Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
09/2010
09/15/2010CN101831695A Silicon single crystal growth device
09/15/2010CN101831694A Method for depositing group III/V compounds
09/15/2010CN101831693A Method for growing zinc oxide film material
09/15/2010CN101831690A Primary dust suction and storage tank of crystal pulling furnace
09/15/2010CN101471246B Method for manufacturing compound substrate of semiconductor
09/15/2010CN101281863B Method for preparing large scale nonpolar surface GaN self-supporting substrate
09/14/2010US7795707 High voltage switching devices and process for forming same
09/14/2010US7794543 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
09/14/2010US7794539 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
09/10/2010WO2010101200A1 Crucible, apparatus, and method for producing silicon carbide single crystals
09/10/2010WO2010101016A1 Method for manufacturing silicon carbide semiconductor device
09/10/2010WO2010100847A1 Device for crystallizing biopolymer, cell of solution for crystallizing biopolymer, method for controlling alignment of biopolymer, method for crystallizing biopolymer and biopolymer crystal
09/10/2010WO2010077639A3 Improved axial gradient transport (agt) growth process and apparatus utilizing resistive heating
09/10/2010WO2010053915A3 Methods for preparing a melt of silicon powder for silicon crystal growth
09/09/2010DE102009001379A1 Fabricating compound semiconductor epitaxial wafer comprises depositing silicon thin film on metal substrate, depositing compound semiconductor thin film on silicon buffer layer, and crystallizing compound semiconductor thin film
09/08/2010EP2226796A2 Bit-wise optical data storage utilizing aluminum oxide single crystal medium
09/08/2010EP2226413A1 Process for producing diamond single crystal with thin film and diamond single crystal with thin film
09/08/2010EP2226412A1 Method for growing silicon single crystal and method for producing silicon wafer
09/08/2010CN201574088U Six-position rotating disk
09/08/2010CN101826385A Magnetic material with exchange bias effect and preparation method thereof
09/08/2010CN101824652A Preparation method of alnico magnet
09/08/2010CN101824651A Room-temperature solution growth method of nonlinear optical crystal ammonium borate hydrate
09/08/2010CN101824650A Purifying system of high purity polysilicon and purifying method
09/08/2010CN101824646A Vacuum closed-type Bridgman-Stockbarge method for growing thallium doped sodium iodide monocrystal
09/08/2010CN101823995A 4-(4-dimethylaminostyryl) picoline3-carboxyl-4-hydroxy benzene sulfonate, nonlinear optical crystal and preparation method thereof
09/08/2010CN101509123B Method for producing small-sized tin indium oxide nano-wire material in low-temperature
09/08/2010CN101498051B Preparation of zinc oxide nano-wire array
09/08/2010CN101417802B Method for mixing chlorosilane and hydrogen in polycrystalline silicon production
09/08/2010CN101311349B Silicon with three-dimensional depression structure and method for preparing same
09/08/2010CN101293629B Process for producing carbon nano-tube or nano-wire bifurcate structure
09/08/2010CN101128911B System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
09/08/2010CN101000410B Magnetic garnet single crystal and method for producing the same as well as optical element using the same
09/07/2010US7790489 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer
09/02/2010WO2010098676A1 Method for the production of solar grade silicon
09/02/2010WO2010098012A1 Silicon epitaxial wafer and method for manufacturing silicon epitaxial wafer
09/02/2010WO2010068419A3 Production of single crystal cvd diamond rapid growth rate
09/02/2010WO2010052704A3 Tubular nanostructures, processes of preparing same and devices made therefrom
09/02/2010US20100221914 Composition and method for low temperature deposition of silicon-containing films
09/02/2010DE10050767B4 Vorrichtung zur Erzeugung von Einkristallen hoher Qualität Apparatus for producing single crystals of high quality
09/01/2010EP2224041A1 Polygonal columnar material of aluminum nitride single crystal, and process for producing plate-like aluminum nitride single crystal using the polygonal columnar material
09/01/2010EP2222599A1 Iii-v nanoparticles and method for their manufacture
09/01/2010EP2222402A1 Device and method for high throughput screening of crystallization conditions in a vapor diffusion environment
09/01/2010CN201567387U Silicon nitride crucible for solar battery
09/01/2010CN101820990A Process for charging liquefied ammonia, process for production of nitride crystals, and reactor for growth of nitride crystals
09/01/2010CN101818377A Room-temperature solution growth method of nonlinear optical crystal hydrated rubidium borate
09/01/2010CN101818376A Device and method for preparing graphite single-chips
09/01/2010CN101818345A Preparation process for growing zinc oxide nanorod arrays by two-step method
09/01/2010CN101311372B Low-temperature molten salt thermal inversion preparation method of aporate-crystal antifungin whiskers
09/01/2010CN101071794B III-V crystal and production method
08/2010
08/31/2010US7786488 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
08/31/2010US7786320 semiconductors; low dielectric thin films; chemical vapor deposition
