| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
|---|
| 03/01/2011 | US7898842 Memory for storing a binary state |
| 03/01/2011 | US7898841 Preservation circuit and methods to maintain values representing data in one or more layers of memory |
| 03/01/2011 | US7898840 Nonvolatile semiconductor memory device |
| 03/01/2011 | US7898839 Semiconductor memory device and method of writing into semiconductor memory device |
| 03/01/2011 | US7898838 Resistive sense memory calibration for self-reference read method |
| 03/01/2011 | US7898837 F-SRAM power-off operation |
| 03/01/2011 | US7898290 Method and apparatus for high resolution ZQ calibration |
| 03/01/2011 | US7897957 Non-volatile resistance switching memory |
| 03/01/2011 | US7897953 Multi-level programmable PCRAM memory |
| 03/01/2011 | US7897952 Phase-change memory cell with a patterned layer |
| 03/01/2011 | US7897424 Method of manufacturing an electrical-mechanical memory device |
| 03/01/2011 | US7897412 Method of manufacturing magnetic random access memory including middle oxide layer |
| 03/01/2011 | US7897411 Non-volatile resistance switching memory |
| 02/24/2011 | WO2011022029A1 Gate drive voltage boost schemes for memory array ii |
| 02/24/2011 | WO2011020225A1 Capacity and density enhancement circuit for sub-threshold memory unit array |
| 02/24/2011 | WO2010136007A3 Memory element, stacking, memory matrix and method for operation |
| 02/24/2011 | US20110044099 Heat assisted magnetic write element |
| 02/24/2011 | US20110044098 Nonvolatile Memory Cells Having Phase Changeable Patterns Therein for Data Storage |
| 02/24/2011 | US20110044097 Phase change memory and operation method of the same |
| 02/24/2011 | US20110044096 Magnetic Tunnel Junction Structure |
| 02/24/2011 | US20110044095 Semiconductor memory device |
| 02/24/2011 | US20110044094 10T SRAM Cell with Near Dual Port Functionality |
| 02/24/2011 | US20110044093 Non-volatile memory devices including stacked nand-type resistive memory cell strings |
| 02/24/2011 | US20110044092 Semiconductor memory device |
| 02/24/2011 | US20110044091 Two-terminal nanotube devices and systems and methods of making same |
| 02/24/2011 | US20110044090 Nonvolatile semiconductor memory device |
| 02/24/2011 | US20110044089 Method for Manufacturing a Resistive Switching Memory Cell Comprising a Nickel Oxide Layer Operable at Low-Power and Memory Cells Obtained Thereof |
| 02/24/2011 | US20110044088 Variable resistance nonvolatile storage device and method of forming memory cell |
| 02/24/2011 | US20110044087 Semiconductor memory device |
| 02/24/2011 | US20110043254 Sense Amplifier and Electronic Apparatus Using the Same |
| 02/23/2011 | EP2287909A2 Depletion-mode MOSFET circuits and applications |
| 02/23/2011 | EP2287908A2 Depletion-mode MOSFET circuits and applications |
| 02/23/2011 | EP2287902A1 Magnetic memory cell and magnetic random access memory |
| 02/23/2011 | EP2287849A2 Semiconductor memory having dual port cell supporting hidden refresh |
| 02/23/2011 | EP2287743A2 Memory device supporting a dynamically configurable core organisation |
| 02/23/2011 | EP2286473A1 Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element |
| 02/23/2011 | EP1894205B1 Compensation currents in non-volatile memory read operations |
| 02/23/2011 | EP1623429B1 Skewed sense amp for variable resistance memory sensing |
| 02/23/2011 | CN1637948B Set programming methods and write driver circuits for a phase-change memory array |
| 02/23/2011 | CN101981626A 半导体存储装置 The semiconductor memory device |
| 02/23/2011 | CN101981540A Method of reducing the occurrence of burn-in due to negative bias temperature instability |
| 02/23/2011 | CN101330086B Noise suppression for open bit line DRAM architectures |
| 02/22/2011 | US7894283 Integrated circuit including selectable address and data multiplexing mode |
| 02/22/2011 | US7894273 Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits |
| 02/22/2011 | US7894269 Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
| 02/22/2011 | US7894267 Deterministic programming algorithm that provides tighter cell distributions with a reduced number of programming pulses |
| 02/22/2011 | US7894264 Controlling a memory device responsive to degradation |
| 02/22/2011 | US7894261 PFET nonvolatile memory |
| 02/22/2011 | US7894259 Nonvolatile semiconductor memory device with first and second write sequences controlled by a command or an address |
