Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
10/2001
10/04/2001WO2001073169A1 Silicon wafer and method for producing silicon single crystal
10/04/2001US20010025599 Process for producing a planar body of an oxide single crystal
10/04/2001US20010025597 Low defect density, self-interstitial dominated silicon
10/04/2001EP1138809A1 Silicon wafer and method for manufacturing the same
10/04/2001EP1138808A1 Process for producing a planar body of an oxide single crystal
10/04/2001EP0972094B1 Low defect density, vacancy dominated silicon
10/04/2001DE10014650A1 Silicon semiconductor wafer used as a substrate wafer is doped with specified concentration of hydrogen
10/02/2001US6297523 Field effect transistors
10/02/2001US6296784 Optical parametric oscillators
09/2001
09/27/2001WO2001071069A1 Method for producing silicon single crystal having no flaw
09/27/2001US20010023941 Semiconductor wafer made from silicon and method for producing the semiconductor wafer
09/26/2001EP1136596A1 Silicon wafer and its method of fabrication
09/25/2001US6294804 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
09/25/2001US6294726 Silicon with structured oxygen doping, its production and use
09/25/2001US6294017 Growth of semiconductor single crystals
09/19/2001EP1133592A1 Method and system for controlling growth of a silicon crystal
09/19/2001EP1133591A1 Electrode assembly for electrical resistance heater used in crystal growing apparatus
09/19/2001EP1133590A1 Epitaxial silicon wafers substantially free of grown-in defects
09/19/2001CN1313413A Process for growing shaped sapphire
09/18/2001US6291874 Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring
09/13/2001US20010020438 Method for manufacturing dislocation-free silicon single crystal
09/13/2001US20010020437 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
09/13/2001US20010020436 Process for producing a planar body of an oxide single crystal
09/12/2001EP1132503A2 Process and apparatus for producing oxide single crystals
09/12/2001EP1131477A1 Method and system for measuring polycrystalline chunk size and distribution in the charge of a czochralski process
09/11/2001US6287528 Method for removing dust
09/11/2001US6287382 Electrode assembly for electrical resistance heater used in crystal growing apparatus
09/11/2001US6287380 Low defect density silicon
09/06/2001US20010018889 Apparatus for growing a semiconductor crystal and method of growing the same
09/06/2001US20010018888 Process and apparatus for producing oxide single crystals
09/06/2001US20010018887 Dissolving lithium carbonate and potassium carbonate powders in solvent and spray drying around niobium pentoxide powder, then heat treating the granulated powder to produce lithium potassium niobate raw material powder
09/06/2001DE10007179A1 Method of doping melt used for production of single crystals from semiconductor material involves immersing vessel having dopant into melt in crucible, and transferring dopant into melt through first opening that forms in the vessel
09/05/2001EP1129239A1 Method and system for stabilizing dendritic web crystal growth
09/05/2001CN1311356A Method and equipment for producing single crystal of oxides
09/05/2001CN1070542C Process for bulk crystal growth
09/04/2001US6285011 Electrical resistance heater for crystal growing apparatus
09/04/2001US6284041 Process for growing a silicon single crystal
09/04/2001US6284040 Process of stacking and melting polycrystalline silicon for high quality single crystal production
09/04/2001US6284039 Epitaxial silicon wafers substantially free of grown-in defects
08/2001
08/30/2001WO2001063027A1 Method for preparing silicon single crystal and silicon single crystal
08/30/2001WO2001063026A1 Method for producing silicon single crystal
08/30/2001WO2001063023A1 Method for growing single crystal of semiconductor
08/30/2001WO2001063022A2 Controlled neck growth process for single crystal silicon
08/30/2001US20010017100 Method for stabilizing dendritic web crystal growth
08/29/2001EP1127963A2 Process for producing a raw material powder to grow a single crystal and the single crystal
08/29/2001EP1127962A1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer
08/29/2001EP1127175A1 Process for preparing defect free silicon crystals which allows for variability in process conditions
08/28/2001US6280522 Quartz glass crucible for pulling silicon single crystal and production process for such crucible
08/23/2001WO2001061081A1 Process for producing a silicon melt
08/23/2001US20010015167 Method and apparatus for doping a melt with a dopant
08/23/2001DE10007265A1 Kristallziehanlage Crystal puller
