Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/1998
12/15/1998US5849669 High temperature superconducting Josephson device and method for manufacturing the same
12/15/1998US5849228 Segmented substrate for improved arc-jet diamond deposition
12/15/1998US5849080 Apparatus for producing polycrystalline semiconductors
12/10/1998WO1998055671A1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
12/10/1998DE19822783A1 Single crystal manganese-zinc ferrite material
12/09/1998EP0605650B1 Radio frequency automatic identification system
12/09/1998CN1201082A Sulfocyanic-acid-matches type crystal material, preparation method and use thereof
12/09/1998CN1201081A Method for preparing gallium nitride crystal
12/08/1998US5846323 Crystal manufacturing apparatus
12/08/1998US5846318 Method and system for controlling growth of a silicon crystal
12/08/1998CA1340168C Method of aligning grains of a multi-grained superconducting material
12/02/1998EP0881667A2 A method for manufacturing compound semiconductor epitaxial wafer
12/02/1998EP0842119A4 Nickel-manganese oxide single crystals
12/02/1998EP0777762B1 Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same
12/02/1998CN1200351A Single crystals of lead tungstate
12/02/1998CN1041004C Ytterbium mixed yttrium vanadate laser crystal and its prepn. method
12/02/1998CN1040969C Composite metal oxide powder and process for producing same
12/02/1998CN1040955C Method for producing indicia on diamonds
12/01/1998US5843229 Crystal holding apparatus
12/01/1998US5843227 Crystal growth method for gallium nitride films
12/01/1998US5843224 Composite structure comprising a semiconductor layer arranged on a diamond or diamond-like layer and process for its production
11/1998
11/26/1998WO1998053125A1 Single crystal silicon carbide and process for preparing the same
11/25/1998EP0880073A1 Diamond films suitable for x-ray lithography and their manufacture
11/25/1998EP0879904A1 Method and apparatus for producing single-crystalline diamond
11/25/1998EP0879305A1 Growth of colorless silicon carbide crystals
11/24/1998US5840117 Method for surface flattening a crystal substrate
11/24/1998US5840116 Crystallizing the single silicon crystal with uniform oxygen concentration distribution by melting, applying a low magnetic field
11/24/1998US5840115 Single crystal growth method
11/24/1998CA2104141C Synthesis of diamond by combustion method
11/18/1998EP0878847A1 Ferroelectric material, nonvolatile memory device and their manufacturing methods
11/18/1998EP0692037B1 DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS
11/18/1998CN1199105A Growth technology of thallium doped cesium iodide crystal by antivacuum fall
11/17/1998US5838058 Semiconductor substrate and semiconductor device employing the same
11/17/1998US5837357 Eliminating head smear
11/17/1998US5837053 Metal oxide
11/11/1998EP0877100A1 Process for fabricating solid-solution of layered perovskite materials
11/11/1998EP0852575A4 Silicon nitride nanowhiskers and method of making same
11/10/1998US5835257 Magneto-optical element and optical magnetic field sensor using the same
11/10/1998US5834374 Method for controlling tensile and compressive stresses and mechanical problems in thin films on substrates
11/10/1998US5834361 Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same
11/10/1998US5834325 Light emitting device, wafer for light emitting device, and method of preparing the same
11/10/1998US5834322 Heat treatment of Si single crystal
11/10/1998US5833750 Crystal pulling apparatus
11/10/1998US5833748 Method of and apparatus for obtaining fissure-free crystals
11/05/1998WO1998049378A1 Method for single crystal growth
11/04/1998EP0875990A1 Magnetostatic wave device
11/04/1998EP0875778A1 Image-focusing optical system for ultraviolet laser
11/04/1998EP0875607A1 Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same
11/04/1998CN1197998A Epitaxial chip and its manufacture
11/04/1998CN1197853A Single crystal growth method
11/03/1998US5830829 Yttrium-barium-copper-oxide, multizonal
