Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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11/24/2004 | CN1548590A Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace |
11/23/2004 | US6821344 Czochralski pullers including heat shield housings having sloping top and bottom |
11/18/2004 | US20040226504 Apparatus and method for supplying crystalline materials in Czochralski method |
11/18/2004 | US20040226317 Durable CFC support crucible for high-temperature processes in the pulling of semiconductor single crystals |
11/17/2004 | EP1294962B1 Preparation of compounds based on phase equilibria of cu-in-se |
11/17/2004 | CN2656436Y Inner lager transparent electric arc quartz crucible fusion machine |
11/17/2004 | CN1546748A Method for preparing fluorinion doped lead tungstate scintillation crystal |
11/17/2004 | CN1546745A CsI(Tl) crystal growth technology using elemental powder as deoxidizer |
11/16/2004 | US6818197 Epitaxial wafer |
11/11/2004 | WO2004097080A1 Quartz glass crucible for pulling up silicon single crystal and method for manufacture thereof |
11/11/2004 | WO2004097079A2 Source material feeder apparatus for industrial crystal growth systems |
11/11/2004 | US20040221794 Device and method for measuring position of liquid surface of melt in single-crystal-growing apparatus |
11/10/2004 | CN1544712A Integrated melt method for crystal growth |
11/10/2004 | CN1544711A Method for growing gadolinium orthosilicate monocrystal |
11/10/2004 | CN1544710A Apparatus and method for melting stock supplementing grown crystal |
11/10/2004 | CN1544709A Method for growing gadolinium orthosilicate scintillation crystal |
11/09/2004 | US6815741 III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystal |
11/09/2004 | US6815605 Silicon single crystal and wafer doped with gallium and method for producing them |
11/09/2004 | US6815352 Silicon focus ring and method for producing the same |
11/09/2004 | US6814802 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
11/04/2004 | WO2004094705A1 Apparatus for producing fluoride crystal |
11/04/2004 | WO2002020424A8 Electrophoretically redensified sio2 moulded body, method for the production and use thereof |
11/04/2004 | US20040216659 Method of making an epitaxial wafer |
11/04/2004 | US20040216486 Method for the production of a shaped silica glass body |
11/04/2004 | DE102004004536A1 Siliciumeinkristall und Verfahren zu dessen Herstellung Silicon single crystal and method of producing the |
11/03/2004 | CN1541961A Method for the production of a shaped silica glass body |
11/03/2004 | CN1174124C Growth of bulk single crystals of aluminum |
11/02/2004 | US6813081 Etalon and method for producing etalon |
11/02/2004 | US6811607 Method for forming aluminum oxide material used in optical data storage |
10/28/2004 | WO2004092456A1 Single crystal producing method |
10/28/2004 | WO2004092455A1 Process for producing single crystal |
10/28/2004 | WO2004091767A1 Method for the production of semiconductor granules |
10/28/2004 | US20040211496 vessels comprising reaction bonded silicon nitride used for solidification of crystal structured silicon castings; crystallization |
10/28/2004 | US20040211359 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot |
10/28/2004 | US20040211358 Source material feeder apparatus for industrial crystal growth systems |
10/28/2004 | US20040211354 Thermostructural composite material bowl |
10/27/2004 | EP1029955B1 Apparatus and method for producing single crystal |
10/27/2004 | CN1540818A Self modulated laser crystal and preparation method |
10/27/2004 | CN1540042A Method and device for prodn. of silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
10/27/2004 | CN1540041A Method for producing high purity silica crucible by electrolytic refining, mfg. method of crucible and pulling method |
10/26/2004 | US6808744 For pulling up monocrystalline silicone; superior in dimensional stability; inner quartz glass layer and an outer carbonaceouslayer, such as carbon fiber laminate; layers are integrally formed |
10/26/2004 | CA2283320C Scintillating substance and scintillating wave-guide element |
10/21/2004 | WO2004090522A1 Method and apparatus for x-ray topography of single crystal ingot |
10/21/2004 | US20040207048 Silicon wafer and manufacturing method thereof |
10/21/2004 | US20040206301 Apparatus and method for pulling single crystal |
10/20/2004 | CN1172029C Method and apparatus for growing high quality single crystal |
10/19/2004 | US6805746 Method for supplying CZ material |
10/19/2004 | US6805742 Silicon semiconductor substrate and process for producing the same |
10/14/2004 | US20040200408 Shallow melt apparatus for semicontinuous czochralski crystal growth |
10/14/2004 | DE10339792A1 Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium, sowie ein Einkristall aus Silicium und davon abgetrennte Halbleiterscheiben Method and apparatus for producing a single crystal of silicon, and a single crystal of silicon and separated therefrom semiconductor wafers |
