Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
05/2004
05/19/2004CN1150354C Single crystal pulling apparatus
05/13/2004WO2004040650A1 Soi wafer and method for manufacturing soi wafer
05/13/2004WO2004040045A1 Method for producing silicon wafer
05/13/2004US20040089225 Integrated circuits, semiconductor
05/13/2004US20040089224 Process for producing low defect density silicon
05/12/2004CN1149306C Method for making silicon single crystal
05/11/2004US6733585 Apparatus for pulling single crystal by CZ method
05/06/2004US20040083947 Process for producing a silicon single crystal which is doped with highly volatile foreign substances
05/06/2004US20040083946 Method and apparatus for growing multiple crystalline ribbons from a single crucible
05/06/2004US20040083945 Silicon seed crystal and method for producing silicon single crystal
05/06/2004EP1222324B1 Czochralski process for growing single crystal silicon by controlling the cooling rate
05/05/2004CN1494608A EFG crystal growth apparatus and method
05/04/2004US6730580 Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing
04/2004
04/29/2004WO2004035879A1 Method of measuring point defect distribution of silicon single crystal ingot
04/29/2004WO2004035877A2 Method and apparatus for crystal growth
04/29/2004DE10110697B4 Vorrichtung und Verfahren zum Züchten von Halbleitereinkristallen An apparatus and method for growing semiconductor single crystals
04/28/2004EP1413652A1 Evaluation process of reactivity of silicia glass with silicon melt and vibration at its surface, and silicia glass crucible not causing the surface vibration
04/28/2004CN1492084A Large size strontium borophosphate nonlinear optical crystal and its growth method and use
04/28/2004CN1492083A Process for preparing laser rod with undoped ends
04/27/2004US6726769 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
04/27/2004US6726764 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
04/21/2004CN1490437A Silicon seed crystal for straight drawing monocrystal growth and its process
04/21/2004CN1490436A Silicon seed crystal holder for monocrystal silicon by vertical pulling process
04/21/2004CN1146678C Process for preparing silcion melt from polysilicon charge
04/15/2004WO2004031456A2 Method for producing aluminum antimonide crystals for radiation detectors
04/15/2004WO2003106741A3 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
04/15/2004US20040072007 Silica glass crucible
04/15/2004US20040070012 Low defect density silicon
04/15/2004US20040069214 Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and a low melting point dopant feeding method thereof
04/15/2004US20040069210 Method for forming aluminum oxide material used in optical data storage
04/14/2004EP1408015A2 Quartz glass crucible, its process of manufacture and use
04/14/2004CN1489644A Susceptorless reactor for growing epitaxial layers by chemical vapor deposition
04/14/2004CN1489643A Process for preparing single crystal silicon having improved gate oxide integrity
04/13/2004US6720509 Vapor controlled czochralski (VCZ) single crystal growth apparatus
04/10/2004WO2004034380A2 Bit-wise aluminum oxide optical data storage medium
04/10/2004CA2497759A1 Bit-wise optical data storage utilizing aluminum oxide single crystal medium
04/08/2004US20040065250 Epitaxial silicon wafer
04/07/2004CN1487126A Crucible lowering growth technology of Teo2 monocrystal
04/07/2004CN1486946A Method for reforming quartz glass crucible
04/01/2004WO2004027124A1 Thermal shield member of silicon single crystal pulling system
04/01/2004US20040061063 High resistivity aluminum antimonide radiation detector
03/2004
03/31/2004CN1486582A Energy Pathway Arrangement
03/31/2004CN1486374A Process for monitoring the gaseous environment of a crystal puller for semiconductor growth
03/31/2004CN1485469A Growth method of near stoichiometric ratio single crystal of lithium niobate
03/30/2004US6712901 Coating a metal salt and a partial hydrolyzate of alkoxysilane oligomer on the surface of the crucible, and heating for a transparent layer
03/25/2004WO2004025001A1 Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal
03/25/2004WO2004024998A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal
03/25/2004US20040055531 Heat shield assembly for a crystal puller
03/25/2004DE10340753A1 Device for pulling a single crystal for a substrate for a semiconductor device comprises a chamber containing a crucible, a heater for heating a material in the crucible, and a radiation screen arranged in the chamber
03/24/2004CN1484715A Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
03/23/2004US6709957 Method of producing epitaxial wafers
