| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
|---|
| 03/06/2001 | US6197109 Method for producing low defect silicon single crystal doped with nitrogen |
| 03/06/2001 | US6197108 Silicon seed crystal, method of manufacturing the same, and method of manufacturing silicon monocrystal through use of the seed crystal |
| 02/28/2001 | EP1078296A2 Method for pressurized annealing of lithium niobate and resulting lithium niobate structures |
| 02/22/2001 | DE19939715A1 Claw for pulling single crystals has arms with holding jaws arranged on the side of the crystal block opposite the tilting bearings |
| 02/22/2001 | DE19939714A1 Claw for pulling single crystals has a sliding ring which moves on the shaft in the lowest position against a collar of the shaft, and jaws each arranged around a tilting axis on the clamping ring surrounding the throat of the crystal block |
| 02/21/2001 | CN1285009A Crystal growing apparatus with melt-doping facility |
| 02/21/2001 | CN1062319C Growth method for high-temp. phase barium metaborate (alpha-BaBxO4) |
| 02/20/2001 | US6191009 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 02/20/2001 | US6190631 Low defect density, ideal oxygen precipitating silicon |
| 02/20/2001 | US6190452 Silicon single crystal wafer and method for producing it |
| 02/20/2001 | US6189176 High pressure gas cleaning purge of a dry process vacuum pump |
| 02/15/2001 | WO2001011115A1 Method for producing segmented crystals |
| 02/15/2001 | DE19936838A1 Production of a single crystal doped with nitrogen comprises using a dopant in powdered form containing nitride-bound silicon |
| 02/15/2001 | DE19936651A1 Verfahren und Herstellung eines segmentierten Kristalls Process and producing a segmented crystal |
| 02/14/2001 | EP1076120A1 Method for producing silicon single crystal |
| 02/13/2001 | US6187090 Methods and a device for measuring melt surface temperature within apparatus for pulling a single crystal |
| 02/13/2001 | US6187089 Depositing tungsten on the inside surface of the crucible and diffusing the tungsten into the inside surface and depositing tungsten on the outside surface of the crucible and diffusing the tungsten into the outside surface |
| 02/08/2001 | WO2001009411A1 Method of manufacturing crystal of silicon using an electric potential |
| 02/08/2001 | WO2000055394A8 Barium doping of molten silicon for use in crystal growing process |
| 02/07/2001 | EP1074643A1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same |
| 02/06/2001 | US6183556 Insulating and warming shield for a seed crystal and seed chuck |
| 02/06/2001 | US6183553 Process and apparatus for preparation of silicon crystals with reduced metal content |
| 02/01/2001 | WO2001007690A1 Growth of bulk single crystals of aluminum |
| 01/30/2001 | US6180872 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member |
| 01/30/2001 | US6179914 Dopant delivery system and method |
| 01/30/2001 | US6179911 Method for manufacturing single crystal |
| 01/30/2001 | US6179910 Pulling |
| 01/25/2001 | WO2001006545A2 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME |
| 01/25/2001 | WO2001006041A1 Method and apparatus for production of a doped feed rod by ion implantation |
| 01/23/2001 | US6176923 Crucible with differentially expanding release mechanism |
| 01/23/2001 | US6176901 Dust precipitator |
| 01/23/2001 | CA2171375C Manufacturing method of a silicon wafer having a controlled bmd concentration in the bulk and a good dz layer |
| 01/18/2001 | WO2001004388A2 Edge meniscus control of crystalline ribbon growth |
| 01/18/2001 | DE10022333A1 Silicon carbide coated graphite component e.g. gas rectification tube, for silicon single crystal drawing apparatus, has graphite base adhered with primary and secondary layers of silicon carbide film |
| 01/17/2001 | EP1069214A1 Epitaxial silicon wafer and its production method, and substrate for epitaxial silicon wafer |
| 01/17/2001 | EP1068375A1 Open-loop method and system for controlling growth of semiconductor crystal |
| 01/17/2001 | CN1280634A Apparatus for use in crystal pulling |
| 01/16/2001 | US6175652 Machine vision system for analyzing features based on multiple object images |
| 01/16/2001 | US6174364 Method for producing silicon monocrystal and silicon monocrystal wafer |
| 01/16/2001 | US6174363 Method for producing silicon single crystal |
| 01/11/2001 | DE19932026A1 Device for growing silicon crystals by the Czochralski method comprises a first inductive resistor connected to a rotating head, a second inductive resistor connected to an alternating current source, and electrical connecting lines |
| 01/09/2001 | US6171395 Process and heating device for melting semiconductor material |
| 01/09/2001 | US6171393 Seed crystal and method of manufacturing single crystal |
| 01/09/2001 | US6171392 Method for producing silicon single crystal |
| 01/09/2001 | US6171391 Method and system for controlling growth of a silicon crystal |
| 01/09/2001 | US6171389 Methods of producing doped semiconductors |
| 01/03/2001 | CN1278565A Silicon mixed with structural oxygen, production method and use thereof |
| 01/03/2001 | CN1060232C Method for growing gallium antimonide single crystal by straight pulling method and apparatus |
