Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2011
04/20/2011EP2311110A1 System and method to fabricate magnetic random access memory
04/20/2011EP2311041A1 Methods and apparatus for programming multiple program values per signal level in flash memories
04/20/2011EP2311040A1 Compensating for coupling during read operations in non-volatile storage
04/20/2011EP2311039A2 Multi-mode memory device and method
04/20/2011EP2311038A1 Controlled value reference signal of resistance based memory circuit
04/20/2011EP1751767B1 Thin film memory device having a variable resistance
04/20/2011CN201804568U Random storage
04/20/2011CN1828772B Apparatus and method for controlling clock signal in semiconductor memory device
04/20/2011CN1809869B Driver and display device
04/20/2011CN1716446B Input/output circuit and semiconductor storage device
04/20/2011CN1713299B Magnetic memory unit and fabricating method thereof
04/20/2011CN1679117B Method of programming a multi-level memory device
04/20/2011CN1606093B Non-volatile memory cell using torque and random access magnetic memory using same
04/20/2011CN102027548A Non-volatile multilevel memory with adaptive setting of reference voltage levels for program, verify and read
04/20/2011CN102024903A Magnetic memory device
04/20/2011CN102024823A Integrated circuit with embedded SRAM and technical method thereof
04/20/2011CN102024816A Semiconductor memory device
04/20/2011CN102024494A Green transistor, resistive random access memory and drive method thereof
04/20/2011CN102024493A 半导体集成电路 The semiconductor integrated circuit
04/20/2011CN102024492A Pseudo-static memory and method for controlling write operation and refresh operation of pseudo-static memory
04/20/2011CN102024491A Random access memory and control method thereof
04/20/2011CN102024490A Pseudo-static memory, and reading operation and refreshing operation control method thereof
04/20/2011CN102024489A Semiconductor memory device and multilayered chip semiconductor device
04/20/2011CN101624701B Dry etching method for magnetic material
04/20/2011CN101515566B Method for forming integrated circuit
04/20/2011CN101404179B Method for improving programming speed of phase-change memory and realization method
04/20/2011CN101329909B Method for improving programming speed of phase-change memory
04/20/2011CN101262004B Phase change storage unit and method for dual shallow groove separated bipolar transistor selection
04/20/2011CN101202100B Composite store cell
04/20/2011CN101091255B Ferroelectric polymer memory device including polymer electrodes and method of fabricating same
04/19/2011US7929370 Spin momentum transfer MRAM design
04/19/2011US7929359 Embedded DRAM with bias-independent capacitance
04/19/2011US7929353 Method and apparatus for adaptive memory cell overerase compensation
04/19/2011US7929351 Method for reducing lateral movement of charges and memory device thereof
04/19/2011US7929349 Method of operating nonvolatile memory device
04/19/2011US7929348 Non-volatile semiconductor memory device
04/19/2011US7929347 Compact virtual ground diffusion programmable ROM array architecture, system and method
04/19/2011US7929343 Methods, devices, and systems relating to memory cells having a floating body
04/19/2011US7929342 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
04/19/2011US7929341 Electromechanical switch and method of forming the same
04/19/2011US7929340 Phase change memory cell and manufacturing method
04/19/2011US7929338 Memory reading method for resistance drift mitigation
04/19/2011US7929337 Phase-change random access memories capable of suppressing coupling noise during read-while-write operation
04/19/2011US7929336 Integrated circuit including a memory element programmed using a seed pulse
04/19/2011US7929335 Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
04/19/2011US7929334 In-situ resistance measurement for magnetic random access memory (MRAM)
04/19/2011US7929333 Semiconductor memory device
04/19/2011US7929332 Semiconductor memory device and semiconductor device
04/19/2011US7929331 Microelectronic programmable device and methods of forming and programming the same
04/19/2011US7929328 Memory and storage device utilizing the same
04/19/2011US7928523 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
04/19/2011US7928420 Phase change tip storage cell
