Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method
Patents for C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
06/2005
06/23/2005WO2005056886A1 Quartz crucibles having reduced bubble content and method of making thereof
06/23/2005US20050132948 Method for the production of low defect density silicon
06/22/2005EP1544328A1 Terbium paramagnetic garnet single crystal and magneto-optical device
06/22/2005CN1207451C Large size strontium borophosphate nonlinear optical crystal and its growth method and use
06/22/2005CN1207448C Method of increasing oxygen content in vertical pulling silicon single crystal rod
06/21/2005US6908509 CZ raw material supply method
06/16/2005WO2005054549A1 Silicon single crystal manufacturing system, silicon single crystal manufacturing method, and silicon single crystal
06/16/2005US20050130394 Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects
06/16/2005US20050126473 Device for pulling monocrystals
06/16/2005DE10349339A1 Kristallzüchtungsanlage Crystal growing equipment
06/15/2005EP1541721A1 Method of producing silicon monocrystal
06/14/2005US6905771 Silicon wafer
06/14/2005US6905533 Filtering and inerting of combustible dusts in the process off-gas
06/09/2005WO2005053010A1 Annealed wafer and annealed wafer manufacturing method
06/09/2005US20050120945 Quartz crucibles having reduced bubble content and method of making thereof
06/09/2005US20050120944 Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
06/09/2005US20050120547 Resistor made from carbonaceous material
06/08/2005EP1538242A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal
06/08/2005CN1205361C Method and system for controlling growth of silicon crystal
06/07/2005US6902618 Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method
06/02/2005US20050118739 Production method for compound semiconductor single crystal
06/02/2005US20050118461 crucibles for use in solidification and pulling of silicon single crystals
06/02/2005US20050115493 Thermal shield
06/02/2005US20050115491 Ion exchange waveguides and methods fabrication
06/02/2005DE10158521B4 In Teilbereichen oder vollständig verglaster SiO2-Formkörper und Verfahren zu seiner Herstellung In partial regions or completely vitrified SiO2-shaped body and process for its preparation
06/01/2005EP1536044A1 Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
06/01/2005EP1534881A1 Mould parts of silicon nitride and method for producing such mould parts
06/01/2005CN1623014A CdTe single crystal and CdTe polycrystal, and method for preparation thereof
06/01/2005CN1621576A Growth method of neodymium-doped gadolinium gallium garnet laser crystal
06/01/2005CN1621575A Neodymium-doped strontium-yttrium borate laser crystal
06/01/2005CN1204068C Quartz glass crucible and method for production thereof
05/2005
05/31/2005US6899760 Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof
05/31/2005US6899759 Single crystal production method
05/31/2005US6899758 Method and apparatus for growing single crystal
05/26/2005WO2004097079A3 Source material feeder apparatus for industrial crystal growth systems
05/25/2005EP1532297A1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
05/25/2005EP1330562B1 Method for the production of low defect density silicon
05/24/2005US6896732 Source material feeder apparatus for industrial crystal growth systems
05/24/2005US6896728 Process for producing low defect density, ideal oxygen precipitating silicon
05/19/2005US20050103256 High resistivity silicon wafers
05/18/2005CN1202290C Method and system for controlling growth of silicon single crystal
05/17/2005US6893499 Silicon single crystal wafer and method for manufacturing the same
05/12/2005WO2005042812A1 Scintillation substances (variants)
05/12/2005WO2005042811A1 Process for producing single crystal
05/12/2005US20050098096 High resistivity aluminum antimonide radiation and alpha-particle detector
05/06/2005WO2005041278A2 Crystal growing unit
05/05/2005US20050092236 System for continuous growing of monocrystalline silicon
05/04/2005CN1200149C Silicon seel crystal for straight drawing monocrystal growth and its process
05/04/2005CN1200148C Silicon seed crystal holder for monocrystal silicon by vertical pulling process
05/04/2005CN1200147C Bottom heater for pulling monocrystal
05/03/2005US6887441 High resistivity aluminum antimonide radiation detector
05/03/2005US6886364 Method for producing quartz glass crucible
05/03/2005CA2216998C In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
04/2005
04/28/2005US20050087126 Non-contact orbit control system for Czochralski crystal growth
04/28/2005US20050087125 Crystal growing equipment
