Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2010
12/29/2010EP2267192A1 Quartz glass crucible, method for manufacturing quartz glass crucible and application of quartz glass crucible
12/29/2010EP2267190A1 Large area, uniformly low dislocation density gan substrate and process for making the same
12/29/2010EP2267189A1 High surface quality gan wafer and method of fabricating same
12/29/2010EP2267188A1 Single-crystal growth apparatus and raw-material supply method
12/29/2010EP1743055B1 Method and apparatus for the growth of semiconductor, particularly silicon, ribbons
12/29/2010EP1335421B1 Production method for silicon wafer
12/29/2010CN201686765U Polycrystalline furnace thermal field
12/29/2010CN201686764U Resistance heater for crystal pulling furnace
12/29/2010CN201686763U Single crystal furnace deflation device
12/29/2010CN101932758A Method for growing alxga1-xn single crystal
12/29/2010CN101932757A Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
12/29/2010CN101932756A Zno-based substrate, method for processing zno-based substrate, and zno-based semiconductor device
12/29/2010CN101932524A Iii-v nanoparticles and method for their manufacture
12/29/2010CN101930148A 3-stibium 4-potassium zincate compound and monocrystal as well as preparation method and application thereof
12/29/2010CN101928990A Epitaxial growth method of GeSn alloy
12/29/2010CN101928989A Neodymium-doped lithium barium ytterbium tungstate laser crystal and preparation method and application thereof
12/29/2010CN101928988A Erbium-doped lithium barium gadolinium tungstate laser crystal as well as preparation method and application thereof
12/29/2010CN101928987A Novel infrared nonlinear optical crystal Rb3V5O14
12/29/2010CN101928986A Process for preparing magnesium borate whiskers with high aspect ratio by utilizing carnallite
12/29/2010CN101928985A Quadrilateral zinc oxide/ nickel ferrite material and preparation method thereof
12/29/2010CN101928984A Cuprous iodide crystal growing method
12/29/2010CN101928982A Silicon carbide crystal growing device with double-chamber structure
12/29/2010CN101928980A Seeding guidance die for growing silicon crystal by directional solidification method
12/29/2010CN101928971A Method for preparing Te nanorod array by non-template electrochemical deposition
12/29/2010CN101928003A Solar polycrystalline silicon bell-type DS purifying furnace
12/29/2010CN101565192B Methods for preparing anhydrous lithium iodide and scintillation crystal doped with lithium iodide
12/29/2010CN101559492B Preparation method of metal nanometer line with controllable size
12/29/2010CN101496126B 等离子体显示面板 The plasma display panel
12/29/2010CN101060102B Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device
12/29/2010CA2765901A1 Diamond material
12/29/2010CA2765898A1 Method for treating single crystal cvd diamond and product obtained
12/29/2010CA2765808A1 Method for making fancy pale blue or fancy pale blue/green single crystal cvd diamond and product obtained
12/29/2010CA2765804A1 Method for making fancy orange coloured single crystal cvd diamond and product obtained
12/28/2010US7858181 Growth of single crystal nanowires
12/23/2010WO2010147625A2 Systems and methods for determining process conditions in confined volumes
12/23/2010WO2010146853A1 Silicon monocrystal and production method for same
12/23/2010WO2010146212A1 Compound for producing a phototherapy drug
12/23/2010WO2010146129A1 Molecular beam epitaxy apparatus for producing wafers of semiconductor material
12/23/2010US20100323160 ZnO-BASED THIN FILM
12/22/2010EP2264743A1 Group iii nitride semiconductor element and epitaxial wafer
12/22/2010EP2264228A1 Aln bulk single crystal, semiconductor device, and process for producing aln single crystal bulk
12/22/2010EP2264227A1 Zinc oxide single crystal and method for producing the same
12/22/2010EP2264226A1 Quartz glass crucible and process for producing the same
12/22/2010EP2264225A1 Molecular beam epitaxy apparatus for producing wafers of semiconductor material
12/22/2010EP2264224A1 Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
12/22/2010EP2264223A2 Micropipe-free silicon carbide and related method of manufacture
12/22/2010EP2262935A1 Method of preparing zinc oxide (zno) polycrystals and single crystals on a seed by chemically activated high-temperature sublimation and device for implementing it
12/22/2010EP2262934A1 Method and apparatus for growth of high purity 6h-sic single crystal
12/22/2010EP2262933A1 Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell
12/22/2010EP2262932A1 Method for the crystallogenesis of a material electrically conducting at the molten state
12/22/2010EP2262931A1 Forming glutathione-capped and metal-doped zinc selenide/zinc sulfide core-shell quantum dots in aqueous solution
