Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
08/2010
08/18/2010CN101805923A Gallium doped solar silicon wafer and production process thereof
08/18/2010CN101404248B GaN single-crystal substrate and method for producing GaN single crystal
08/18/2010CN101311381B ZrS3 and ZrS2 nano-belts and method for making same
08/18/2010CN101307486B Electric plating synthesis method for diamond under atmospheric pressure
08/18/2010CN101307485B Nitrogen source ionization method and device for semiconductor material vapor deposition growth system
08/18/2010CN101245490B Flux growth method for CsLiB6O10 crystal
08/17/2010USRE41503 Method of producing plasma display panel with protective layer of an alkaline earth oxide
08/17/2010US7777403 Photonic-crystal filament and methods
08/17/2010US7777303 Semiconductor-nanocrystal/conjugated polymer thin films
08/12/2010WO2010090262A1 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer
08/12/2010WO2010089928A1 GaN SUBSTRATE, METHOD FOR MANUFACTURING GaN SUBSTRATE, METHOD FOR MANUFACTURING GaN LAYER BONDED SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
08/12/2010WO2009146384A9 Hexagonal wurtzite single crystal
08/12/2010US20100203350 Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals
08/11/2010EP2216428A1 PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS
08/11/2010EP2215290A1 Reduction of air pockets in silicon crystals by avoiding the introduction of nearly insoluble gases into the melt
08/11/2010EP1397201B2 Reaction vessel for producing samples
08/11/2010CN201545932U Silica crucible dedicated for preparation of mercury indium telluride (MIT) single crystal
08/11/2010CN101802979A Compound semiconductor substrate, process for producing compound semiconductor substrate, and semiconductor device
08/11/2010CN101802274A AlN crystal and method for growing the same
08/11/2010CN101802273A Epitaxial SIC single crystal substrate and method for manufacturing epitaxial SIC single crystal substrate
08/11/2010CN101802271A Use of acid washing to provide purified silicon crystals
08/11/2010CN101801846A Process for production of dispersion of fluorinated nano diamond
08/11/2010CN101799609A BaMgBO3F non-linear optical crystal, preparation method and applications thereof
08/11/2010CN101798707A BaMgBO3F non-linear optical crystal, preparation method and applications thereof
08/11/2010CN101798706A Method for extending and growing graphene on SiC substrate
08/11/2010CN101798069A Method for preparing rope-form tellurium nanocrystals
08/11/2010CN101235539B Epitaxy growing method for La1-xCaxMnO3 single crystal thin film
08/11/2010CN101225547B Growth chamber and gallium nitride material growth method
08/10/2010US7771693 etching away by reactive ion etching using O2 and CF4, prior to single crystal growth, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing the work-affected layers caused by mechanical polishing, then growing a single crystal
08/10/2010US7771530 Process and apparatus for producing a silicon single crystal
08/05/2010WO2010088046A1 Seed layers and process of manufacturing seed layers
08/05/2010WO2010087518A1 Epitaxial silicon carbide single crystal substrate and mehtod for producing same
08/05/2010WO2010086378A1 Method for forming nanowires and associated method for manufacturing an optical component
08/05/2010US20100197069 Process for producing layered member and layered member
08/05/2010US20100192841 Reinforcing method of silica glass substance and reinforced silica glass crucible
08/05/2010DE112008001201T5 Verfahren zum Wachsenlassen eines Silizium-Einkristalls A method of growing a silicon single crystal
08/05/2010DE102007035756B4 Verfahren zur Herstellung von Nichteisenmetall-Blöcken A process for the production of non-ferrous metal-blocks
08/04/2010EP2212913A1 Systems and methods for preparation of epitaxially textured thick films
08/04/2010EP1423259B1 parting method for forming free-standing (al,ga,in)n article
08/04/2010CN201538830U 18-pair-of-stick polycrystalline silicon reducing furnace
08/04/2010CN201538829U Structure for detecting silicon leakage of polysilicon ingot casting equipment
08/04/2010CN101796621A Single crystal thin film of organic semiconductor compound and method for producing the same
08/04/2010CN101796227A Process for growing single-crystal silicon carbide
08/04/2010CN101796226A Methods and apparatuses for manufacturing cast silicon from seed crystals
08/04/2010CN101796225A Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using the seed crystal
08/04/2010CN101792932A Method for preparing ultra-fine calcium sulfate crystal whisker by using phosphogypsum
08/04/2010CN101792931A Metal sulfide single crystal material and preparation method
08/04/2010CN101792930A Method for preparing lead sulfide thin films with (200) preferred orientation
08/04/2010CN101792929A Group iii nitride crystal substrate and semiconductor device
08/04/2010CN101792928A High temperature piezocrystal of melilite structure and preparation method and application thereof
08/04/2010CN101792927A Wafer heat treating method
08/04/2010CN101792926A Method for growing terbium-aluminum garnet crystal by using guide die pulling method
