Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
09/1998
09/29/1998US5814290 Silicon nitride nanowhiskers and method of making same
09/29/1998US5814149 Vapor deposition on platinum substrate
09/29/1998US5814148 Method for preparing molten silicon melt from polycrystalline silicon charge
09/23/1998EP0866508A1 Method of preparing rare earth-barium-cuprates superconductors
09/23/1998EP0866151A1 Crystal holding apparatus
09/23/1998EP0866150A1 Apparatus and process for pulling a single crystal
09/23/1998EP0866040A1 Manganese oxide material having Mn03 as a matrix
09/23/1998EP0865514A1 Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide
09/22/1998US5811916 Field emission devices employing enhanced diamond field emitters
09/22/1998CA2037432C Method of and apparatus for preparing oxide superconducting film
09/17/1998WO1998040544A1 Lanthanum gallium silicate disc and its preparation method
09/17/1998DE19754475A1 Layered material with textured buffer layer and oriented thin film
09/16/1998EP0865088A2 Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same
09/16/1998EP0864672A2 Molecular beam epitaxy method
09/16/1998EP0864671A1 A process and an apparatus for producing a composite oxide single crystal body
09/16/1998EP0864669A2 Single crystal growth method
09/16/1998EP0864538A1 Manganese oxide material having Mn03 as a matrix
09/16/1998EP0712382B1 Directionally solidified eutectic reinforcing fibers
09/16/1998CN1193054A Method for making silicon single crystal and used seed crystal
09/16/1998CN1039838C Preparation for organic inclusion compound large crystal with second-order nonlinear optical effect
09/15/1998US5807433 Multilayer system comprising a diamond layer, an interphase and a metallic substrate, and a method for obtaining these layers
09/15/1998US5807432 Process for producing diamond covered member
09/11/1998WO1998039804A1 Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
09/11/1998WO1998039502A1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE1+xBa2-xCu3O¿7-δ?
09/11/1998CA2283334A1 Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
09/10/1998DE19801439A1 Silicon epitaxial layer growth apparatus
09/09/1998EP0863231A1 A process for dicing a preform made of an oxide single crystal, and a process for producing functional devices
09/09/1998EP0863117A2 A process for forming a microstructure in a substrate of a ferroelectric single crystal
09/09/1998CN1192787A Electrically tunable coatings
09/09/1998CN1192538A Specular surface body
09/08/1998US5803967 Repeatedly cycling between first and second growth parameters; etching at intermediate stages to remove defects
09/03/1998WO1998038675A1 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
09/03/1998DE19808762A1 Low anisotropy high temperature superconductor
09/03/1998DE19708711C1 Verfahren zur Züchtung von Einkristallen von Hochtemperatursupraleitern aus Seltenerd-Kupraten der Form SE¶1¶¶+¶¶x¶Ba¶2¶¶-¶¶x¶Cu¶3¶0¶7¶¶-¶¶delta¶ und nach dem Verfahren hergestellte Kristalle Method for growing single crystals of high-temperature superconductors from rare-earth cuprates the form SE¶1¶¶ + ¶¶x¶Ba¶2¶¶-¶¶x¶Cu¶3¶0¶7¶¶-¶¶delta¶ and after method produced crystals
09/02/1998EP0861928A1 Effusion cell for Si and molecular beam epitaxy system
09/02/1998EP0778837B1 Preparation of metalorganic compounds
09/02/1998CN2289806Y Carrier crystal stand and its seed crystal for potassium dihydrogen phosphate large single crystal growing
09/02/1998CN1191904A Self-modulating laser crystal Cr(4+),Yb(3+)Y3Al5O12
09/01/1998US5801875 Garnet
09/01/1998US5800612 Single-crystal semiconductor pulling apparatus
08/1998
08/26/1998EP0859879A1 A method for epitaxially growing objects and a device for such a growth
08/26/1998EP0800592B1 Method of producing boron-doped monocrystalline silicon carbide
08/26/1998EP0746634B1 Single crystal nickel-based superalloy
08/26/1998CN1191580A Process for for producing silicon carbide monocrystals
08/25/1998US5798312 Silver and gold alloy matrix cladding containing flat oxide bodies
08/25/1998US5798143 CVD process for making a hollow diamond tube
08/25/1998CA2128590C Direct mombe and movpe growth of ii-vi materials on silicon
08/18/1998US5795383 Method and mechanism for lifting gas flow-guide cylinder of a crystal pulling apparatus
