Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2010
11/03/2010CN101876087A Method for preparing calcium sulphate whiskers used for absorbing heavy metal ions in waste incineration flue gas
11/03/2010CN101876086A Preparation method of Zr and Mg co-doped iron lithium niobate crystal
11/03/2010CN101876085A Polycrystalline silicon ingot and preparation method thereof
11/03/2010CN101875494A Preparation method of low-titanium and high-purity polycrystalline silicon
11/03/2010CN101875493A Method for reducing polysilicon
11/03/2010CN101498050B Preparation of nickel zinc alloy nano-wire array material
11/03/2010CN101319391B Synthesis of constituent-homogeneous spherical lithium tantalite doping polycrystal raw material
11/03/2010CN101126165B Method for preparing one-dimensional nano material
11/03/2010CN101092744B Preparation method of macroscopic ZnO monocrystal material in ramiform fractal structure
11/02/2010US7825417 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers
11/02/2010US7825409 GaN crystal substrate
11/02/2010US7825405 Upon excitation, one carrier confined to core and other carrier confined to overcoating; band gaps; photovoltaic devices, photoconductors
11/02/2010US7824955 Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
10/2010
10/28/2010WO2010122933A1 Method for manufacturing iii nitride crystal substrate
10/28/2010WO2010122821A1 Process for producing indium-phosphorus substrate, process for producing epitaxial wafer, indium-phosphorus substrate, and epitaxial wafer
10/28/2010WO2010122801A1 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
10/28/2010DE112008003497T5 Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls A method for growing a silicon carbide single crystal
10/28/2010DE102005037393B4 Verfahren sowie Vorrichtung zur Züchtung von grossvolumigen Einkristallen unter Ausbildung einer konvexen Phasengrenzfläche während des Kristallisationsprozesses Method and apparatus for the production of large-volume single crystals, forming a convex phase boundary during the crystallization process
10/28/2010CA2759530A1 Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
10/27/2010EP2243869A2 Method for fabricating semiconductor device
10/27/2010EP2243868A1 Laminate and process for producing the laminate
10/27/2010EP2243867A1 Method for growing gallium nitride crystal and method for producing gallium nitride substrate
10/27/2010EP2243866A1 Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate
10/27/2010EP2242874A1 Device and method for preparing crystalline bodies by directional solidification
10/27/2010EP2242722A1 Free flowing 100 - 500 mm size spherical crystals of common salt and process for preparation thereof
10/27/2010EP1560951B1 Process for preparing single crystal silicon using crucible rotation to control temperature gradient
10/27/2010EP1416069B1 Organic semiconductor film and method for manufacture thereof
10/27/2010EP1399605B1 Processor controlled system and method for mixing and delivering solutions
10/27/2010CN101871127A Size-controllable synthesis method for MSe (M equal to Cd, Pb) nanocrystals
10/27/2010CN101871126A Gadolinium gallate crystal and growth method thereof
10/27/2010CN101871125A High-temperature rare earth oxide laser crystal and preparation method thereof
10/27/2010CN101871123A Method and device for growing cadmium zinc telluride crystals in mobile tellurium solvent melting zone
10/27/2010CN101871122A Preparation method of Pt-endpoint FeNi nano rod
10/27/2010CN101870471A High-efficiency large polycrystalline silicon reducing furnace
10/27/2010CN101311386B Method for preparing single crystal zinc blende nano-wire
10/26/2010US7820246 Method for growing thin nitride film onto substrate and thin nitride film device
10/26/2010US7819973 Apparatus for crystal growth of biomacromolecules
10/21/2010WO2010119792A1 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
10/21/2010WO2010119749A1 Apparatus for producing silicon carbide single crystal and method for producing silicon carbide single crystal
10/21/2010WO2010119614A1 Anneal wafer, method for manufacturing anneal wafer, and method for manufacturing device
10/21/2010WO2010119430A1 Reaction chamber of an epitaxial reactor and reactor that uses said chamber
10/21/2010WO2010119129A1 Method and apparatus for purifying a silicon feedstock
10/21/2010WO2010118692A1 Method and device for metallurgical purification using liquid dross filter and method for purifying polysilicon
10/21/2010WO2008132323A3 Device and method for producing self-sustained plates of silicon or other crystalline materials
10/21/2010DE102010003286A1 Verbindungshalbleitersubstrat Compound semiconductor substrate
10/21/2010CA2747776A1 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
10/20/2010EP2241657A1 Method for manufacturing epitaxial silicon wafer
10/20/2010EP2241534A2 Method for manufacturing bismuth single crystal nonowires
10/20/2010CN101868848A Method for fabricating p-type gallium nitride-based semiconductor, method for fabricating nitride-based semiconductor element, and method for fabricating epitaxial wafer
10/20/2010CN101868566A Process for producing single crystal SiC substrate and single crystal SiC substrate produced by the process
10/20/2010CN101866960A Method for preparing CdS-Bi2S3 composite nanocrystalline by utilizing partial cation exchange reaction
10/20/2010CN101864598A Preparation method of growing potassium tantalate-niobate series monocrystal materials by fused mass pulling method
