Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
07/2013
07/11/2013US20130175647 Magnetic memory with phonon glass electron crystal material
07/11/2013US20130175645 Magnetoresistive effect element and magnetic random access memory using the same
07/11/2013DE102013100156A1 Semiconductor package useful in e.g. current sensors and thermal sensors, comprises isolating container e.g. glass having a recess, semiconductor chip disposed in recess, and backplane disposed under membrane portion of isolating container
07/10/2013EP2612359A1 Magnetic device, and method for reading from and writing to said device
07/10/2013CN103199192A Manufacturing method of magnetic sensing device
07/10/2013CN103199191A Magnetic sensor with wide detection range
07/10/2013CN103194727A Method for preparing magneto-resistor film and improving planar Hall-effect
07/10/2013CN101142494B 磁传感器及其制造方法 Magnetic sensor and manufacturing method
07/09/2013US8481337 Manufacturing method of silicon spin transport device and silicon spin transport device
07/04/2013US20130171743 Magnetic device and method of manufacturing the same
07/04/2013US20130171742 Method of fabricating a semiconductor device
07/04/2013US20130171741 Method for fabricating variable resistance memory device
07/04/2013US20130168808 Mems power inductor with magnetic laminations formed in a crack resistant high aspect ratio structure
07/04/2013US20130168788 Tunneling magneto-resistor reference unit and magnetic field sensing circuit using the same
07/04/2013US20130168702 Method For Preparing a GaAS Substrate For A Ferromagnetic Semiconductor, Method for Manufacturing One Such Semiconductor, Resulting Substrate and Semiconductor, And Uses Of Said Semiconductor
07/03/2013EP2610913A1 Spin-based device
07/03/2013EP2609638A1 METHOD FOR PREPARING A GaAS SUBSTRATE FOR A FERROMAGNETIC SEMICONDUCTOR, METHOD FOR MANUFACTURING ONE SUCH SEMICONDUCTOR, RESULTING SUBSTRATE AND SEMICONDUCTOR, AND USES OF SAID SEMICONDUCTOR
07/03/2013CN103187522A Manufacturing method of semiconductor device
07/03/2013CN103187521A Organic magnetic-sensing diode
07/02/2013US8476723 Magnetic element having low saturation magnetization
06/2013
06/27/2013US20130161771 Reducing source loading effect in spin torque transfer magnetoresistive random access memory (stt-mram)
06/27/2013US20130161770 Magnetoresistive device and a method of forming the same
06/26/2013CN103180987A An apparatus for spectrum sensing and associated methods
06/26/2013CN103180953A Magnetic device, and method for reading from and writing to said device
06/26/2013CN103178206A Etching method for triaxial magnetic sensor
06/26/2013CN103178205A Method for providing magnetic junctions and magnetic storage comprising the magnetic junctions
06/25/2013US8470462 Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions
06/20/2013US20130157385 Method for fabricating semiconductor device
06/20/2013US20130157384 Method for fabricating semiconductor device
06/20/2013US20130157383 Method for fabricating semiconductor device
06/20/2013US20130157382 Profile method in magnetic write head fabrication
06/20/2013US20130155764 Magnetoresistance element and semiconductor memory device
06/20/2013US20130155759 Test Structures, Methods of Manufacturing Thereof, Test Methods, and MRAM Arrays
06/20/2013US20130154038 High Performance MTJ Element for Conventional MRAM and for STT-RAM and a Method for Making the Same
06/20/2013US20130154037 Method of making device
06/20/2013US20130154036 Method and system for providing magnetic junctions having improved characteristics
06/20/2013US20130153028 Thin-film transistor, method for fabricating thin-film transistor, and display device
06/19/2013EP2605246A1 Self-referenced magnetic random access memory element comprising a synthetic storage layer
06/19/2013CN103165171A Self-referenced magnetic random access memory element comprising a synthetic storage layer
06/19/2013CN102339734B Production method of cylindrical semiconductor device with cross section being circular ring
06/19/2013CN102084511B Triple-gate or multi-gate component based on the tunneling effect
06/18/2013US8466526 Hall sensor for eliminating offset voltage
06/18/2013US8464600 Device for shifting changes in the transmission ratio
06/13/2013US20130149797 Magnetic Random Access Memory (MRAM) Manufacturing Process for a Small Magnetic Tunnel Junction (MTJ) Design with a Low Programming Current Requirement
06/13/2013US20130148418 Magnetoresistive device and a writing method for a magnetoresistive device
06/13/2013US20130146997 Magnetic device and method of manufacturing the same
06/13/2013DE102012213109A1 MTJ-Bauelement, Verfahren zur Herstellung desselben, elektronisches Bauelement und Speichersystem MTJ device, method of manufacturing the same, electronic component and storage system
