Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
01/2004
01/15/2004US20040009111 A vacancy dominated single crystal silicon wafer substrate that comprises nitrogen-stabilized oxygen precipitation nuclei; ingots, wafer form contains an axially symmetric region in which vacancies are the predominant intrinsic point
01/15/2004US20040007708 Light emitting element and method of making same
01/15/2004DE10324674A1 Einkristall-Ziehvorrichtung und -verfahren und Supraleitender Magnet Single crystal pulling apparatus and method, and superconducting magnet
01/14/2004CN1468328A Heat shield assembly for crystal pulling apparatus
01/14/2004CN1134560C Single crystal pulling apparatus
01/14/2004CN1134559C Single crystal growth method
01/13/2004US6676753 Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions
01/08/2004WO2004003265A1 Silicon single crystal material and its production method
01/08/2004US20040004301 Injecting irregular silicon metal particles into a high-temperature plasma reactor to melt; solidification to form spheres with thin silicon monooxide coating removable with hydroxide
01/08/2004US20040003770 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon
01/06/2004US6673330 Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
01/06/2004US6673148 Method of using a magnetic field furnace to manufacture semiconductor substrates
01/06/2004US6673147 High resistivity silicon wafer having electrically inactive dopant and method of producing same
01/06/2004US6672107 Quartz glass crucible and process for the production thereof
01/02/2004EP1375705A1 Silicon semiconductor single crystal manufacturing apparatus and manufacturing method
01/02/2004EP1375702A2 Doped silica glass crucible for making a silicon ingot
01/02/2004EP1373603A1 Heat shield assembly for crystal puller
01/02/2004EP1372837A1 Stabilised zirconium oxide for an observation window
01/02/2004EP1372805A2 Efg crystal growth apparatus and method
12/2003
12/31/2003CN1464920A Method for preparing tungstate single crystal
12/30/2003US6670036 Silicon seed crystal and method for producing silicon single crystal
12/30/2003US6670025 Pyrolytic boron nitride crucible and method
12/30/2003US6669777 Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication
12/30/2003US6669776 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
12/30/2003US6669775 High resistivity silicon wafer produced by a controlled pull rate czochralski method
12/25/2003US20030235136 Optical single-bit recording and fluorescent readout utilizing aluminum oxide single crystals
12/25/2003US20030233974 Method for growing laser crystals
12/24/2003WO2003106742A1 Seed crystal holding jig and process for producing single crystal
12/24/2003WO2003106741A2 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
12/24/2003CN1463305A Silicon single crystal wafer having void denuded zone on surface and diameter of above 300mm and its production method
12/24/2003CA2489234A1 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
12/23/2003US6667522 Silicon wafers for CMOS and other integrated circuits
12/18/2003WO2003104533A1 SINGLE CRYSTAL OF MIXED CRYSTAL OXIDE CONTAINING Yb, LUMINESCENT MATERIAL CONTAINING THE SAME, gamma-RAY DETECTOR AND POSITORON EMISSION TOMOGRAPHY UNIT
12/17/2003EP1370498A1 Quartz glass component and method for the production thereof
12/17/2003EP1370495A1 Method for producing a quartz glass crucible
12/17/2003EP1133590B1 Epitaxial silicon wafers substantially free of grown-in defects
12/17/2003EP0825690B1 Solid-state laser material
12/17/2003CN1131342C Method for implementing monocrystal growth controlled by using paltie effect
12/16/2003US6663710 Method for continuously pulling up crystal
12/16/2003US6663709 Crystal puller and method for growing monocrystalline silicon ingots
12/10/2003EP1127962B1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer
12/10/2003CN1461360A Nitrogen-doped silicon substantially free of oxidation induced stacking faults
12/10/2003CN1130308C Si-Ge crystal
12/09/2003US6660082 Method and apparatus for doping a melt with a dopant
12/03/2003EP1367657A2 Light emitting element and method of making same
11/2003
11/27/2003US20030218151 Doped alumina; crystal structure; optical recording media
11/26/2003EP1365048A1 Method for fabricating silicon single crystal
11/26/2003EP1364912A2 Hydrogen-doped silica powder, its method of production and a quartz glass crucible made from the powder
11/25/2003US6652934 Silica glass crucible and method of fabricating thereof