08/31/2010US7785416 Crucible and single crystal growth method using crucible
08/31/2010US7785414 Process for manufacturing wafer of silicon carbide single crystal
08/26/2010WO2010095538A1 Silicon carbide substrate and method for production thereof
08/26/2010WO2010095021A1 Production method of n-type sic single crystal, n-type sic single crystal obtained thereby and application of same
08/26/2010WO2010094371A2 Relaxation and transfer of strained material layers
08/26/2010US20100212580 Method of manufacturing monocrystal, flow straightening cylinder, and monocrystal pulling-up device
08/26/2010CA2748020A1 Silicon carbide substrate and method of manufacturing silicon carbide substrate
08/25/2010EP2221855A1 Nitride semiconductor and nitride semiconductor crystal growth method
08/25/2010EP2221853A1 Relaxation and transfer of strained material layers
08/25/2010EP2221810A2 Bit-wise optical data storage utilizing aluminum oxide single crystal medium
08/25/2010EP2221809A2 Bit-wise optical storage utilizing aluminum oxide single crystal medium
08/25/2010CN101815816A Method for growing group III nitride crystal
08/25/2010CN101815815A Composite compound with mixed crystalline structure
08/25/2010CN101814428A Method for producing epitaxially coated silicon wafers
08/25/2010CN101812730A Preparation method of ultralong monocrystal beta-SiC nanowire metal-free catalyst
08/25/2010CN101812729A Polycrystalline silicon ingot with low carbon content and preparation method
08/25/2010CN101812728A Preparation method of n-type crystalline silicon
08/25/2010CN101812727A Method for directionally solidifying and purifying polycrystalline silicon under DC electric field
08/25/2010CN101812726A Method for preparing gallium-doped p-type crystalline silicon
08/25/2010CN101812723A Method and device for growing silicon carbide signal crystals based on physical vapor transport technology
08/25/2010CN101812722A Synthesis method of MgOHCl single-crystalline nanorod
08/25/2010CN101519194B Preparation method of metastable cubic boron nitride (e-BN) nano-powder
08/25/2010CN101481817B Growth method of nonpolar ZnO crystal film
08/25/2010CN101348936B Orientational alignment carbon nano-tube and carbon coating cobalt nano-particle complex and preparation thereof
08/25/2010CN101127380B ZnO nano structure vertical on silicon/insulation layer structure underlay and its making method
08/24/2010USRE41551 Method of preparing group III-V compound semiconductor crystal
08/24/2010US7781356 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
08/24/2010US7780783 Apparatus and method for producing single crystal, and silicon single crystal
08/19/2010WO2010092955A1 Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon
08/19/2010WO2010092736A1 Method for growing group 3b nitride crystal, and group 3b nitride crystal
08/19/2010US20100209686 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
08/19/2010US20100206218 Method of making group III nitride-based compound semiconductor
08/19/2010DE112008002440T5 Verfahren zur Herstellung von Alkoholestern aus Triglyceriden und Alkoholen mittels heterogener Katalysatoren auf der Basis eines hybriden Feststoffs mit organisch-anorganischer Mischmatrix A process for preparing alcohol esters from triglycerides and alcohols by heterogeneous catalysts based on a hybrid organic-inorganic solid with mixing matrix
08/19/2010DE102010001720A1 Einkristallines SiC-Substrat, einkristalliner epitaktischer SiC-Wafer und SiC-Halbleitervorrichtung Single crystal SiC substrate, a single-crystal epitaxial SiC wafer and the SiC semiconductor device
08/19/2010DE102004031441B4 Verfahren zum Herstellen einer Schicht aus kristallinem Silicium, Verfahren zum Herstellen einer aktiven Schicht aus einer solchen Schicht, Verfahren zum Herstellen eines Schaltelements aus einer solchen aktiven Schicht sowie Schaltelement mit einer Schicht aus kristallinem Silicium A method for producing a layer of crystalline silicon, methods of making an active layer made of such a layer, methods of making a switching element of such an active layer, and switching element with a layer of crystalline silicon
08/18/2010EP2219236A1 Process for producing a GaN-based element
08/18/2010EP2218806A1 Aln crystal and method for growing the same
08/18/2010EP2218805A1 Crystallisation method with control of the grain's direction in the crystal
08/18/2010EP2218684A1 Process for production of dispersion of fluorinated nano diamond
08/18/2010CN201553805U Cutting-torch preparing device for graphite single chips
08/18/2010CN201553804U Artificial quartz crystal growth seed parallel fixing device
08/18/2010CN201553616U Silicon nitride crucible for polycrystalline silicon solar cell casting
08/18/2010CN1966401B Semiconductor material
08/18/2010CN101809769A Compound semiconductor epitaxial wafer and process for producing the same
08/18/2010CN101805928A Single crystal gan substrate
08/18/2010CN101805927A Grower of high-purity semi-insulating silicon carbide single crystal
08/18/2010CN101805926A Ultraviolet-visible response praseodymium doping nanometer zinc oxide and preparation method thereof
08/18/2010CN101805925A Gallium and indium doped single crystal silicon material for solar battery and preparation method thereof
08/18/2010CN101805924A Device for producing crystallized silicon body for solar cells
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