Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2010
11/24/2010CN101896648A Multilayer substrate including GaN layer, method for manufacturing the multilayer substrate including GaN layer, and device
11/24/2010CN101896647A Silicon carbide single crystal ingot, and substrate and epitaxial wafer obtained from the silicon carbide single crystal ingot
11/24/2010CN101896646A Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
11/24/2010CN101896441A Method for producing Ca-La-F-based light-transparent ceramic, Ca-La-F-based light-transparent ceramic, optical member, optical system, and composition for ceramic formation
11/24/2010CN101892523A Preparation method of Zr, Ru and Fe triple-doped lithium niobate crystal
11/24/2010CN101892522A Method for preparing lead-titanate-lead-magnesium niobate films by pulsed laser deposition assisted by oxygen plasmas
11/24/2010CN101892521A Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
11/24/2010CN101892520A Nickel photonic crystal with inverse opal structure and preparation method thereof
11/24/2010CN101892519A Silicon core furnace repeatedly pulling multiple silicon cores in one heat
11/24/2010CN101892518A System and method for manufacturing polycrystalline ingots
11/24/2010CN101892517A Slurry for preparing polycrystalline silicon crucible coat and preparation method thereof
11/24/2010CN101892515A Method for preparing full-diameter and low-oxygen and carbon solar monocrystalline silicon slice
11/24/2010CN101892514A Process for growing sodium nitrate monocrystal by Bridgman method
11/24/2010CN101892513A Method for preparing nano slabby aluminium borate whisker by hydrothermal method
11/24/2010CN101892512A Large-area (001) anatase TiO2 monocrystal preparation method
11/24/2010CN101892504A Method for preparing strontium fluoride or rare-earth doped strontium fluoride film by adopting electrolytic deposition
11/24/2010CN101213497B Reinforced micromechanical part
11/23/2010US7837969 making optical components or elements from CaF2 with parallel (100)- or (110)-oriented optic axes (principle direction) by tempering at elevated temperatures and suitably adapted cooling
11/23/2010US7837791 Silicon single crystal wafer for particle monitor
11/23/2010US7837790 Formation and treatment of epitaxial layer containing silicon and carbon
11/18/2010WO2010132651A1 Methods of making an article of semiconducting material on a mold comprising semiconducting material
11/18/2010WO2010132644A1 Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
11/18/2010WO2010131570A1 Silicon carbide substrate and semiconductor device
11/18/2010WO2010131569A1 Method for producing semiconductor substrate
11/18/2010WO2010131568A1 Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
11/18/2010WO2010130963A1 Method of nanostructuring a film or a wafer of material of the metal oxide or semi-conductor type
11/18/2010WO2010039570A3 Method of determining an amount of impurities that a contaminating material contributes to high purity silicon and furnace for treating high purity silicon
11/18/2010WO2009133350A8 Electrically-tunable optical devices
11/18/2010US20100291769 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
11/18/2010US20100291408 Nanostructures including a metal
11/18/2010US20100289122 Iii-v nitride substrate boule and method of making and using the same
11/18/2010CA2761430A1 Silicon carbide substrate and semiconductor device
11/18/2010CA2761428A1 Silicon carbide substrate, semiconductor device, and method of manufacturing silicon carbide substrate
11/18/2010CA2735975A1 Method for manufacturing semiconductor substrate
11/17/2010EP2251464A2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
11/17/2010EP2251462A2 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
11/17/2010EP2251460A1 Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible
11/17/2010EP2251459A1 Method and device for preparing liquid silicon
11/17/2010EP2251389A1 Nanowire ink
11/17/2010EP1841902B1 METHOD FOR THE PRODUCTION OF C-PLANE ORIENTED GaN SUBSTRATES OR AlxGa1-xN SUBSTRATES
11/17/2010EP1721031B1 Reduction of carrot defects in silicon carbide epitaxy
11/17/2010EP1537263B1 Semiconductor nanocrystal heterostructures
11/17/2010EP1532288B1 Hybrid beam deposition system and method for fabricating zno films
11/17/2010EP1411154B1 Oxide high-critical temperature superconductor acicular crystal and its production method
11/17/2010CN201634795U Czochralski crystal furnace graphite crucible
11/17/2010CN201634792U Straight-pull single crystal furnace
11/17/2010CN201634791U Flame fusion furnace body for growing rutile single crystals
11/17/2010CN201634437U Polycrystalline silicon produced reduction furnace or hydrogenation furnace exhaust gas cooling device