08/22/2001EP1125009A1 Method and apparatus for accurately pulling a crystal
08/22/2001EP1125008A1 Thermally annealed, low defect density single crystal silicon
08/22/2001CN1309728A Crystal growth apparatus and method
08/21/2001US6278832 Scintillating substance and scintillating wave-guide element
08/21/2001US6277501 Silicon epitaxial wafer and method for manufacturing the same
08/21/2001US6277192 Crystal pulling unit
08/16/2001WO2001059187A1 Production device for high-quality silicon single crystal
08/16/2001EP1123426A1 Continuous oxidation process for crystal pulling apparatus
08/16/2001DE10055648A1 Siliziumwafer mit gesteuerter Störstellenverteilung, Verfahren zur Herstellung desselben und Czochralski-Ziehapparate zur Herstellung von Einkristall-Siliziumrohlingen Silicon wafer with a controlled impurity, method for producing the same and Czochralski pulling apparatus for producing single crystal silicon ingots
08/14/2001US6273945 Single crystal producing apparatus and method
08/09/2001WO2001057294A1 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
08/09/2001WO2001057293A1 Single crystal growing device and production method of single crystal using the device and single crystal
08/09/2001US20010012547 Raw material for production of GaAs crystals
08/08/2001CN1307654A Crystal puller for growing low defect density, self-interstitial dominated silicon
08/08/2001CN1307653A Epitaxial silicon wafers substantially free of grown-in defects
08/07/2001US6270575 Apparatus and a method of manufacturing a crystal
08/07/2001US6270569 Melting a group iii metal, injecting ammonia into melt produces nitride microcrystal; the two then react on the surface of a seed/substrate crystal, allowing the nitride crystal to be grown; blue laser diodes
08/02/2001WO2001055485A1 Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer
08/02/2001WO2001004388A3 Edge meniscus control of crystalline ribbon growth
08/02/2001US20010010202 Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon
08/01/2001EP1120484A1 Carbon fiber reinforced carbon composite and useful as components for pulling single crystal apparatus
08/01/2001CN1305952A Method for removing templat agent from synthetic zeolite
07/2001
07/31/2001US6267816 Method for single crystal growth
07/31/2001US6267815 Method for pulling a single crystal
07/26/2001WO2001053572A2 Crucible-holder for single crystal growth
07/26/2001DE10059469A1 Recognizing crystal flaws in silicon single crystals comprises irradiating surface of single crystal shell and recognizing arrangement of silicon non-metal compound crystal from scattered light
07/25/2001EP1118697A2 Low defect density, vacancy dominated silicon
07/25/2001CN1305540A Process and apparatus for preparation of silicon crystals with preduced metal content
07/24/2001US6265683 Semiconductor material classification device
07/19/2001US20010008117 Insulating-containing ring-shaped heat shields and support members for Czochralski pullers
07/19/2001US20010008116 Method for manufacturing a cerium-doped lutetium oxyorthosilicate scintillator boule having a graded decay time
07/19/2001US20010008115 Semiconductor crystal, and method and apparatus of production thereof
07/19/2001US20010008114 Process for growth of defect free silicon crystals of arbitrarily large diameters
07/18/2001EP1115918A2 ENHANCED i n /i TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
07/18/2001EP0963464B1 Melting pot with silicon protective layers, method for applying said layer and the use thereof
07/18/2001CN1304460A Electrical resistance heater for crystal growing apparatus
07/18/2001CN1304459A Process for preparing defect free silicon crystal which allows for variability in process conditions
07/18/2001CN1304026A Combined thermal expansion equipment
07/17/2001US6261364 Semiconductor single-crystal growth system
07/17/2001US6261362 Silicon epitaxial wafer manufacturing method
07/17/2001US6261361 Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
07/12/2001DE19962449A1 Quarzglastiegel und Verfahren für seine Herstellung Quartz glass crucible and process for its preparation
07/11/2001EP1114885A1 CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF
07/11/2001EP1114454A2 Silicon on insulator structure from low defect density single crystal silicon
07/11/2001EP1114441A2 Non-oxygen precipitating czochralski silicon wafers
07/11/2001CN1303448A Method and system for supplying semiconductor source material
07/11/2001CN1302922A Technology for growth of crystal
07/10/2001US6258163 Method for producing silicon single crystal
07/09/2001WO2001064976A1 Saucer for escaped melt in apparatus for pulling up single crystal
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