Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
10/2002
10/01/2002US6458203 System for manufacturing a single-crystal ingot employing czochralski technique, and method of controlling the system
10/01/2002US6458202 Process for preparing single crystal silicon having uniform thermal history
10/01/2002US6458201 Apparatus for producing single crystals and method for producing single crystals
10/01/2002US6458199 Crystallization apparatus and method using non-vacuum process
09/2002
09/26/2002WO2002075025A2 Process for preparing low defect density silicon using high growth rates
09/26/2002WO2002059401A8 Energy pathway arrangement
09/26/2002US20020134302 Heat shield assembly for crystal puller
09/26/2002DE10114698A1 Component made from quartz glass e.g. crucible having high thermal stability comprises a mold, part of which is provided with a stabilizing layer having a higher softening temperature than quartz glass
09/24/2002US6454851 Method for preparing molten silicon melt from polycrystalline silicon charge
09/19/2002WO2002072926A1 Hybrid crucible susceptor
09/19/2002US20020129760 Method of and apparatus for pulling up crystal
09/19/2002US20020129759 Method for producing silicon single crystal
09/19/2002DE10111953A1 Steuerbare Kristallunterstützung Controllable crystal support
09/19/2002DE10110635A1 Automatic control of crystal pulling device comprises initially lowering seed crystal into melt in crucible, and pulling from melt at speed of crystal growth to form crystal block
09/18/2002EP1241282A1 Method of and apparatus for pulling up crystal
09/18/2002EP1241141A2 Silica crucibles and methods for making the same
09/17/2002US6451110 Process for producing a planar body of an oxide single crystal
09/17/2002US6451108 Method for manufacturing dislocation-free silicon single crystal
09/17/2002US6451107 Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defects of the single crystal
09/14/2002CA2375384A1 Method of and apparatus for pulling up crystal
09/12/2002WO2002070414A1 Method for producing a quartz glass crucible
09/12/2002US20020124795 Crystal support
09/12/2002US20020124792 Crystal puller and method for growing single crystal semiconductor material
09/12/2002US20020124791 Silicon wafer and method for producing the same
09/11/2002EP1090168B1 Electrical resistance heater for crystal growing apparatus and its method of use
09/11/2002CN2510507Y Low-oxy-carbon monocrystal-silicon composite feeding-material self-unloading mechanism
09/10/2002US6447603 Process and apparatus for producing oxide single crystals
09/10/2002US6447602 Crystal growth apparatus and method
09/10/2002US6447601 Crystal puller and method for growing monocrystalline silicon ingots
09/06/2002WO2002068733A1 Manufacturing a cerium-doped lutetium oxyorthosilicate scintillator boule
09/06/2002WO2002068732A1 Recharge pipe for solid multicrystal material, and single crystal producing method using the same
09/05/2002US20020122286 Energy pathway arrangement
09/05/2002US20020121238 Process for preparing single crystal silicon having improved gate oxide integrity
09/05/2002US20020121237 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
09/04/2002EP1084286B1 Electrical resistance heater for crystal growing apparatus
09/04/2002EP0973964B1 Low defect density, self-interstitial dominated silicon
09/04/2002EP0751242B1 Process for bulk crystal growth
09/03/2002US6444028 Charging material and holding system for the charging material
08/2002
08/29/2002WO2002066714A2 Process for preparing single crystal silicon having improved gate oxide integrity
08/29/2002US20020117106 Crystal holding apparatus
08/22/2002WO2002064866A1 Method for fabricating silicon single crystal
08/22/2002WO2000022198A9 Thermally annealed, low defect density single crystal silicon
08/22/2002US20020113265 Silicon on insulator structure having a low defect density device layer and a process for the preparation thereof
08/22/2002US20020112658 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth
08/22/2002DE10102126A1 Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium Method and apparatus for producing a single crystal of silicon
08/21/2002CN1365403A Silicom wafer and method for producing silicon wafer crystal
08/15/2002WO2002063074A1 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
08/15/2002US20020110168 Method for generating laser light and laser crystal
08/15/2002US20020108558 Method for increasing charge size for single crystal silicon production
08/15/2002US20020108557 Rod replenishment system for use in single crystal silicon production
