| Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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| 01/03/2002 | WO2002000967A1 Crucible supporting device, and method and device for filling material |
| 01/03/2002 | WO2000046430A3 Dendrite thickness control system for growing silicon ribbon |
| 01/03/2002 | US20020000541 Optical parametric oscillator which is provided with the crystal; chemical formula CsLiB6O10, and alkali or alkaline earth metal substituted cesium lithium borate crystals |
| 01/03/2002 | US20020000189 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer |
| 01/03/2002 | US20020000188 Cryogenic distillation |
| 01/03/2002 | US20020000187 Method of producing a silicon monocrystal |
| 01/03/2002 | US20020000186 Evaluation method for polycrystalline silicon |
| 01/03/2002 | US20020000185 Non-oxygen precipitating Czochralski silicon wafers |
| 01/02/2002 | EP1167587A1 Preparation of compounds based on phase equilibria of Cu-In-Se |
| 01/02/2002 | CN1329682A Method and apparatus for accurately pulling crystal |
| 01/01/2002 | US6334899 Continuous crystal plate growth apparatus |
| 01/01/2002 | US6334898 Crucible holder for pulling monocrystals |
| 01/01/2002 | US6334896 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same |
| 12/27/2001 | US20010055689 Extruded thermoplastic barrier coating carpet backing materials used to provide a durable, highly flexible carpet backing capable of being thermoformed |
| 12/27/2001 | US20010054376 Single crystal pulling apparatus and pulling method |
| 12/20/2001 | WO2001096238A1 SiGe CRYSTAL AND METHOD FOR PRODUCING THE SAME |
| 12/20/2001 | WO2001038625A3 Method for making a bowl in thermostructural composite material, resulting bowl and use of same as crucible support |
| 12/19/2001 | EP1163379A1 Semiconductor wafer comprising a thin epitaxial silicon layer and method for producing same |
| 12/13/2001 | WO2001094669A1 Polycrystalline silicon rod and method for processing the same |
| 12/12/2001 | EP1162291A1 Method and apparatus for detecting melt level |
| 12/12/2001 | CN1326518A Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 12/11/2001 | US6328795 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 12/06/2001 | WO2001092610A1 Method for growing single crystal and apparatus for producing single crystal, and silicon single crystal produced by the method |
| 12/06/2001 | WO2001092609A2 Multilayered quartz glass crucible and method of its production |
| 12/06/2001 | WO2001092170A1 Method for preparing quartz glass crucible |
| 12/06/2001 | WO2001092169A1 Method for producing quartz glass crucible |
| 12/06/2001 | US20010047749 Apparatus and method of growing single crystal of semiconductor |
| 12/06/2001 | US20010047748 Charging material and holding system for the charging material |
| 12/06/2001 | DE10025870A1 Einkristallstab und Verfahren zur Herstellung desselben Single crystal and method of manufacturing the same |
| 12/06/2001 | DE10025863A1 Chargiergut und Halterungssystem für das Chargiergut Charging material and holder system for the charging material |
| 12/05/2001 | EP1160359A1 Process and appparatus for producing an oxide single crystal |
| 12/05/2001 | EP1159470A1 Heat shield assembly for crystal puller |
| 12/05/2001 | EP1159227A1 Quartz glass crucible and method for the production thereof |
| 12/04/2001 | US6325852 Die for shaped crystal growth from a molten bath |
| 12/04/2001 | US6325851 Crystal manufacturing apparatus and method |
| 12/04/2001 | US6325848 Method of making a silicon substrate with controlled impurity concentration |
| 11/29/2001 | US20010045621 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal |
| 11/29/2001 | US20010045542 Growing in lattice direction inclined at angle of 50.8-90 degrees from (001) axis; niobium, gallium, silicon, alkaline earth metal oxides; for use as component of a resonator, filter |
| 11/29/2001 | US20010045184 Crystal puller for growing low defect density, self-interstitial dominated silicon |
| 11/29/2001 | DE10110697A1 Vorrichtung und Verfahren zum Züchten von Halbleitereinkristallen An apparatus and method for growing semiconductor single crystals |
| 11/28/2001 | EP1158076A1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
| 11/28/2001 | EP1158075A1 Single crystal ingot and its method of production |
| 11/28/2001 | EP1021598B1 Heat shield for crystal puller |
| 11/28/2001 | CN1324414A Method and system for measuring polycrystalline chunk size and distribution in the charge of a czochralski process |
| 11/22/2001 | WO2001088230A1 Silicon single-crystal wafer manufacturing method, silicon single-crystal wafer, and epitaxial wafer |
| 11/22/2001 | US20010043733 Device and method for the determination of diameters of crystals |
| 11/22/2001 | US20010042504 Method for simulating the shape of the solid-liquid interface between a single crystal and a molten liquid, and the distribution of point defects of the single crystal |
| 11/21/2001 | CN1323364A Method and system for controlling growth of a silicon crystal |
| 11/21/2001 | CN1323363A Electrode assembly for electrical resistance heater used in crystal growing apparatus |
| 11/21/2001 | CN1323362A Thermally annealed, low defect density single crystal silicon |
