacitors and preparation method of gain cell eDRAM cells
06/01/2011CN102081962A EDRAM (Enhanced Dynamic Random Access Memory) unit of gain unit, memory and operating method
06/01/2011CN102081959A Storage reading circuit and storage
06/01/2011CN101562041B Method, device and network device for realizing SDRAM table search
06/01/2011CN101414480B Control device for phase-change memory cell and method for adding phase-change memory cell reliability
06/01/2011CN101350360B Three-dimensional stacking non-phase-change caused resistance conversion storage apparatus and manufacturing method thereof
06/01/2011CN101315811B Dynamic phase-change memory
06/01/2011CN101252170B Full epitaxial electric resistance changing multi-layer films based on silicon substrate, method and application thereof
06/01/2011CN101241754B Magnetic domain information storage device and method of manufacturing the same
06/01/2011CN101213611B Low power multiple bit reading amplifier and reading method
06/01/2011CN101034732B Resistance random memory device
06/01/2011CN101030444B Magnetic device unit using magnetic domain dragging and method for operating the same
05/2011
05/31/2011US7953569 On die thermal sensor of semiconductor memory device and method thereof
05/31/2011US7952957 Circuit for generating read and signal and circuit for generating internal clock using the same
05/31/2011US7952934 Method for programming a memory structure
05/31/2011US7952933 Semiconductor memory device
05/31/2011US7952931 Nonvolatile semiconductor memory device which realizes “1” write operation by boosting channel potential
05/31/2011US7952930 NAND flash memory
05/31/2011US7952929 Source side asymmetrical precharge programming scheme
05/31/2011US7952928 Increasing read throughput in non-volatile memory
05/31/2011US7952926 Nonvolatile semiconductor memory device having assist gate
05/31/2011US7952924 NAND memory device and programming methods
05/31/2011US7952921 1-transistor type DRAM cell, DRAM device and DRAM comprising thereof and driving method thereof and manufacturing method thereof
05/31/2011US7952920 Phase change memory array circuits and methods of manufacture
05/31/2011US7952919 Phase change memory structure with multiple resistance states and methods of programming and sensing same
05/31/2011US7952918 Method of operating a magnetoresistive RAM
05/31/2011US7952917 Variable write and read methods for resistive random access memory
05/31/2011US7952916 Resistance-change memory
05/31/2011US7952915 Core-rotating element of ferromagnetic dot and information memory element using the core of ferromagnetic dot
05/31/2011US7952914 Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
05/31/2011US7952913 Back gated SRAM cell
05/31/2011US7952912 Static random access memory cell and devices using same
05/31/2011US7952911 SRAM cell array structure
05/31/2011US7952910 Memory device with split power switch
05/31/2011US7952909 Nonvolatile semiconductor memory device
05/31/2011US7952908 Apparatus and method for sensing multi-level cell data
05/31/2011US7952907 Ferroelectric random access memory device
05/31/2011US7950779 Inkjet printhead with heaters suspended by sloped sections of less resistance
05/31/2011US7950777 Ejection nozzle assembly
05/31/2011US7950775 Printhead integrated circuit having glass nozzle chambers
05/26/2011WO2011062917A1 Data coding for improved ecc eddiciency in a nonvolatile storage system
05/26/2011WO2011062825A2 Bit-replacement technique for dram error correction
05/26/2011WO2011061875A1 Memory interface circuit and drive capability adjustment method of memory device
05/26/2011WO2011060973A1 Area efficient neuromorphic circuits
05/26/2011US20110126073 Error Correction in an Electronic Circuit
05/26/2011US20110125310 System and method for limiting energy in an industrial control system
05/26/2011US20110122710 Method and apparatus for generating a sequence of clock signals
05/26/2011US20110122701 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
05/26/2011US20110122686 Non-volatile electromechanical configuration bit array
05/26/2011US20110122685 Multi-level phase-change memory device and method of operating same
05/26/2011US20110122684 Voltage compensation circuit, multi-level memory device with the same, and voltage compensation method for reading the multi-level memory device
05/26/2011US20110122683 Resetting Phase Change Memory Bits
05/26/2011US20110122682 High Density Low Power Nanowire Phase Change Material Memory Device
05/26/2011US20110122681 Semiconductor memory device
05/26/2011US20110122680 Variable resistance nonvolatile memory device
05/26/2011US20110122679 Resistive Sense Memory Calibration for Self-Reference Read Method
05/26/2011US20110122678 Anti-Parallel Diode Structure and Method of Fabrication
05/26/2011US20110122677 Semiconductor memory device
05/26/2011US20110122676 Semiconductor memory device
05/26/2011US20110122675 Programmable Resistance Memory
05/26/2011US20110122674 Reverse connection mtj cell for stt mram
05/26/2011US20110122673 Semiconductor device including memory cell
05/26/2011US20110122261 Camera Unit Incorporating A Printer Configured To Print Distorted Images
05/26/2011US20110121863 Sense amplifier for low voltage high speed sensing
05/26/2011DE112009001620T5 Nichtflüchtige Speichervorrichtung mit mehreren Bits Pro Zelle (MBC) und System mit Polaritätssteuerung sowie Verfahren zum Programmieren derselbigen A non-volatile memory device with multiple bits per cell (MBC) and polarity control system and method for programming derselbigen
05/25/2011EP2325846A1 A magnetic tunnel junction memory with thermally assisted writing
05/25/2011EP2325752A2 Memory device supporting a dynamically configurable core organisation
05/25/2011EP2324478A2 Systems, methods, and apparatuses for in-band data mask bit transmission
05/25/2011EP2324428A1 Memory system and method of controlling memory system
05/25/2011EP1751770B1 Boosting to control programming of non-volatile memory
05/25/2011CN102077291A Controlled value reference signals of resistance based memory circuits
05/25/2011CN102074329A Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof
05/25/2011CN102074270A Multivalue storage method of primary programming memory
05/25/2011CN102074268A Controlling voltage levels applied to access devices when accessing storage cells in a memory
05/25/2011CN102074267A Memory with improved read stability
05/25/2011CN102074266A Spin valve storage cell for stabilizing residual magnetism state
05/24/2011US7949933 Semiconductor integrated circuit device
05/24/2011US7949823 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
05/24/2011US7949821 Method of storing data on a flash memory device
05/24/2011US7948806 Device with precharge/homogenize circuit
05/24/2011US7948802 Sensing memory cells
05/24/2011US7948801 Nonvolatile memory device with expanded trimming operations
05/24/2011US7948799 Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices
05/24/2011US7948796 Nonvolatile semiconductor memory device and method for controlling the same
05/24/2011US7948795 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
05/24/2011US7948794 Nonvolatile memory device using variable resistive element
05/24/2011US7948793 Temperature compensation in memory devices and systems
05/24/2011US7948792 Memory and techniques for using same
05/24/2011US7948791 Memory array and method of implementing a memory array
05/24/2011US7948790 Semiconductor memory device
05/24/2011US7948789 Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
05/24/2011US7948788 Method for driving ferroelectric memory device, ferroelectric memory device, and electronic equipment
05/24/2011US7948784 Semiconductor memory device having vertical transistors
05/24/2011US7948770 AC—LED system in single chip with three metal contacts
05/24/2011US7948082 Method of fabricating a patterned nanoscopic article
05/24/2011US7948054 Two-terminal nanotube devices and systems and methods of making same