| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
|---|
| 06/20/2000 | US6077342 Single crystal formed by the czochralski method and having a crystallographic axis as a pulling direction set within an angle range of 30 degrees from a b-axis (010) direction; substrate for uniform gallium nitride semiconductor thin film |
| 06/14/2000 | EP1007769A1 Device and method for growing crystals |
| 06/14/2000 | EP1007225A1 High purity composite useful as a susceptor |
| 06/14/2000 | CN1256724A Crucible and method of preparation thereof |
| 06/14/2000 | CN1256723A Low defect density, ideal oxygen precipitating silicon |
| 06/13/2000 | US6074477 Process and an apparatus for producing a composite oxide single crystal body |
| 06/06/2000 | US6072854 Method and apparatus for X-ray topography of single crystal ingot |
| 06/06/2000 | US6072118 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member |
| 06/06/2000 | US6071341 Apparatus for fabricating single-crystal silicon |
| 06/06/2000 | US6071340 Apparatus for melt-level detection in Czochralski crystal growth systems |
| 06/06/2000 | US6071339 Continuous crystal plate growth process and apparatus |
| 06/06/2000 | US6071337 Apparatus and method for producing crystals by the czochralski method and crystals produced by this method |
| 06/02/2000 | WO2000031326A1 Silicon single crystal and production method for silicon single crystal wafer |
| 06/02/2000 | WO2000031325A1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
| 06/02/2000 | WO2000031324A1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same |
| 06/02/2000 | WO2000030975A1 SiGe CRYSTAL |
| 06/02/2000 | WO2000013211A9 Silicon on insulator structure from low defect density single crystal silicon |
| 05/31/2000 | EP1004899A1 Scintillating substance and scintillating wave-guide element |
| 05/31/2000 | CN1255169A Low defect density, ideal oxygen precipitating silicon |
| 05/30/2000 | US6068925 Corrosion resistant composites useful in chemical reactors |
| 05/30/2000 | US6068699 Apparatus for fabricating semiconductor single crystal |
| 05/25/2000 | WO2000029648A1 Methods and apparatus for minimizing white point defects in quartz glass crucibles |
| 05/25/2000 | DE19854235A1 Continuous combustible metallurgical dust passivation, especially in Czochralski silicon single crystal growth units, comprises controlled dust oxidation in off-gas stream |
| 05/24/2000 | EP1002770A2 Method and apparatus for minimizing white point defects in quartz glass crucibles |
| 05/24/2000 | EP1002144A1 Method and system for controlling growth of a silicon crystal |
| 05/24/2000 | CN1254034A Bridgman-stockbarger method and its equipment |
| 05/23/2000 | US6066306 Silicon single crystal wafer having few crystal defects, and method RFO producing the same |
| 05/23/2000 | US6066205 Growth of bulk single crystals of aluminum nitride from a melt |
| 05/23/2000 | US6065543 Sealed lateral wellbore junction assembled downhole |
| 05/16/2000 | US6063189 Mechanism for clamping a crystal body in a crystal-body lifting device |
| 05/16/2000 | US6063188 Crucible with differentially expanding release mechanism |
| 05/11/2000 | WO2000026446A1 Method and system for measuring polycrystalline chunk size and distribution in the charge of a czochralski process |
| 05/11/2000 | DE19851651A1 Czochralski or floating zone crystal growth process, for growing silicon single crystal for semiconductor purposes, comprises supplying polycrystalline silicon in a consumable silicon tube |
| 05/09/2000 | US6060971 Superconducting magnet device for crystal pulling device |
| 05/09/2000 | US6059876 Method and apparatus for growing crystals |
| 05/09/2000 | US6059875 Method of effecting nitrogen doping in Czochralski grown silicon crystal |
| 05/09/2000 | US6059874 Process and device for reducing the load on a seed crystal |
| 05/04/2000 | DE19849970A1 Rotary container used in surface treatment of semiconductors has a receptacle for the product, liquid distributor and removal device |
| 05/02/2000 | US6056819 Method for pulling a single crystal |
| 05/02/2000 | US6056818 Method of manufacturing a silicon monocrystal, and method of holding the same |
| 04/26/2000 | EP0995821A1 Method and apparatus for working semiconductor material |
| 04/26/2000 | CN1251625A Lanthanum gallium silicate disc and its preparation method |
| 04/25/2000 | US6053975 Crystal holding apparatus |
| 04/25/2000 | US6053974 Heat shield for crystal puller |
| 04/20/2000 | WO2000022201A1 Method and apparatus for accurately pulling a crystal |
| 04/20/2000 | WO2000022200A1 Method and system for controlling growth of a silicon crystal |
| 04/20/2000 | WO2000022199A1 Electrode assembly for electrical resistance heater used in crystal growing apparatus |
| 04/20/2000 | WO2000022198A1 Thermally annealed, low defect density single crystal silicon |
| 04/20/2000 | WO2000022197A1 Epitaxial silicon wafers substantially free of grown-in defects |