04/27/2005EP1222325B1 Method for producing czochralski silicon free of agglomerated self-interstitial defects
04/27/2005CN1610020A Magnetic material with bidirectional shape memory effect and single-crystal producing method thereof
04/27/2005CN1609286A Solar energy level silicon single crystal producing process
04/27/2005CN1198973C Apparatus and method for making single crystal
04/27/2005CN1198760C Method for removing templat agent from synthetic zeolite
04/21/2005WO2005035839A1 Semiconductor single crystal manufacturing apparatus
04/21/2005WO2005035838A1 Process for producing single crystal, single crystal and single crystal production apparatus
04/21/2005US20050081779 Heater for crystal formation, apparatus for forming crystal and method for forming crystal
04/20/2005CN1608147A Heat shield assembly for crystal puller
04/14/2005US20050078591 Bit-wise optical data storage utilizing aluminum oxide single crystal medium
04/14/2005US20050076826 Silicon seed crystal and method for manufacturing silicon single crystal
04/14/2005DE10339402A1 Device for continuously removing molten material from melting crucible used in production of silicon wafers comprises granulate feeding unit, and unit for uniformly distributing granulate in melt
04/13/2005CN1196817C Growth of high curie point lead niobate lead indate-lead titanate single crystal using crucible descending method
04/13/2005CN1196816C Gallium-lanthanum silicate crystal growth technology of crucible descending process
04/12/2005US6878451 Sequestering; integrated circuits; nitrogen, boron dopes; low temperature annealing
04/07/2005WO2005031048A1 Spinel articles and methods for forming same
04/07/2005WO2005031047A1 Spinel articles and methods for forming same
04/07/2005DE10194370T5 Verfahren zum Züchten eines Kristalls A method for growing a crystal of
04/06/2005EP0812239B1 High purity composite useful as furnace components
04/05/2005US6875269 System for increasing charge size for single crystal silicon production
04/05/2005US6874713 Separating mixture of polycrystalline wafers using screens having disks, conveyors and drives; reuse as raw materials
03/2005
03/31/2005US20050066888 Active dampening orbit stopper for Czochralski crystal growth
03/31/2005US20050066881 Continuous production method for crystalline silicon and production apparatus for the same
03/30/2005CN1600905A Heavily doped method and doping equipment for developing silicon single-crystal straight pulled
03/30/2005CN1195107C Silicon ingot growing device
03/30/2005CN1195106C Doping method used in vertical pulling silicon single crystal preparation and its installation
03/24/2005US20050064632 Soi wafer and method for manufacturing soi wafer
03/24/2005US20050064246 Single crystals; reducing stresses; melt processability
03/24/2005US20050062011 Single crystal of potassium tantalate and an alkali metal or the group (V) metal; cubic form of perovskite crystalline structure is essentially free of impurities and defects; microwave resonator containing the single crystal, useful in RF and EPR applications
03/24/2005US20050061232 Doped organic semiconductor materials and process for their preparation
03/24/2005US20050061230 Spinel articles and methods for forming same
03/24/2005US20050061229 Optical spinel articles and methods for forming same
03/24/2005DE10338406A1 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung Doped organic semiconductor materials as well as processes for their preparation
03/23/2005EP1516078A2 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
03/23/2005CN1598080A Process for preparing sub-crystal for producing high strength diret drawing silicon mono crystal
03/23/2005CN1598079A Apparatus for rotating and drawing of crystal with damping
03/23/2005CN1598078A Process for growing calcium borate mono crystal by melt drawing
03/23/2005CN1194382C Silicon-semiconductor lining and its producing method
03/22/2005US6869478 Method for producing silicon single crystal having no flaw
03/22/2005US6869477 Controlled neck growth process for single crystal silicon
03/17/2005US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals
03/17/2005DE102004040053A1 Production of a silicon single crystal comprises drawing a single crystal using the Czochralski method and a silicon seed crystal which has no empty site excess region on a contact surface between the crystal and a starting material
03/16/2005CN1594673A Preparation process for lithium niobate crystal with near stoichiometric ratio
03/15/2005US6866714 Large size semiconductor crystal with low dislocation density
03/15/2005US6866713 Seed crystals for pulling single crystal silicon
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