11/03/1998US5830270 Electrons
11/03/1998US5829541 Polycrystalline diamond cutting element with diamond ridge pattern
11/03/1998CA2099358C Single crystal nickel-based superalloy
10/1998
10/28/1998EP0874069A1 Detecting method of impurity concentration in a crystal, method and apparatus for pulling up a single-crystal
10/28/1998CN1197212A Method of analyzing semiconductor ingot
10/28/1998CN1197128A Device and method for pulling single crystal
10/27/1998US5827802 Method of depositing monomolecular layers
10/27/1998US5827798 Suspending whiskers in solvent, placing in container, desolventizing, press forming, heat treating
10/27/1998US5827773 Depositing microcrystalline film having amorphous matter, microcrystallites embedded therein, annealing; forms uniform crystal grains
10/27/1998US5827366 Czochralski growing apparatus suppressing growth striation of long large-diameter monocrystalline silicon
10/22/1998WO1998046813A1 Etching method
10/22/1998WO1998046812A1 Process for obtaining diamond layers by gaseous-phase synthesis
10/20/1998US5825053 Heterostructure III-V nitride semiconductor device including InP substrate
10/20/1998US5824368 From seed crystals and fullerenes, low temperature and pressure
10/20/1998US5824367 Method for the deposition of diamond film on an electroless-plated nickel layer
10/20/1998CA2100132C Method of producing synthetic diamond
10/15/1998WO1998045511A1 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN
10/15/1998WO1998045510A1 Low defect density, self-interstitial dominated silicon
10/15/1998WO1998045509A1 Low defect density silicon
10/15/1998WO1998045508A1 Low defect density, vacancy dominated silicon
10/15/1998WO1998045507A1 Low defect density, ideal oxygen precipitating silicon
10/14/1998EP0871042A1 Radio frequency automatic identification system
10/14/1998CN1196018A Marking diamond
10/14/1998CN1195717A Alumoberyl family decorative jewel grouth method and its device
10/13/1998US5820672 OISF control in czochralski-grown crystals
10/13/1998US5820649 Method of and apparatus for continuously producing a solid material
10/07/1998EP0869203A2 Fluoride crystal, optical article, and production method
10/07/1998EP0869202A2 Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method
10/07/1998EP0868753A2 Layer sequence with at least one epitaxial, non-c-axis oriented htsc thin film or with a layer of a structure crystallographically comparable to htsc
10/07/1998EP0728044A4 Process and apparatus for water-based plasma cvd of diamond films
10/06/1998US5817173 Method for making spherical crystals
10/06/1998US5817172 Preparation of oxide crystals
10/06/1998CA2143265C Method of forming single-crystalline thin film
10/06/1998CA2022359C Process for preparing superconducting thin films
10/06/1998CA2022358C Process for preparing superconducting thin films
10/01/1998WO1998042896A1 Process of diamond growth from c¿70?
10/01/1998WO1998042620A1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film
10/01/1998WO1998042438A1 Catalysts with modified molybdenum oxycarbide base prepared from oriented molybdenum and method for producing same
10/01/1998CA2284883A1 Catalysts with modified molybdenum oxycarbide base prepared from oriented molybdenum and method for producing same
10/01/1998CA2283268A1 Process of diamond growth from c70
09/1998
09/30/1998EP0867952A1 Piezoelectric element and process for producing the same
09/30/1998EP0867951A1 Method for preparing oxide superconductors
09/30/1998EP0867537A1 Method for the production of low-cost isotopically engineered diamond anvils
09/30/1998EP0867536A1 Low-cost isotopically engineered diamond amvils
09/30/1998EP0867534A2 Semiconductor single crystal manufacturing apparatus
09/30/1998EP0867531A1 Single crystal production apparatus and process
09/30/1998EP0772699B1 Cvd process for the production of diamond-phase carbon tubes
09/30/1998CN1194623A Silicon carbide gemstones
09/29/1998US5815520 light emitting semiconductor device and its manufacturing method
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