| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 05/24/2011 | US7946503 Semiconductor device |
| 05/19/2011 | WO2011060172A1 System and method of operating a memory device |
| 05/19/2011 | WO2011058934A1 Semiconductor device and driving method thereof |
| 05/19/2011 | WO2011058390A1 Method and apparatus for information storing |
| 05/19/2011 | WO2011017082A3 Assay information management methods and devices |
| 05/19/2011 | US20110117542 Real time electronic cell sensing system and applications for cytotoxicity profiling and compound assays |
| 05/19/2011 | US20110116333 Memory test apparatus and testing method |
| 05/19/2011 | US20110116327 Memory Devices Having Adjustable Refresh Cycles Responsive to Temperature Changes |
| 05/19/2011 | US20110116326 Refresh Signal Generating Circuit |
| 05/19/2011 | US20110116323 Semiconductor device, method of controlling the same, and method of manufacturing the same |
| 05/19/2011 | US20110116315 Nonvolatile Semiconductor Memory Device |
| 05/19/2011 | US20110116310 Semiconductor device and driving method thereof |
| 05/19/2011 | US20110116309 Refresh Circuitry for Phase Change Memory |
| 05/19/2011 | US20110116308 Multiple phase change materials in an integrated circuit for system on a chip application |
| 05/19/2011 | US20110116307 Phase change memory device suitable for high temperature operation |
| 05/19/2011 | US20110116306 Magnetic random access memory and initializing method for the same |
| 05/19/2011 | US20110116305 Magnetoresistive element |
| 05/19/2011 | US20110116304 Spin current generator for stt-mram or other spintronics applications |
| 05/19/2011 | US20110116303 Magnetic Tunnel Junction and Memristor Apparatus |
| 05/19/2011 | US20110116302 Asymmetric Write Current Compensation Using Gate Overdrive for Resistive Sense Memory Cells |
| 05/19/2011 | US20110116301 State machine sensing of memory cells |
| 05/19/2011 | US20110116300 Nonvolatile semiconductor memory device |
| 05/19/2011 | US20110114911 Programmable Resistance Memory Element and Method for Making Same |
| 05/18/2011 | EP2323164A2 Dense arrays and charge storage devices, and methods for making same |
| 05/18/2011 | EP1934984B1 Nanowire magnetic random access memory |
| 05/18/2011 | EP1866930B1 Compensating for coupling in non-volatile strorage |
| 05/18/2011 | CN1811987B Bit line voltage supply circuit in semiconductor memory device and voltage supplying method therefor |
| 05/18/2011 | CN1720586B Smart verification for multi-state memories |
| 05/18/2011 | CN1612262B System and method for storing data in an unpatterned, continuous magnetic layer |
| 05/18/2011 | CN102067240A Semiconductor memory device |
| 05/18/2011 | CN102067233A Nonvolatile memory and method with index programming and reduced verify |
| 05/18/2011 | CN102067232A Electrical circuit comprising a dynamic random access memory (DRAM) with concurrent refresh and read or write, and method to perform concurrent refresh and read or write in such a memory |
| 05/18/2011 | CN102067231A Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size |
| 05/18/2011 | CN102067230A Spin-transfer torque memory non-destructive self-reference read method |
| 05/18/2011 | CN102063935A Single-end low-swing bit line reading circuit |
| 05/18/2011 | CN102063934A Address control circuit and semiconductor memory device |
| 05/18/2011 | CN101207180B Multi-layer electrode structure |
| 05/18/2011 | CN101106370B Clock control method and circuit |
| 05/17/2011 | US7945801 Semiconductor integrated circuit |
| 05/17/2011 | US7945800 Synchronization devices having input/output delay model tuning elements in signal paths to provide tuning capabilities to offset signal mismatch |
| 05/17/2011 | US7945792 Tamper reactive memory device to secure data from tamper attacks |
| 05/17/2011 | US7945759 Non-volatile memory and method with phased program failure handling |
| 05/17/2011 | US7945723 Apparatus and method of managing mapping table of non-volatile memory |
| 05/17/2011 | US7944768 Software refreshed memory device and method |
| 05/17/2011 | US7944762 Non-volatile memory control |
| 05/17/2011 | US7944757 Non-volatile multilevel memory cell programming |
| 05/17/2011 | US7944754 Non-volatile memory and method with continuous scanning time-domain sensing |
| 05/17/2011 | US7944752 Method for programming a flash memory device |
| 05/17/2011 | US7944751 Method for programming of memory cells, in particular of the flash type, and corresponding programming architecture |
| 05/17/2011 | US7944748 Erase block data splitting |
