Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
07/2001
07/05/2001WO2001048276A1 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device
07/05/2001WO2001006545B1 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
07/04/2001EP1113096A1 Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell
07/03/2001US6254677 Semiconductor crystal, and method and apparatus of production thereof
07/03/2001US6254674 Method of controllably delivering dopant by limiting the release rate of dopant from a submerged vessel
07/03/2001US6254673 Auxillary vacuum apparatus and method for crystal growth
07/03/2001US6254672 Low defect density self-interstitial dominated silicon
06/2001
06/28/2001WO2001046077A1 Quartz glass crucible and method for the production thereof
06/28/2001US20010004876 Providing seed crystal having first diameter at least as great as solid solution alloy crystal to be formed, forming solid solution alloy crystal from a liquid, the liquid having a concentration including at least one alloy element
06/28/2001US20010004874 Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell
06/26/2001US6251184 Insulating-containing ring-shaped heat shields for czochralski pullers
06/26/2001US6251181 Method for forming a solid solution alloy crystal
06/26/2001US6250698 Purge tube ring removal tool
06/26/2001US6249953 Method for assembling portions of a pulling chamber
06/21/2001WO2001044542A1 Silicon crystals, in particular for solar cells and method for the production thereof
06/21/2001DE19961126A1 Siliziumkristall, insbesondere für Solarzellen, und Verfahren zur Herstellung Silicon crystal, in particular for solar cells, and methods for preparing
06/19/2001US6248167 Method for single crystal growth and growth apparatus
06/19/2001US6247737 Holding ring tool
06/19/2001US6247701 Magnet proof magnetic fluid sealing device
06/14/2001US20010003268 Cooling controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region
06/13/2001EP1107646A1 Heating element for smelt crucibles and arrangement of heating elements
06/12/2001US6246029 High temperature semiconductor crystal growing furnace component cleaning method
06/12/2001US6245430 Semiconductor
06/07/2001DE10057413A1 Verfahren zur direkten Synthese von Indiumphosphid A process for the direct synthesis of indium phosphide
06/05/2001US6241818 Method and system of controlling taper growth in a semiconductor crystal growth process
05/2001
05/31/2001WO2001038625A2 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support
05/31/2001WO2001038611A1 Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof
05/31/2001WO2001038255A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
05/31/2001US20010001944 Stabily grown from a melt having excess lithium oxide and at least one element of magnesium, zinc, scandium or indium; excellent physical properties for optics using polarization inversion; longitudinal crystal by rotary pulling
05/31/2001US20010001943 Methods of producing doped semiconductors
05/29/2001US6238483 Apparatus for supporting a semiconductor ingot during growth
05/29/2001US6238478 Silicon single crystal and process for producing single-crystal silicon thin film
05/29/2001US6238477 Process and device for the production of a single crystal
05/25/2001WO2001036719A1 Silicon single crystal wafer and production method thereof and soi wafer
05/25/2001WO2001036718A1 Silicon wafer and production method thereof and evaluation method for silicon wafer
05/23/2001DE10048397A1 Process for restoring a quartz crucible comprises internally repairing the crucible using chemical etching, mechanically grinding or heat treatment at high temperature on the inner surface
05/22/2001US6236104 Silicon on insulator structure from low defect density single crystal silicon
05/17/2001WO2001034882A1 Silicon single crystal wafer and production method therefor
05/17/2001WO2001006545A3 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
05/16/2001CN1295632A Open-loop method and system for controlling growth of semiconductor crystal
05/15/2001US6231669 Crystal pulling unit
05/15/2001CA2232777C Method for producing silicon for use in solar cells
05/09/2001EP1098016A1 Single-crystal pulling apparatus
05/08/2001US6228167 Single crystal pulling apparatus
05/08/2001US6228165 Method of manufacturing crystal of silicon using an electric potential
05/08/2001US6228164 Process for producing a single crystal
05/02/2001CN1065288C Scintillation material on base of cesium iodide and method for its preparation
05/01/2001US6226032 Crystal diameter control system
04/2001
