Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2011
02/03/2011US20110026321 Magnetic memory with porous non-conductive current confinement layer
02/03/2011US20110026320 Staggered magnetic tunnel junction
02/03/2011US20110026319 Non-volatile semiconductor memory circuit and method of controlling the same
02/03/2011US20110026318 Iterative write pausing techniques to improve read latency of memory systems
02/03/2011US20110026317 Spin-transfer torque memory self-reference read and write assist methods
02/03/2011US20110026316 Magnetoresistive memory elements with separate read and write current paths
02/03/2011US20110026315 Single-Event Upset Immune Static Random Access Memory Cell Circuit, System, And Method
02/03/2011US20110026314 Static Memory Device with Five Transistors and Operating Method
02/03/2011US20110026313 Transistor-based memory cell and related operating methods
02/03/2011US20110026312 Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor
02/03/2011US20110026311 Memory device using SRAM circuit
02/03/2011US20110026310 Power-saving semiconductor memory
02/03/2011US20110026309 Self-timed write boost for sram cell with self mode control
02/03/2011US20110026308 Cell structure for dual port sram
02/03/2011US20110026307 Variable resistive memory punchthrough access method
02/03/2011US20110026306 Resistance variable memory device reducing word line voltage
02/03/2011US20110026305 Non-Volatile Memory Array With Resistive Sense Element Block Erase and Uni-Directional Write
02/03/2011US20110026304 Memory cell
02/03/2011US20110026303 Variable resistance memory device and system thereof
02/03/2011US20110026302 Write verify method for resistive random access memory
02/03/2011US20110026301 Semiconductor memory device
02/03/2011US20110026300 Resistive memory device and operating method thereof
02/03/2011US20110026299 Nonvolatile semiconductor memory device and method of data write/data erase therein
02/03/2011US20110026298 Method of driving storage device
02/03/2011US20110026297 Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
02/03/2011US20110025937 Electrodes located at storage capacitor wiring in active matrix substrate
02/03/2011US20110025777 Printer having multiple nozzle ics and cappers
02/03/2011DE19852986B4 Schaltungsanordnung und Verfahren zur Datenmaskierung Circuit arrangement and method for data masking
02/03/2011DE10296525B4 Chipinterne Schaltungen für ein Hochgeschwindigkeitsspeichertesten mit einem langsamen Speichertester On-chip circuits for high-speed memory testing with a slow memory tester
02/03/2011DE10121165B4 Verfahren und Vorrichtung zum Initialisieren einer asynchronen Latch-Kette Method and apparatus for initializing an asynchronous latch chain
02/02/2011EP2280399A1 Memory device having posted write per command
02/02/2011CN201732581U Network based FLASH memory device
02/02/2011CN1787109B Method for controlling data flowing of high speed memory body
02/02/2011CN1637946B Internal voltage generating circuit in semiconductor memory device
02/02/2011CN101965615A Magnetic tunnel junction cell including multiple magnetic domains
02/02/2011CN101965614A Digit line equilibration using access devices at the edge of sub-arrays
02/02/2011CN101964394A Method for preparing phase change unit of phase change memory
02/02/2011CN101964324A Active matrix substrate and display device
02/02/2011CN101546809B Memory devices and methods for manufacturing the same
02/02/2011CN101452737B Multiport memory based on dynamic random access memory core
02/01/2011US7882355 Encryption/decryption methods and devices utilizing the same
02/01/2011US7881122 Discharge circuit
02/01/2011US7881121 Decoding method in an NROM flash memory array
02/01/2011US7881117 High voltage generator circuit and flash memory device including the same
02/01/2011US7881112 Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
02/01/2011US7881111 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
02/01/2011US7881108 Maintenance operations for multi-level data storage cells
02/01/2011US7881104 Magnetic memory with separate read and write paths
02/01/2011US7881103 Phase-change memory device and method of fabricating the same
02/01/2011US7881102 Semiconductor device including resistance storage element
02/01/2011US7881101 Nonvolatile memory devices that include a write circuit that writes data over multiple write periods using pulses whose peaks do not coincide with each other
