| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 07/11/2002 | WO2002053812A1 Silicon single crystal wafer and method for producing silicon single crystal |
| 07/11/2002 | WO2002053811A1 Method and apparatus for growing single crystal |
| 07/11/2002 | US20020088390 Protection for a carbon material, in particular C/C composite, bowl that is to receive a crucible, such as a silica crucible for drawing silicon |
| 07/10/2002 | CN1087362C Method for improving zero dislocation yield of single crystals |
| 07/09/2002 | US6416836 Thermally annealed, low defect density single crystal silicon |
| 07/09/2002 | US6416576 Method for producing single crystal |
| 07/04/2002 | WO2002029138A3 Inp single crystal substrate |
| 07/04/2002 | US20020086119 Protective layer for quartz crucibles used for silicon crystallization |
| 07/04/2002 | US20020084451 Silicon wafers substantially free of oxidation induced stacking faults |
| 07/04/2002 | US20020083889 Thermal annealing process for producing low defect density single crystal silicon |
| 07/04/2002 | US20020083887 Process for producing a silicon melt |
| 07/04/2002 | DE10143231A1 Einkristalliner Siliziumwafer, Rohling und Herstellungsverfahren derselben Monocrystalline silicon wafer, blank and manufacturing method thereof |
| 07/03/2002 | EP1219730A1 Method for protecting a carbon based, notably C/C composite, bowl used for holding a crucible such as a silica crucible used for pulling silicon single crystals |
| 07/03/2002 | EP1218571A1 Process for preparing single crystal silicon having uniform thermal history |
| 07/03/2002 | EP1163379B1 Semiconductor wafer comprising a thin epitaxial silicon layer and method for producing same |
| 07/03/2002 | EP0973962B1 Low defect density, ideal oxygen precipitating silicon |
| 07/03/2002 | CN1356408A Equipment for growing raw monocrystal |
| 07/02/2002 | US6413442 Method of producing single crystal and piezoelectric element |
| 07/02/2002 | US6413313 Apparatus for producing polycrystalline silicon sheets and production method using the same |
| 07/02/2002 | US6413311 Method for manufacturing a cerium-doped lutetium oxyorthosilicate scintillator boule having a graded decay time |
| 07/02/2002 | US6413310 Czochralski method; slicing; heat treating; reduced grown-in defects; low haze and microroughness; semiconductor integrated circuits |
| 06/27/2002 | US20020081440 Characterized in that laser scattering tomography defect occurrence region accounts for 80% of wafer surface area, that laser scattering tomography defects have mean size of 0.1 mu m; semiconductor, low surface defect density |
| 06/27/2002 | US20020078880 Vacancy, dominsated, defect-free silicon |
| 06/26/2002 | EP1217103A2 Single crystal-growing method and apparatus |
| 06/26/2002 | CN1355333A Method for growing titanium gem crystal |
| 06/25/2002 | US6411391 Crystal section shape measuring method |
| 06/25/2002 | US6409833 Insulating-containing ring-shaped heat shields and support members for Czochralski pullers |
| 06/25/2002 | US6409827 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface |
| 06/25/2002 | US6409826 Low defect density, self-interstitial dominated silicon |
| 06/20/2002 | US20020076501 Method of applying a release coating to crucibles used to contain molten material while it solidifies, such as molten silicon into ingots |
| 06/20/2002 | US20020073919 Semiconductor single crystal pulling apparatus |
| 06/19/2002 | EP1215309A1 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer |
| 06/19/2002 | EP0973963B1 Low defect density silicon |
| 06/19/2002 | CN1354286A Method for implementing monocrystal growth control by using paltie effect |
| 06/12/2002 | EP1080256B1 Crystal growth apparatus and method |
| 06/12/2002 | EP0829561B1 Process for producing silicon single crystal |
| 06/12/2002 | CN1353215A Method for growing monocrystal of yttrium boride |
| 06/11/2002 | US6402839 System for stabilizing dendritic web crystal growth |
| 06/11/2002 | US6402835 Process for producing a raw material powder to grow a single crystal and the single crystal |
| 06/11/2002 | US6402834 Apparatus and method for manufacturing monocrystals |
| 06/06/2002 | WO2002044446A2 Process for controlling thermal history of vacancy-dominated, single crystal silicon |
| 06/06/2002 | WO2002024986A3 Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
| 06/06/2002 | DE10058320A1 Silicon wafer used in the production of a single crystal silicon ingot consists of a perfect domain with a lower detection boundary of agglomerates |
| 06/04/2002 | US6399203 Carbon composite fibers |
| 05/29/2002 | EP1209259A2 Low defect density, self-interstitial dominated silicon |
| 05/29/2002 | EP1209258A2 Low defect density silicon |
| 05/29/2002 | DE10058329A1 Process for growing single crystals, especially silicon single crystals comprises pulling the single crystals with rotation from a heated crucible containing a melt made from the crystal material, and cooling the crystals |
| 05/29/2002 | CN1351679A Method and apparatus for growing high quality single crystal |
