Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
02/2000
02/01/2000US6019838 Crystal growing apparatus with melt-doping facility
02/01/2000US6019837 Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
02/01/2000US6019836 Method for pulling a single crystal
01/2000
01/26/2000EP0973964A1 Low defect density, self-interstitial dominated silicon
01/26/2000EP0973963A1 Low defect density silicon
01/26/2000EP0973962A1 Low defect density, ideal oxygen precipitating silicon
01/19/2000EP0972095A1 Crucible and method of preparation thereof
01/19/2000EP0972094A1 Low defect density, vacancy dominated silicon
01/18/2000US6015461 Seed crystal holders, for pulling a single crystal
01/18/2000US6015460 Method and apparatus for pulling a monocrystal
01/13/2000DE19931784A1 Semiconductor substrate for electronic circuit elements
01/13/2000DE19830785A1 Stütztiegel zur Stützung von Schmelztiegeln Support crucible in support of crucibles
01/12/2000EP0971054A1 Support crucible for supporting melt crucibles
01/12/2000EP0971053A1 Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring
01/11/2000US6013129 Production of heavily-doped silicon
01/06/2000WO2000000676A1 Electrical resistance heater for crystal growing apparatus and its method of use
01/06/2000WO2000000675A1 Crystal puller for growing low defect density, self-interstitial dominated silicon
01/06/2000WO2000000674A2 Process for growth of defect free silicon crystals of arbitrarily large diameters
01/05/2000CN1048044C Improved method for growing silicon crystal
01/04/2000US6010569 Device for handling heavy components of a crystal puller according to the Czochralski method which is supported in a supporting frame
01/04/2000US6010568 Method for adjusting initial position of melt surface
12/1999
12/29/1999CN1047810C Improvement in crystal growth
12/28/1999US6007625 Apparatus for manufacturing single crystal
12/28/1999US6007621 Apparatus for feeding raw material into a quartz crucible and method of feeding the same
12/23/1999WO1999066108A1 Process and apparatus for preparation of silicon crystals with reduced metal content
12/23/1999WO1999050482B1 Open-loop method and system for controlling growth of semiconductor crystal
12/22/1999EP0965663A1 Composite crucible, and preparation method and regeneration method thereof
12/22/1999EP0965662A1 Method for producing low defect silicon single crystal doped with nitrogen
12/21/1999US6004393 Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
12/15/1999EP0964082A1 Silicon single crystal wafer and a method for producing it
12/15/1999EP0963464A1 Melting pot with silicon protective layers, method for applying said layer and the use thereof
12/15/1999CN1047413C Single crystal ingot and its producing method
12/14/1999US6001170 Process and apparatus for the growth of single crystals
12/09/1999WO1999063393A2 Method for pressurized annealing of lithium niobate and resulting lithium niobate structures
12/09/1999WO1999063134A1 Device and method for growing crystals
12/09/1999WO1999063133A1 Electrical resistance heater for crystal growing apparatus
12/09/1999WO1999063132A1 Apparatus and method for manufacturing monocrystals, and monocrystal
12/09/1999DE19824838A1 Verfahren zum Herstellen von Kristallen A method for producing crystals of
12/08/1999EP0962557A1 Silicon single crystal wafer and method for producing silicon single crystal wafer
12/08/1999EP0962556A1 Nitrogen doped single crystal silicon wafer with few defects and method for its production
12/08/1999EP0962555A1 Process for producing a single crystal
12/07/1999US5998313 Cesium-lithium borate crystal
12/07/1999US5998050 Rare earth (or yttium) barium copper oxide
12/07/1999US5997641 Seed-crystal holder for single-crystal pulling devices with magnetic field applied thereto
12/07/1999US5997640 Device and method for liquefying and crystallizing substances
12/07/1999US5997635 Method for fabricating a single-crystal semiconductor
12/07/1999US5997234 Silicon feed system
12/02/1999WO1999061686A1 Method for producing monocrystals of lanthanum and gallium silicate
12/02/1999WO1999061685A1 Quartz glass crucible for pulling silicon monocrystal and method of manufacturing the same
12/02/1999DE19823962A1 Verfahren zur Herstellung eines Einkristalls A process for producing a single crystal
12/02/1999DE19821787A1 Partial pressure measurement of oxygen in apparatus used to pull single crystals
12/01/1999CN1046972C Crochralski growing apparatus and device for suppressing growth striation of long large-diameter monocrystalline silicon
11/1999