10/13/2004 | EP1370498B1 Quartz glass component and method for the production thereof |
10/12/2004 | US6802899 Silicon single crystal wafer and manufacturing process therefor |
10/06/2004 | EP1464629A2 Method for producing high purity silica crucible by electrolytic refining, crucible and pulling method |
10/05/2004 | US6800137 Binary and ternary crystal purification and growth method and apparatus |
10/05/2004 | US6800132 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer |
09/30/2004 | WO2004083497A1 Process for producing fluoride single crystal and wavelength transforming device |
09/30/2004 | WO2004083496A1 Silicon wafer, process for producing the same and method of growing silicon single crystal |
09/30/2004 | US20040192015 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
09/30/2004 | US20040187771 Silica glass crucible |
09/29/2004 | EP1462421A2 Silica glass crucible |
09/29/2004 | EP1332246B1 Process for preparing low defect density silicon using high growth rates |
09/29/2004 | EP1052222B1 SiGe CRYSTAL |
09/28/2004 | US6797062 Heat shield assembly for a crystal puller |
09/28/2004 | US6797061 Quartz glass crucible for pulling up silicon single crystal and production method therefor |
09/22/2004 | CN1167956C Scintillating substance and scintillating wave-guide element |
09/21/2004 | US6793902 Seed crystal for production of silicon single crystal and method for production of silicon single crystal |
09/16/2004 | WO2004079060A1 Method for preparing borate-based crystal and laser oscillation apparatus |
09/16/2004 | US20040177802 Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements |
09/15/2004 | CN1528956A Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field |
09/15/2004 | CN1166822C Barium doping of molten silicon for use in crystal growing process |
09/15/2004 | CN1166821C Strontium doping of molten silicon for use in crystal growing process |
09/10/2004 | WO2004076725A1 Method for producing quartz glass crucible for use in pulling silicon single crystal and quartz glass crucible produced by said method |
09/08/2004 | EP1185725B1 Continuous melt replenishment for crystal growth |
09/08/2004 | EP0990718B1 Method of producing silicon single crystal and single crystal silicon wafer |
09/08/2004 | CN1526859A Guowth process of cerium doping yttrium aluminate crystal |
09/08/2004 | CN1526858A Prepn of flash aluminate crystal doped with trivalent cerium ion |
09/07/2004 | US6786967 Ion exchange waveguides and methods of fabrication |
09/02/2004 | US20040168625 Coating silicon pellets with dopant for addition of dopant in crystal growth |
09/02/2004 | DE10306801A1 Production of hexagonal monocrystals for making semiconductor components, comprises withdrawing the crystal from a melt in the direction of the c axis and heat-treating the crystal produced |
09/01/2004 | EP1451394A1 Aluminum oxide material for optical data storage |
09/01/2004 | EP1201793B1 Method and apparatus for growing high quality single crystal |
09/01/2004 | CN2637506Y Composite crucible used for growing ball head shaped profile crystal body |
09/01/2004 | CN1164802C Artificial crystal weighing device |
08/31/2004 | US6783621 Method of manufacturing a thermostructural composite material bowl, in particular for an installation that produces silicon single crystals |
08/26/2004 | US20040166310 monocrystal for windows used in chemical reactors, autoclaves, boilers, nuclear reactors, particularly boiling-water reactors, etc; stabilized by yttrium or another transparent element in the heavy lanthanoid series |
08/24/2004 | US6780244 Method for producing a semiconductor crystal |
08/24/2004 | US6780238 Argon/ammonia rapid thermal annealing for silicon wafers |
08/24/2004 | US6780219 Method of spheridizing silicon metal powders |
08/19/2004 | US20040159803 Method for non-destructive measuring of radiation dose |
08/19/2004 | DE10156137B4 Verfahren zur Herstellung eines Kieselglastiegels mit kristallinen Bereichen aus einem porösen Kieselglasgrünkörper A method for producing a silica glass crucible with the crystalline areas of a porous silica glass green body |
08/19/2004 | DE10007179B4 Verfahren und Vorrichtung zum Dotieren einer Schmelze mit einem Dotierstoff Method and apparatus for doping a melt with a dopant |
08/18/2004 | EP1446517A1 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
08/18/2004 | CN1522230A Method of producing a quartz glass crucible |
08/17/2004 | US6776841 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer |
08/17/2004 | US6776840 Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process |
08/11/2004 | EP1185726B1 Melt depth control for semiconductor materials grown from a melt |
08/11/2004 | CN1519399A Method of mfg. monocrystal |
08/11/2004 | CN1519398A Substrate of monocrystalline silicon with heavy adulterated boron capable to compensate crystal lattice |
08/05/2004 | WO2004066390A1 Soi wafer and production method therefor |
08/05/2004 | WO2004065667A1 Process for producing single crystal |