Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
04/2002
04/03/2002CN1343265A Barium doping of molten silicon for use in crystal growing process
04/03/2002CN1343264A Strontium doping of molten silicon for use in crystal growing process
04/02/2002US6365461 Method of manufacturing epitaxial wafer
04/02/2002US6364947 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
03/2002
03/28/2002WO2002024986A2 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
03/28/2002DE10143761A1 Wafer used in the production of semiconductor devices comprises a region with a central axis, a region having no flow structure defect, a region with an oxidation-induced stacking fault region
03/27/2002EP1191130A1 Saucer for escaped melt in apparatus for pulling up single crystal
03/27/2002EP1090166B1 Process for growth of defect free silicon crystals of arbitrarily large diameters
03/27/2002EP1021599B1 Die for shaped crystal growth from a molten bath
03/26/2002US6361597 Single crystal material auxiliary melting apparatus and single crystal material melting method
03/20/2002EP1187950A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support
03/20/2002CN1341168A Heat shield assembly for crystal puller
03/20/2002CN1341080A Quartz glass crucible and method for production thereof
03/19/2002US6358314 Czochralski crystal growth system with an independently supported pull head
03/14/2002WO2002020882A1 Silicon sheet producing apparatus and solar cell comprising silicon sheet produced by the same
03/14/2002WO2002020424A1 Electrophoretically redensified sio2 moulded body, method for the production and use thereof
03/14/2002US20020029738 Apparatus for pulling a single crystal
03/14/2002US20020029737 Quartz glass crucible for pulling up silicon single crystal and production method therefor
03/14/2002US20020029736 Process and apparatus for producing a planar body of an oxide single crystal
03/14/2002US20020029735 Method of and apparatus for growing ribbon of crystal
03/14/2002US20020029734 Method for producing single
03/14/2002DE10041582A1 Quarzglastiegel sowie Verfahren zur Herstellung desselben Quartz glass crucible of the same and processes for preparing
03/14/2002DE10040970A1 Thermal storage material for single crystal drawing apparatus, is provided inside bulged portion of cylinder which surrounds single crystal rod
03/13/2002EP1186687A2 Method of and apparatus for growing ribbon of crystal
03/13/2002EP1185726A1 Melt depth control for semiconductor materials grown from a melt
03/13/2002EP1185725A1 Continuous melt replenishment for crystal growth
03/13/2002CN1080777C Method for preparing relaxing ferroelectric single crystal lead magnoniobate
03/12/2002US6355910 Heating element for heating crucibles and arrangement of heating elements
03/07/2002WO2001086036A3 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
03/07/2002WO2001053572A3 Crucible-holder for single crystal growth
03/06/2002CN1339072A Tungsten doped crucible and method for preparing same
02/2002
02/28/2002WO2002016678A1 Method for producing silicon single crystal
02/28/2002WO2002016677A1 Silica crucible and method for producing the same
02/28/2002DE10118482A1 Production of a single crystal comprises heating a melt in a crucible using a lateral heater which surrounds the crucible and a supporting crucible, and drawing the single crystal
02/27/2002EP1182281A1 Single crystal growing device and production method of single crystal using the device and single crystal
02/27/2002EP1182280A1 Device and method for producing single-crystal ingot
02/27/2002EP1044290B1 Crystal growing apparatus with melt-doping facility
02/27/2002EP0826796B1 Method and equipment for growing single crystals
02/27/2002CN1337476A Re-doping method for vertically pulled monocrystalline silicon
02/27/2002CN1079847C System and method for controlling growth of silicon crystal
02/26/2002US6350315 Methods of producing doped semiconductors
02/26/2002US6350314 Process for producing nitrogen-doped semiconductor wafers
02/26/2002US6350313 Method of producing a polycrystalline silicon rod
02/26/2002US6350312 Strontium doping of molten silicon for use in crystal growing process
02/21/2002WO2002015284A1 Method for manufacturing solar cell and solar cell
02/21/2002WO2002015253A1 Method of producing silicon wafer
02/21/2002WO2002014587A1 Quartz crucible and method for producing single crystal using the same
02/21/2002US20020020340 Optimized silicon wafer strength for advanced semiconductor devices
02/21/2002US20020020339 Process for preparing a silicon melt
02/21/2002DE10129489A1 Bewertungsmethode für polykristallines Silizium Evaluation method for polycrystalline silicon
02/21/2002DE10059469C2 Verfahren und Vorrichtung zum Erkennen von Kristallbaufehlern in Siliciumeinkristallen Method and apparatus for detecting crystal defects in silicon single crystals
02/20/2002EP1002144B1 Method and system for controlling growth of a silicon crystal
02/19/2002US6348870 Melt spill indicator device
02/19/2002US6348261 Silicon wafer
02/19/2002US6348180 Surface is formed of only a n2 region which is neutral and in which the amount of precipitated oxygen (.delta.oi) is large and therefore a high gettering capability is provided.