06/13/2013DE102012110442A1 Magnetische Vorrichtung und Verfahren zum Herstellen derselben A magnetic device and method for manufacturing the same
06/13/2013DE102012110370A1 Magnetische Vorrichtungen und Verfahren zum Herstellen derselben Magnetic devices and methods for manufacturing the same
06/12/2013EP2601679A2 Mram device and integration techniques compatible with logic integration
06/12/2013CN103151457A Magnetic device and method of manufacturing the same
06/12/2013CN103151456A Magnetic devices and methods of manufacturing the same
06/12/2013CN103151455A Memory element and memory apparatus
06/12/2013CN103151454A Memory element and memory apparatus
06/06/2013WO2013080438A1 Recording element and recording device
06/06/2013WO2013080437A1 Storage element, and storage device
06/06/2013WO2013080436A1 Storage element, and storage device
06/06/2013US20130141966 Magnetoresistance effect element and magnetic memory
06/06/2013US20130140661 Perovskite manganese oxide thin film and manufacturing method therefor
06/06/2013US20130140660 Magnetic memory device and magnetic memory
06/06/2013US20130140615 Spin torque transfer memory cell structures and methods
06/06/2013DE112011102674T5 Verfahren und System zum Vorsehen von magnetischen Tunnelkontaktelementen, welche eine biaxiale Anisotropie haben A method and system for providing magnetic tunnel junction elements having a biaxial anisotropy
06/05/2013EP2599138A1 Writeable magnetic element
06/05/2013CN103137859A Forming method and forming device of magnetic material layers
06/05/2013CN103137858A Forming method and forming device of magnetic material layers
06/05/2013CN103137857A Forming method and forming device of tunnel insulating material layer
06/05/2013CN103137856A Self-referenced MRAM cell with optimized reliability
06/05/2013CN103137855A Memory element and memory apparatus
06/05/2013CN103137854A Memory element and memory apparatus
06/05/2013CN103137853A Memory element and memory apparatus
06/05/2013CN103137852A Memory element and memory apparatus
06/05/2013CN103137851A Memory element and memory apparatus
06/05/2013CN103137850A Magnetic multi-layer film hall element and preparing method thereof
06/05/2013CN103137849A Magnetic tunnel junction and forming method thereof
06/05/2013CN102089819B Magnetic device manufacturing method
06/05/2013CN101901867B Magnetoresistive memory device, integrated circuit and method for forming a spin-torque structure
06/04/2013US8456898 Magnetic element having perpendicular anisotropy with enhanced efficiency
06/04/2013US8455968 Storage element and memory device
06/04/2013US8455967 Memory element and memory device
05/2013
05/30/2013US20130134534 Magnetoresistive Device
05/30/2013US20130134533 Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same
05/30/2013US20130134419 Vertical diodes for non-volatile memory device
05/29/2013EP2597693A1 Self-referenced MRAM cell with optimized reliability
05/29/2013EP2597692A1 Self-referenced MRAM cell with optimized reliability
05/29/2013DE102012003614B3 Temperaturmessgerät, Temperaturmessgerät-Set und Verfahren zur Konfiguration eines mit einem Thermoelement betreibbaren Temperaturmessgeräts Temperature gauge, temperature gauge kit and method for configuring an operable with a thermocouple temperature meter
05/29/2013CN103123954A Method for manufacturing magnetic tunnel junction device
05/29/2013CN103123953A Electronic device comprising hall effect region with three contacts
05/29/2013CN102201533B Manufacturing method for magnetic tunnel junction structure
05/23/2013US20130130407 Semiconductor device and method for manufacturing the same
05/23/2013US20130130406 Magnetic tunnel junction device and fabrication
05/23/2013US20130127454 Magnetic field sensor including an anisotropic magnetoresistive magnetic sensor and a hall magnetic sensor
05/23/2013US20130126997 Unidirectional spin torque transfer magnetic memory cell structure
05/23/2013DE102012221009A1 Elektronikbauelement, das ein hall-effekt-gebiet mit drei kontakten umfasst Electronic device that contacts a hall-effect-area with three covers
05/22/2013EP2593978A2 Magnetic storage element utilizing improved pinned layer stack
05/22/2013EP2593938A1 Method and system for providing magnetic tunneling junction elements having laminated free layers and memories using such magnetic elements
05/22/2013CN103113099A Piezoelectric material and magnetoelectric composite
05/22/2013CN102361062B Preparation method of p-Si-based hetero-structure with large magneto-resistance effect
05/22/2013CN102227013B Preparation method of self-supporting multiferroics composite film
05/22/2013CN102185100B Silicon-based geometrical giant magnetoresistance device and manufacturing method thereof
05/21/2013US8445980 Memory element and memory device
1 ... 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 ... 121