| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 03/10/2005 | US20050051080 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| 03/09/2005 | CN1591926A Doped organic semiconductor materials and process for their preparation |
| 03/03/2005 | WO2005019506A1 Process for producing single crystal and silicon single crystal wafer |
| 03/03/2005 | US20050045093 Apparatus for supplying raw material |
| 03/03/2005 | US20050045089 Method of attaching an end seal to manufactured seeds |
| 03/02/2005 | EP1509642A1 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystalline structure by means of floating-zone continuous crystallization |
| 03/02/2005 | CN1587447A Process for preparing high temperature cerium blended lutetium pyrosilicate scintillation monocrystal |
| 03/02/2005 | CN1191608C Silicon semiconductor base-plate and its making method |
| 02/24/2005 | US20050039671 Silicon single crystal wafer fabricating method and silicon single crystal wafer |
| 02/23/2005 | EP1508903A2 Endowed organic semiconductor materials and method of prepration |
| 02/23/2005 | EP1508632A1 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF |
| 02/23/2005 | CN1585838A Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| 02/23/2005 | CN1584131A System and method for growth of lithium niobate crystal with rough chemical ratio by melt injection process |
| 02/23/2005 | CN1190530C Process for preparing chemical-specific Mg-doped lithium niobate crystal with periodic polarizing microstructure |
| 02/23/2005 | CN1190525C Micro germanium-doped vertical-pulling silicon single crystal |
| 02/22/2005 | US6858307 Method for the production of low defect density silicon |
| 02/22/2005 | US6858077 Single crystalline silicon wafer, ingot, and producing method thereof |
| 02/22/2005 | US6858076 Method and apparatus for manufacturing single-crystal ingot |
| 02/18/2005 | CA2476168A1 Doped organic semiconductor materials and process for their preparation |
| 02/17/2005 | US20050034655 Crystalline filters for ultraviolet sensors |
| 02/10/2005 | WO2005013377A1 Semiconductor elements having zones of reduced oxygen |
| 02/08/2005 | US6853673 Process and device for producing a quartz glass crucible by ring-like arc, and its quartz glass crucible |
| 02/03/2005 | WO2005010242A1 Process for producing single crystal and apparatus for single crystal production |
| 02/03/2005 | US20050022722 Method for pulling a single crystal |
| 02/02/2005 | EP1502972A1 Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal |
| 02/02/2005 | CN1572733A Method for the production of an internally vitrified sio2 crucible |
| 02/02/2005 | CN1187483C Melt method for growing sosoloid monocrystal of lead niobium-zincate lead-titanate |
| 02/01/2005 | US6849901 Device layer of a silicon-on-insulator structure having vacancy dominated and substantially free of agglomerated vacancy-type defects |
| 01/27/2005 | WO2005007943A1 Method for producing crystal of fluoride |
| 01/27/2005 | WO2005007941A1 An apparatus and method for recharge raw material |
| 01/27/2005 | US20050016443 Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature |
| 01/26/2005 | EP1500633A1 Production method for compound semiconductor single crystal |
| 01/26/2005 | CN1570223A Silica glass crucible |
| 01/26/2005 | CN1570222A Sapphire crystal with absorption on ultraviolet band |
| 01/25/2005 | US6846539 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 01/25/2005 | US6846434 Aluminum oxide material for optical data storage |
| 01/20/2005 | DE10327496A1 Verfahren zur Herstellung eines Quarzglasbauteils mit hoher thermischer Stabilität A method for producing a silica glass member with high thermal stability |
| 01/19/2005 | EP1498517A1 Method for producing silicon single crystal and, silicon single crystal and silicon wafer |
| 01/19/2005 | EP1498516A1 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
| 01/19/2005 | EP1498515A1 Device for pulling monocrystals |
| 01/19/2005 | EP1497484A1 Quartz glass crucible and method for the production thereof |
| 01/19/2005 | CN1566416A Neodymium-doped lanthanum vanadate (LaVO4) laser crystal and its preparation method |
| 01/19/2005 | CN1566415A Neodymium-doped strontium-lanthanum borate ( Sr3La(BO3)3 ) laser crystal and its preparation method |
| 01/19/2005 | CN1566414A Neodymium-doped strontium-yttrium borate ( Sr3Y(BO3)3 ) laser crystal and its preparation method |
| 01/19/2005 | CN1566413A Strontium-gadolinium borate ( Sr3Gd(BO3)3 ) laser crystal and its preparation method |
| 01/19/2005 | CN1566412A Neodymium-doped gadolinium-strontium-scandium borate laser crystal and its preparation method |
| 01/18/2005 | US6844084 Spinel substrate and heteroepitaxial growth of III-V materials thereon |
| 01/18/2005 | US6843849 Method and apparatus for growing high quality single crystal |
| 01/18/2005 | US6843848 Semiconductor wafer made from silicon and method for producing the semiconductor wafer |
| 01/18/2005 | US6843847 Silicon single crystal wafer and production method thereof and soi wafer |