| 11/20/2001 | US6319313 Charging polysilicon to crucible; melting the polysilicon to form a mass of molten silicon in crucible; forming a layer of devitrified silica on inside surface of crucible in contact with molten mass, layer being nucleated by the barium |
| 11/15/2001 | WO2001086036A2 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 11/15/2001 | WO2001086033A1 Method and device for feeding arsenic dopant into a silicon crystal growing process |
| 11/15/2001 | WO2000042243A9 Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| 11/15/2001 | US20010039916 Epitaxial silicon wafers substantially free of grown-in defects |
| 11/14/2001 | EP1154048A1 Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof |
| 11/14/2001 | EP1153161A1 Tungsten doped crucible and method for preparing same |
| 11/14/2001 | EP1153000A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation |
| 11/14/2001 | EP1019567B1 Method and system for controlling growth of a silicon crystal |
| 11/14/2001 | CN1322260A Continuous oxidation process for crystal pulling apparatus |
| 11/13/2001 | US6315970 Strength |
| 11/13/2001 | US6315828 Continuous oxidation process for crystal pulling apparatus |
| 11/13/2001 | US6315827 Apparatus for producing single crystal |
| 11/08/2001 | WO2001083860A1 High quality silicon wafer and method for producing silicon single crystal |
| 11/08/2001 | WO2001083859A1 Method and apparatus for measuring melt level |
| 11/08/2001 | DE10106948A1 Process for simulating the shape of a solid-liquid boundary surface between a single crystal and a melt comprises using a computer to calculate the shape of a solid-liquid boundary surface in agreement with an isothermic line |
| 11/08/2001 | DE10106369A1 Verfahren zur Herstellung von versetzungsfreien Silicium-Einkristallen A process for producing dislocation-free silicon single crystals |
| 11/07/2001 | EP1152074A1 Silicon single crystal wafer and production method therefor |
| 11/07/2001 | EP1151154A1 Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| 11/07/2001 | CN1321336A Silicon on insulator structure from low-defect density single crystal silicon |
| 11/07/2001 | CN1320724A Single crystal and melt solid-liquid interface shape and single crystal point defect distribution simulation method |
| 11/07/2001 | CN1320723A Technique for growing Nd-doped gadolinium calcium borate crystal by crucible lowering-down method |
| 11/06/2001 | US6313398 Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same |
| 11/06/2001 | US6313013 Method and device for processing semiconductor material |
| 11/06/2001 | US6312517 Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 11/06/2001 | US6312516 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 11/01/2001 | WO2001081661A1 Silicon single-crystal wafer, method for producing silicon single crystal, and method for fabricating silicon single-crystal wafer |
| 11/01/2001 | WO2000057980A9 Efg crystal growth apparatus |
| 10/31/2001 | DE10019601A1 Production of polycrystalline rod involves depositing silicon on carrier rod, rotating polycrystalline silicon rod about a longitudinal axis and cutting rod through with parting tool |
| 10/25/2001 | WO2001079593A1 Silicon wafer, silicon epitaxial wafer, anneal wafer and method for producing them |
| 10/25/2001 | WO2001057293A9 Single crystal growing device and production method of single crystal using the device and single crystal |
| 10/25/2001 | US20010032583 Method of producing a polycrystalline silicon rod |
| 10/25/2001 | US20010032580 Barium doping of molten silicon for use in crystal growing process |
| 10/24/2001 | EP1148158A2 Process for controlling thermal history of czochralski-grown silicon |
| 10/24/2001 | CN1319253A Non-oxygen precipitating czochralski silicon wafers |
| 10/18/2001 | US20010030348 Silcon on insulator structrue having a low defect density handler wafer and process for the preparation thereof |
| 10/18/2001 | US20010029883 Method of fabricating a single crystal ingot and method of fabricating a silicon wafer |
| 10/17/2001 | EP1146150A2 Low defect density, ideal oxygen precipitating silicon |
| 10/17/2001 | CN1318113A Method and system for stabilizing dendritic web crystal growth |
| 10/16/2001 | US6303048 Langasite-type crystals and a method for manufacturing the same |
| 10/16/2001 | US6302957 Quartz crucible reproducing method |
| 10/16/2001 | US6302956 Can be used in acoustic electronic frequency-selective devices in surface acoustic waves and volumetric acoustic waves. |
| 10/11/2001 | US20010027743 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 10/10/2001 | EP1143046A1 Silicon single crystal and production method for silicon single crystal wafer |
| 10/10/2001 | EP1143045A1 Silicon single-crystal wafer for epitaxial wafer, epitaxial wafer, methods for producing them, and evaluating method |
| 10/10/2001 | EP1143041A1 Process for producing a planar body of an oxide single crystal |
| 10/10/2001 | EP1034323B1 Apparatus for use in crystal pulling |
| 10/10/2001 | CN1317058A Electrical resistance heater for crystal growing apparatus and its method of use |
| 10/09/2001 | US6299982 Silicon single crystal wafer and method for producing silicon single crystal wafer |
| 10/09/2001 | US6299684 Grip arranged on a pull shaft of a crystal pulling system |