| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
|---|
| 04/15/2003 | US6546754 Apparatus for silica crucible manufacture |
| 04/10/2003 | WO2003029533A1 Single crystal semiconductor manufacturing apparatus and method, and single crystal ingot |
| 04/10/2003 | WO2003004734A9 Method for the production of low defect density silicon |
| 04/10/2003 | US20030068890 Argon/ammonia rapid thermal annealing for silicon wafers |
| 04/10/2003 | US20030068502 A surface treatment to form a quality, ultra-thin silicon wafer, first by smoothing the surface, setting annealing; high speed pulling a silicon ingot or rapidly cooling a pulled single crystal, slicing a silicon wafer off from ingot |
| 04/10/2003 | US20030068501 Single crystalline silicon wafer, ingot, and producing method thereof |
| 04/09/2003 | EP1151154B1 Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| 04/08/2003 | US6544656 Production method for silicon wafer and silicon wafer |
| 04/08/2003 | US6544490 Silicon wafer and production method thereof and evaluation method for silicon wafer |
| 04/08/2003 | US6544332 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer |
| 04/03/2003 | WO2003027362A1 Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder |
| 04/03/2003 | US20030061985 Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder |
| 03/27/2003 | US20030056715 Silicon semiconductor substrate and preparation thereof |
| 03/26/2003 | EP1294962A1 Preparation of compounds based on phase equilibria of cu-in-se |
| 03/26/2003 | CN1406292A Silicon single crystal wafer and method for producing silicon single crystal |
| 03/26/2003 | CN1406291A Method and apparatus for growing single crystal |
| 03/26/2003 | CN1405842A Silicon semiconductor base-plate and its making method |
| 03/26/2003 | CN1405841A Silicon-semiconductor lining and its producing method |
| 03/20/2003 | WO2002075025A3 Process for preparing low defect density silicon using high growth rates |
| 03/20/2003 | WO2002066714A3 Process for preparing single crystal silicon having improved gate oxide integrity |
| 03/20/2003 | US20030051661 Crystal growth apparatus |
| 03/20/2003 | US20030051660 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer |
| 03/20/2003 | US20030051658 Method and apparatus for controlling the oxygen concentration of a silicon single crystal, and method and apparatus for providing guidance for controlling the oxygen concentration |
| 03/20/2003 | US20030051657 Vacancy, dominated, defect-free silicon |
| 03/19/2003 | EP1293592A2 Silicon semiconductor substrate and preparation thereof |
| 03/19/2003 | EP1293591A2 Silicon semiconductor substrate and method for production thereof |
| 03/18/2003 | US6535092 Generators having rings supports, magnets and motors used for generation of flux energy used in medical diagnosis such as nuclear magnetic resonance, or crystallization of semiconductor subtrates |
| 03/13/2003 | WO2003021011A1 Process for eliminating neck dislocations during czochralski crystal growth |
| 03/13/2003 | US20030047132 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| 03/13/2003 | US20030047131 Method for pulling single crystal |
| 03/13/2003 | US20030047130 Process for eliminating neck dislocations during czochralski crystal growth |
| 03/12/2003 | EP1291456A1 Polycrystalline silicon rod and method for processing the same |
| 03/12/2003 | EP1290250A2 Multilayered quartz glass crucible and method of its production |
| 03/12/2003 | CN1402317A Semiconductor silicon wafer and mfg. method thereof |
| 03/12/2003 | CN1401827A Artificial crystal weighing device |
| 03/06/2003 | US20030044622 Having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. |
| 03/06/2003 | US20030041796 Method for producing silicon single crystal having no flaw |
| 03/06/2003 | US20030041795 Method for supplying CZ material |
| 03/06/2003 | US20030041623 Quartz glass crucible and process for the production thereof |
| 03/06/2003 | DE29624403U1 Growing silicon germanium mixed crystal, for use in micro-and optoelectronics - by melting e.g. one component in a crucible, fixing a solid additive component in the growth chamber above the melt, adjusting the thermal equilibrium and stabilising, etc. |
| 03/05/2003 | EP1286925A1 Method for producing quartz glass crucible |
| 03/05/2003 | CN1400336A Pyrolyzing borium nitride crucible and method |
| 03/04/2003 | US6527859 Apparatus for growing a single crystalline ingot |
| 03/04/2003 | US6527852 Semiconductor crystal growing apparatus and crystal growing method |
| 03/04/2003 | US6527851 Process for producing a planar body of an oxide single crystal |
| 02/27/2003 | WO2003016598A1 Controlled crown growth process for czochralski single crystal silicon |
| 02/26/2003 | EP1131477B1 Method for measuring polycrystalline chunk size and distribution in the charge of a czochralski process |
