Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2011
04/12/2011US7924613 Data storage in analog memory cells with protection against programming interruption
04/12/2011US7924611 Page buffer circuit with reduced size and methods for reading and programming data with the same
04/12/2011US7924610 Method for conducting over-erase correction
04/12/2011US7924609 Spin valve element driving method and spin valve element
04/12/2011US7924608 Forced ion migration for chalcogenide phase change memory device
04/12/2011US7924607 Magnetoresistance effect element and magnetoresistive random access memory using the same
04/12/2011US7924606 Memory controller and decoder
04/12/2011US7924605 Semiconductor memory device
04/12/2011US7924604 Stacked memory cell for use in high-density CMOS SRAM
04/12/2011US7924602 Method to program a memory cell comprising a carbon nanotube fabric element and a steering element
04/12/2011US7924601 Resistive memory and data write-in method
04/12/2011US7924600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
04/12/2011US7924599 Non-volatile memory circuit using ferroelectric capacitor storage element
04/12/2011US7924313 Camera device incorporating a print roll validation apparatus
04/12/2011US7924058 Nonvolatile programmable logic circuit
04/12/2011US7923756 Metal oxide semiconductor (MOS) device comprising a buried region under drain
04/12/2011US7923263 Non-volatile resistance switching memory
04/12/2011US7922298 Ink jet printhead with displaceable nozzle crown
04/12/2011US7922293 Printhead having nozzle arrangements with magnetic paddle actuators
04/07/2011US20110082964 Partitioning process to improve memory cell retention
04/07/2011US20110080785 Semiconductor memory device, and multi-chip package and method of operating the same
04/07/2011US20110080783 Semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell
04/07/2011US20110080782 Write current compensation using word line boosting circuitry
04/07/2011US20110080781 Phase change memory device and control method
04/07/2011US20110080780 Method for Programming a Multilevel Phase Change Memory Device
04/07/2011US20110080779 Semiconductor device including resistance storage element
04/07/2011US20110080778 Phase change memory device
04/07/2011US20110080777 Adaptive Wordline Programming Bias of a Phase Change Memory
04/07/2011US20110080776 Semiconductor memory device having diode cell structure
04/07/2011US20110080775 Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device
04/07/2011US20110080774 Semiconductor device
04/07/2011US20110080773 Circuit for generating adjustable timing signals for sensing a self-referenced mram cell
04/07/2011US20110080772 Body Controlled Double Channel Transistor and Circuits Comprising the Same
04/07/2011US20110080771 Dram positive wordline voltage compensation device for array device threshold voltage and voltage compensating method thereof
04/07/2011US20110080770 Method of programming variable resistance element and nonvolatile storage device
04/07/2011US20110080769 Spatial Correlation of Reference Cells in Resistive Memory Array
04/07/2011US20110080768 Write current compensation using word line boosting circuitry
04/07/2011US20110080767 Integrated circuit including four layers of vertically stacked embedded re-writeable non-volatile two-terminal memory
04/07/2011US20110080766 Resistive Memory Device and Manufacturing Method Thereof and Operating Method Thereof
04/07/2011US20110080763 Method for contemporaneous margin verification and memory access for memory cells in cross-point memory arrays
04/07/2011DE19782077B4 Verfahren und Vorrichtung zum Korrigieren eines Mehrpegelzellenspeichers durch Verwendung fehlerlokalisierender Codes Method and apparatus for correcting a multi-level cell memory by using codes fehlerlokalisierender
04/07/2011DE102010040116A1 Speichersteuerung mit einstellbarer Senderimpedanz Memory controller with adjustable transmitter impedance
04/07/2011DE102007024955B4 Register mit prozess-, versorgungsspannungs- und temperaturschwankungsunabhängigem Laufzeitverzögerungspfad Register with process, on voltage and temperature fluctuation independent propagation delay path
04/07/2011DE102004041023B4 Integrierte Schaltung und zugehöriger Halbleiterspeicherbaustein An integrated circuit and associated semiconductor memory device