| 01/12/2005 | CN1563517A Method for preparing scintillating crystal of orthosilicate with bivalent cerium ions doped |
| 01/12/2005 | CN1563515A Method for developing crystal of yttrium aluminate with cerium doped |
| 01/12/2005 | CN1563514A Method for preparing crystal of rare earth aluminate doped by tervalent cerium ion |
| 01/12/2005 | CN1563513A Method for preparing single crystal of solid solution of indium lead niobate and lead titanate |
| 01/12/2005 | CN1563511A Technique for developing crystal of bismuth boric acid through falling curcible method |
| 01/12/2005 | CN1563510A Lithium niobate crystal of high stable electro light Q switch and preparation method |
| 01/11/2005 | US6841210 Multilayer structured quartz glass crucible and method for producing the same |
| 01/11/2005 | US6840997 Vacancy, dominsated, defect-free silicon |
| 01/06/2005 | WO2005001171A1 Process for producing single crystal and single crystal |
| 01/06/2005 | WO2005001170A1 Process for producing single crystal and single crystal |
| 01/06/2005 | WO2005001169A1 Method for producing single crystal and single crystal |
| 01/06/2005 | US20050000410 Manufacturing method of high resistivity silicon single crystal |
| 01/06/2005 | US20050000404 High purity silica crucible by electrolytic refining, and its production method and pulling method |
| 01/06/2005 | US20050000403 Process for producing single crystal of compound semiconductor and crystal growing apparatus |
| 01/05/2005 | CN1560332A Preparation process of yttricum aluminium garnet flare crystal mixed with three valence cerium ion |
| 01/05/2005 | CN1560329A Growing process of thulium doped yttrium aluminate laser crystal |
| 01/04/2005 | US6837952 Method for making a bowl in thermostructural composite material |
| 12/29/2004 | EP1490307A1 Spinel substrate and heteroepitaxial growth of iii-v materials thereon |
| 12/29/2004 | CN2666930Y Apparatus for growing long-size semi-insulation gallium arsenide single crystal |
| 12/29/2004 | CN1558000A Growth method of periodic polarized crystal |
| 12/29/2004 | CN1182280C Equipment for growing raw monocrystal |
| 12/28/2004 | US6835247 Rod replenishment system for use in single crystal silicon production |
| 12/28/2004 | US6835245 Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor |
| 12/23/2004 | WO2004111315A1 Method for production of a quartz glass component with high thermal stability |
| 12/23/2004 | US20040255847 Fluid sealing system for a crystal puller |
| 12/22/2004 | EP1489205A1 LUMINOUS MATERIAL FOR SCINTILLATOR COMPRISING SINGLE CRYSTAL OF Yb MIXED CRYSTAL OXIDE |
| 12/22/2004 | CN1556261A Thulium adulterated yttrium aluminate laser crystal with oulput 2 micron wave band and its preparation technology |
| 12/22/2004 | CN1556257A Upper thermal field used for six inch and eight inch adulterated phosphorus vertical pulling silicon mono crystal manufacture |
| 12/22/2004 | CN1556256A Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture |
| 12/22/2004 | CN1556255A Adulterating method used for adulterating vertical pulling silicon mono crystal and its adulterating funnel |
| 12/22/2004 | CN1181523C Non-oxygen precipitating czochralski silicon wafers |
| 12/16/2004 | US20040251333 Method and apparatus for improving silicon processing efficiency |
| 12/16/2004 | US20040250749 Method for thermally erasing information stored in an aluminum oxide data storage medium |
| 12/16/2004 | DE10324440A1 Verfahren zur Herstellung eines innenseitig verglasten SiO2-Tiegels A method for producing a glazed inner side SiO2 crucible |
| 12/16/2004 | DE10321785A1 Dauerhafter CFC-Stütztiegel für Hochtemperaturprozesse beim Ziehen von Halbleiterkristallen Permanent CFC support crucibles for high-temperature processes in pulling semiconductor crystals |
| 12/15/2004 | CN2663438Y Axial concentrator for single-crystal furnace |
| 12/15/2004 | CN2663437Y Tool for reducing silicon single crystal bar truncation edge collapse |
| 12/14/2004 | US6830740 Method for producing solar cell and solar cell |
| 12/09/2004 | WO2004106594A1 Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal |
| 12/09/2004 | WO2004106247A1 Quartz glass crucible for pulling up silicon single crystal |
| 12/09/2004 | US20040244674 Method for growing silicon single crystal |
| 12/08/2004 | CN2661710Y Concentric interconnected apparatus for single crystal growing |
| 12/08/2004 | CN1552957A Preparation of divalent cerium ion dosed rare earth silicate scintillating crystal |
| 12/08/2004 | CN1552956A Growth process for cerium dosed yttrium aluminum garnet crystal |
| 12/02/2004 | US20040237588 Method for the production of an internally vitrified SiO2 crucible |
| 12/01/2004 | CN1177956C Silicon ribbon growth dendrite thickness control system |
| 11/25/2004 | WO2004101868A1 Method for producing single crystal and single crystal |
| 11/25/2004 | DE10319300A1 Verfahren zur Herstellung eines Formkörpers aus Kieselglas A process for producing a shaped article made of silica glass |
| 11/24/2004 | EP1479269A1 Resistor made from carbonaceous material |
| 11/24/2004 | CN2658174Y Forming crystal device of raising forming crystal efficient |