Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
06/2003
06/25/2003CN1425809A Growing method for ytterbium-doped calcium fluorophosphate laser crystal
06/25/2003CN1112465C Method for forming seed crystal rod holder
06/24/2003US6583810 Accurate, automatic measurement using oscillation and one dimensional CCD camera
06/19/2003US20030113488 Device for holding a molten semiconductor material
06/19/2003US20030113449 For pulling up monocrystalline silicone; superior in dimensional stability; inner quartz glass layer and an outer carbonaceouslayer, such as carbon fiber laminate; layers are integrally formed
06/19/2003US20030111009 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
06/18/2003EP1319736A1 Silica crucible with inner layer crystallizer and method for its manufacturing
06/18/2003EP1125008B1 Thermally annealed, low defect density single crystal silicon
06/18/2003DE10204468C1 Highly pure replaceable wear insert production from expanded graphite, used as insert for semiconductor manufacturing crucible comprises placing expanded graphite into pressing mold and subjecting to pressure
06/17/2003US6580196 Piezoelectric single crystal wafer
06/17/2003US6579363 Semiconductor single crystal pulling apparatus
06/17/2003US6579362 Heat shield assembly for crystal puller
06/12/2003WO2003048431A1 Aluminum oxide material for optical data storage
06/12/2003US20030106491 Silica crucible with inner layer crystallizer and method
06/12/2003US20030106486 Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication
06/12/2003US20030106485 High resistivity silicon wafer and method of producing same using the magnetic field czochralski method
06/12/2003US20030106484 Silicon single crystal wafer and method for manufacturing the same
06/12/2003US20030106482 High resistivity silicon wafer having electrically inactive dopant and method of producing same
06/12/2003US20030106481 High resistivity silicon wafer produced by a controlled pull rate czochralski method
06/11/2003EP1123426B1 Continuous oxidation process for crystal pulling apparatus
06/11/2003CN1422994A Chromium-doped lanthanum scandium borate tunable laser crystal
06/11/2003CN1422993A Growth of LiB3O5 nonlinear optical crystal by integrating rotary crucible and molten salt Czochralski growth method
06/11/2003CN1422988A Micro germanium-doped vertical-pulling silicon single crystal
06/11/2003CN1422819A SiO2 formed body local or all glassivation, its producing method and use
06/05/2003WO2002059401A3 Energy pathway arrangement
06/05/2003US20030104920 SiO2 shaped body which is vitrified in partial regions or completely, process for its production and use
06/05/2003US20030104222 Arsenic as an n-type dopant; resistivity of 10 Omega cm to 0. 001 Omega cm; nitrogen concentration of 1 x 1013 to 1 x 1015 atoms/cm3; excellent gettering characteristics.
06/05/2003US20030101924 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
06/04/2003CN1421551A Combined crucible rotating and molten salt pulling method for growing RE3+: KGd (WO4)2 laser crystal
06/04/2003CN1421550A Melt growth process of sodium borophosphate crystal
06/04/2003CN1110838C Silicon substrate and producing method thereof
06/03/2003US6574264 Apparatus for growing a silicon ingot
06/03/2003US6572700 Semiconductor crystal, and method and apparatus of production thereof
06/03/2003US6572699 Method and apparatus for detecting melt level
05/2003
05/30/2003WO2003044249A1 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
05/29/2003US20030097978 Method of using a magnetic field furnace to manufacture semiconductor substrates
05/29/2003US20030097975 Method of growing large-diameter dislocation-free <110> crystalline ingots
05/28/2003EP1314701A1 Modification process of synthetic quartz powder and its quartz glass product
05/28/2003CN1420213A Method for producing silica glass crucible with crystallizing zone from porous silica glass parison
05/28/2003CN1109778C Re-doping method for monocrystal growth of vertically pulled silicon
05/27/2003US6570663 Calibration method and device for visual measuring systems
05/27/2003US6569535 Silicon wafer and epitaxial silicon wafer utilizing same
05/27/2003US6569237 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer
05/27/2003US6569236 Device and method for producing single-crystal ingot
05/22/2003WO2003042435A1 System for increasing charge size for single crystal silicon production
05/22/2003US20030094131 Coating a metal salt and a partial hydrolyzate of alkoxysilane oligomer on the surface of the crucible, and heating for a transparent layer
05/21/2003EP1313150A1 Method for manufacturing solar cell and solar cell
05/21/2003CN1419612A Silicon ribbon growth dendrite thickness control system
05/21/2003CN1109135C Device and method for pulling single crystal
