| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 10/06/2010 | CN101851782A Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| 10/06/2010 | CN101851781A Method for preparing AlN mono-crystal nanobelts and nano-branch structure |
| 10/06/2010 | CN101851779A Method for manufacturing monocrystalline silicon chip of solar cell |
| 10/06/2010 | CN101851778A Method for preparing one-dimensional non-linear optical material fibrous KNbO3 crystals |
| 10/06/2010 | CN101525134B Method for preparing cubic silicon carbide ultrafine powder by using waste plastic at low temperature |
| 10/06/2010 | CN101311338B Process for preparing Te one-dimensional nanostructure by template-free electrochemical deposition method |
| 10/06/2010 | CN101307497B Composite ferro-electric thin film for microwave adjustable device and method for making same |
| 10/06/2010 | CN101225515B Method for preparing gold-nano array electrode |
| 10/06/2010 | CN101207174B 氮化物半导体衬底及其制造方法 The nitride semiconductor substrate and manufacturing method thereof |
| 10/06/2010 | CN101175872B Method for producing silicon single crystals |
| 09/30/2010 | WO2010109873A1 Silicon wafer and method for manufacturing same |
| 09/30/2010 | WO2010109853A1 Silicon wafer and method of manufacturing same |
| 09/30/2010 | WO2010053586A3 Systems, methods and substrates of monocrystalline germanium crystal growth |
| 09/30/2010 | US20100242833 AlN Crystal and Method of Its Growth |
| 09/29/2010 | EP2234142A1 Nitride semiconductor substrate |
| 09/29/2010 | EP2233603A1 Method and apparatus |
| 09/29/2010 | EP2231518A1 Apparatus including a plasma torch for purifying a semiconductor material |
| 09/29/2010 | EP1876270B1 Method for growth of GaN single crystals |
| 09/29/2010 | CN201593074U Annular electromagnetic field for single crystal |
| 09/29/2010 | CN201593073U Thermal-field structure of energy-saving polysilicon ingot furnace |
| 09/29/2010 | CN1974383B Production process for high purity polycrystal silicon and production apparatus for the same |
| 09/29/2010 | CN1914126B Method of incorporating a mark in CVD diamond |
| 09/29/2010 | CN101849043A Single-crystal manufacturing apparatus and manufacturing method |
| 09/29/2010 | CN101845672A Zinc oxide nanocone array with controllable sharpness and preparation method thereof |
| 09/29/2010 | CN101845671A Method synthesizing nanocrystalline by assistance of soluble salt |
| 09/29/2010 | CN101845670A Technique for the growth of planar semi-polar gallium nitride |
| 09/29/2010 | CN101845669A Hydrothermal synthesis method of monocrystal multilayer flaky WO3 |
| 09/29/2010 | CN101845668A Method for preparing nano nickel borate whiskers |
| 09/29/2010 | CN101845667A Method for producing high-resistivity monocrystalline silicon |
| 09/29/2010 | CN101845666A N-doped crystalline silicon and preparation method thereof |
| 09/29/2010 | CN101845665A Casting device of initial-setting polycrystalline silicon oriented growth cast ingot as well as making method and application thereof |
| 09/29/2010 | CN101845664A Low-temperature preparation method of highly oriented single crystal titanium dioxide nanowire array film |
| 09/29/2010 | CN101845646A Preparation method of gold nano-wire of monocrystalline and polycrystalline structure |
| 09/29/2010 | CN101845098A Crystal of rat RANK/RANKL extracellular compound, preparation method and application thereof |
| 09/29/2010 | CN101845090A Rat RANK extracellular protein crystal |
| 09/29/2010 | CN101409424B Nd<3+> ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof |
| 09/29/2010 | CN101307495B '6H'-BaIrO3 crystal and method for making same |
| 09/29/2010 | CN101307494B Cubic perovskite structure BaRuO3 crystal and method for making same |
| 09/29/2010 | CN101307491B Sr(1-x)CaxCrO3 perovskite Mott compound and its high pressure high-temperature synthesis method |
| 09/29/2010 | CN101109102B Method of synthesizing organic-inorganic compound germanium oxide monocrystal nano thread |
| 09/29/2010 | CN101005017B Method of forming a semiconductor thin film |
| 09/28/2010 | US7803717 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
| 09/28/2010 | US7803423 Preparation of nanoparticle materials |
| 09/28/2010 | US7803228 Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers |
| 09/28/2010 | CA2655579C Method and device for fabricating semiconductor light emitting elements |
| 09/28/2010 | CA2619259C Method for producing ammonium hexachlororuthenate and ruthenium powder, as well as ammonium hexachlororuthenate |
| 09/28/2010 | CA2424415C Synthesis of colloidal nanocrystals |
| 09/23/2010 | WO2010106056A1 Purifying metallurgical silicon |
| 09/23/2010 | WO2010105947A1 Mocvd reactor having a ceiling panel coupled locally differently to a heat dissipation member |
| 09/23/2010 | WO2010105715A1 Pyroelectric material - radiation sensor - method of making a radiation sensor - use of lithium tantalate and lithium niobate |
| 09/23/2010 | WO2010086600A3 Providing gas for use in forming a carbon nanomaterial |
| 09/23/2010 | US20100236483 Chemical vapor deposition reactor having multiple inlets |