11/30/1999US5993902 Apparatus and method for extending the lifetime of an exhaust sleeve for growing single crystal silicon by silicon nitride (SI3 N4) coating
11/30/1999US5993545 Crucible for growing single crystals, process for making the same and use of the same
11/30/1999US5993540 Continuous crystal plate growth process and apparatus
11/30/1999US5993539 Method for pulling a single crystal
11/25/1999DE19821724A1 Electrochemical probe for determining silicon oxide partial pressure in device for pulling silicon single crystals
11/24/1999EP0959154A1 A method for producing an epitaxial silicon single crystal wafer and the epitaxial single crystal wafer
11/23/1999US5989504 Chemical process employing corrosion resistant composites
11/23/1999US5989341 Single crystal producing apparatus and a single crystal producing method using same
11/23/1999US5989021 Quartz crucible with large diameter for pulling single crystal and method of producing the same
11/23/1999US5988262 Sputtering target of single crystal aluminum alloy and method for producing the same
11/18/1999WO1999058747A1 Crystal growth apparatus and method
11/17/1999CN1235211A Injector for passing molten material
11/11/1999WO1999057344A1 Silicon semiconductor wafer and method for producing the same
11/09/1999US5980630 Manufacturing method of single crystal and apparatus of manufacturing the same
11/09/1999US5980629 Methods for improving zero dislocation yield of single crystals
11/04/1999WO1999055940A1 Method and system for supplying semi-conductor source material
11/03/1999EP0953658A1 Method of manufacturing semiconductor silicon single crystal wafer
11/02/1999US5976247 Surface-treated crucibles for improved zero dislocation performance
11/02/1999US5976246 Process for producing silicon single crystal
11/02/1999US5976245 To grow bulk semiconductor single crystals from melts of semiconductor materials contained in crucibles of crystal growing furnaces.
10/1999
10/27/1999CN1046005C Method for pulling growth of beta-barium metaborate from solvent constant level
10/27/1999CN1046004C Descent method for growing large size cesium iodide (CSI) crystal
10/26/1999US5972106 Comprising cylinder coaxially surrounding single crystal pulling rod having upper end airtightly connected to pulling chamber and lower end close to silicon melt crucible; for controlling temperature distribution and thermal history
10/19/1999US5970079 Spectral range from 2.8 microns to 3.1 microns, garnet
10/19/1999US5968267 Antivibration support for Czochralski crystal growing systems
10/19/1999US5968266 Apparatus for manufacturing single crystal of silicon
10/19/1999US5968264 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
10/19/1999US5968263 Open-loop method and system for controlling growth of semiconductor crystal
10/19/1999US5968262 Method of fabricating silicon single crystals
10/19/1999US5968260 Method for fabricating a single-crystal semiconductor
10/19/1999US5968259 High-purity quartz glass and method for the preparation thereof
10/19/1999US5966794 Method of manufacturing multiple-piece graphite crucible
10/13/1999EP0949361A2 Silicon seed crystal for the Czochralski method and method for producing a silicon single crystal
10/13/1999EP0949360A1 Process for producing a silicon single crystal by Czochralski method.
10/13/1999EP0949359A1 Process for producing a silicon single crystal by Czochralski method
10/12/1999US5964941 Crystal pulling method and apparatus
10/07/1999WO1999050482A1 Open-loop method and system for controlling growth of semiconductor crystal
10/06/1999EP0948037A1 Silicon epitaxial wafer and method for manufacturing the same
10/06/1999EP0947612A2 Apparatus for holding a crystal ingot
10/06/1999EP0947611A2 A method for producing a silicon single crystal and the silicon single crystal produced thereby
10/06/1999EP0946411A1 Method for the synthesis of group iii nitride crystals
10/05/1999US5961720 Single crystal-growing apparatus
10/05/1999US5961716 Diameter and melt measurement method used in automatically controlled crystal growth
10/05/1999US5961715 Method for pulling a single crystal
10/05/1999US5961714 Method of growing lutetium aluminum perovskite crystals and apparatus including lutetium aluminum perovskite crystal scintillators
09/1999
09/30/1999DE19911755A1 Semiconductor crystal growth apparatus for manufacturing wafers used in integrated electronic device
09/30/1999DE19813453A1 Kristall-Ziehanlage Crystal-pulling system
09/30/1999DE19813452A1 Kristall-Ziehanlage Crystal-pulling system
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