02/19/2002US6348095 Method and apparatus for pulling a single crystal
02/19/2002US6348094 SAW or LSAW device piezoelectric single crystal wafer and method of making
02/14/2002WO2000060145A9 Method and system of controlling taper growth in a semiconductor crystal growth process
02/14/2002WO2000056956A9 Method and apparatus for controlling diameter of a silicon crystal in a growth process
02/14/2002US20020017234 Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
02/13/2002CN2476566Y Seed rod device
02/07/2002WO2002010486A1 Method for detecting completion of melting of polycrystalline silicone, method for setting temperature for contacting seed crystal with melt, and apparatus for producing silicon single crystal
02/07/2002WO2002010485A1 Method for manufacturing semiconductor single crystal and apparatus for manufacturing semiconductor single crystal
02/06/2002CN2475743Y Crystal growth furnace
02/05/2002US6344083 Process for producing a silicon melt
01/2002
01/30/2002EP1175519A1 Barium doping of molten silicon for use in crystal growing process
01/30/2002CN1333844A Process of stacking and melting polycrystalline silicon of high quality single crystal production
01/30/2002CN1078632C Low-temp, -phase barium metaborate large single crystal growing by air-cooled crystal growth
01/29/2002US6342725 Silicon on insulator structure having a low defect density handler wafer and process for the preparation thereof
01/29/2002US6342688 Method for preparing iridium crucibles for crystal growth
01/24/2002WO2002007244A1 Single crystal electrolyte for fuel cells
01/24/2002US20020007780 Process and apparatus for producing an oxide single crystal
01/24/2002US20020007779 Low defect density, self-interstitial dominated silicon
01/23/2002CN1078269C Crucible lowering method and device for growth crystal
01/22/2002US6341173 Device and method for the determination of diameters of crystals
01/22/2002US6340392 Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
01/22/2002US6340391 Method for producing single crystal and pulling device
01/22/2002US6340390 Method for manufacturing silicon single crystal
01/17/2002WO2002005335A1 Single crystal wafer and solar battery cell
01/17/2002US20020005160 Apparatus for producing single crystals and method for producing single crystals
01/16/2002EP1171652A1 Method and apparatus for controlling diameter of a silicon crystal in a growth process
01/16/2002EP1171211A1 Efg crystal growth apparatus
01/16/2002EP1012357B1 Non-dash neck method for single crystal silicon growth
01/15/2002US6338757 Single crystal pull-up apparatus
01/10/2002WO2002002852A1 Silicon single crystal wafer and method for manufacturing the same
01/10/2002WO2002002851A1 Preparation of compounds based on phase equilibria of cu-in-se
01/09/2002EP1170405A1 Silicon single crystal wafer and production method thereof and soi wafer
01/09/2002EP1170404A1 Silicon wafer and production method thereof and evaluation method for silicon wafer
01/09/2002EP1170403A2 Process and apparatus for producing a planar body of an oxide single crystal
01/09/2002EP1169497A1 Method and system of controlling taper growth in a semiconductor crystal growth process
01/09/2002EP1169496A1 Strontium doping of molten silicon for use in crystal growing process
01/09/2002CN2470372Y Straight-drawing crystal grower controlled by steam pressure
01/09/2002CN2470371Y Seed-crystal-bar dynamic heat-sealing device
01/09/2002CN2470370Y Crucible-bar dynamic heat sealing device
01/09/2002CN1330173A Evaluation method for polysilicon
01/09/2002CN1330172A Soft crucible lowering down process for growing lithium fluoroaluminate crystals
01/08/2002US6337219 Method of producing silicon single and single crystal silicon wafer
01/08/2002US6336968 Non-oxygen precipitating czochralski silicon wafers
01/03/2002WO2002000970A1 Method for producing silicon single crystal
01/03/2002WO2002000969A1 Method for producing silicon wafer and epitaxial wafer, and epitaxial wafer
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