| 04/20/2000 | WO2000022196A1 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 04/20/2000 | DE19847695A1 Single crystal, especially silicon single crystal, is grown under neck growth conditions of high pulling speed relative to the phase boundary axial temperature gradient |
| 04/20/2000 | DE19847098A1 Verfahren und Vorrichtung zur Bearbeitung von Halbleitermaterial Method and apparatus for processing semiconductor material |
| 04/18/2000 | US6051064 Apparatus for weighing crystals during Czochralski crystal growing |
| 04/13/2000 | WO2000020664A1 Continuous oxidation process for crystal pulling apparatus |
| 04/12/2000 | CN1250526A Scintillating substance and scintillating wave-guide element |
| 04/11/2000 | US6048779 Method of growing silicon monocrystal |
| 04/11/2000 | US6048395 Method for producing a silicon single crystal having few crystal defects |
| 04/05/2000 | EP0990718A1 Method of producing silicon single crystal and single crystal silicon wafer |
| 04/04/2000 | US6045611 Inserting a lithium gallium oxide (ligao2) seed crystal cut in a direction of an angle range of 30 degrees from a b-axis direction into a ligao2 melt, pulling seed crystal by the czochralski method, cutting the c-plane to obtain substrate |
| 04/04/2000 | US6045610 Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
| 03/30/2000 | WO2000000675A9 Crystal puller for growing low defect density, self-interstitial dominated silicon |
| 03/30/2000 | WO2000000674A9 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 03/29/2000 | EP0989212A1 Lanthanum gallium silicate disc and its preparation method |
| 03/29/2000 | CN2371202Y Bottom shedding translation motion type vertical pulling single-crystal furnace |
| 03/29/2000 | CN2371201Y Charging device for producing single-crystal |
| 03/28/2000 | US6043468 Carbon heater |
| 03/28/2000 | US6042646 Simple method for detecting temperature distributions in single crystals and method for manufacturing silicon single crystals by employing the simple method |
| 03/28/2000 | US6042645 Method for independently supporting the pull head of a czochralski crystal growing system |
| 03/28/2000 | US6042644 Single crystal pulling method |
| 03/21/2000 | US6039801 During growth of a semiconductor crystal an oxygen gas is continuously injected into the crystal pulling apparatus in an exhaust tunnel to continuously oxidize silicon monooxide, silicon vapor and hypostoichiometric silicon dioxide |
| 03/16/2000 | WO2000014783A1 Epitaxial wafer and method for producing the same |
| 03/16/2000 | WO2000014776A2 Non-oxygen precipitating czochralski silicon wafers |
| 03/16/2000 | WO2000014309A1 Apparatus for growing single crystal |
| 03/15/2000 | EP0734591B1 Solar cell with a new type of silicon semiconductor plate and process for producing the silicon semiconductor plate |
| 03/14/2000 | US6036776 Method and device for manufacturing single crystals |
| 03/14/2000 | US6036775 Single crystal-growing method and apparatus |
| 03/09/2000 | WO2000013211A2 Silicon on insulator structure from low defect density single crystal silicon |
| 03/09/2000 | WO2000012787A1 Silicon single crystal wafer, epitaxial silicon wafer, and method for producing them |
| 03/09/2000 | WO2000012786A1 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 03/09/2000 | DE19840200A1 Klassiervorrichtung Classifier |
| 03/08/2000 | EP0983804A1 Classifying arrangement |
| 03/07/2000 | US6034036 Mixed oxide |
| 03/07/2000 | US6033472 Semiconductor single crystal manufacturing apparatus |
| 02/29/2000 | US6030451 Two camera diameter control system with diameter tracking for silicon ingot growth |
| 02/29/2000 | US6030450 Method of fabricating a silicon single crystal |
| 02/29/2000 | US6030449 Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof |
| 02/24/2000 | WO2000009784A1 Method and system for stabilizing dendritic web crystal growth |
| 02/24/2000 | CA2340404A1 Method and system for stabilizing dendritic web crystal growth |
| 02/22/2000 | US6027562 Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method |
| 02/17/2000 | WO2000008239A1 Seed crystal and method for preparing single crystal |
| 02/17/2000 | WO2000008238A1 Semiconductor crystal growing apparatus and crystal growing method |
| 02/10/2000 | WO2000006811A1 Quartz glass crucible for pulling up silicon single crystal and process for producing the same |
| 02/10/2000 | WO1999061686A9 Method for producing monocrystals of lanthanum and gallium silicate |
| 02/09/2000 | EP0977637A1 Corrosion resistant composites useful in chemical reactors |
| 02/09/2000 | EP0559921B1 Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound |
| 02/08/2000 | US6022411 Single crystal pulling apparatus |
| 02/03/2000 | DE19935184A1 Czochralski production of heavy silicon single crystals, for making large diameter silicon wafers, uses a relatively low maximum cusp magnetic field intensity at the crucible inner wall |
| 02/02/2000 | EP0946411A4 Method for the synthesis of group iii nitride crystals |
| 02/01/2000 | US6019842 Method and apparatus for loading raw material into a quartz crucible |
| 02/01/2000 | US6019841 Method and apparatus for synthesis and growth of semiconductor crystals |