11/25/2003US6652824 Method of growing large-diameter dislocation-free <110> crystalline ingots
11/25/2003US6652646 Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions
11/25/2003US6652645 Process for preparing a silicon melt
11/20/2003WO2003095718A1 Process for coating silicon shot with dopant for addition of dopant in crystal growth
11/20/2003WO2003095717A1 Production method and production device for single crystal
11/20/2003WO2003095716A1 Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal
11/19/2003EP1230447B1 Method of controlling growth of a semiconductor crystal
11/18/2003US6648967 Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor
11/13/2003WO2003093540A1 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystalline structure by means of floating-zone continuous crystallization
11/13/2003US20030210731 Process and device for producing a quartz glass crucible by ring-like arc, and its quartz glass crucible
11/13/2003US20030209188 Process for coating silicon shot with dopant for addition of dopant in crystal growth
11/13/2003US20030209186 Controlled neck growth process for single crystal silicon
11/11/2003US6645296 Crystal holding apparatus
11/06/2003WO2003091484A1 Method for producing silicon single crystal and silicon single crystal wafer
11/06/2003WO2003091483A1 Method for producing silicon single crystal and, silicon single crystal and silicon wafer
11/06/2003US20030205358 Electromagnetic induction casting apparatus
11/06/2003US20030205191 Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
11/05/2003EP1358368A1 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
11/05/2003CN1453399A Filtering and inertness of combustible dust in process waste gas
11/04/2003US6641888 Silicon single crystal, silicon wafer, and epitaxial wafer.
11/04/2003US6641663 Silica crucible with inner layer crystallizer and method
10/2003
10/30/2003WO2003089697A1 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
10/30/2003WO2003089693A1 Quartz glass crucible and method for the production thereof
10/30/2003US20030200915 Production method for InP single crystal and InP single crystal
10/30/2003US20030200913 Large size semiconductor crystal with low dislocation density
10/30/2003US20030200867 Sintering filter in pressure vessel; blasting oxygen
10/29/2003EP1356139A2 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
10/28/2003US6638357 Method for revealing agglomerated intrinsic point defects in semiconductor crystals
10/23/2003US20030196587 Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
10/22/2003EP1354080A2 Apparatus and process for the preparation of low-iron contamination single crystal silicon
10/22/2003EP1153000B1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
10/21/2003US6635587 Method for producing czochralski silicon free of agglomerated self-interstitial defects
10/21/2003US6635323 Raw material for production of GaAs crystals
10/16/2003WO2003084886A1 Spinel substrate and heteroepitaxial growth of iii-v materials thereon
10/15/2003EP1218571B1 Process for preparing single crystal silicon having uniform thermal history
10/15/2003CN1448685A Surface modified quartz glass crucible and its modification process
10/14/2003US6632411 Silicon wafer and method for producing silicon single crystal
10/14/2003US6632280 Apparatus for growing single crystal, method for producing single crystal utilizing the apparatus and single crystal
10/14/2003US6632278 Low defect density epitaxial wafer and a process for the preparation thereof
10/09/2003WO2003083188A1 Device for pulling monocrystals
10/09/2003US20030188678 Spinel substrate and heteroepitaxial growth of III-V materials thereon
10/08/2003EP1349971A2 Crystal puller and method for growing single crystal semiconductor material
10/08/2003CN2578343Y Seed crystal rods
10/08/2003CN2578342Y Seed crystal holder for monocrystal silicon growth by straight pull process
10/08/2003CN1123650C Tech for growing Nd-doped dogolinium calcium borate cyrstal by crucible lowering-down process
10/07/2003US6630697 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal
10/02/2003WO2003080903A1 LUMINOUS MATERIAL FOR SCINTILLATOR COMPRISING SINGLE CRYSTAL OF Yb MIXED CRYSTAL OXIDE
10/02/2003US20030183163 Crystal growing apparatus
10/02/2003US20030183162 Polycrystalline silicon rod and method of processing the same
10/02/2003US20030183161 Surface modified quartz glass crucible and its modification process
10/01/2003EP1348783A2 a method for regenerating a composite crucible
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