08/04/2010CN101311344B Polysilicon film preparation with controllable crystal particle dimension and detection device
08/03/2010US7767260 Semiconductors; light emitting diodes; salt formation using anion and cation
07/2010
07/29/2010WO2010084878A1 Electrically conductive gaas crystal, electrically conductive gaas crystal substrate, and processes for producing those materials
07/29/2010WO2010084863A1 Apparatus for producing nitride semiconductor crystal, method for producing nitride semiconductor crystal, and nitride semiconductor crystal
07/29/2010WO2010084682A1 Group 3b nitride crystal
07/29/2010WO2010084681A1 Group iiib nitride crystal manufacturing method
07/29/2010WO2010084676A1 Apparatus for producing group 3b nitride crystal plate
07/29/2010WO2010084675A1 Group 3b nitride crystal plate
07/29/2010WO2010084036A1 Component having varying structures and method for production
07/29/2010WO2010062419A3 Diamond bodies grown on sic substrates and associated methods
07/29/2010WO2010042226A3 Production of silicon
07/29/2010WO2009149299A8 Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
07/29/2010US20100190322 Compound semiconductor substrate
07/28/2010EP2210689A1 Directionally solidified elongated component with elongated grains of differing widths
07/28/2010EP2210688A1 Component with different structures and method for production of same
07/28/2010EP2210660A1 Process for charging liquefied ammonia, process for production of nitride crystals, and reactor for growth of nitride crystals
07/28/2010CN1908251B Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
07/28/2010CN101790593A Nickel base superalloy compositions being substantially free of rhenium and superalloy articles
07/28/2010CN101790592A Low rhenium nickel base superalloy compositions and superalloy articles
07/28/2010CN101788786A Thermal analysis control method of electric arc furnace for preparing magnesium oxide crystals
07/28/2010CN101787568A Preparation process of intrinsic gettering structure of germanium-doped and heavy phosphorus-doped straight pulling monocrystalline silicon wafer
07/28/2010CN101787565A Polycrystalline germanium-alloyed silicon and a method for the production thereof
07/28/2010CN101787564A Synthesis method of platy-ZnSe fluorescent nano monocrystal
07/28/2010CN101787563A Method and device for removing impurities of phosphorus and boron by induction and electronic beam melting
07/28/2010CN101787562A Connected vacuum high-temperature disproportionated reaction device
07/28/2010CN101787559A Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition
07/28/2010CN101787558A Fluxing agent growing method of K2Al2B2O7 crystal
07/28/2010CN101786626A Method for comprehensively utilizing heat energy of high-temperature water of reduction furnace and/or hydrogenation furnace
07/28/2010CN101319374B Optical-level single-sided long quartz crystal growth technique
07/28/2010CN101148781B Process for preparing zinc oxide ferro-electricity film
07/27/2010US7763113 Photocatalyst material and method for preparation thereof
07/22/2010WO2010082574A1 Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal
07/22/2010WO2010082366A1 Compound semiconductor substrate, semiconductor device, and process for producing the semiconductor device
07/22/2010WO2010082358A1 Gallium nitride substrate, method for manufacturing gallium nitride substrate and semiconductor device
07/22/2010WO2010082351A1 Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate
07/22/2010WO2010082267A1 Inside reforming substrate for epitaxial growth; crystal film forming element, device, and bulk substrate produced using the same; and method for producing the same
07/22/2010WO2010082029A1 High pressure high temperature (hpht) method for the production of single crystal diamonds
07/22/2010DE102009004751A1 Thermisch isolierte Anordnung und Verfahren zur Herstellung eines SiC-Volumeneinkristalls Thermally insulated arrangement and method for manufacturing a SiC bulk single
07/21/2010EP2208810A1 Method for solidifying a semiconductor with adding charges of a doped semiconductor during the crystallisation
07/21/2010EP2208526A1 An autosynthesizer for the controlled synthesis of nano- and sub-nanostructures
07/21/2010EP2207910A1 Method for the production of semiconductor ribbons from a gaseous feedstock
07/21/2010CN201530877U Thermal field device for producing a 18 inch silicon signal-crystal for solar energy using a vertical pulling method
07/21/2010CN101781796A Simple method for preparing hydroxyapatite nanocrystals
07/21/2010CN101781795A Silicon leakage prevention device for polysilicon ingot furnace or polysilicon purification furnace
07/21/2010CN101781794A Method for preparing low-doping rate polycrystalline silicon films
07/21/2010CN101781791A Method for removing impurities in single crystal rod straight pulling process
07/21/2010CN101781637A Human 5,10-methenyltetrahydrofolate, and crystallization methods, crystals and application of composites thereof
07/21/2010CN101780956A Method and device for preparing high purity polysilicon particles by using fluid bed reactor
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