11/17/2010CN201634436U Turbulent field mixed feeding device for polycrystalline silicon reduction furnace
11/17/2010CN101887935A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/17/2010CN101886292A Er-doped gadolinium yttrium silicate laser crystal and preparation method thereof
11/17/2010CN101886291A Heat insulating cage and ingot casting furnace with same
11/17/2010CN101886281A Si-ZnO one-dimensional nano material and preparation method thereof
11/17/2010CN101885511A Method for preparing monoclinic lead tungstate nano belt crystal material
11/17/2010CN101417803B Method for cooling polycrystalline silicon hydrogen reducing furnace outlet duct by air
11/17/2010CN101413141B Method for growing ZnO nano-wire array on flexible substrate
11/17/2010CN101319383B Preparation method of nanometer barium zirconate
11/17/2010CN101024895B Epitaxial wafer and method for production of epitaxial wafer
11/16/2010US7833580 Chemisorption; chemical vaopor deposition; removal impurities; cyclic process
11/16/2010US7833345 Treatment of crystals in order to avoid light-induced modifications of the refractive index
11/11/2010WO2010129718A2 Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
11/11/2010WO2010128746A1 Device and method for continuous casting of silicon
11/11/2010WO2010128492A1 Ultra-hard diamond composites
11/11/2010US20100285663 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
11/11/2010US20100282160 Single crystals and methods for fabricating same
11/10/2010EP2248932A1 Silicon monocrystal growth method
11/10/2010EP2248931A2 Free-standing and parting method for forming same
11/10/2010EP2248776A1 Quartz glass crucible
11/10/2010EP2248152A1 Methods of making an unsupported article of pure or doped semiconducting material
11/10/2010EP2247310A1 Compositions and methods for crystallizing antibody fragments
11/10/2010EP1836332B1 Hydrodynamic cavitation crystallization device and process
11/10/2010CN201627002U Modified thermal field structure of polycrystalline silicon ingot furnace
11/10/2010CN201627001U Matted crystal chuck component for pulling silicon rods
11/10/2010CN201624607U Jack used for internal and external cleaner pipelines of Czochralski method grown silicon single-crystal workshop
11/10/2010CN101883881A Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device
11/10/2010CN101882919A Magnetic-electric sensing transducer
11/10/2010CN101880913A Method for preparing lithium niobate thin-film materials
11/10/2010CN101880912A Aluminum hydroxide/magnesium-based hydrotalcite multiphase-based material and preparation method for crystal whiskers thereof
11/10/2010CN101880911A Polycrystalline silicon ingot casting process
11/10/2010CN101880908A Method for preparing originated multi-section yttrium vanadate laser crystal
11/10/2010CN101498054B Method for preparing large size yttrium system block material with YbBCO as solder by brazing method
11/09/2010US7829913 Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method
11/09/2010US7829442 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
11/09/2010US7829352 Fabrication of nano-object array
11/09/2010US7829207 improved quality, terraces of planes disposed stepwise in sequence, envelope of terraces being inclined relative to plane, and epitaxially growing crystal over surface
11/09/2010US7828895 Method of producing optical element
11/04/2010WO2010125739A1 Silica vessel and process for producing same
11/04/2010WO2010125674A1 METHOD FOR FABRICATING SiC SUBSTRATE
11/04/2010US20100279440 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
11/03/2010EP2246896A1 Diamond uv sensor element and manufacturing method thereof, uv sensor device, diamond single crystal processing method
11/03/2010EP2246462A1 Iii-group nitride single-crystal ingot, iii-group nitride single-crystal substrate, method for manufacturing iii-group nitride single-crystal ingot, and method for manufacturing iii-group nitride single-crystal substrate
11/03/2010EP2246458A1 Thin film of aluminum nitride and process for producing the thin film of aluminum nitride
11/03/2010EP2245218A1 Method for producing group iii nitride wafers and group iii nitride wafers
11/03/2010EP2245217A1 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
11/03/2010CN201620208U Device for forming single crystal silicon belts
11/03/2010CN201620207U Crucible for ingot casting of polysilicon
11/03/2010CN201620206U Double-flash evaporation device for preparing superlattice thermoelectric thin-film material
11/03/2010CN201620202U Heating coil for growing vacuum zone-melting silicon monocrystal
11/03/2010CN1997883B Device for operating microfluid device
11/03/2010CN101876772A Compound potassium lead borophosphate nonlinear optical crystal as well as preparation method and application thereof
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