04/07/2011DE10131007B4 Vorrichtung zum Ansteuern einer Speicherzelle eines Speicherbausteins und Speicherbaustein An apparatus for driving a memory cell of a memory module and memory module
04/06/2011EP2306540A1 Spin valve recording element and storage device
04/06/2011EP2306510A1 Magnetic memory element and its driving method and nonvolatile memory device
04/06/2011EP2306461A2 Memory with output control
04/06/2011EP2306460A2 Concurrent flash memory access
04/06/2011EP2304736A1 Correcting for over programming non-volatile storage
04/06/2011EP2304735A1 Programming and selectively erasing non-volatile storage
04/06/2011EP2304734A1 Selective erase operation for non-volatile storage
04/06/2011EP1987581B1 Current driven memory cells having enhanced current and enhanced current symmetry
04/06/2011CN1801393B 半导体集成电路 The semiconductor integrated circuit
04/06/2011CN1790547B IC, CMOS, IC chip, CMOS SRAM unit and method for accessing data in memory array
04/06/2011CN1716442B Memory device with modified refreshing operation
04/06/2011CN1702769B Semiconductor memory device and method for controlling semiconductor memory device
04/06/2011CN102007544A Method for modeling a magnetic tunnel junction with spin-polarized current writing
04/06/2011CN102007543A Recording method for magnetic memory device
04/06/2011CN102007542A Method of making record in magnetic memory device
04/06/2011CN102007541A Phase change memory adaptive programming
04/06/2011CN102005453A Three dimensional structure memory
04/06/2011CN102005241A Semiconductor storage device and its control method
04/06/2011CN101593810B Nano structure quick-switch memristor and manufacturing method thereof
04/06/2011CN101572120B Word line driver used for dynamic random access memory and drive method thereof
04/06/2011CN101369452B Circuit and method for reducing SRAM power consumption
04/06/2011CN101364436B Non-volatile memory and method for driving the same
04/06/2011CN101268519B Programming non-volatile memory with self-adjusting maximum program loop
04/06/2011CN101266833B Semiconductor memory, memory controller, system, and operating method of semiconductor memory
04/06/2011CN101241750B Memory system and data transmission method
04/06/2011CN101231881B Shared global word line magnetic random access memory
04/06/2011CN101114695B Memory element and semiconductor device
04/06/2011CN101023495B Read approach for multi-level virtual ground memory
04/05/2011US7920438 Semiconductor memory device having the operating voltage of the memory cell controlled
04/05/2011US7920426 Non-volatile memory programmable through areal capacitive coupling
04/05/2011US7920422 All-bit-line erase verify and soft program verify
04/05/2011US7920418 Nonvolatile memory devices and methods of forming the same
04/05/2011US7920417 Semiconductor memory device
04/05/2011US7920416 Increased magnetic damping for toggle MRAM
04/05/2011US7920415 Memory cell device and programming methods
04/05/2011US7920414 Asymmetric-threshold three-terminal switching device
04/05/2011US7920413 Apparatus and method for writing data to phase-change memory by using power calculation and data inversion
04/05/2011US7920412 Magnetic random access memory and method of manufacturing the same
04/05/2011US7920411 Converting SRAM cells to ROM cells
04/05/2011US7920410 Memory elements with increased write margin and soft error upset immunity
04/05/2011US7920409 SRAM cell with intrinsically high stability and low leakage
04/05/2011US7920408 Resistance change nonvolatile memory device
04/05/2011US7920407 Set and reset detection circuits for reversible resistance switching memory material
04/05/2011US7920406 Increasing effective transistor width in memory arrays with dual bitlines
04/05/2011US7920405 Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices
04/05/2011US7920404 Ferroelectric memory devices with partitioned platelines
04/05/2011US7920402 Resistance variable memory apparatus
03/2011
03/31/2011WO2011037710A2 Modularized three-dimensional capacitor array
03/31/2011WO2011037143A1 Magnetic memory
03/31/2011WO2011036817A1 Magnetic memory
03/31/2011WO2011036228A1 A flash memory device and control method
03/31/2011US20110078366 Semiconductor device with non-volatile memory and random access memory
03/31/2011US20110076820 Semiconductor integrated circuit device and process for manufacturing the same
03/31/2011US20110075504 Dual Beta Ratio SRAM
03/31/2011US20110075488 Non-Volatile Semiconductor Memory