Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854) |
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05/19/2004 | CN1150354C Single crystal pulling apparatus |
05/13/2004 | WO2004040650A1 Soi wafer and method for manufacturing soi wafer |
05/13/2004 | WO2004040045A1 Method for producing silicon wafer |
05/13/2004 | US20040089225 Integrated circuits, semiconductor |
05/13/2004 | US20040089224 Process for producing low defect density silicon |
05/12/2004 | CN1149306C Method for making silicon single crystal |
05/11/2004 | US6733585 Apparatus for pulling single crystal by CZ method |
05/06/2004 | US20040083947 Process for producing a silicon single crystal which is doped with highly volatile foreign substances |
05/06/2004 | US20040083946 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
05/06/2004 | US20040083945 Silicon seed crystal and method for producing silicon single crystal |
05/06/2004 | EP1222324B1 Czochralski process for growing single crystal silicon by controlling the cooling rate |
05/05/2004 | CN1494608A EFG crystal growth apparatus and method |
05/04/2004 | US6730580 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing |
04/29/2004 | WO2004035879A1 Method of measuring point defect distribution of silicon single crystal ingot |
04/29/2004 | WO2004035877A2 Method and apparatus for crystal growth |
04/29/2004 | DE10110697B4 Vorrichtung und Verfahren zum Züchten von Halbleitereinkristallen An apparatus and method for growing semiconductor single crystals |
04/28/2004 | EP1413652A1 Evaluation process of reactivity of silicia glass with silicon melt and vibration at its surface, and silicia glass crucible not causing the surface vibration |
04/28/2004 | CN1492084A Large size strontium borophosphate nonlinear optical crystal and its growth method and use |
04/28/2004 | CN1492083A Process for preparing laser rod with undoped ends |
04/27/2004 | US6726769 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
04/27/2004 | US6726764 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
04/21/2004 | CN1490437A Silicon seed crystal for straight drawing monocrystal growth and its process |
04/21/2004 | CN1490436A Silicon seed crystal holder for monocrystal silicon by vertical pulling process |
04/21/2004 | CN1146678C Process for preparing silcion melt from polysilicon charge |
04/15/2004 | WO2004031456A2 Method for producing aluminum antimonide crystals for radiation detectors |
04/15/2004 | WO2003106741A3 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon |
04/15/2004 | US20040072007 Silica glass crucible |
04/15/2004 | US20040070012 Low defect density silicon |
04/15/2004 | US20040069214 Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and a low melting point dopant feeding method thereof |
04/15/2004 | US20040069210 Method for forming aluminum oxide material used in optical data storage |
04/14/2004 | EP1408015A2 Quartz glass crucible, its process of manufacture and use |
04/14/2004 | CN1489644A Susceptorless reactor for growing epitaxial layers by chemical vapor deposition |
04/14/2004 | CN1489643A Process for preparing single crystal silicon having improved gate oxide integrity |
04/13/2004 | US6720509 Vapor controlled czochralski (VCZ) single crystal growth apparatus |
04/10/2004 | WO2004034380A2 Bit-wise aluminum oxide optical data storage medium |
04/10/2004 | CA2497759A1 Bit-wise optical data storage utilizing aluminum oxide single crystal medium |
04/08/2004 | US20040065250 Epitaxial silicon wafer |
04/07/2004 | CN1487126A Crucible lowering growth technology of Teo2 monocrystal |
04/07/2004 | CN1486946A Method for reforming quartz glass crucible |
04/01/2004 | WO2004027124A1 Thermal shield member of silicon single crystal pulling system |
04/01/2004 | US20040061063 High resistivity aluminum antimonide radiation detector |
03/31/2004 | CN1486582A Energy Pathway Arrangement |
03/31/2004 | CN1486374A Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
03/31/2004 | CN1485469A Growth method of near stoichiometric ratio single crystal of lithium niobate |
03/30/2004 | US6712901 Coating a metal salt and a partial hydrolyzate of alkoxysilane oligomer on the surface of the crucible, and heating for a transparent layer |
03/25/2004 | WO2004025001A1 Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal |
03/25/2004 | WO2004024998A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal |
03/25/2004 | US20040055531 Heat shield assembly for a crystal puller |
03/25/2004 | DE10340753A1 Device for pulling a single crystal for a substrate for a semiconductor device comprises a chamber containing a crucible, a heater for heating a material in the crucible, and a radiation screen arranged in the chamber |
03/24/2004 | CN1484715A Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