08/18/1998US5795381 SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon
08/12/1998EP0857224A2 Durable plasma treatment apparatus and method
08/11/1998US5792592 Photosensitive liquid precursor solutions and use thereof in making thin films
08/11/1998US5792258 High-frequency induction heater and method of producing semiconductor single crystal using the same
08/11/1998US5792257 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
08/11/1998US5792255 Manufacturing method of single crystal
08/11/1998US5792254 Production of diamond film
08/11/1998CA2090737C Apparatus and process for the preparation of silver nitrate
08/06/1998WO1998033961A1 Apparatus for growing large silicon carbide single crystals
08/05/1998EP0856880A2 A method for the heat treatment of group II-VI semiconductors
08/05/1998EP0856600A1 LiGa02 single crystal, single-crystal substrate, and method of manufacturing the same
08/04/1998US5789273 Method for fabricating compound semiconductor laser
08/04/1998US5788764 Potassium titanium phosphate
08/04/1998US5788718 Apparatus and a method for growing a single crystal
07/1998
07/30/1998WO1998033220A1 Relaxor ferroelectric single crystals for ultrasound transducers
07/30/1998WO1998033219A1 p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
07/30/1998DE19702311A1 Growth substrate with diamond or diamond-like carbon growth nuclei
07/29/1998EP0855455A1 Crucible for single crystal growth, method for its manufacture and its application
07/29/1998EP0349633B1 Polysilicon thin film process
07/29/1998CN1188822A Method for preparing neodymium barium copper oxygen superconductive monocrystal
07/29/1998CN1188821A Process and apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
07/28/1998US5786068 Electrically tunable coatings
07/28/1998US5785871 Process for minute processing of diamonds
07/28/1998US5785758 Single crystal growing apparatus
07/28/1998US5785757 Apparatus for fabricating a single-crystal
07/28/1998US5785753 Single crystal manufacturing method
07/28/1998US5785752 Measuring temperature of crystal; cutting to thickness
07/28/1998CA2055675C Method for forming crystal article
07/23/1998CA2227686A1 A method for the heat treatment of ii-vi semiconductors
07/22/1998EP0854371A1 Specular surface body
07/22/1998EP0854211A1 Method of manufacturing silicon monocrystal, and seed crystal used in the method
07/22/1998EP0854209A1 Process to produce silicon single crystal and heating apparatus for this process
07/22/1998EP0853690A2 Silicon carbide gemstones
07/22/1998EP0853689A1 A method for epitaxially growing objects and a device for such a growth
07/15/1998EP0852575A1 Silicon nitride nanowhiskers and method of making same
07/15/1998EP0737258A4 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
07/14/1998US5780322 Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser
07/14/1998US5780163 A protective covering to prevent examination and analysis by competitors comprising silica ceramic, a silicon carbide coating, an opaque material-filled porous silica ceramic, a metal layer and another opaque silica ceramic
07/14/1998US5779822 Having a carbide phase produced by aging heat treatment of single crystal austenitic phase; nuclear reactor cores; nuclear fusion reactors; stress corrosion cracking resistance; high strength; durability
07/14/1998US5779792 Single crystal pulling apparatus
07/14/1998US5779791 Process for controlling thermal history of Czochralski-grown silicon
07/14/1998US5779790 Method of manufacturing a silicon monocrystal
07/08/1998EP0852283A2 Polycrystalline diamond cutting element with diamond ridge pattern
07/08/1998EP0852097A1 Electronic program guide schedule localization system and method
07/08/1998CN1187278A Electronic program guide schedule localization system and method
07/07/1998US5776553 Method for depositing diamond films by dielectric barrier discharge
07/07/1998US5776552 Gas mixture of hydrogen, inert with carbon compound and oxygen
07/07/1998CA2064169C Method of forming compound oxide superconducting thin film
07/07/1998CA2054050C Method and apparatus for making grit and abrasive media
07/01/1998EP0851043A1 Optical single crystal film, process for producing the same and optical element comprising the same
07/01/1998EP0851040A1 Surface treatment apparatus using gas jet
06/1998
06/30/1998US5773830 CVD diamond radiation detector