12/22/2010CN201678766U Vacuum feeder
12/22/2010CN201678765U Combined electrode insulation ring
12/22/2010CN201678764U Guide mode structure used for growing super-thick large-single crystal alumina wafers
12/22/2010CN201678762U Graphite crucible for preparing monocrystalline silicon with Czochralski method
12/22/2010CN201678459U Electric silicon tetrachloride heater
12/22/2010CN201678458U Nozzle of polysilicon reduction furnace
12/22/2010CN101925696A Method for manufacturing iii metal nitride single crystal
12/22/2010CN101925695A Iii-group nitride single-crystal ingot, iii-group nitride single-crystal substrate, method for manufacturing iii-group nitride single-crystal ingot, and method for manufacturing iii-group nitride single-crystal substrate
12/22/2010CN101924023A Vapor phase epitaxy apparatus of group III nitride semiconductor
12/22/2010CN101922045A GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture
12/22/2010CN101922044A Method for doping nano-Ag particles in TiO2 nanotubes
12/22/2010CN101922043A Pane-shaped TiO2 material and preparation method thereof
12/22/2010CN101922041A Method for pulling a silicon single crystal
12/22/2010CN101922040A Device of oxygen control growth in single crystal furnace
12/22/2010CN101921196A Organic amine phosphate nonlinear optical crystal [C6H9N3O2][HPO4]
12/22/2010CN101920960A Method for preparing solar grade polysilicon by metallurgy method and polysilicon prepared thereby
12/22/2010CN101521202B Controlled edge resistivity in a silicon wafer
12/22/2010CN101275281B Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal
12/22/2010CN101185913B Method for separating metallicity and semiconductivity nano-tube from single wall carbon nano-tube
12/21/2010US7854804 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
12/21/2010CA2563837C Inorganic mesoporous substance having chiral twisted structure and process for producing the same
12/21/2010CA2460956C Tetrapeptide derivative crystals
12/16/2010WO2010143748A1 Method for growing single crystal of group iii metal nitride and reaction vessel for use in same
12/16/2010WO2010143593A1 Oxide and magneto-optical device
12/16/2010WO2010143476A1 Device for producing silicon carbide single crystals
12/16/2010WO2010105715A8 Pyroelectric material - radiation sensor - method of making a radiation sensor - use of lithium tantalate and lithium niobate
12/16/2010WO2010104656A3 Rapid crystallization of heavily doped metal oxides and products produced thereby
12/16/2010US20100317136 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
12/16/2010CA2802002A1 Oxide and magneto-optical device
12/15/2010EP2261989A2 High voltage switching devices and process for forming same
12/15/2010EP2261988A2 High voltage switching devices and process for forming same
12/15/2010EP2261402A1 Method and System for the Synthesis of Semiconductor Nano-wires
12/15/2010EP2261401A1 Nitride semiconductor crystal and manufacturing method thereof
12/15/2010EP1670976B1 Spinel articles
12/15/2010EP1559812B1 Method of measuring point defect distribution of silicon single crystal ingot
12/15/2010EP1178129B1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof
12/15/2010EP1041610B1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
12/15/2010CN201670895U Reduction furnace feeding control system
12/15/2010CN201670890U Special-shaped graphite crucible for monocrystalline silicon production
12/15/2010CN101919076A Group III nitride semiconductor device, epitaxial substrate, and method for manufacturing group iii nitride semiconductor device
12/15/2010CN101918625A Method for growing gallium nitride crystal and method for producing gallium nitride substrate
12/15/2010CN101918624A Process for producing laminate comprising Al-based group III nitride single crystal layer, laminate produced by the process, process for producing Al-based group III nitride single crystal substrate using the laminate, and aluminum nitride single cry
12/15/2010CN101918623A Reduction of air pockets in silicon crystals by avoiding the introduction of nearly insoluble gases into the melt
12/15/2010CN101914812A Method for preparing silver-lead-bismuth-tellurium thermoelectric material
12/15/2010CN101914811A One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
12/15/2010CN101914810A Zirconium diboride whisker material and preparation method thereof
12/15/2010CN101914809A Nonlinear optical crystal of potassium borate chloride compound and preparation method as well as application thereof
12/15/2010CN101914808A Single crystal furnace thermal field capable of eliminating deposition of volatile matters outside heat shield
12/15/2010CN101914806A Unidirectional solidification furnace with improved gas path
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