Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2010
12/02/2010WO2010137125A1 Semiconductor device
12/02/2010WO2010137097A1 Semiconductor memory device and semiconductor integrated circuit
12/02/2010WO2010136527A1 Magnetic memory device with spin polarisation, and method for using same
12/02/2010WO2010136056A1 Resistive storage cell, crossbar array circuit, resistive random access memory device and read-out-method
12/02/2010US20100306579 Nonvolatile memory device and method of programming the same
12/02/2010US20100302879 Semiconductor memory device and method of controlling the same
12/02/2010US20100302871 Concurrent intersymbol interference encoding in a solid state memory
12/02/2010US20100302854 Area-Efficient Electrically Erasable Programmable Memory Cell
12/02/2010US20100302848 Transistor having peripheral channel
12/02/2010US20100302843 Spin Transfer Torque - Magnetic Tunnel Junction Device and Method of Operation
12/02/2010US20100302842 Semiconductor memory device, manufacturing method thereof, data processing system, and data processing device
12/02/2010US20100302841 Phase change memory apparatus and test circuit therefor
12/02/2010US20100302840 Phase change random access memory apparatus for controlling data transmission
12/02/2010US20100302839 Statis source plane in stram
12/02/2010US20100302838 Read disturb-free SMT reference cell scheme
12/02/2010US20100302837 Memory with read cycle write back
12/02/2010US20100302836 Nonvolatile memory cell comprising a diode and a resistance-switching material
12/02/2010US20100302835 Limited charge delivery for programming non-volatile storage elements
12/02/2010US20100302834 F-RAM device with current mirror sense amp
12/02/2010DE19923259B4 Speichereinrichtung und Verfahren zum Programmieren und Lesen einer Speichereinrichtung Memory device and method for programming and reading a memory device
12/01/2010EP2256910A1 Semiconductor integrated circuit device
12/01/2010EP2256748A1 Reducing read disturb for non-volatile storage
12/01/2010EP2255381A1 Self-repair integrated circuit and repair method
12/01/2010EP2255362A1 Magnetic member with thermally assisted writing
12/01/2010EP2255361A2 Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
12/01/2010EP1776230B1 Thermally conducting multi-layer film
12/01/2010EP1573745B1 Programmable interconnect cell for configuring a field programmable gate array
12/01/2010EP1312094B1 Method and apparatus for crossing clock domain boundaries
12/01/2010EP1236278B1 Method and apparatus for an n-nary logic circuit
12/01/2010CN1866570B Memory device and semiconductor device, method for driving memory device
12/01/2010CN1758372B Magnetic memory
12/01/2010CN101903954A Systems and methods for low power, high yield memory
12/01/2010CN101903953A Non-volatile semiconductor memory device with power saving feature
12/01/2010CN101903868A Memory device and memory device control method
12/01/2010CN101901630A Phase change random access memory apparatus for controlling data transmission
12/01/2010CN101901629A Nonvolatile memory protecting system and method
12/01/2010CN101477833B Clock controlled asynchronous FIFO memory
12/01/2010CN101330126B Phase variation storage unit structure and method for manufacturing the same
12/01/2010CN101253571B Persistent volatile memory cell
12/01/2010CN101207178B Phase-change storage element and manufacturing method thereof
12/01/2010CN101159312B Memory cell device with circumferentially-extending memory element
11/2010
11/30/2010USRE41969 Multi-state EEPROM having write-verify control circuit
11/30/2010US7844411 Semiconductor integrated circuit
11/30/2010US7843751 Semiconductor memory device comprising sense amplifier having P-type sense amplifier and N-type sense amplifiers with different threshold voltages
11/30/2010US7843740 Method for driving a nonvolatile semiconductor memory device
11/30/2010US7843739 System for verifying non-volatile storage using different voltages
11/30/2010US7843736 Nonvolatile memory device and read method thereof
11/30/2010US7843734 Flash memory device and data I/O operation method thereof
11/30/2010US7843721 Memory cell including an emitter follower and emitter follower sensing scheme and method of reading data therefrom
11/30/2010US7843720 Phase change memory and method discharging bitline
11/30/2010US7843719 Magnetic shift register and data accessing method
11/30/2010US7843718 Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same