| 05/17/2011 | US7944745 Flash memory array of floating gate-based non-volatile memory cells |
| 05/17/2011 | US7944744 Estimating values related to discharge of charge-storing memory cells |
| 05/17/2011 | US7944743 Methods of making a semiconductor memory device |
| 05/17/2011 | US7944742 Diode assisted switching spin-transfer torque memory unit |
| 05/17/2011 | US7944741 Apparatus and systems using phase change memories |
| 05/17/2011 | US7944740 Multi-level cell programming of PCM by varying the reset amplitude |
| 05/17/2011 | US7944739 Phase change memory device with bit line discharge path |
| 05/17/2011 | US7944738 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling |
| 05/17/2011 | US7944737 Magnetic memory cell based on a magnetic tunnel junction (MTJ) with independent storage and read layers |
| 05/17/2011 | US7944734 Integrating nonvolatile memory capability within SRAM devices |
| 05/17/2011 | US7944733 Static random access memory (SRAM) of self-tracking data in a read operation, and method thereof |
| 05/17/2011 | US7944732 Integrated capacitor with alternating layered segments |
| 05/17/2011 | US7944731 Resistive sense memory array with partial block update capability |
| 05/17/2011 | US7944730 Write method with voltage line tuning |
| 05/17/2011 | US7944729 Simultaneously writing multiple addressable blocks of user data to a resistive sense memory cell array |
| 05/17/2011 | US7944728 Programming a memory cell with a diode in series by applying reverse bias |
| 05/17/2011 | US7944473 Card based image manipulation method with card skew correction |
| 05/17/2011 | US7943399 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
| 05/17/2011 | US7942332 Camera unit incoporating program script scanner |
| 05/12/2011 | WO2011056483A1 Non-volatile memory and method with accelerated post-write read to manage errors |
| 05/12/2011 | WO2011056482A1 Non-volatile memory and method with post-write read and adaptive re-write to manage errors |
| 05/12/2011 | WO2011056478A1 Non-volatile memory and method with post-write read and adaptive re-write to manage errors |
| 05/12/2011 | WO2011055970A2 Ternary content-addressable memory |
| 05/12/2011 | WO2011055660A1 Semiconductor device |
| 05/12/2011 | WO2011055420A1 Semiconductor device |
| 05/12/2011 | US20110110170 Non-volatile memory systems and methods including page read and/or configuration features |
| 05/12/2011 | US20110110162 Structures and methods for reading out non-volatile memories |
| 05/12/2011 | US20110110151 Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current |
| 05/12/2011 | US20110110150 Semiconductor device |
| 05/12/2011 | US20110110149 Structure and method for biasing phase change memory array for reliable writing |
| 05/12/2011 | US20110110148 Memory arrays and associated methods of manufacturing |
| 05/12/2011 | US20110110147 Compound cell spin-torque magnetic random access memory |
| 05/12/2011 | US20110110146 Semiconductor memory which enables reliable data writing with low supply voltage by improving the conductance via access transistors during write operation |
| 05/12/2011 | US20110110145 Semiconductor device |
| 05/12/2011 | US20110110144 Writing method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device |
| 05/12/2011 | US20110110143 Method of programming nonvolatile memory element |
| 05/12/2011 | US20110110142 Memory device and method of reading memory device |
| 05/12/2011 | US20110110141 Resistive memory |
| 05/12/2011 | US20110110140 Reference current generator for resistance type memory and method thereof |
| 05/12/2011 | US20110110139 Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials |
| 05/12/2011 | US20110109700 Ink ejection mechanism with thermal actuator coil |
| 05/12/2011 | DE102004025977B4 Flash-Speicherbaustein Flash memory device |
| 05/11/2011 | EP2320489A1 Spin valve element and its driving method and storage device employing them |
| 05/11/2011 | EP2320425A1 Selection device for a spin transfer torque magnetoresistive random access memory |
| 05/11/2011 | EP2320424A1 Refreshing data stored in a flash memory |
| 05/11/2011 | EP2319077A1 Body contact for sram cell comprising double-channel transistors |
| 05/11/2011 | EP2319046A1 Non-volatile memory and method for ramp-down programming |
| 05/11/2011 | EP2319045A2 Memory devices and methods of storing data on a memory device |
| 05/11/2011 | EP2319044A2 Memory system and method using stacked memory device dice, and system using the memory system |
| 05/11/2011 | CN1622220B Input buffer for detecting an input signal |