Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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12/15/2010 | CN101914805A Directional solidification furnace with improved crucible cover part |
12/15/2010 | CN101914804A Method for preparing cuprous oxide single crystal powder containing high-index crystal face envelope surface |
12/15/2010 | CN101914803A Crystal forming devices and systems and methods for making and using the same |
12/15/2010 | CN101913868A Method for preparing potassium-sodium niobate textured ceramic and potassium-sodium niobate single crystal |
12/15/2010 | CN101913636A Method for producing high-purity high-density alumina block material for sapphire single crystals |
12/15/2010 | CN101451271B Apparatus for producing zonal polycrystalline silicon by edge limited silicon film growth method |
12/15/2010 | CN101450328B Preparation method of Fe-C-TiO2 nano tube array |
12/15/2010 | CN101440515B Growth method of manganese doped lithium aluminate crystal |
12/15/2010 | CN101381892B Method for preparing gallium nitride crystal by solid-state displacement reaction |
12/15/2010 | CN101319371B Production method of spindle-shaped nano ZnO monocrystal |
12/15/2010 | CN101319370B Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array |
12/15/2010 | CN101311364B Process for preparing P-shaped zinc oxide semiconductor bulk material |
12/15/2010 | CN101311339B Process for discriminating high growth rate chemical vapour deposition diamond single crystal |
12/15/2010 | CN101311143B Method for preparing charcoal/charcoal air supply nozzle of high temperature furnace |
12/15/2010 | CN101175875B Method and apparatus for producing group III element nitride crystal, and group iii element nitride crystal |
12/15/2010 | CN101148780B Method for preparing twist silicon nitride ceramics crystal whisker |
12/09/2010 | WO2010140665A1 Process and apparatus for production of crystals of compound of metal belonging to group-13 on periodic table |
12/09/2010 | WO2010140564A1 Nitride semiconductor crystal and method for manufacturing same |
12/09/2010 | WO2010140426A1 MULTILAYER ZnO SINGLE CRYSTAL SCINTILLATOR AND METHOD FOR MANUFACTURING SAME |
12/09/2010 | WO2010140352A1 Lid for fused quartz crucible, fused quartz crucible and method for handling same |
12/09/2010 | US20100308437 Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitrided-based compound semiconductor device |
12/09/2010 | US20100308272 Monodisperse Core/Shell and Other Complex Structured Nanocrystals and Methods of Preparing the Same |
12/08/2010 | EP2259295A1 Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element |
12/08/2010 | EP2259287A1 Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element |
12/08/2010 | EP2258890A1 METHOD FOR GROWING AlxGa1-xN SINGLE CRYSTAL |
12/08/2010 | EP2257968A1 Super lattice/quantum well nanowires |
12/08/2010 | EP2257658A1 Method of making nucleation layer for diamond growth |
12/08/2010 | EP1559813B1 Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal |
12/08/2010 | EP1493848B1 Seed crystal of silicon carbide single crystal and method for producing ingot using same |
12/08/2010 | EP1337695B1 Synthesis of colloidal metal chalcogenide nanocrystals |
12/08/2010 | CN201665536U Reducing furnace applicable to Siemens technique for producing polycrystalline silicon |
12/08/2010 | CN101910477A Method for growing group III nitride crystal |
12/08/2010 | CN101910476A Method for growing silicon carbide single crystal |
12/08/2010 | CN101910474A Single crystal producing device |
12/08/2010 | CN101908486A Novel process for applying neutron transmutation doping transverse magnetic field czochralski silicon to high-power semiconductor device |
12/08/2010 | CN101906666A Method for preparing micron/nano tungsten crystal whisker/wire/bar |
12/08/2010 | CN101906665A Method for preparing silver-lead-lanthanum-tellurium thermoelectric material |
12/08/2010 | CN101906664A Manufacturing device for silicon carbide single crystal |
12/08/2010 | CN101906663A Blue ssuperindividual corundum and preparation method thereof |
12/08/2010 | CN101906662A Preparation method of TiO2 nanotubes modified by silver nanoparticles with different particle diameters |
12/08/2010 | CN101906661A Ordered layered self-assembled nanostructured lithium iron phosphate polycrystalline powder and preparation method thereof |
12/08/2010 | CN101906658A Process for straightly pulling silicon single crystal by using permanent magnetic field and accessory equipment |
12/08/2010 | CN101906657A System for manufacturing single crystal ingot |
12/08/2010 | CN101559945B Method for preparing high purity polysilicon by utilizing silica nanoparticles and device thereof |
12/08/2010 | CN101531349B Preparation method of disk hexagonal boron nitride polycrystalline fine powder |
12/08/2010 | CN101525764B Method for preparing vacuum zone melting high resistant silicon single crystal |
12/08/2010 | CN101509144B Method for improving nonpolar a face GaN film quality on lithium aluminate substrate |