04/26/2001WO2001029595A1 Titanium-indiffusion waveguides
04/26/2001WO2001029593A1 Ion exchange waveguides and methods of fabrication
04/26/2001WO2001029292A1 Method of controlling growth of a semiconductor crystal
04/25/2001EP1094039A1 Method for manufacturing quartz glass crucible
04/24/2001US6222252 Semiconductor substrate and method for producing the same
04/24/2001US6221478 Surface converted graphite components and methods of making same
04/24/2001US6221156 Apparatus for growing a semiconductor crystal
04/19/2001WO2001027362A1 Silicon single-crystal wafer for epitaxial wafer, epitaxial wafer, methods for producing them, and evaluating method
04/19/2001WO2001027360A1 Electrical resistance heater for crystal growing apparatus
04/17/2001US6217649 Continuous melt replenishment for crystal growth
04/17/2001US6217648 Single crystal pull-up apparatus and single crystal pull-up method
04/11/2001EP1090169A1 Crystal puller for growing low defect density, self-interstitial dominated silicon
04/11/2001EP1090168A1 Electrical resistance heater for crystal growing apparatus and its method of use
04/11/2001EP1090167A1 Process and apparatus for preparation of silicon crystals with reduced metal content
04/11/2001EP1090166A1 Process for growth of defect free silicon crystals of arbitrarily large diameters
04/11/2001EP1004899A4 Scintillating substance and scintillating wave-guide element
04/11/2001EP0931185B1 Process for growing monocrystals
04/10/2001US6214109 Apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
04/05/2001US20010000093 Silicon single crystal wafer and a method for producing it
04/03/2001US6210477 Methods for pulling a single crystal
03/2001
03/29/2001WO2001022441A1 A device for generating a variable magnetic field
03/29/2001WO2001021865A1 Method for producing czochralski silicon free of agglomerated self-interstitial defects
03/29/2001WO2001021864A1 Process for detecting agglomerated intrinsic point defects by metal decoration
03/29/2001WO2001021861A1 Czochralski process for growing single crystal silicon by controlling the cooling rate
03/29/2001DE10027176A1 Quarzglas-Schmelztiegel und Verfahren zu seiner Herstellung Quartz glass crucible and a process for its preparation
03/29/2001CA2385508A1 A device for generating a variable magnetic field
03/28/2001EP1087042A1 Silicon wafer
03/28/2001EP1087041A1 Production method for silicon wafer and silicon wafer
03/28/2001EP1087040A1 Method for producing silicon single crystal and apparatus for producing the same, and single crystal and wafer produced with the method
03/22/2001WO2000056956A8 Method and apparatus for controlling diameter of a silicon crystal in a growth process
03/21/2001EP1085559A2 Apparatus for producing polycrystalline silicon sheets and production method using the same
03/21/2001EP1085112A2 Method of fabricating a single crystal
03/21/2001EP1084286A1 Electrical resistance heater for crystal growing apparatus
03/21/2001EP0931184B1 Process for actively controlling defects during gaas crystal growth
03/21/2001CN1288443A Si Ge crystal
03/20/2001US6203614 Cable assembly for crystal puller
03/20/2001US6203611 Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
03/20/2001US6203610 Device and a process for monitoring a melt for the production of crystals
03/15/2001WO2001018285A1 Silicon wafer and method for manufacturing the same
03/15/2001DE19959416C1 Heating element for heating a melt crucible in the production of gallium arsenide single crystals has a hollow body comprising first hollow cylindrical section and a second section
03/15/2001DE19941902A1 Verfahren zur Herstellung von mit Stickstoff dotierten Halbleiterscheiben A process for producing nitrogen-doped semiconductor wafers
03/13/2001US6200384 Method for production of silicon single crystal
03/13/2001US6200383 Melt depth control for semiconductor materials grown from a melt
03/08/2001WO2001016410A1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer
03/08/2001WO2001016409A1 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer
03/08/2001WO2001016408A1 Epitaxial silicon wafer
03/08/2001WO2001016407A1 Apparatus for supporting a semiconductor ingot during growth
03/08/2001WO2001016406A1 Process for preparing single crystal silicon having uniform thermal history
03/07/2001EP1081254A1 Process for producing nitrogen doped semiconductor wafers
03/07/2001EP1080256A1 Crystal growth apparatus and method
03/07/2001EP1080255A1 Method and system for supplying semi-conductor source material
03/06/2001US6197111 Heat shield assembly for crystal puller
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