Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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01/26/2011 | CN101958146A Memory device and the operation method thereof |
01/26/2011 | CN101958145A Memory module capable of improving operation speed and operation method thereof |
01/26/2011 | CN101593765B Chip integrating various resistance conversion memory modules and method for manufacturing same |
01/26/2011 | CN101587746B Semiconductor device |
01/26/2011 | CN101562229B Resistance-variable storing device |
01/26/2011 | CN101504949B Resistor converting memory and manufacturing method thereof |
01/26/2011 | CN101419836B Phase change RAM |
01/26/2011 | CN101071628B Memory element and memory |
01/26/2011 | CN101031977B Digital magnetic current sensor and logic |
01/25/2011 | US7877581 Networked processor for a pipeline architecture |
01/25/2011 | US7876634 Apparatus and method for adjusting a supply voltage based on a read result |
01/25/2011 | US7876623 Program method with optimized voltage level for flash memory |
01/25/2011 | US7876619 Nonvolatile semiconductor memory device |
01/25/2011 | US7876613 Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards |
01/25/2011 | US7876611 Compensating for coupling during read operations in non-volatile storage |
01/25/2011 | US7876609 Nonvolatile memory device and related methods of operation |
01/25/2011 | US7876608 Method for programming a multilevel phase change memory device |
01/25/2011 | US7876607 Reading threshold switching memory cells |
01/25/2011 | US7876606 Integrated circuit for programming a memory cell |
01/25/2011 | US7876605 Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component |
01/25/2011 | US7876604 Stram with self-reference read scheme |
01/25/2011 | US7876603 Spin current generator for STT-MRAM or other spintronics applications |
01/25/2011 | US7876602 Single-event upset immune static random access memory cell circuit, system, and method |
01/25/2011 | US7876601 Variable sized soft memory macros in structured cell arrays, and related methods |
01/25/2011 | US7876600 SRAM and method of controlling the SRAM |
01/25/2011 | US7876599 Spatial correlation of reference cells in resistive memory array |
01/25/2011 | US7876598 Apparatus and method for determining a memory state of a resistive n-level memory cell and memory device |
01/25/2011 | US7876597 NAND-structured series variable-resistance material memories, processes of forming same, and methods of using same |
01/25/2011 | US7876596 Memory element and method for manufacturing same |
01/25/2011 | US7876108 Real time electronic cell sensing system and applications for cytotoxicity profiling and compound assays |
01/20/2011 | WO2011008654A1 Non-volatile memory cell with non-ohmic selection layer |
01/20/2011 | WO2011008622A1 Vertical non-volatile switch with punch through access and method of fabrication therefor |
01/20/2011 | WO2011008616A1 Static magnetic field assisted resistive sense element |
01/20/2011 | WO2011008615A1 Magnetic stack having reference layers with orthogonal magnetization orientation directions |
01/20/2011 | WO2011006444A1 Storage chip in imaging box for imaging device |
01/20/2011 | WO2010132178A3 Method to calibrate start values for write leveling in a memory system |
01/20/2011 | WO2010123681A3 Protocol for refresh between a memory controller and a memory device |
01/20/2011 | WO2010120918A3 Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same |
01/20/2011 | WO2010106244A3 Hybrid molecular memory with high charge retention |
01/20/2011 | US20110013463 Method of Forming Memory Devices by Performing Halogen Ion Implantation and Diffusion Processes |
01/20/2011 | US20110013454 Nonvolatile semiconductor memory device |
01/20/2011 | US20110013453 Nonvolatile memory device including circuit formed of thin film transistors |
01/20/2011 | US20110013448 Magnetic element with a fast spin transfer torque writing procedure |
01/20/2011 | US20110013447 Semiconductor device |
01/20/2011 | US20110013446 Refresh circuitry for phase change memory |
01/20/2011 | US20110013445 Bias Temperature Instability-Influenced Storage Cell |
01/20/2011 | US20110012215 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
01/20/2011 | US20110012206 Semiconductor memory device |
01/20/2011 | US20110012181 Method of manufacturing semiconductor integrated circuit devcie having capacitor element |
01/20/2011 | DE102008051746A1 Integrierter Schaltkreis mit dotierter Halbleiterleitung mit leitfähiger Verkleidung An integrated circuit comprising doped semiconductor conduction with conductive cladding |