05/20/2003US6567598 Titanium-indiffusion waveguides
05/20/2003US6565822 Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer
05/20/2003US6565654 Process and apparatus for producing a planar body of an oxide single crystal
05/20/2003US6565652 High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method
05/20/2003US6565651 Optimized silicon wafer strength for advanced semiconductor devices
05/20/2003US6565650 Single crystal pulling apparatus and pulling method
05/20/2003US6565649 Epitaxial wafer substantially free of grown-in defects
05/15/2003WO2003040036A1 Method for producing silicon
05/15/2003US20030089302 System for increasing charge size for single crystal silicon production
05/15/2003US20030089301 Single crystal production method
05/15/2003US20030089300 Apparatus and method for producing silicon semiconductor single crystal
05/14/2003EP1310583A1 Silicon single crystal wafer and method for manufacturing the same
05/14/2003CN1417388A Method of speeding smelting of polycrystalline material and bottom heater for pulling monocrystal
05/14/2003CN1417387A Surface modifying method for quartz glass crucible and surface modified crucible
05/14/2003CN1417386A Heat shielding method and heat shield for vertically pulling crystal furnace
05/13/2003US6562132 EFG crystal growth apparatus and method
05/13/2003US6562123 Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber
05/08/2003WO2003038161A1 Shallow melt apparatus for semicontinuous czochralski crystal growth
05/08/2003US20030084840 Crystal-pulling apparatus for pullig and growing a monocrystalline silicon ingot, and method therefor
05/07/2003EP1308544A1 SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SUFRACE AND DIAMETER OF ABOVE 300 mm AND ITS PRODUCTION METHOD
05/07/2003EP1308543A1 Single crystal production method
05/07/2003CN1415788A Monocrystal mfg process
05/02/2003EP0989212B1 Lanthanum gallium silicate disc and its preparation method
05/01/2003WO2002056341A3 Highly p-doped vacancy dominated silicon wafers substantially free of oxidation induced stacking
05/01/2003US20030079677 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer
05/01/2003US20030079674 Silicon semiconductor substrate and process for producing the same
05/01/2003US20030079673 Seed crystals for pulling single crystal silicon
04/2003
04/30/2003CN1414148A Method of increasing oxygen content in vertical pulling silicon single crystal rod and automatic aerator
04/30/2003CN1414147A Doping method used in vertical pulling silicon single crystal preparation and its installation
04/30/2003CN1414146A Using induction heating molybdenium crucible in hydrogen atmosphere to make Czochralski grown sapphire crystal
04/29/2003US6555194 Process for producing low defect density, ideal oxygen precipitating silicon
04/29/2003US6554898 Crystal puller for growing monocrystalline silicon ingots
04/29/2003US6553787 Method for manufacturing quartz glass crucible
04/24/2003WO2003033780A1 Method of growing piezoelectric lanthanide gallium crystals
04/24/2003WO2002057519A9 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth
04/24/2003US20030074920 Method for producing quartz glass crucible
04/23/2003EP1304400A1 Process for producing crystal multilings with exactly symmetrical single crystal regions from melts of silicon, germanium and their alloys for applications as semiconductor-, optical- and photovoltaic substrates
04/23/2003EP1304399A1 Surface modification process of quartz glass crucible
04/23/2003CN1106460C Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus
04/17/2003WO2002057518A3 Apparatus and process for the preparation of low-iron_contamination single crystal silicon
04/17/2003US20030070612 Vented susceptor
04/17/2003US20030070605 Apparatas For Growing Jingle Crystal, Method For Producing Jingle Crystal Utilizing The Apparatas And Jingle Crystal
04/17/2003US20030070585 Coating material for absorbing radiant heat, manufacturing method thereof
04/16/2003EP1302976A1 Single crystal wafer and solar battery cell
04/16/2003EP1302570A1 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device
04/16/2003CN2545219Y Device for growing low-dislocation non-doped semi-insulation gallium arsenide single crystal
04/16/2003CN1410603A Growth of high curie point lead niobate lead indate-lead titanate single crystal using crucible descending method
04/15/2003US6548886 Single crystal substrate grown by czochralski method from molten silicon containing nitrogen; heat treating; reduced defects; simple, lower cost
04/15/2003US6548131 Quartz glass crucible and process for the manufacture of the crucible
04/15/2003US6548035 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same
04/15/2003US6547875 Epitaxial wafer and a method for manufacturing the same
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