03/23/2004 | US6709957 Method of producing epitaxial wafers |
03/23/2004 | US6709511 Process for suppressing oxygen precipitation in vacancy dominated silicon |
03/18/2004 | US20040053767 Electrophoretically redensified sio2 moulded body method for the production and use thereof |
03/18/2004 | US20040052716 Method for producing silicon |
03/18/2004 | US20040050099 Reforming process of quartz glass crucible |
03/17/2004 | CN1483004A Apparatus and process for the preparation of low-iron contamination single crystal silicon |
03/17/2004 | CN1482289A Combined copple for growing spherical heterotype crystal |
03/10/2004 | EP1200649B1 Method of manufacturing crystal of silicon using an electric potential |
03/10/2004 | CN1480567A Method and apppts. for controlling oxygen content of reblended antimony or arsenic in silica chip |
03/09/2004 | US6702892 Production device for high-quality silicon single crystals |
03/04/2004 | WO2004018742A1 Method of producing silicon monocrystal |
03/04/2004 | US20040040497 Silica crucible with inner layer crystallizer and method |
03/04/2004 | US20040040491 Silicon single crystal wafer for particle monitor |
03/04/2004 | DE10315706A1 Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses |
02/26/2004 | WO2004016835A1 Mould parts of silicon nitride and method for producing such mould parts |
02/26/2004 | US20040035960 Separating mixture of polycrystalline wafers using screens having disks, conveyors and drives; reuse as raw materials |
02/25/2004 | EP1391542A1 Reforming process of quartz glass crucible |
02/25/2004 | EP1391252A1 Method and apparatus for improving silicon processing efficiency |
02/25/2004 | CN1478156A Process for controlling thermal history of vacancy=dominated, sigle crystal silicon |
02/25/2004 | CN1478057A Silicon production process |
02/24/2004 | US6695912 Method for growing laser crystals |
02/24/2004 | US6695035 Electromagnetic induction casting apparatus |
02/19/2004 | US20040031437 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
02/18/2004 | CN1475607A Composite crucible used for growing high temperature oxide crystal |
02/18/2004 | CN1138878C Single crystal drawing method and apparatus for its implementation |
02/18/2004 | CN1138877C Single crystal drawing device |
02/18/2004 | CN1138876C Super conducting magnet apparatus |
02/12/2004 | WO2004013384A1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
02/12/2004 | US20040025783 Method for producing hydrogen-doped silica powder, hydrogen-doped silica powder obtained from that method for use in a quartz glass crucible |
02/12/2004 | US20040025782 Process for producing low defect density, ideal oxygen precipitating silicon |
02/12/2004 | US20040025781 Preparation of compounds based on phase equilibria of cu-in-se |
02/12/2004 | DE10334513A1 Einkristalle von Silicaten von Seltenerdelementen Single crystals of silicates of rare earth elements |
02/11/2004 | CN1474466A Laminous element and its producing method |
02/11/2004 | CN1473968A Control method for seed crystal orientation in crystal growth process and its special clamp |
02/10/2004 | US6689213 Single crystal pulling apparatus |
02/10/2004 | US6689209 Process for preparing low defect density silicon using high growth rates |
02/05/2004 | US20040021129 For use as scintillator |
02/04/2004 | CN1473214A Method for production of low defect density silicon |
02/04/2004 | CN1473213A Process for preparing low defect density silicon using high growth rates |
02/04/2004 | CN1473212A Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge |
02/04/2004 | CN1472370A Magnetic mono crystal with magnetic induced high strain and shape memory effects and preparing method thereof |
02/04/2004 | CN1137293C Molten salt growth method of barium borophosphate monocrystal |
02/03/2004 | US6685774 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition |
01/29/2004 | DE10218491B3 Verfahren zur Vermeidung der Selbstentzündung von brennbaren Stäuben in Prozessabgasen sowie Vorrichtung zur Durchführung des Verfahrens sowie Siliciumscheibe erhältlich aus diesem Verfahren Procedures to avoid the self-ignition of combustible dusts in process waste gases and apparatus for performing the method and silicon wafer obtained from this procedure |
01/28/2004 | CN1136338C Combined thermal expansion apparatus |
01/27/2004 | US6682597 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer |
01/22/2004 | WO2004007815A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method |
01/22/2004 | WO2004007814A1 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor |
01/22/2004 | WO2004007813A1 A method of producing silicon crystals with a cyclical twin structure |
01/15/2004 | WO2004005591A1 Process for producing a silicon melt |