| 05/23/2002 | WO2002040732A1 A protective layer for quartz crucibles used for silicon crystallization |
| 05/23/2002 | WO2002040183A1 Improved crucible coating system |
| 05/23/2002 | WO2002040182A1 Release coating system for crucibles |
| 05/22/2002 | EP1206591A2 Crucible-holder for single crystal growth |
| 05/22/2002 | CN1350602A Method and system of controlling taper growth in a semiconductor crystal growth process |
| 05/21/2002 | US6391662 Evaluating the quality of single crystal silicon; b-type defect delineating etch after heat treatment |
| 05/16/2002 | US20020056410 Method for the production of low defect density silicon |
| 05/16/2002 | DE10141554A1 Melt crucible, used for melting non-ferrous metals, especially silicon, comprises outer blocking crucible and inner quartz crucible |
| 05/15/2002 | CN1349569A Method and device for continuously pulling up crystal |
| 05/14/2002 | US6387466 Single-crystal silicon wafer |
| 05/14/2002 | US6387177 Method for manufacturing a segmented crystal |
| 05/10/2002 | WO2002036861A1 Silicon semiconductor single crystal manufacturing apparatus and manufacturing method |
| 05/09/2002 | US20020053315 Process for preparing low defect density silicon using high growth rates |
| 05/08/2002 | CN1084398C Equipment for growing high-temp. oxide crystal |
| 05/02/2002 | EP1201795A1 Semiconductor single crystal pulling apparatus |
| 05/02/2002 | EP1201794A1 Method and device for continuously pulling up crystal |
| 05/02/2002 | EP1201793A1 Method and apparatus for growing high quality single crystal |
| 05/02/2002 | EP1200649A1 Method of manufacturing crystal of silicon using an electric potential |
| 05/02/2002 | EP1200648A1 Method for producing segmented crystals |
| 05/02/2002 | DE10047346A1 Silicon wafer used for depositing a thin film epitaxial layer in the production of bipolar high performance transistors has a specific resistance |
| 04/30/2002 | US6379642 Vacancy dominated, defect-free silicon |
| 04/30/2002 | US6379460 Thermal shield device and crystal-pulling apparatus using the same |
| 04/25/2002 | US20020048670 Single crystalline silicon wafer, ingot and producing method thereof |
| 04/25/2002 | US20020046694 Single crystalline silicon wafer, ingot, and producing method thereof |
| 04/24/2002 | EP1199387A1 Method for growing single crystal of semiconductor |
| 04/24/2002 | EP1198626A2 Edge meniscus control of crystalline ribbon growth |
| 04/24/2002 | CN1345986A Silicon wafe with controlled defect distribution, its making method and caochralski pulling machine |
| 04/24/2002 | CN1083498C Oxide single crystal and method of manufacturing thereof |
| 04/18/2002 | WO2002031234A1 Crystal growth apparatus |
| 04/18/2002 | WO2002031233A1 Heat shield assembly for crystal pulling apparatus |
| 04/18/2002 | US20020043206 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
| 04/17/2002 | EP1196646A2 Dendrite thickness control system for growing silicon ribbon |
| 04/17/2002 | CN1083077C Crucible fixing method and support base and base assembly equipment |
| 04/17/2002 | CN1083019C 单晶提拉装置 Crystal pulling apparatus |
| 04/16/2002 | US6372040 Single crystal growth apparatus and single crystal growth method |
| 04/11/2002 | WO2002029138A2 Inp single crystal substrate |
| 04/11/2002 | US20020040675 Continuous crystal plate growth process and apparatus |
| 04/11/2002 | DE10047929A1 Production of semiconductor and metal wafers used in the production of solar cells comprises solidifying a melt of a semiconductor, metal or a mixture of several semiconductors and/or metals on a moving substrate |
| 04/10/2002 | EP1195455A1 Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer |
| 04/10/2002 | CN1344335A Method and appts. for controlling diameter of silicon crystal in growth process |
| 04/10/2002 | CN1082572C Method for preparing molten silcon melt from polycrystalline silicon charge |
| 04/09/2002 | US6369392 Cerium doped crystals |
| 04/04/2002 | WO2002027079A1 Crystal growth method |
| 04/04/2002 | WO2002027077A1 Method of manufacturing silicon monocrystal and device for manufacturing semiconductor monocrystal |
| 04/04/2002 | WO2002027076A1 Apparatus and method for producing semiconductor single crystal |
| 04/04/2002 | WO2001092609A3 Multilayered quartz glass crucible and method of its production |
| 04/04/2002 | DE10044163A1 Elektrophoretisch nachverdichtete SiO2-Formkörper, Verfahren zu ihrer Herstellung und Verwendung Electrophoretically recompressed SiO2-shaped bodies, processes for their preparation and use |
| 04/03/2002 | EP1193333A1 Method for preparing silicon single crystal and silicon single crystal |
| 04/03/2002 | EP1193332A1 Method for producing silicon single crystal |
| 04/03/2002 | EP1090167B1 Process and apparatus for preparation of silicon crystals with reduced metal content |
| 04/03/2002 | EP1015673B1 Heat shield assembly and method of growing vacancy rich single crystal silicon |
| 04/03/2002 | EP0972095B1 Crucible and method of preparation thereof |