Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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04/03/2002 | CN1343265A Barium doping of molten silicon for use in crystal growing process |
04/03/2002 | CN1343264A Strontium doping of molten silicon for use in crystal growing process |
04/02/2002 | US6365461 Method of manufacturing epitaxial wafer |
04/02/2002 | US6364947 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
03/28/2002 | WO2002024986A2 Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
03/28/2002 | DE10143761A1 Wafer used in the production of semiconductor devices comprises a region with a central axis, a region having no flow structure defect, a region with an oxidation-induced stacking fault region |
03/27/2002 | EP1191130A1 Saucer for escaped melt in apparatus for pulling up single crystal |
03/27/2002 | EP1090166B1 Process for growth of defect free silicon crystals of arbitrarily large diameters |
03/27/2002 | EP1021599B1 Die for shaped crystal growth from a molten bath |
03/26/2002 | US6361597 Single crystal material auxiliary melting apparatus and single crystal material melting method |
03/20/2002 | EP1187950A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support |
03/20/2002 | CN1341168A Heat shield assembly for crystal puller |
03/20/2002 | CN1341080A Quartz glass crucible and method for production thereof |
03/19/2002 | US6358314 Czochralski crystal growth system with an independently supported pull head |
03/14/2002 | WO2002020882A1 Silicon sheet producing apparatus and solar cell comprising silicon sheet produced by the same |
03/14/2002 | WO2002020424A1 Electrophoretically redensified sio2 moulded body, method for the production and use thereof |
03/14/2002 | US20020029738 Apparatus for pulling a single crystal |
03/14/2002 | US20020029737 Quartz glass crucible for pulling up silicon single crystal and production method therefor |
03/14/2002 | US20020029736 Process and apparatus for producing a planar body of an oxide single crystal |
03/14/2002 | US20020029735 Method of and apparatus for growing ribbon of crystal |
03/14/2002 | US20020029734 Method for producing single |
03/14/2002 | DE10041582A1 Quarzglastiegel sowie Verfahren zur Herstellung desselben Quartz glass crucible of the same and processes for preparing |
03/14/2002 | DE10040970A1 Thermal storage material for single crystal drawing apparatus, is provided inside bulged portion of cylinder which surrounds single crystal rod |
03/13/2002 | EP1186687A2 Method of and apparatus for growing ribbon of crystal |
03/13/2002 | EP1185726A1 Melt depth control for semiconductor materials grown from a melt |
03/13/2002 | EP1185725A1 Continuous melt replenishment for crystal growth |
03/13/2002 | CN1080777C Method for preparing relaxing ferroelectric single crystal lead magnoniobate |
03/12/2002 | US6355910 Heating element for heating crucibles and arrangement of heating elements |
03/07/2002 | WO2001086036A3 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
03/07/2002 | WO2001053572A3 Crucible-holder for single crystal growth |
03/06/2002 | CN1339072A Tungsten doped crucible and method for preparing same |
02/28/2002 | WO2002016678A1 Method for producing silicon single crystal |
02/28/2002 | WO2002016677A1 Silica crucible and method for producing the same |
02/28/2002 | DE10118482A1 Production of a single crystal comprises heating a melt in a crucible using a lateral heater which surrounds the crucible and a supporting crucible, and drawing the single crystal |
02/27/2002 | EP1182281A1 Single crystal growing device and production method of single crystal using the device and single crystal |
02/27/2002 | EP1182280A1 Device and method for producing single-crystal ingot |
02/27/2002 | EP1044290B1 Crystal growing apparatus with melt-doping facility |
02/27/2002 | EP0826796B1 Method and equipment for growing single crystals |
02/27/2002 | CN1337476A Re-doping method for vertically pulled monocrystalline silicon |
02/27/2002 | CN1079847C System and method for controlling growth of silicon crystal |
02/26/2002 | US6350315 Methods of producing doped semiconductors |
02/26/2002 | US6350314 Process for producing nitrogen-doped semiconductor wafers |
02/26/2002 | US6350313 Method of producing a polycrystalline silicon rod |
02/26/2002 | US6350312 Strontium doping of molten silicon for use in crystal growing process |
02/21/2002 | WO2002015284A1 Method for manufacturing solar cell and solar cell |
02/21/2002 | WO2002015253A1 Method of producing silicon wafer |
02/21/2002 | WO2002014587A1 Quartz crucible and method for producing single crystal using the same |
02/21/2002 | US20020020340 Optimized silicon wafer strength for advanced semiconductor devices |
02/21/2002 | US20020020339 Process for preparing a silicon melt |