| 01/03/2001 | CN1060231C Apparatjus for pulling silicon single crystal |
| 12/28/2000 | WO2000079032A1 A method for forming a solid solution alloy crystal |
| 12/28/2000 | DE10011697A1 Oxide superconductor film for switching element, has bi-crystal oxide superconductor film formed on bi-crystal board which has junction of predetermined length |
| 12/27/2000 | EP1063706A2 Ga-doped multicrystalline silicon, Ga-doped multicrystalline silicon wafer and method for producing the same |
| 12/26/2000 | US6165425 A quartz, graphite or a ceramic melting pot having a silicon nitride protective layer for avoiding adhesion between the melting pot and silicon melts |
| 12/21/2000 | DE19927604A1 Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung Silicon with textured oxygen doping, its preparation and use |
| 12/20/2000 | EP1061161A1 Method for producing single crystal and pulling device |
| 12/20/2000 | EP1061160A1 Silicon with structural oxygen doping, preparation and application thereof |
| 12/19/2000 | US6162708 Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer |
| 12/19/2000 | US6162292 Method of producing silicon monocrystal |
| 12/17/2000 | CA2311618A1 Silicon with structured oxygen doping, its production and use |
| 12/12/2000 | US6159438 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
| 12/12/2000 | US6159282 Method of pulling a single crystal |
| 12/07/2000 | WO2000073542A1 CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF |
| 12/07/2000 | WO2000073541A1 Cable assembly for crystal puller |
| 12/07/2000 | DE10006589A1 Heat shield, for a Czochralski single crystal silicon ingot growth apparatus, comprises an internally insulated annular housing with a sloping bottom held within the crucible by a support element |
| 12/06/2000 | CN1276026A Process for preparing silicon melt from polysilicon charge |
| 12/05/2000 | US6156119 Silicon single crystal and method for producing the same |
| 11/30/2000 | WO2000071786A1 Method and apparatus for growing high quality single crystal |
| 11/30/2000 | DE19924635A1 Composite quartz glass crucible, useful for Czochralski single crystal growth, comprises an opaque outer layer with a bubble-free transparent inner layer of separately formed inserts |
| 11/28/2000 | US6153125 Useful for an optical field including a laser and wave changing devices |
| 11/28/2000 | US6153011 Continuous crystal plate growth process and apparatus |
| 11/28/2000 | US6153009 Czochralski method; controlled pulling |
| 11/28/2000 | US6153008 Device and method for pulling a single crystal |
| 11/15/2000 | EP1052222A1 SiGe CRYSTAL |
| 11/14/2000 | US6146459 Czochralski pullers for manufacturing monocrystalline silicon ingots by controlling temperature at the center and edge of an ingot-melt interface |
| 11/09/2000 | WO2000066818A1 Method and device for continuously pulling up crystal |
| 11/09/2000 | WO2000066817A1 Melt depth control for semiconductor materials grown from a melt |
| 11/09/2000 | WO2000066816A1 Continuous melt replenishment for crystal growth |
| 11/07/2000 | US6143633 In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon |
| 11/07/2000 | US6143073 White point defects are reduced by decreasing the amount of silica vapor condensing on electrodes used in the manufacturing process |
| 11/02/2000 | WO2000065132A1 Single-crystal pulling apparatus |
| 11/01/2000 | CN1272147A method and system for controlling growth of silicon crystal |
| 11/01/2000 | CN1272146A Heat shield for crystal puller |
| 11/01/2000 | CN1272145A Apparatus and method for manufacturing monocrystals, and monocrystal |
| 10/31/2000 | US6139811 Crucible including an improved die/susceptor assembly for use in edge-defined film-fed growth (efg) of hollow crystals |
| 10/31/2000 | US6139633 Single crystal pulling apparatus |
| 10/31/2000 | US6139632 Seed crystals, seed crystal holders, and a method for pulling a single crystal |
| 10/31/2000 | US6139630 Suspender for polycrystalline material rods |
| 10/31/2000 | US6139625 Method for producing a silicon single crystal wafer and a silicon single crystal wafer |
| 10/26/2000 | WO2000022197A9 Epitaxial silicon wafers substantially free of grown-in defects |
| 10/24/2000 | US6136094 Crucible for crystal pulling and method of manufacturing same |
| 10/24/2000 | US6136092 Depositing silicon dioxide powder on the inner surface of the substrate, heating to melt and form the transparent inner layer |
| 10/24/2000 | US6136090 Method for producing a silicon single crystal |
| 10/19/2000 | WO2000061840A1 Method for producing monocrystalline silicon |
| 10/19/2000 | DE19917288A1 Quarzglas-Tiegel und Herstellungsverfahren dafür Quartz glass crucible and the production method thereof |
| 10/18/2000 | EP1045046A2 Quartz glass crucible and process for its manufacture |
| 10/18/2000 | EP1044290A1 Crystal growing apparatus with melt-doping facility |
| 10/18/2000 | EP0825690A4 Laser material |
| 10/17/2000 | US6132507 Process and device for the production of a single crystal |
| 10/12/2000 | WO2000060145A1 Method and system of controlling taper growth in a semiconductor crystal growth process |
| 10/12/2000 | WO2000060144A1 Device and method for producing single-crystal ingot |