02/01/2011US7881100 State machine sensing of memory cells
02/01/2011US7881099 Multibit magnetic random access memory device
02/01/2011US7881098 Memory with separate read and write paths
02/01/2011US7881097 Storage element and memory
02/01/2011US7881095 Asymmetric write current compensation using gate overdrive for resistive sense memory cells
02/01/2011US7881094 Voltage reference generation for resistive sense memory cells
02/01/2011US7881093 Programmable precision resistor and method of programming the same
02/01/2011US7881092 Increased switching cycle resistive memory element
02/01/2011US7881091 Methods of making quantum dot films
02/01/2011US7881088 Content addressable memory device
02/01/2011US7881026 Semiconductor integrated circuit
02/01/2011US7880208 Magnetic materials having superparamagnetic particles
02/01/2011US7878627 Printhead assembly having printhead recessed in channel body
01/2011
01/29/2011CA2707914A1 Operation frequency adjusting system and method
01/27/2011WO2011011007A1 Non-volatile data-storage latch
01/27/2011US20110022873 System with power saving delay locked loop control
01/27/2011US20110019492 Test device and test method for resistive random access memory and resistive random access memory device
01/27/2011US20110019469 Semiconductor memory
01/27/2011US20110019468 Non-linear conductor memory
01/27/2011US20110019467 Vertically stacked field programmable nonvolatile memory and method of fabrication
01/27/2011US20110019466 Stuck-At Defect Condition Repair for a Non-Volatile Memory Cell
01/27/2011US20110019465 Magnetic tunnel junction with compensation element
01/27/2011US20110019464 Smart Well Assisted SRAM Read and Write
01/27/2011US20110019463 Static Random Access Memories and Access Methods Thereof
01/27/2011US20110019462 Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
01/27/2011US20110019461 F-SRAM Power-Off Operation
01/27/2011DE102007022570B4 Halbleiterspeichervorrichtung, Verfahren zum Betreiben einer Halbleiterspeichervorrichtung und elektronisches Gerät A semiconductor memory device, method of operating a semiconductor memory device and electronic apparatus
01/27/2011DE102006009216B4 Synchronisation von Datenbestätigungssignalen für DRAM-Vorrichtungen Synchronization of data acknowledgment signals for DRAM devices
01/26/2011EP2278620A1 Integrated circuit, memory cell, memory module, and method of manufacturing an integrated circuit
01/26/2011EP2278589A1 Magnetic element with a fast spin transfer torque writing procedure
01/26/2011EP2278474A1 Method and apparatus for coordinating memory operations among diversely-located memory components
01/26/2011EP2277176A1 Apparatus, method and system for reconfigurable circuitry
01/26/2011EP2277175A2 Apparatus and method for producing switchable temporary magnetism in oxidic materials by means of electrical fields
01/26/2011EP2277174A2 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
01/26/2011EP1949466B1 A magnetoresistive tunnel junction magnetic device and its application to mram
01/26/2011EP1568038B1 A method and device to detect the likely onset of thermal relaxation in magnetic data storage devices
01/26/2011CN1996491B Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating the same
01/26/2011CN1542848B Memory cell, memory device and manufacturing method of memory cell
01/26/2011CN101960532A Systems, methods, and apparatuses to save memory self-refresh power
01/26/2011CN101960531A Ferroelectric memory device
01/26/2011CN101960530A Method of forming a magnetic tunnel junction device
01/26/2011CN101960529A Agiga tech inc
01/26/2011CN101958398A Thermal protect pcram structure and methods for making
01/26/2011CN101958395A Phase transformation random access memory and manufacturing method thereof
01/26/2011CN101958338A Phase change random access memory and manufacturing method and programming method thereof
01/26/2011CN101958336A Phase change random access memory and manufacturing method thereof
01/26/2011CN101958248A PN-junction diode, phase-change random access memory and manufacturing method thereof
01/26/2011CN101958148A Phase change random access memory unit structure capable of eliminating interference and phase change random access memory formed by same
01/26/2011CN101958147A Phase change memory device and method