08/14/2002EP1231301A1 Epitaxial silicon wafer
08/14/2002EP1230447A1 Method of controlling growth of a semiconductor crystal
08/14/2002EP1127175B1 Process for preparing defect free silicon crystals which allows for variability in process conditions
08/13/2002US6432538 Carbon fiber reinforced carbon composite and useful as components for pulling single crystal apparatus
08/13/2002US6432198 Method for growing a semiconductor crystal from a semiconductor melt
08/13/2002US6432197 Process for the preparation of non-oxygen precipitating Czochralski silicon wafers
08/08/2002WO2002060827A2 Method for quartz crucible fabrication
08/08/2002US20020106826 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
08/08/2002US20020104475 Method of growing large-diameter dislocation-free<110> crystalline ingots
08/08/2002DE10103691A1 Elektrische Energieversorgung für eine elektrische Heizung Electric power supply for electric heating
08/07/2002EP1229155A1 Silicon wafer, silicon epitaxial wafer, anneal wafer and method for producing them
08/07/2002CN1362545A Lithium niobate crysal with near stoichiometric ratio and its growth process
08/07/2002CN1362544A Forming process of seed crystal bar chuck
08/07/2002CN1362543A Growth process of magnesium silicate crystal with doped quadrivalent chromium
08/06/2002US6428618 Providing seed crystal having first diameter at least as great as solid solution alloy crystal to be formed, forming solid solution alloy crystal from a liquid, the liquid having a concentration including at least one alloy element
08/06/2002US6428617 Method and apparatus for growing a single crystal in various shapes
08/06/2002CA2217705C Laser material
08/01/2002WO2002059401A2 Energy pathway arrangement
08/01/2002WO2002059400A2 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
08/01/2002WO2002059399A2 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
08/01/2002WO2002059061A1 Method for making a carbon/carbon crucible holder and resulting crucible stand
08/01/2002US20020100410 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
08/01/2002CA2432396A1 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
07/2002
07/31/2002EP1226291A1 Growth of bulk single crystals of aluminum
07/31/2002CN2503077Y Seed rod centering controller
07/31/2002CN1361834A Growth of bulk single crystals of aluminum
07/30/2002US6426133 Graphite material coated with silicon carbide
07/25/2002WO2002057519A1 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth
07/25/2002WO2002057518A2 Apparatus and process for the preparation of low-iron_contamination single crystal silicon
07/25/2002WO2001063022A3 Controlled neck growth process for single crystal silicon
07/25/2002US20020098358 Silicon seed crystal and method for producing silicon single crystal
07/25/2002US20020096109 Apparatus for growing a single crystalline ingot
07/25/2002DE10102081A1 Crystal pulling device comprises an evacuated boiler and a lifting unit having a gripper connected to an oven boiler component to lift it with a sluice chamber
07/24/2002EP1225255A1 Process and apparatus for producing silicon single crystal
07/24/2002EP1224671A1 A device for generating a variable magnetic field
07/24/2002EP1224492A1 Titanium-indiffusion waveguides
07/23/2002US6423615 Silicon wafers for CMOS and other integrated circuits
07/23/2002US6423285 Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the method
07/23/2002US6423137 Single crystal material supplying apparatus and single crystal material supplying method
07/23/2002US6423135 Method for manufacturing a single crystal
07/18/2002WO2002056341A2 Highly p-doped vacancy dominated silicon wafers substantially free of oxidation induced stacking
07/18/2002WO2002055765A2 Crystal puller and method for growing single crystal semiconductor material
07/18/2002WO2002055443A2 Apparatus for silica crucible manufacture
07/18/2002WO2002015284A8 Method for manufacturing solar cell and solar cell
07/18/2002US20020092465 Binary and ternary crystal purification and growth method and apparatus
07/18/2002US20020092461 Process and apparatus for producing a silicon single crystal
07/18/2002US20020092460 Process for growth of defect free silicon crystals of arbitrarily large diameters
07/17/2002EP1222325A1 Method for producing czochralski silicon free of agglomerated self-interstitial defects
07/17/2002EP1222324A1 Czochralski process for growing single crystal silicon by controlling the cooling rate
07/17/2002CN1358884A Apparatus and method for making single crystal
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