Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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10/12/2000 | WO2000059837A1 Method for manufacturing quartz glass crucible |
10/11/2000 | CN2400459Y High temp. oxide crystal growth furnace |
10/05/2000 | WO2000057980A1 Efg crystal growth apparatus |
10/03/2000 | US6126746 Device for holding a crystal block |
10/03/2000 | US6126745 Device for controlling crystal growth processes |
10/03/2000 | US6126742 Drawing single crystals from a body of highly pure polycrystalline material molten by inductive heating |
09/28/2000 | WO2000056956A1 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
09/28/2000 | WO2000056955A1 Method for controlling melt and method for growing crystal |
09/28/2000 | WO2000022199A9 Electrode assembly for electrical resistance heater used in crystal growing apparatus |
09/27/2000 | CN1268194A Method and system for controlling growth of a silicon crystal |
09/27/2000 | CN1267751A Vertical pulling and zone melting process of producing monocrystalline silicon |
09/21/2000 | WO2000055397A1 Production method for silicon wafer and silicon wafer |
09/21/2000 | WO2000055396A1 Method and apparatus for detecting melt level |
09/21/2000 | WO2000055395A1 Strontium doping of molten silicon for use in crystal growing process |
09/21/2000 | WO2000055394A1 Barium doping of molten silicon for use in crystal growing process |
09/21/2000 | WO2000055393A1 Method for producing silicon single crystal and apparatus for producing the same, and single crystal and wafer produced with the method |
09/21/2000 | WO1999063393A3 Method for pressurized annealing of lithium niobate and resulting lithium niobate structures |
09/20/2000 | CN1267343A Non-dash neck method for single crystal silicon growth |
09/19/2000 | US6120749 Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same |
09/19/2000 | US6120599 Silicon single crystal wafer having few crystal defects, and method for producing the same |
09/19/2000 | US6120598 Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method |
09/14/2000 | DE10004623A1 Semiconductor wafer, useful for highly integrated CMOS device production, comprises a silicon substrate having a thin epitaxial layer of extremely low localized light scatterer defect surface density |
09/13/2000 | EP1035236A1 Silicon single crystal wafer, epitaxial silicon wafer, and method for producing them |
09/13/2000 | EP1035235A1 Method for producing silicon single crystal wafer and silicon single crystal wafer |
09/13/2000 | EP1035234A1 High-quality silicon single crystal and method of producing the same |
09/13/2000 | EP1034323A1 Apparatus for use in crystal pulling |
09/12/2000 | US6117402 Using after-cooler of which both inner surface facing single crystal and outer surface facing heat-shield plate have surface emissivity values larger than 0.6 disposed between single crystal being lifted and heat shield plate |
09/12/2000 | US6117234 Single crystal growing apparatus and single crystal growing method |
09/12/2000 | US6117231 Method of manufacturing semiconductor silicon single crystal wafer |
09/12/2000 | US6117230 Process for producing a silicon single crystal, and heater for carrying out the process |
09/12/2000 | US6115903 Purge tube removal and replacement |
09/08/2000 | WO2000052236A1 Silicon wafer |
09/08/2000 | WO2000052235A1 Method for producing silicon single crystal |
09/08/2000 | WO2000052234A1 Semiconductor wafer comprising a thin epitaxial silicon layer and method for producing same |
09/08/2000 | WO2000052233A1 Apparatus for growing single crystals |
09/08/2000 | WO2000020664A9 Continuous oxidation process for crystal pulling apparatus |
09/08/2000 | WO2000013211A3 Silicon on insulator structure from low defect density single crystal silicon |
09/06/2000 | EP1033421A1 Oxidation apparatus and process for the passivation of dusts |
09/06/2000 | EP0875607B1 Silicon single crystal with no crystal defects in peripheral part of wafer |
09/06/2000 | CN1265712A Heat shield assembly and method of growing vacancy rich single crystal silicon |
09/05/2000 | US6113688 Process for producing single crystals |
09/05/2000 | US6113687 Method for making a silicon single crystal wafer |
09/05/2000 | US6113686 Single crystal growing method and apparatus |
08/31/2000 | WO2000050672A1 Single crystal growth apparatus and single crystal growth method |
08/31/2000 | WO2000050671A1 Heat shield assembly for crystal puller |
08/29/2000 | US6110272 Method for producing silicon single crystal |
08/24/2000 | WO2000022201A9 Method and apparatus for accurately pulling a crystal |
08/24/2000 | WO2000014776A3 Non-oxygen precipitating czochralski silicon wafers |
08/23/2000 | EP1030354A1 Compression bonded semiconductor device and power converter using the same |