10/20/2010CN101864597A Holmium and thulium-doped gadolinium gallate laser crystal
10/20/2010CN101864596A Yb, Gd co-doped barium fluoride crystal and preparation method thereof
10/20/2010CN101864595A Erbium-doped gadolinium lithium fluoride crystal and growth method thereof
10/20/2010CN101864594A Ingot casting method for quasi-monocrystalline silicon
10/20/2010CN101864593A N-doped crystalline silicon and preparation method thereof
10/20/2010CN101864592A Ferroelectric metal hetero-junction based memristor and preparation method thereof
10/20/2010CN101864591A Improving method of silicon monocrystalline furnace thermal field system
10/20/2010CN101863475A Starting method of reduction furnace under polysilicon hydrogen atmosphere
10/20/2010CN101487114B Low temperature polysilicon thin-film device and method of manufacturing the same
10/14/2010WO2010116761A1 Method for manufacturing epitaxial silicon wafer, and epitaxial silicon wafer
10/14/2010WO2010116596A1 Method for manufacturing free-standing iii nitride semiconductor substrate, and substrate for growing iii nitride semiconductor layer
10/14/2010WO2010116345A1 Silver nanoplates
10/14/2010US20100260224 Group iii nitride semiconductor element and epitaxial wafer
10/14/2010DE102009015236A1 Sinterkörper Sintered body
10/14/2010DE102009015113A1 Device for growing large-volume single crystals, comprises crucible, which is surrounded by jacket heating element and disposes on both sides over movable insulation elements, where the jacket heating element is upwardly movably arranged
10/13/2010EP2239794A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
10/13/2010EP2238274A1 Method for manufacturing nanowire by using stress-induced growth
10/13/2010CN201605349U 一种生长硅单晶的节能热场结构 Growing a silicon single crystal structure of energy-saving thermal field
10/13/2010CN201605348U 一种区熔法生长单晶硅用硅籽晶夹持器 One kind of zone melting growth of monocrystalline silicon with silicon seed holder
10/13/2010CN101858836A Chemical corrosion method of manganese doped gallium antimonide monocrystalline
10/13/2010CN101857971A Bismuth/bismuth-antimony extensional superlattice nanowire and preparation method thereof
10/13/2010CN101857970A Growing method of large-size flaky sapphire crystals
10/13/2010CN101665253B Polysilicon purification method and crucible and purification device used for polysilicon purification
10/13/2010CN101496127B 等离子体显示面板 The plasma display panel
10/13/2010CN101328615B Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation
10/13/2010CN101217110B Group III nitride semiconductor substrate and its manufacturing method
10/13/2010CN101001978B Susceptor
10/07/2010WO2010114008A1 Device for producing single crystal of silicon carbide
10/07/2010WO2010113685A1 Supporting substrate, bonding substrate, method for manufacturing supporting substrate, and method for manufacturing bonding substrate
10/07/2010WO2010112259A1 Pot for silicon suitable for producing semiconductors
10/07/2010WO2010111965A1 High-purity tellurium dioxide single crystal and manufacturing method thereof
10/07/2010US20100255663 Silicon crystallization apparatus and silicon crystallization method thereof
10/07/2010DE102009016137A1 Herstellungsverfahren für einen versetzungsarmen AIN-Volumeneinkristall und versetzungsarmes einkristallines AIN-Substrat Production process for a low-dislocation AlN bulk single and low dislocation single crystal AlN substrate
10/07/2010DE102009016134A1 Producing volume single crystal, comprises disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis, and growing the single crystal by deposition onto seed crystal
10/07/2010DE102009016133A1 Producing aluminum nitride volume single crystal, comprises disposing monocrystalline aluminum nitride seed crystal in crystal growth region of crucible arrangement, and producing aluminum nitride growth gas phase in crystal growth region
10/07/2010DE102009016132A1 Producing silicon carbide volume single crystal, by disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis and producing growth gas phase in crystal growth region
10/07/2010DE102009016131A1 Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gaseous phase in crystal growth region of growth crucible, and growing the single crystal by deposition from silicon carbide growth gaseous phase
10/06/2010EP2236469A1 Vitreous silica crucible for pulling silicon single crystals
10/06/2010EP2235762A2 Method of making ternary piezoelectric crystals
10/06/2010EP2235238A1 Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device
10/06/2010EP2234941A1 Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
10/06/2010CN201598182U 多晶炉装卸料装置 Polycrystalline furnace loading and unloading device
10/06/2010CN1973064B One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
10/06/2010CN101853816A Group III nitride semiconductor composite substrate, group III nitride semiconductor substrate, and group III nitride semiconductor composite substrate manufacturing method
10/06/2010CN101852724A Method for measuring material glass transition based on optical change
10/06/2010CN101851785A Method for producing group III nitride semiconductor
10/06/2010CN101851784A Compound cesium lithium borate nonlinear optical crystal and making method and application thereof
10/06/2010CN101851783A High-purity tellurium dioxide single crystal and preparation method
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