| 02/25/2003 | US6524668 Composite crucible, and preparation method and regeneration method thereof |
| 02/20/2003 | US20030033972 Controlled crown growth process for czochralski single crystal silicon |
| 02/19/2003 | EP1284311A2 Silicon semiconductor substrate and process for producing the same |
| 02/18/2003 | US6521316 single crystalline silicon wafer, ingot, and producing method thereof |
| 02/13/2003 | WO2002055443A3 Apparatus for silica crucible manufacture |
| 02/13/2003 | US20030030039 Cesium-lithium-borate crystal and its application to frequency conversion of laser light |
| 02/13/2003 | US20030029375 Silicon single crystal wafer fabricating method and silicon single crystal wafer |
| 02/13/2003 | US20030029195 Method for producing a quartz glass crucible for pulling up silicon single crystal and apparatus |
| 02/12/2003 | EP1282733A1 Method and device for feeding arsenic dopant into a silicon crystal growing process |
| 02/12/2003 | CN1396965A Method for controlling growth of silicon crystal to minimize growth rate and diameter deviations |
| 02/11/2003 | US6517632 Method of fabricating a single crystal ingot and method of fabricating a silicon wafer |
| 02/06/2003 | US20030024473 Crystal puller for growing monocrystalline silicon ingots |
| 02/06/2003 | US20030024468 Method and device for the production of a single crystal |
| 02/06/2003 | US20030024467 Method of eliminating near-surface bubbles in quartz crucibles |
| 02/05/2003 | EP1280945A2 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 02/05/2003 | CN1394990A Molten salt growth method of barium borophosphate monocrystal |
| 02/04/2003 | US6514337 Method of growing large-diameter dislocation-free<110> crystalline ingots |
| 02/04/2003 | US6514336 Method of growing piezoelectric lanthanide gallium crystals |
| 02/04/2003 | US6514335 High-quality silicon single crystal and method of producing the same |
| 01/30/2003 | WO2003008676A1 Method for preparing tungstate single crystal |
| 01/30/2003 | WO2002081044A3 Efg crystal growth apparatus and method |
| 01/30/2003 | WO2002055765A3 Crystal puller and method for growing single crystal semiconductor material |
| 01/30/2003 | US20030022003 Controlling distribution of defects |
| 01/29/2003 | EP1279752A1 Method and apparatus for measuring melt level |
| 01/29/2003 | EP1279644A2 Method for producing a quartz glass crucible for pulling up silicon single crystal and apparatus |
| 01/29/2003 | EP1133592B1 Method for controlling growth of a silicon crystal |
| 01/29/2003 | CN1393914A Quick annealing, silicon wafer produced by annealing and equipment for pulling crystal using direct pulling |
| 01/29/2003 | CN1393579A Process for preparing yttrium vanadate crystal |
| 01/28/2003 | US6510707 Methods for making silica crucibles |
| 01/23/2003 | US20030015131 Silicon Wafer, Method for Determining Production Conditions of Silicon Single Crystal and Method for Producing Silicon Wafer |
| 01/22/2003 | EP1277856A2 Single crystal pulling apparatus |
| 01/22/2003 | EP1171652B1 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
| 01/22/2003 | CN1392296A Silicon ingot growing device |
| 01/22/2003 | CN1099694C Sapphire pipe for gas discharge lamp and preparation method thereof |
| 01/22/2003 | CN1099476C Process and apparatus for controlling oxygen content in silicon wafers heavily doped with antimony or arsenic |
| 01/21/2003 | US6510169 Method for generating laser light and laser crystal |
| 01/16/2003 | WO2003004734A1 Method for the production of low defect density silicon |
| 01/16/2003 | WO2002044446A3 Process for controlling thermal history of vacancy-dominated, single crystal silicon |
| 01/16/2003 | US20030012899 Doped silica glass crucible for making a silicon ingot |
| 01/16/2003 | US20030012898 Silica glass crucible |
| 01/16/2003 | US20030010282 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
| 01/16/2003 | US20030010276 Method and apparatus for growing single crystal |
| 01/15/2003 | EP1275755A1 Silicon wafer and method for producing silicon single crystal |
| 01/15/2003 | EP1275754A2 Single crystal pulling apparatus |
| 01/15/2003 | CN1098938C Single crystal drawing device |
| 01/14/2003 | US6506252 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
| 01/14/2003 | US6506251 Method for producing silicon single crystal |
| 01/09/2003 | US20030008479 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing |
| 01/09/2003 | US20030008447 Method of producing epitaxial wafers |
| 01/08/2003 | EP1273684A2 Low defect density, vacancy dominated silicon |
| 01/08/2003 | EP1068375B1 Open-loop method and system for controlling growth of semiconductor crystal |
| 01/08/2003 | CN1389599A Gallium-lanthanum silicate crystal growth technology of crucible descending process |
| 01/07/2003 | US6503594 Silicon wafers having controlled distribution of defects and slip |