08/23/2000 | EP1029956A1 Seed crystal and method for preparing single crystal |
08/23/2000 | EP1029955A1 Apparatus and method for producing single crystal |
08/22/2000 | US6106617 Apparatus for feeding raw material into a quartz crucible |
08/22/2000 | US6106612 Level detector and method for detecting a surface level of a material in a container |
08/22/2000 | US6106611 Insulating and warming shield for a seed crystal and seed chuck and method for using the device |
08/22/2000 | US6106610 Pulling; scattering crystallization promoter on interior wall of crucible; reducing defects |
08/17/2000 | DE19905870A1 Crystal growth unit has a seed holder with a recess allowing upwards axial movement of the seed to avoid crystal neck kinking or fracture |
08/10/2000 | WO2000046433A1 Epitaxial silicon wafer and its production method, and substrate for epitaxial silicon wafer |
08/10/2000 | WO2000046432A1 Tungsten doped crucible and method for preparing same |
08/10/2000 | WO2000046430A2 Dendrite thickness control system for growing silicon ribbon |
08/09/2000 | EP1026289A1 Quartz glass crucible for pulling up silicon single crystal and process for producing the same |
08/09/2000 | EP1025288A1 Process for preparing a silicon melt from a polysilicon charge |
08/09/2000 | EP1007225A4 High purity composite useful as a susceptor |
08/08/2000 | US6099642 Apparatus for pulling up single crystals and single crystal clamping device |
08/08/2000 | US6099641 Apparatus for pulling a single crystal |
08/02/2000 | EP1024118A2 Large diameter quartz glass crucible for pulling up single crystalline silicon |
08/02/2000 | CN1261928A Low defect density silicon |
08/01/2000 | US6096128 Silicon crystal, and device and method for manufacturing same |
07/27/2000 | DE19902302A1 Production of semiconductor single crystals in Czochralski apparatus comprises subjecting melt to ultrasound through recess in crucible base during crystal growing |
07/26/2000 | EP1021599A1 Die for shaped crystal growth from a molten bath |
07/26/2000 | EP1021598A1 Heat shield for crystal puller |
07/25/2000 | US6093913 Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections |
07/25/2000 | US6093245 Method for growing crystal |
07/25/2000 | US6093244 Silicon ribbon growth dendrite thickness control system |
07/20/2000 | WO2000042243A1 Process of stacking and melting polycrystalline silicon for high quality single crystal production |
07/19/2000 | EP1020546A1 Quartz glass crucible for pulling silicon monocrystal and method of manufacturing the same |
07/19/2000 | EP1019567A1 Method and system for controlling growth of a silicon crystal |
07/18/2000 | US6090361 Method for producing silicon for use in solar cells |
07/18/2000 | US6090222 Dislodging contaminants within vacuum pump interior by alternately opening/closing low and high pressure gas inlet valves in opposition to each other to cause pulsed and turbulent gas flow |
07/18/2000 | US6090199 Continuous melt replenishment for crystal growth |
07/18/2000 | US6090198 Method for reducing thermal shock in a seed crystal during growth of a crystalline ingot |
07/18/2000 | US6089285 Method and system for supplying semiconductor source material |
07/13/2000 | WO2000040786A1 Method for producing single crystal and pulling device |
07/11/2000 | US6086671 Method for growing a silicon single crystal |
07/11/2000 | US6086670 Silicon wafer and method for producing the same |
07/06/2000 | WO2000039370A1 Binary controller for crystal body |
07/05/2000 | EP1015673A1 Heat shield assembly and method of growing vacancy rich single crystal silicon |
07/04/2000 | US6083319 Non-linear crystals and their applications |
06/28/2000 | EP1013801A1 Process and apparatus for synthesizing and growing crystals |
06/28/2000 | EP1012357A1 Non-dash neck method for single crystal silicon growth |
06/28/2000 | CN1257943A Equipment for growing high-temp oxide crystal |
06/27/2000 | US6080238 Single crystal pulling method |
06/27/2000 | US6080237 Method for production of dislocation-free silicon single crystal |
06/22/2000 | WO2000036192A1 Method for producing silicon single crystal, and silicon single crystal and silicon wafer produced by the method |
06/21/2000 | EP0989212A4 Lanthanum gallium silicate disc and its preparation method |
06/21/2000 | CN1257556A Low defect density ideal oxygen precipitating silicon |
06/20/2000 | US6077348 Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method |
06/20/2000 | US6077347 Single crystal pulling apparatus and droppage preventing device |
06/20/2000 | US6077346 Semiconductor single crystal growing apparatus and crystal growing method |
06/20/2000 | US6077345 Silicon crystal growth melt level control system and method |
06/20/2000 | US6077343 Semiconductor substrates |