03/23/2004US6709511 Process for suppressing oxygen precipitation in vacancy dominated silicon
03/18/2004US20040053767 Electrophoretically redensified sio2 moulded body method for the production and use thereof
03/18/2004US20040052716 Method for producing silicon
03/18/2004US20040050099 Reforming process of quartz glass crucible
03/17/2004CN1483004A Apparatus and process for the preparation of low-iron contamination single crystal silicon
03/17/2004CN1482289A Combined copple for growing spherical heterotype crystal
03/10/2004EP1200649B1 Method of manufacturing crystal of silicon using an electric potential
03/10/2004CN1480567A Method and apppts. for controlling oxygen content of reblended antimony or arsenic in silica chip
03/09/2004US6702892 Production device for high-quality silicon single crystals
03/04/2004WO2004018742A1 Method of producing silicon monocrystal
03/04/2004US20040040497 Silica crucible with inner layer crystallizer and method
03/04/2004US20040040491 Silicon single crystal wafer for particle monitor
03/04/2004DE10315706A1 Process for growing single crystals comprises holding the crystal at a temperature close to the melting temperature whilst the crystal material drawn from the melt and solidified is partially screened from heat losses
02/2004
02/26/2004WO2004016835A1 Mould parts of silicon nitride and method for producing such mould parts
02/26/2004US20040035960 Separating mixture of polycrystalline wafers using screens having disks, conveyors and drives; reuse as raw materials
02/25/2004EP1391542A1 Reforming process of quartz glass crucible
02/25/2004EP1391252A1 Method and apparatus for improving silicon processing efficiency
02/25/2004CN1478156A Process for controlling thermal history of vacancy=dominated, sigle crystal silicon
02/25/2004CN1478057A Silicon production process
02/24/2004US6695912 Method for growing laser crystals
02/24/2004US6695035 Electromagnetic induction casting apparatus
02/19/2004US20040031437 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
02/18/2004CN1475607A Composite crucible used for growing high temperature oxide crystal
02/18/2004CN1138878C Single crystal drawing method and apparatus for its implementation
02/18/2004CN1138877C Single crystal drawing device
02/18/2004CN1138876C Super conducting magnet apparatus
02/12/2004WO2004013384A1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
02/12/2004US20040025783 Method for producing hydrogen-doped silica powder, hydrogen-doped silica powder obtained from that method for use in a quartz glass crucible
02/12/2004US20040025782 Process for producing low defect density, ideal oxygen precipitating silicon
02/12/2004US20040025781 Preparation of compounds based on phase equilibria of cu-in-se
02/12/2004DE10334513A1 Einkristalle von Silicaten von Seltenerdelementen Single crystals of silicates of rare earth elements
02/11/2004CN1474466A Laminous element and its producing method
02/11/2004CN1473968A Control method for seed crystal orientation in crystal growth process and its special clamp
02/10/2004US6689213 Single crystal pulling apparatus
02/10/2004US6689209 Process for preparing low defect density silicon using high growth rates
02/05/2004US20040021129 For use as scintillator
02/04/2004CN1473214A Method for production of low defect density silicon
02/04/2004CN1473213A Process for preparing low defect density silicon using high growth rates
02/04/2004CN1473212A Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge
02/04/2004CN1472370A Magnetic mono crystal with magnetic induced high strain and shape memory effects and preparing method thereof
02/04/2004CN1137293C Molten salt growth method of barium borophosphate monocrystal
02/03/2004US6685774 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
01/2004
01/29/2004DE10218491B3 Verfahren zur Vermeidung der Selbstentzündung von brennbaren Stäuben in Prozessabgasen sowie Vorrichtung zur Durchführung des Verfahrens sowie Siliciumscheibe erhältlich aus diesem Verfahren Procedures to avoid the self-ignition of combustible dusts in process waste gases and apparatus for performing the method and silicon wafer obtained from this procedure
01/28/2004CN1136338C Combined thermal expansion apparatus
01/27/2004US6682597 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer
01/22/2004WO2004007815A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
01/22/2004WO2004007814A1 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
01/22/2004WO2004007813A1 A method of producing silicon crystals with a cyclical twin structure
01/15/2004WO2004005591A1 Process for producing a silicon melt
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