| 02/22/2011 | US7894258 Flash memory device for determining most significant bit program |
| 02/22/2011 | US7894257 Low voltage low cost non-volatile memory |
| 02/22/2011 | US7894256 Thyristor based memory cell |
| 02/22/2011 | US7894255 Thyristor based memory cell |
| 02/22/2011 | US7894254 Refresh circuitry for phase change memory |
| 02/22/2011 | US7894253 Carbon filament memory and fabrication method |
| 02/22/2011 | US7894252 Magnetic memory cell and method of fabricating same |
| 02/22/2011 | US7894251 Semiconductor memory device |
| 02/22/2011 | US7894250 Stuck-at defect condition repair for a non-volatile memory cell |
| 02/22/2011 | US7894249 Magnetoresistive element and magnetic random access memory |
| 02/22/2011 | US7894248 Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
| 02/22/2011 | US7894247 Scalable magnetic random access memory device |
| 02/22/2011 | US7894246 Magnetoresistive element and magnetic memory |
| 02/22/2011 | US7894245 Spin-current switchable magnetic memory element and method of fabricating the memory element |
| 02/22/2011 | US7894244 Tunnel magnetic resistance device, and magnetic memory cell and magnetic random access memory using the same |
| 02/22/2011 | US7894243 Methods of programming and erasing resistive memory devices |
| 02/22/2011 | US7894242 Device for storing a binary state |
| 02/22/2011 | US7894240 Method and apparatus for reducing charge trapping in high-k dielectric material |
| 02/22/2011 | US7894237 Programming multilevel cell phase change memories |
| 02/22/2011 | US7894235 F-RAM device with current mirror sense amp |
| 02/22/2011 | US7894234 F-SRAM before package solid data write |
| 02/22/2011 | US7894232 Semiconductor device having user field and vendor field |
| 02/22/2011 | US7891779 Inkjet printhead with nozzle layer defining etchant holes |
| 02/17/2011 | WO2011017843A1 Sub-threshold memory cell circuit with high density and high robustness |
| 02/17/2011 | US20110039020 Magnetic Materials Having Superparamagnetic Particles |
| 02/17/2011 | US20110038216 Method for reading memory cell |
| 02/17/2011 | US20110038201 Semiconductor integrated circuit |
| 02/17/2011 | US20110038200 Gate drive voltage boost schemes for memory array II |
| 02/17/2011 | US20110038199 Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition |
| 02/17/2011 | US20110038198 Electronic devices based on current induced magnetization dynamics in single magnetic layers |
| 02/17/2011 | US20110038197 Variable resistance memory and memory system including the same |
| 02/17/2011 | US20110038196 Electronic Devices Containing Switchably Conductive Silicon Oxides as a Switching Element and Methods for Production and Use Thereof |
| 02/17/2011 | US20110038195 Method for resetting a resistive change memory element |
| 02/17/2011 | US20110038194 Semiconductor storage device |
| 02/17/2011 | DE10222691B4 Taktsynchronisationsvorrichtung Clock synchronization device |
| 02/17/2011 | DE102004036893B4 Getakteter Halbleiterspeicherbaustein und zugehöriges Speichermodul Pulsed semiconductor memory device and associated memory module |
| 02/16/2011 | EP2285002A2 Antifuse reroute of dies |
| 02/16/2011 | EP2284839A1 Static memory device with five transistors and operating method. |
| 02/16/2011 | EP2284838A1 Semiconductor memory, memory controller, system, and operating method of semiconductor memory |
| 02/16/2011 | EP1704571B1 Non-volatile memory and method with block management system |
| 02/16/2011 | EP1527457B1 Memory cells enhanced for resistance to single event upset |
| 02/16/2011 | EP1466448B1 Method and apparatus for integration of communication links with a remote direct memory access protocol |
| 02/16/2011 | CN201749692U Software updating device of speed changing box control unit |
| 02/16/2011 | CN1637940B Semiconductor memory device for high speed data access |
| 02/16/2011 | CN101978426A Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors |
| 02/16/2011 | CN101582485B Doping modified phase change material and phase change storage unit containing same and preparation method thereof |
| 02/16/2011 | CN101226988B Method for reducing CuxO resistance memory write operation current |
| 02/15/2011 | USRE42145 Write-assisted SRAM bit cell |
| 02/15/2011 | USRE42144 Non-volatile memory comprising means for distorting the output of memory cells |
| 02/15/2011 | US7889594 Semiconductor memory device |
| 02/15/2011 | US7889593 Method and apparatus for generating a sequence of clock signals |