02/21/2002 | DE10129489A1 Bewertungsmethode für polykristallines Silizium Evaluation method for polycrystalline silicon |
02/21/2002 | DE10059469C2 Verfahren und Vorrichtung zum Erkennen von Kristallbaufehlern in Siliciumeinkristallen Method and apparatus for detecting crystal defects in silicon single crystals |
02/20/2002 | EP1002144B1 Method and system for controlling growth of a silicon crystal |
02/19/2002 | US6348870 Melt spill indicator device |
02/19/2002 | US6348261 Silicon wafer |
02/19/2002 | US6348180 Surface is formed of only a n2 region which is neutral and in which the amount of precipitated oxygen (.delta.oi) is large and therefore a high gettering capability is provided. |
02/19/2002 | US6348095 Method and apparatus for pulling a single crystal |
02/19/2002 | US6348094 SAW or LSAW device piezoelectric single crystal wafer and method of making |
02/14/2002 | WO2000060145A9 Method and system of controlling taper growth in a semiconductor crystal growth process |
02/14/2002 | WO2000056956A9 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
02/14/2002 | US20020017234 Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor |
02/13/2002 | CN2476566Y Seed rod device |
02/07/2002 | WO2002010486A1 Method for detecting completion of melting of polycrystalline silicone, method for setting temperature for contacting seed crystal with melt, and apparatus for producing silicon single crystal |
02/07/2002 | WO2002010485A1 Method for manufacturing semiconductor single crystal and apparatus for manufacturing semiconductor single crystal |
02/06/2002 | CN2475743Y Crystal growth furnace |
02/05/2002 | US6344083 Process for producing a silicon melt |
01/30/2002 | EP1175519A1 Barium doping of molten silicon for use in crystal growing process |
01/30/2002 | CN1333844A Process of stacking and melting polycrystalline silicon of high quality single crystal production |
01/30/2002 | CN1078632C Low-temp, -phase barium metaborate large single crystal growing by air-cooled crystal growth |
01/29/2002 | US6342725 Silicon on insulator structure having a low defect density handler wafer and process for the preparation thereof |
01/29/2002 | US6342688 Method for preparing iridium crucibles for crystal growth |
01/24/2002 | WO2002007244A1 Single crystal electrolyte for fuel cells |
01/24/2002 | US20020007780 Process and apparatus for producing an oxide single crystal |
01/24/2002 | US20020007779 Low defect density, self-interstitial dominated silicon |
01/23/2002 | CN1078269C Crucible lowering method and device for growth crystal |
01/22/2002 | US6341173 Device and method for the determination of diameters of crystals |
01/22/2002 | US6340392 Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
01/22/2002 | US6340391 Method for producing single crystal and pulling device |
01/22/2002 | US6340390 Method for manufacturing silicon single crystal |
01/17/2002 | WO2002005335A1 Single crystal wafer and solar battery cell |
01/17/2002 | US20020005160 Apparatus for producing single crystals and method for producing single crystals |
01/16/2002 | EP1171652A1 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
01/16/2002 | EP1171211A1 Efg crystal growth apparatus |
01/16/2002 | EP1012357B1 Non-dash neck method for single crystal silicon growth |
01/15/2002 | US6338757 Single crystal pull-up apparatus |
01/10/2002 | WO2002002852A1 Silicon single crystal wafer and method for manufacturing the same |
01/10/2002 | WO2002002851A1 Preparation of compounds based on phase equilibria of cu-in-se |
01/09/2002 | EP1170405A1 Silicon single crystal wafer and production method thereof and soi wafer |
01/09/2002 | EP1170404A1 Silicon wafer and production method thereof and evaluation method for silicon wafer |
01/09/2002 | EP1170403A2 Process and apparatus for producing a planar body of an oxide single crystal |
01/09/2002 | EP1169497A1 Method and system of controlling taper growth in a semiconductor crystal growth process |
01/09/2002 | EP1169496A1 Strontium doping of molten silicon for use in crystal growing process |
01/09/2002 | CN2470372Y Straight-drawing crystal grower controlled by steam pressure |
01/09/2002 | CN2470371Y Seed-crystal-bar dynamic heat-sealing device |
01/09/2002 | CN2470370Y Crucible-bar dynamic heat sealing device |
01/09/2002 | CN1330173A Evaluation method for polysilicon |
01/09/2002 | CN1330172A Soft crucible lowering down process for growing lithium fluoroaluminate crystals |
01/08/2002 | US6337219 Method of producing silicon single and single crystal silicon wafer |
01/08/2002 | US6336968 Non-oxygen precipitating czochralski silicon wafers |
01/03/2002 | WO2002000970A1 Method for producing silicon single crystal |
01/03/2002 | WO2002000969A1 Method for producing silicon wafer and epitaxial wafer, and epitaxial wafer |