11/25/2010WO2010133136A1 Integrated circuit
11/25/2010US20100296347 Method of erasing device including complementary nonvolatile memory devices
11/25/2010US20100296343 Non-Volatile Memory and Semiconductor Device
11/25/2010US20100296338 Nonvolatile memory cell, nonvolatile memory device and method for driving the same
11/25/2010US20100296337 8T SRAM Cell with Four Load Transistors
11/25/2010US20100296336 8T SRAM Cell with Two Single Sided Ports
11/25/2010US20100296335 Asymmetric SRAM Cell with Split Transistors on the Strong Side
11/25/2010US20100296334 6T SRAM Cell with Single Sided Write
11/25/2010US20100296333 8T SRAM Cell With One Word Line
11/25/2010US20100296332 SRAM Cell for Single Sided Write
11/25/2010US20100296331 Sensing resistance variable memory
11/25/2010US20100296330 Semiconductor memory device
11/25/2010US20100296329 Differential Plate Line Screen Test for Ferroelectric Latch Circuits
11/25/2010US20100295903 Ink ejection nozzle arrangement for inkjet printer
11/25/2010DE19812270B4 Signalleitungstreiber und diesen verwendendes Halbleiterspeicherbauelement Signal line driving and this-use semiconductor memory device
11/25/2010DE10297692B4 Geräte und Systeme mit Haftmaterial für programmierbare Vorrichtungen, sowie Verfahren zur Herstellung Devices and systems with pressure sensitive programmable devices and methods of making
11/25/2010DE102009020731A1 Verfahren und Steuereinheit zum Betreiben eines flüchtigen Speichers, Schaltungsanordnung und Fahrtenschreiber Procedures and control unit for operating a volatile memory, circuitry and tachograph
11/25/2010DE102005035641B4 Herstellungsverfahren für eine Speicherzellenanordnung mit gefalteter Bitleitungs-Anordnung und entsprechende Speicherzellenanordnung mit gefalteter Bitleitungs-Anordnung Manufacturing method of a memory cell array having folded bit line arrangement and corresponding memory cell array having folded bit line arrangement
11/25/2010DE102004031959B4 DRAM und Betriebsverfahren DRAM and operating procedures
11/24/2010EP2253015A1 An integrated circuit with a memory matrix with a delay monitoring column
11/24/2010EP1708257B1 Current injection magnetic domain wall moving element
11/24/2010EP1624558B1 Semiconductor integrated circuit device
11/24/2010CN201655330U Phase-change random memory
11/24/2010CN1612482B Delay locked loop and clock generation method thereof
11/24/2010CN101896976A High speed low power magnetic devices based on current induced spin-momentum transfer
11/24/2010CN101894907A Method for manufacturing CuxO-based resistance memory
11/24/2010CN101894854A Phase change memory cells having vertical channel access transistor and memory plane
11/24/2010CN101894853A Phase change random access memory and manufacturing method
11/24/2010CN101894647A Metal/insulator nanogranular material and thin-film magnetic sensor
11/24/2010CN101894584A Implementation method for timing parameters of read-write mode signals of dynamic random access memory
11/24/2010CN101894583A Memory unit capable of saving circuit area
11/24/2010CN101894082A Storage device and smartphone system
11/24/2010CN101170122B Non-volatile multi-bit memory device, its manufacture method and operation method
11/23/2010USRE41950 Multi-state EEPROM having write-verify control circuit
11/23/2010US7840746 Encoding method for flash memories
11/23/2010US7839701 Low voltage operation DRAM control circuits
11/23/2010US7839697 Semiconductor memory device
11/23/2010US7839695 High temperature methods for enhancing retention characteristics of memory devices
11/23/2010US7839691 Bias circuits and methods for enhanced reliability of flash memory device
11/23/2010US7839681 Push-pull FPGA cell
11/23/2010US7839678 NAND type flash memory and write method of the same
11/23/2010US7839676 Magnetic memory device
11/23/2010US7839675 Magnetic memory device and method for reading magnetic memory cell using spin hall effect
11/23/2010US7839674 Programmable matrix array with chalcogenide material
11/23/2010US7839673 Thin-film memory system having thin-film peripheral circuit and memory controller for interfacing with a standalone thin-film memory
11/23/2010US7839672 Phase change memory array circuits and methods of manufacture
11/23/2010US7839671 Resistive memory cell array with common plate
11/23/2010US7839670 F-RAM device with current mirror sense amp
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