12/08/2010 | CN101425658B Laser diode expitaxial wafer and method for producing same |
12/08/2010 | CN101423219B Polycrystalline silicon purification or silicon liquid leakage defense device of ingot furnace |
12/08/2010 | CN101368288B P type ZnO thin film production method |
12/08/2010 | CN101333685B Three-chamber continuous whisker-generating vacuum furnace for continuously preparing silicon carbide whisker |
12/08/2010 | CN101328609B Method for preparing tin doping zinc oxide nanowire by vapor deposition |
12/08/2010 | CN101311348B Silicon with three-dimensional hollow structure and method for preparing same |
12/08/2010 | CN101311343B Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot |
12/08/2010 | CN101310899B Method for preparing silver nano-wire in large batch |
12/08/2010 | CN101220513B Thermal treatment method for improving type N polycrystal Bi2Te3thermoelectricity capability |
12/08/2010 | CN101133194B Production technique and device for float silicon wafer |
12/08/2010 | CN101091893B Vacuum tube furnace for preparing nano material |
12/07/2010 | US7846819 Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures |
12/07/2010 | US7846764 Semiconductor film comprising discrete domains of an organic semiconductor and a method of its fabrication |
12/02/2010 | WO2010137221A1 Silica container and method for producing same |
12/02/2010 | US20100301351 High voltage switching devices and process for forming same |
12/01/2010 | EP2256834A1 Colloidal metal chalcogenide nanocrystals |
12/01/2010 | EP2256786A1 Process for producing monocrystal thin film and monocrystal thin film device |
12/01/2010 | EP2256235A1 Silicon single crystal pull-up apparatus and process for producing silicon single crystal |
12/01/2010 | EP2256234A2 Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible |
12/01/2010 | EP2255029A2 Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device |
12/01/2010 | CN201660717U Silicon nitride collecting platform |
12/01/2010 | CN201660716U Dustproof sealing cover for polysilicon raw materials |
12/01/2010 | CN201660715U Polysilicon raw material rinsing bath |
12/01/2010 | CN201658885U Valve for cleaning and filtering polysilicon raw material |
12/01/2010 | CN101901761A MOCVD growth method of non-polar m-surface GaN based on gamma-surface LiAlO2 substrate |
12/01/2010 | CN101901760A MOCVD growing method of polar c-plane GaN based on c-plane SiC substrate |
12/01/2010 | CN101901759A MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate |
12/01/2010 | CN101901758A MOCVD growth method of non-polar m-surface GaN film based on m-surface SiC substrate |
12/01/2010 | CN101901757A MOCVD growing method based on nonpolar a-surface GaN on a-surface 6H-SiC substrate |
12/01/2010 | CN101901756A MOCVD growing method of polar c surface GaN film based on c surface Al2O3 substrate |
12/01/2010 | CN101899713A Polycrystalline superhard material with gradient nano-micro structure and synthesis method thereof |
12/01/2010 | CN101899712A Thermoreversible physical gel photonic crystal material and preparation method thereof |
12/01/2010 | CN101899711A Thulium-doped gadolinium oxyorthosilicate scintillator and preparation method thereof |
12/01/2010 | CN101899710A Trivalent rare earth cerium and ytterbium ion codoped yttrium aluminum garnet laser crystal and manufacturing method thereof |
12/01/2010 | CN101899709A Method for preparing titanium dioxide nano rod array with adjustable size and density on titanium surface |
12/01/2010 | CN101899708A Tetrapod-like zinc oxide/ferrite film material and preparation method thereof |
12/01/2010 | CN101899707A Device and method for casting polycrystalline silicon ingot |
12/01/2010 | CN101899705A Guide die structure for growing extra-thick monocrystal alumina wafer |
12/01/2010 | CN101126173B Fluid level position monitoring apparatus of melt in growth process of silicon single crystal |
11/30/2010 | US7842338 Proteolytic deposition of titanium/zirconium oxides; semiconductors; transparencies; photocatalysts |
11/30/2010 | US7842132 Optical element, light emitting device and method for producing optical element |
11/25/2010 | US20100295056 Iii-nitride materials including low dislocation densities and methods associated with the same |
11/25/2010 | DE112008003322T5 Vorrichtung und Verfahren zum Herstellen eines Einkristalls Apparatus and method for manufacturing a single crystal |
11/24/2010 | EP2253746A2 Coloured diamond |
11/24/2010 | EP2253745A2 Coloured Diamond |
11/24/2010 | EP2253733A1 High colour diamond |
11/24/2010 | EP1537259B1 Method for altering the colour of a single crystal cvd diamond and diamond layer produced thereby |
11/24/2010 | EP1466041B1 Coloured diamond |
11/24/2010 | EP1270769B1 Method for producing silicon single crystal having no flaw |
11/24/2010 | CN201648567U Polysilicon decomposing furnace |
11/24/2010 | CN201648565U Thermal field system for silicon single crystal furnace |
11/24/2010 | CN201648564U Single crystal furnace seed crystal origin switch device |
11/24/2010 | CN201648563U Gold-plating heat insulation single crystal furnace window |