01/19/2011 | EP2276175A1 Synchronous mirror delay (SMD) circuit and method including a ring oscillator for timing coarse and fine delay intervals technical field |
01/19/2011 | EP2276035A2 Multi-layer memory chip with interlayer connections |
01/19/2011 | EP2276034A2 Self-referenced magnetic random access memory cell |
01/19/2011 | EP2276033A1 A high speed dram architecture with uniform access latency |
01/19/2011 | EP2275943A1 Method and apparatus for coordinating memory operations among diversely-located memory components |
01/19/2011 | EP2275914A2 Non-volatile memory control |
01/19/2011 | EP2274746A1 Non-volatile multilevel memory with adaptive setting of reference voltage levels for program, verify and read |
01/19/2011 | EP1678722B1 Programming method based on the behavior of non-volatile memory cells |
01/19/2011 | CN101952957A Memory device with local data lines and method of making and operating the same |
01/19/2011 | CN101950583A Semiconductor memory device having layout area reduced |
01/19/2011 | CN101452739B Semiconductor memory |
01/19/2011 | CN101354908B Data read-in control circuit for bolt-button type magnetic storage and data read-in method thereof |
01/19/2011 | CN101335330B Memory device with tungsten compound memory unit and processing method thereof |
01/19/2011 | CN101183681B Bistable resistance random access memory structure for enhanced retention |
01/19/2011 | CN101167136B Magnetic memory system using MRAM-sensor |
01/19/2011 | CN101110268B Multiple time programmable (MTP) PMOS non-volatile memory device with thick gate oxide |
01/18/2011 | USRE42040 Switching element method of driving switching element rewritable logic integrated circuit and memory |
01/18/2011 | US7872922 Memory system and method of writing into nonvolatile semiconductor memory |
01/18/2011 | US7872915 Nonvolatile memory device and reading method thereof |
01/18/2011 | US7872914 Monitor structure for monitoring a change of a memory content |
01/18/2011 | US7872910 Non-volatile semiconductor storage system |
01/18/2011 | US7872908 Phase change memory devices and fabrication methods thereof |
01/18/2011 | US7872907 Semiconductor device |
01/18/2011 | US7872906 Unidirectional-current magnetization-reversal magnetoresistance element and magnetic recording apparatus |
01/18/2011 | US7872905 Method and apparatus for write enable and inhibit for high density spin torque three dimensional (3D) memory arrays |
01/18/2011 | US7872904 Magnetic random access memory |
01/18/2011 | US7872903 Volatile memory elements with soft error upset immunity |
01/18/2011 | US7872902 Integrated circuit with bit lines positioned in different planes |
01/18/2011 | US7872901 Programmable-resistance memory cell |
01/18/2011 | US7872900 Correlated electron memory |
01/18/2011 | US7872899 Semiconductor memory device |
01/18/2011 | US7872895 Semiconductor device with non-volatile memory and random access memory |
01/18/2011 | US7872894 SRAM memory cell protected against current or voltage spikes |
01/13/2011 | WO2011005809A1 Non-volatile memory array with resistive sense element block erase and uni-directional write |
01/13/2011 | WO2011005427A1 Pointer based column selection techniques in non-volatile memories |
01/13/2011 | WO2011005402A1 Optimized page programming order for non-volatile memory |
01/13/2011 | WO2011003594A1 Organic-electronic circuit |
01/13/2011 | WO2010117911A3 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
01/13/2011 | US20110007596 Low-Leakage Power Supply Architecture for an SRAM Array |
01/13/2011 | US20110007581 Current Cancellation for Non-Volatile Memory |
01/13/2011 | US20110007565 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program |
01/13/2011 | US20110007561 Self-referenced magnetic random access memory cells |
01/13/2011 | US20110007560 Spin polarised magnetic device |
01/13/2011 | US20110007559 Nanowire and memory device using it as a medium for current-induced wall displacement |
01/13/2011 | US20110007558 Modular magnetoresistive memory |
01/13/2011 | US20110007557 Semiconductor memory device |
01/13/2011 | US20110007556 SRAM Architecture |
01/13/2011 | US20110007555 Resistance change element, semiconductor memory device, manufacturing method and driving method thereof |
01/13/2011 | US20110007554 Semiconductor device |
01/13/2011 | US20110007553 Nonvolatile storage device and method for writing into memory cell of the same |