04/19/2011US7928419 Electrolytic device based on a solution-processed electrolyte
04/14/2011WO2011042327A1 Method for production of selective or laminar coatings in plastic electronics
04/14/2011US20110087838 Memory Device and Operation Method Therefor
04/14/2011US20110085391 Memory with improved read stability
04/14/2011US20110085377 Nonvolatile semiconductor storage device, and method for controlling nonvolatile semiconductor storage device
04/14/2011US20110085376 Shunted Phase Change Memory
04/14/2011US20110085375 Methods for determining resistance of phase change memory elements
04/14/2011US20110085374 Semiconductor device
04/14/2011US20110085373 Spin-transfer torque memory self-reference read method
04/14/2011US20110085372 Non-volatile sram cell that incorporates phase-change memory into a cmos process
04/14/2011US20110085371 Apparatus of low power dual word line six-transistor srams
04/14/2011US20110085370 Soft forming reversible resistivity-switching element for bipolar switching
04/14/2011US20110085369 Method to improve ferroelectric memory performance and reliability
04/14/2011US20110085368 Non-volatile memory device and method of manufacturing the same
04/14/2011US20110085008 Printhead assembly having recessed printhead
04/14/2011DE102010047933A1 Speicherzelle Memory cell
04/14/2011DE102006036602B4 Halbleiterspeichervorrichtung mit einer Offen-Bitleitung-Architektur sowie Verfahren zum Steuern der Bitleitungen einer solchen Halbleiterspeichervorrichtung A semiconductor memory device having an open bit line architecture and to methods for controlling the bit lines of such a semiconductor memory device
04/14/2011DE102005034665B4 Verfahren zum Herstellen einer Leiterbahn einer resistiven Speichereinrichtung A method of manufacturing a conductor track of a resistive memory device
04/13/2011EP2309517A1 Method of updating contents of a multibit flash memory
04/13/2011EP2309516A1 Method for multilevel programming of phase change memory cells using a percolation algorithm
04/13/2011EP2309515A1 Memory device comprising an array of nanoscale cells
04/13/2011EP2309514A1 Circuit for generating adjustable timing signals for sensing a self-referenced MRAM cell
04/13/2011EP2309513A2 Bias sensing in DRAM sense amplifiers
04/13/2011EP2308058A1 Methods and apparatus for read-side intercell interference mitigation in flash memories
04/13/2011EP2308056A1 Methods and apparatus for soft demapping and intercell interference mitigation in flash memories
04/13/2011EP2308055A1 Methods and apparatus for intercell interference mitigation using modulation coding
04/13/2011EP2308054A1 Methods and apparatus for interfacing between a flash memory controller and a flash memory array
04/13/2011EP2308053A1 Method and apparatus for write-side intercell interference mitigation in flash memories
04/13/2011EP2308050A1 Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size
04/13/2011CN1725370B Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
04/13/2011CN102017128A Magnetic tunnel junction cell including multiple vertical magnetic domains
04/13/2011CN102017008A Localized calibration of programmable digital logic cells
04/13/2011CN102017006A Apparatus, method and system for reconfigurable circuitry
04/13/2011CN102017005A Heat assisted magnetic write element
04/13/2011CN102017004A Array structural design of magnetoresistive random access memory (MRAM) bit cells
04/13/2011CN102017003A Method and apparatus for accessing a bidirectional memory
04/13/2011CN102013431A Mushroom type memory cell having self-aligned bottom electrode and diode access device
04/13/2011CN102013271A Fast reading device and method of phase change memory
04/13/2011CN102013270A Semiconductor integrated circuit
04/13/2011CN102013269A 半导体集成电路 The semiconductor integrated circuit
04/13/2011CN101552603B Read-write drive circuit of phase transformation storage unit
04/13/2011CN101464789B Random number generator and its generation method
04/13/2011CN101290948B Memory structure and its manufacture method, and manufacture method of memory cell array
04/13/2011CN101206913B Three-dimensional magnetic memory
04/13/2011CN101162755B Semiconductor device and method of manufacturing the same
04/12/2011US7924627 Semiconductor memory device
04/12/2011US7924617 Selective threshold voltage verification and compaction
04/12/2011US7924615 Nonvolatile semiconductor memory device