| 09/23/2010 | DE112008002065T5 Verfahren zum Messen des Flüssigkeitspegels in einer Einkristallziehvorrichtung, die das CZ-Verfahren verwendet A method of measuring the liquid level in a single crystal pulling apparatus that uses the CZ method |
| 09/22/2010 | EP2230334A1 MULTILAYER SUBSTRATE INCLUDING GaN LAYER, METHOD FOR MANUFACTURING THE MULTILAYER SUBSTRATE INCLUDING GAN LAYER, AND DEVICE |
| 09/22/2010 | EP2230333A1 Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal |
| 09/22/2010 | EP2230332A1 Silicon carbide single crystal ingot, and substrate and epitaxial wafer obtained from the silicon carbide single crystal ingot |
| 09/22/2010 | EP1470592B1 Boron phosphide based semiconductor device |
| 09/22/2010 | CN201587863U Solar-grade polycrystalline silicon ingot unidirectional solidification production line |
| 09/22/2010 | CN101842524A Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal |
| 09/22/2010 | CN101841018A Single crystal lithium manganese oxide for lithium ion battery and preparation method thereof |
| 09/22/2010 | CN101838850A Method for preparing nano-tube aluminum borate whisker with sol precursor |
| 09/22/2010 | CN101838849A Preparation method of CuAlO2 monocrystal |
| 09/22/2010 | CN101838848A Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer |
| 09/22/2010 | CN101838847A Single crystal furnace device |
| 09/22/2010 | CN101838846A Single crystal furnace device |
| 09/22/2010 | CN101838845A Growing and preparing method of cubic phase oxygen zinc magnesium single crystal film |
| 09/22/2010 | CN101837978A Continuous purification reaction treating device and method for producing monocrystalline silicon or polycrystalline silicon by using silica ore |
| 09/22/2010 | CN101837977A Method and equipment for producing elementary silicon |
| 09/22/2010 | CN101319393B Preparation method of strontium bismuth tantalite nanometer line |
| 09/22/2010 | CN101319375B Optical-level quartz crystal temperature-variable temperature difference method growth technique |
| 09/21/2010 | US7799305 Silicon carbide single crystal and single crystal wafer |
| 09/21/2010 | US7799132 Patterned atomic layer epitaxy |
| 09/21/2010 | US7799131 Method for the growth of semiconductor ribbons |
| 09/16/2010 | WO2010104656A2 Rapid crystallization of heavily doped metal oxides and products produced thereby |
| 09/16/2010 | WO2010103869A1 Method for manufacturing single crystal optical lens |
| 09/16/2010 | WO2010103674A1 Group iii nitride semiconductor device, epitaxial substrate, and method for manufacturing group iii nitride semiconductor device |
| 09/16/2010 | WO2010103387A1 Method of producing sic single crystal |
| 09/16/2010 | WO2010102563A1 Piezoelectric crystal elements |
| 09/16/2010 | WO2010102471A1 Method for preparing amino acid chelating copper hydroxychloride crystals and use thereof |
| 09/16/2010 | DE112008002267T5 Positionsmessvorrichtung und Positionsmessverfahren in einer Halbleitereinkristallherstellungsvorrichtung A position measuring device and the position measuring method in a semiconductor single crystal manufacturing apparatus |
| 09/16/2010 | DE102006035377B4 Verfahren zur Herstellung eines Halbleiterkristalls A process for producing a semiconductor crystal |
| 09/15/2010 | CN201580990U Spaying nozzle used for purifying polysilicon |
| 09/15/2010 | CN1973063B Monocrystals of nitride containing gallium and its application |
| 09/15/2010 | CN101835927A Scintillator crystals and methods of forming |
| 09/15/2010 | CN101831711A Microwave preparation method of water soluble ZnSe quantum dots |
| 09/15/2010 | CN101831710A Method for preparing lead titanate monocrystal nanometer branch crystal with perovskite structure |
| 09/15/2010 | CN101831709A Growing method of Re<3+>:KY(WO4)2 laser crystal |
| 09/15/2010 | CN101831708A Gadolinium gallium garnet novel laser crystal codoped with chromium-sensitized ions and activated by thulium ions |
| 09/15/2010 | CN101831707A Gadolinium gallium garnet novel laser crystal codoped with ytterbium-sensitized ions and activated by thulium ions |
| 09/15/2010 | CN101831706A Growth method of low ultraviolet absorption YA13(BO3)4 crystal |
| 09/15/2010 | CN101831705A Method for growing YAl3(BO3)4 crystals by tungstate cosolvent system |
| 09/15/2010 | CN101831704A Strontium-doped barium borate ultraviolet double-refraction crystal and growing technology thereof |
| 09/15/2010 | CN101831703A Borate compound gadolinium-lanthanum-scandium borate and mono-crystal, preparation method and application thereof |
| 09/15/2010 | CN101831702A Copper-doped yttrium aluminate crystal for thermoluminescence and photoluminescence and preparation method thereof |
| 09/15/2010 | CN101831701A Method for growing n-type transparent conducting ZnO crystal thin film by F doping |
| 09/15/2010 | CN101831700A Quick growth method for potassium dihydrogen phosphate single crystal |
| 09/15/2010 | CN101831699A Non-linear optical crystal of iodic acid barium niobate |
| 09/15/2010 | CN101831698A Non-linear optical crystal of iodic acid zinc potassium |
| 09/15/2010 | CN101831697A Method of growing silicon single crystal |
| 09/15/2010 | CN101831696A Silicon single crystal growth method |